Abstract: An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type gallium nitride layer. The gallium nitride substrate includes a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid. The gallium nitride hexagonal prism extends from the gallium nitride buffer layer along an axis. The gallium nitride hexagonal pyramid extends from the gallium nitride hexagonal prism along the axis and gradually expands to form a hexagonal frustum. The N-type gallium nitride layer is located on the gallium nitride hexagonal pyramid. The quantum well unit includes an indium gallium nitride layer located on the N-type gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer. The P-type gallium nitride layer is located on the gallium nitride layer.

Abstract: The present invention is to provide a method for transmitting information between multiple electronic pages. The method is applicable to an information transmission system, which includes at least one terminal device, a web server, a toolbar server and an application server. The terminal device obtains a background page from the web server and a toolbar page from the toolbar server and embeds the toolbar page into the background page. When a user clicks on any of at least one application linking object on the toolbar page through the terminal device, the terminal device is able to obtain a status page from the toolbar server and then store page information on the background or toolbar page into the status page and connect to the application server for obtaining an application page corresponding to the application linking object clicked on, so as to enable the application page to access the page information.

Abstract: The present invention provides a probe card structure, an assembling method thereof and a replacing method thereof. The probe card structure comprises a circuit board and a probe head assembly. The circuit board includes a first side and a second side opposite the first side. The circuit board also has at least one first connecting part and a containing hole penetrating the first side and the second side of the circuit board. The probe assembly, which is partially disposed in the containing hole, further comprises a fixing part and a probe head. The fixing part includes at least one second connecting part corresponding to the at least one first connecting part. The fixing part is detachably connected with the circuit board through the connection of the second connecting part and the first connecting part. The probe head is integrally formed with or detachably connected with the fixing part.

Abstract: Disclosed herein are an adaptive illumination apparatus and an adaptive illumination method. The adaptive illumination apparatus is associated with a target scene and comprises a control module and an illumination module. The control module is configured to generate a command associated with an area included in the target scene. Specifically, the control module selects the area and determines a scope and a direction associated therewith based on a brightness distribution of the target scene, receives a distance parameter associated with a distance between the area and the illumination module, and indicates said scope, direction and distance parameter in the command. The illumination module, coupled with the control module, is capable of panning, tilting, and zooming. Based on the command, the illumination module performs panning, tilting, or zooming and illuminates the area.

Abstract: Some embodiments of the present disclosure relate to a transistor device formed in a semiconductor substrate containing dopant impurities of a first impurity type. The transistor device includes channel composed of a delta-doped layer comprising dopant impurities of the first impurity type, and configured to produce a peak dopant concentration within the channel. The channel further includes a layer of carbon-containing material overlying the delta-doped layer, and configured to prevent back diffusion of dopants from the delta-doped layer and semiconductor substrate. The channel also includes of a layer of substrate material overlying the layer of carbon-containing material, and configured to achieve steep retrograde dopant concentration profile a near a surface of the channel.

Abstract: A multimedia processing apparatus, method, and non-transitory tangible computer readable medium thereof are provided. The multimedia processing apparatus of the present invention includes an interface and a processing unit. The interface receives an audio stream continuously, wherein the audio stream is defined with a time line. The processing unit performs the following operations every a predetermined time interval: (a) deciding a first portion of the audio stream with reference to a time instant of the time line, (b) calculating an energy of the first portion of the audio stream, and (c) calculating a difference between the energy and a previous energy. The processing unit decides a plurality of second portions of the audio stream and decides a beat point for each of the second portions by selecting the time instant that corresponds to the maximum difference within the second portion.

Abstract: A method of tracking immune cells to detect immune response. The method including steps of identifying a patient having a disease associated with an organ; administering biocompatible magnetic nanoparticles into the blood stream of the patient; and obtaining a magnetic resonance image of the organ. The presence of hyperintense or hypointense spots in the magnetic resonance image indicates immune response in the patient.

Abstract: A method of treating a condition related to iron deficiency. The method includes steps of identifying a patient having a condition related to iron deficiency and administering an effective amount of biocompatible iron oxide nanoparticles to the patient. The biocompatible iron oxide nanoparticles each contains an iron oxide core that is covered by one or more biocompatible polymers, each of which has a polyethylene glycol group, a silane group, and a linker linking, via a covalent bond, the polyethylene glycol group and the silane group.

Abstract: A light-emitting diode (LED) chip is disclosed. The LED chip includes a substrate and a LED stack on the substrate. The LED stack includes a first-type semiconductor layer, an active layer covering a portion and exposing another portion of the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. A current spreading layer is formed on the second-type semiconductor layer. A first electrode is formed on the exposed portion of the first-type semiconductor layer, and a second electrode is formed on the current spreading layer. The current spreading layer includes a first portion having a first thickness and a second portion having a second thickness. A vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer. The first thickness is greater than the second thickness.

Abstract: An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type gallium nitride layer. The gallium nitride substrate includes a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid. The gallium nitride hexagonal prism extends from the gallium nitride buffer layer along an axis. The gallium nitride hexagonal pyramid extends from the gallium nitride hexagonal prism along the axis and gradually expands to form a hexagonal frustum. The N-type gallium nitride layer is located on the gallium nitride hexagonal pyramid. The quantum well unit includes an indium gallium nitride layer located on the N-type gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer. The P-type gallium nitride layer is located on the gallium nitride layer.

Abstract: Some embodiments of the present disclosure relate to a transistor device formed in a semiconductor substrate containing dopant impurities of a first impurity type. The transistor device includes channel composed of a delta-doped layer comprising dopant impurities of the first impurity type, and configured to produce a peak dopant concentration within the channel. The channel further includes a layer of carbon-containing material overlying the delta-doped layer, and configured to prevent back diffusion of dopants from the delta-doped layer and semiconductor substrate. The channel also includes of a layer of substrate material overlying the layer of carbon-containing material, and configured to achieve steep retrograde dopant concentration profile a near a surface of the channel.

Abstract: A process for fabricating a circuit substrate is provided. The process includes the following steps. A carrier is provided. A conductive layer and a dielectric layer are placed on the carrier, and the conductive layer is located between the carrier and the dielectric layer. The dielectric layer is patterned to form a patterned-dielectric layer having first openings partially exposing the conductive layer. Arc-shaped grooves are formed on the exposed part of the conductive layer. A first-patterned-photoresist layer having second openings respectively connecting the first openings is formed. Conductive structures are formed, wherein each of the conductive structures is integrally formed and includes a pad part, a connection part, and a protruding part; the second openings, the first openings and the arc-shaped grooves are respectively filled with the pad parts, the connection parts and the protruding parts. The first patterned photoresist layer, the carrier and the conductive layer are removed.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer.

Abstract: A multimedia processing apparatus, method, and non-transitory tangible computer readable medium thereof are provided. The multimedia processing apparatus of the present invention includes an interface and a processing unit. The interface receives an audio stream continuously, wherein the audio stream is defined with a time line. The processing unit performs the following operations every a predetermined time interval: (a) deciding a first portion of the audio stream with reference to a time instant of the time line, (b) calculating an energy of the first portion of the audio stream, and (c) calculating a difference between the energy and a previous energy. The processing unit decides a plurality of second portions of the audio stream and decides a beat point for each of the second portions by selecting the time instant that corresponds to the maximum difference within the second portion.

Abstract: Some embodiments of the present disclosure relate to a transistor device formed in a semiconductor substrate containing dopant impurities of a first impurity type. The transistor device includes channel composed of a delta-doped layer comprising dopant impurities of the first impurity type, and configured to produce a peak dopant concentration within the channel. The channel further includes a layer of carbon-containing material overlying the delta-doped layer, and configured to prevent back diffusion of dopants from the delta-doped layer and semiconductor substrate. The channel also includes of a layer of substrate material overlying the layer of carbon-containing material, and configured to achieve steep retrograde dopant concentration profile a near a surface of the channel.

Abstract: A flip-lock type electrical device is provided. The flip-lock type electrical device includes a lid part which includes a metal part and a non-metal part, wherein the metal part includes a hinge cap, and one or a plurality of antennas, and one or a plurality of non-metal support material are configured in the hinge cape, and the hinge cape includes an antenna window, and wherein the antenna is grounded to the metal part, a main part, which includes a keyboard part and a base part, and a hinge part, configured to connect the lid part with the main part.

Abstract: An illumination device includes a light source and a reflective cup. The light source is for emitting a first beam and a second beam. A light intensity of the first beam is greater than a light intensity of the second beam. The reflective cup has a plurality of reflecting curved surfaces and a through hole formed by the plurality of reflecting curved surfaces. Each reflecting curved surface has a first reflective section and a second reflective section. A slope of the first reflective section is different from a slope of the second reflective section. The first beam is reflected to an off-axis region by the first reflective section. The second beam is reflected to a paraxial region by the second reflective section, such that a light intensity in the off-axis region is greater than a light intensity in the paraxial region.

Abstract: The disclosure provides a light-enhancing component and a photographic device having the same. The light-enhancing component includes a light reflective unit and a light source. The light reflective unit includes a first reflecting surface and a second reflecting surface. The light source is disposed between the first reflecting surface and the second reflecting surface. An inclination of the first reflecting surface is different from an inclination of the second reflecting surface.

Abstract: The present invention is to provide a method applicable to a network system for automatically inserting an embedded toolbar into a web browser directly by way of a gateway device, wherein a toolbar request instruction written in a dynamic scripting language is inserted into a web page message by the gateway device while the web page message is transmitted from a web server to a terminal device (e.g., a personal computer, personal digital assistant, etc.) through the gateway device, so as to enable the web browser of the terminal device to request an embedded toolbar serve for providing an embedded toolbar message according to the toolbar request instruction and then show an embedded toolbar corresponding to the embedded toolbar message on a web page received from the web server according to the web page message. Thus, a user of the terminal device doesn't have to install the embedded toolbar additionally.

Abstract: A light-emitting diode (LED) chip is disclosed. The LED chip includes a substrate and a LED stack on the substrate. The LED stack includes a first-type semiconductor layer, an active layer covering a portion and exposing another portion of the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. A current spreading layer is formed on the second-type semiconductor layer. A first electrode is formed on the exposed portion of the first-type semiconductor layer, and a second electrode is formed on the current spreading layer. The current spreading layer includes a first portion having a first thickness and a second portion having a second thickness. A vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer. The first thickness is greater than the second thickness.