Patents by Inventor Wenjun Li

Wenjun Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11124255
    Abstract: Provided is a saddle system and a bicycle, wherein the saddle system comprises a follower device, and the follower device is arranged on the seat rod of the bicycle for mounting the saddle. The follower device comprises a left and right rotating assembly and a left and right turnover assembly which are interconnected, wherein the left and right rotating assembly is rotated leftward or rightward with respect to the left and right turnover assembly, so that the saddle rotates leftward or rightward with respect to the seat rod. The left and right turnover assembly is turned over leftward or rightward with respect to the left and right rotating assembly to make the saddle is turned over leftward or rightward with respect to the seat rod.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: September 21, 2021
    Inventor: Wenjun Li
  • Patent number: 11129082
    Abstract: A method of route construction of an unmanned aerial vehicle (UAV) network includes: obtaining transmission information of the UAV network; determining a relay set from the UAV network based on the transmission information; wherein, the relay set includes at least one UAV; determining environment state parameters according to the transmission information and the information of the relay set; inputting the environment state parameters into a Deep Q-Learning network (DQN) to obtain an accumulated reward corresponding to each UAV; and selecting a UAV with the largest accumulated reward as a target UAV. This disclosure also discloses a UAV and computer readable storage medium that can be used to construct routes for a UAV network.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: September 21, 2021
    Assignee: Beijing University of Posts and Telecommunications
    Inventors: Wenjun Xu, Chunlei Huang, Zhi Zhang, Shaosheng Li, Ping Zhang, Jiaru Lin
  • Patent number: 11117106
    Abstract: The aerator system incorporates a land-based or water-based floating solar activated water aeration system with integrated linear diaphragm air compressor and controller to provide improved oxygen addition into water. The system uses low voltage and an advanced controller with max power point tracking (MPPT) technique, which converts the solar panel photovoltaic low voltage DC to low voltage AC and allows power generated from each solar panel to be fully utilized.
    Type: Grant
    Filed: April 11, 2019
    Date of Patent: September 14, 2021
    Assignee: LW Engineering LLC
    Inventors: Wenjun Li, Yichao Hao, Han Zhang
  • Publication number: 20210273094
    Abstract: Integrated circuit (IC) structures including asymmetric, recessed source and drain regions and methods for forming are provided. In an example, the IC structure includes a substrate, a gate structure over the substrate, first and second spacers contacting respective, opposite sidewalls of the gate structure, and source and drain regions on opposite sides of the gate structure. In one configuration, the source region includes an upper source portion having a first lateral width, and a lower source portion having a second lateral width greater than the first lateral width, and the drain region includes an upper drain portion having a third lateral width, and a lower drain portion having a fourth lateral width that is substantially the same as the third lateral width.
    Type: Application
    Filed: March 2, 2020
    Publication date: September 2, 2021
    Inventors: Man Gu, Wenjun Li
  • Publication number: 20210273046
    Abstract: A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile includes multiple doped regions with peak doping levels where a first doped region adjacent to a first side of the field stop zone has a first peak doping level that is not higher than a last peak doping level of a last doped region adjacent to the base region. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.
    Type: Application
    Filed: May 4, 2021
    Publication date: September 2, 2021
    Inventors: Lei Zhang, Karthik Padmanabhan, Lingpeng Guan, Jian Wang, Lingbing Chen, Wim Aarts, Hongyong Xue, Wenjun Li, Madhur Bobde
  • Publication number: 20210265342
    Abstract: Integrated circuit (IC) structures including buried insulator layer and methods for forming are provided. In a non-limiting example, a IC structure includes: a substrate; a first fin over the substrate; a source region and a drain region in the first fin; a first gate structure and a second gate structure over the first fin, the first and the second gate structures positioned between the source region and the drain region; and a buried insulator layer including a portion disposed under the first fin.
    Type: Application
    Filed: February 20, 2020
    Publication date: August 26, 2021
    Inventors: Wenjun Li, Man Gu
  • Patent number: 11097954
    Abstract: A method for preparing battery grade and high purity grade lithium hydroxide and lithium carbonate from high-impurity lithium sources includes steps for preparation of a refined lithium salt solution, preparation of battery grade lithium hydroxide, preparation of high purity grade lithium hydroxide, preparation of high purity grade lithium carbonate and preparation of battery grade lithium carbonate. The system to carry out the preparation includes a refined lithium salt solution preparation subsystem, a battery grade lithium hydroxide preparation subsystem, a high purity grade lithium hydroxide preparation subsystem, a high purity grade lithium carbonate preparation subsystem and a battery grade lithium carbonate preparation subsystem arranged in turn according to production sequence. A combination of physical and chemical treatment methods are used to treat the high-impurity lithium sources having variations in lithium contents, impurity categories, and impurity contents.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: August 24, 2021
    Assignees: CHENGDU CHEMPHYS CHEMICAL INDUSTRY CO., LTD
    Inventors: Yihua Dai, Rongfu Cai, Wenjun Ban, Chunhui Yang, Xinglong Wang, Yunfeng Li, Yali Li, Chuanyong Zheng, Qiang Meng, Hongjun Jiang
  • Patent number: 11101137
    Abstract: A process is applied to develop a plurality of reverse conducting insulated gate bipolar transistors (RCIGBTs). The process comprises the steps of providing a wafer, applying a first grinding process, patterning a mask, applying an etching process, removing the mask, implanting N++ type dopant, applying a second grinding process forming a TAIKO ring, implanting P+ type dopant, annealing and depositing TiNiAg or TiNiVAg, removing the TAIKO ring, attaching a tape, and applying a singulation process. The mask can be a soft mask or a hard mask. The etching process can be a wet etching only; a wet etching followed by a dry etching; or a dry etching only.
    Type: Grant
    Filed: March 19, 2020
    Date of Patent: August 24, 2021
    Assignee: ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
    Inventors: Zhiqiang Niu, Long-Ching Wang, Yueh-Se Ho, Lingpeng Guan, Wenjun Li
  • Publication number: 20210249307
    Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over a semiconductor body. The first gate structure includes a first sidewall and a second sidewall opposite the first sidewall, and the second gate structure includes a sidewall adjacent to the first sidewall of the first gate structure. A first source/drain region includes a first epitaxial semiconductor layer positioned between the first sidewall of the first gate structure and the sidewall of the second gate structure. A second source/drain region includes a second epitaxial semiconductor layer positioned adjacent to the second sidewall of the first gate structure. The first sidewall of the first gate structure and the sidewall of the second gate structure are separated by a distance that is greater than a width of the first epitaxial semiconductor layer.
    Type: Application
    Filed: February 6, 2020
    Publication date: August 12, 2021
    Inventors: Man Gu, Wenjun Li
  • Publication number: 20210242339
    Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A gate structure extends over a semiconductor body, a first source/drain region includes an epitaxial semiconductor layer on a first portion of the semiconductor body, and a second source/drain region is positioned in a second portion of the semiconductor body. The gate structure includes a first sidewall and a second sidewall opposite the first sidewall, the first source/drain region is positioned adjacent to the first sidewall of the gate structure, and the second source/drain region is positioned adjacent to the second sidewall of the gate structure. The first source/drain region has a first width, and the second source/drain region has a second width that is greater than the first width.
    Type: Application
    Filed: January 30, 2020
    Publication date: August 5, 2021
    Inventors: Wenjun Li, Man Gu, Baofu Zhu
  • Publication number: 20210171225
    Abstract: The present invention discloses a bead wire wrapper device and a wrapper method.
    Type: Application
    Filed: May 31, 2018
    Publication date: June 10, 2021
    Inventor: Wenjun LI
  • Publication number: 20210169896
    Abstract: The present invention relates to novel cross-linked cytotoxic agents, pyrrolobenzodiazepine dimer (PBD) derivatives, and their conjugates to a cell-binding molecule, a method for preparation of the conjugates and the therapeutic use of the conjugates.
    Type: Application
    Filed: July 5, 2018
    Publication date: June 10, 2021
    Inventors: Robert Yongxin ZHAO, Xiaotao ZHUO, Qingliang YANG, Linyao ZHAO, Yuanyuan HUANG, Hangbo YE, Chengyu YANG, Jun LEI, Shun GAI, Huihui GUO, Junxiang JIA, Lu BAI, Hongsheng XIE, Xiaomai ZHOU, Zhixiang GUO, Wenjun LI, Mingjun CAO, Jun ZHENG, Zhicang YE, Yanlei YANG
  • Patent number: 11031465
    Abstract: A semiconductor device includes a semiconductor body having a base region incorporating a field stop zone where the base region and the field stop zone are both formed using an epitaxial process. Furthermore, the epitaxial layer field stop zone is formed with an enhanced doping profile to realize improved soft-switching performance for the semiconductor device. In some embodiments, the enhanced doping profile formed in the field stop zone includes varying, non-constant doping levels. In some embodiments, the enhanced doping profile includes one of an extended graded doping profile, a multiple stepped flat doping profile, or a multiple spike doping profile. The epitaxial layer field stop zone of the present invention enables complex field stop zone doping profiles to be used to obtain the desired soft-switching characteristics in the semiconductor device.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: June 8, 2021
    Assignee: Alpha and Omega Semiconductor (Cayman) Ltd.
    Inventors: Lei Zhang, Karthik Padmanabhan, Lingpeng Guan, Jian Wang, Lingbing Chen, Wim Aarts, Hongyong Xue, Wenjun Li, Madhur Bobde
  • Publication number: 20210092743
    Abstract: Wireless communications systems and methods related to allocating resource blocks and resource block groups in a system band in order to reduce overhead associated with resource allocation. To reduce overhead, the wireless communication device communicates a signal in a control channel that indicates a general area and a resource block in the general area that stores data. The wireless communication device then communicates multiple resource blocks that include the resource block and communicates the data in the resource block using the signal. To reduce overhead, the wireless communication device also communicates multiple mappings for each resource block group into a set of resource blocks and a signal in a control channel that selects one of the multiple mappings. The communication device then determines resource blocks that are included in the resource block group according to the mapping, and communicates data in these resource blocks.
    Type: Application
    Filed: December 2, 2020
    Publication date: March 25, 2021
    Inventors: Sony Akkarakaran, Tao Luo, Wenjun Li, Atul Maharshi, Sundar Subramanian
  • Publication number: 20210052747
    Abstract: The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)-or cis (Z)-butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders.
    Type: Application
    Filed: November 9, 2020
    Publication date: February 25, 2021
    Applicant: Hangzhou DAC Biotech Co., Ltd.
    Inventors: Robert Yongxin ZHAO, Qingliang YANG, Yuanyuan HUANG, Shun GAI, Linyao ZHAO, Hangbo YE, Huihui GUO, Qianqian TONG, Minjun CAO, Junxiang JIA, Chengyu YANG, Wenjun LI, Xiaomai ZHOU, Hongsheng XIE, Chen LIN, Zhixiang GUO, Zhicang YE
  • Publication number: 20210058128
    Abstract: A UE may be configured to communicate using one of analog beamforming or hybrid beamforming. The UE may receive a set of beamformed signals from a base station. The UE may determine a set of angular spread values associated with a set of clusters in a channel between the base station and the UE based on the set of beamformed signals received from the base station. The UE may transmit the set of angular spread values to the base station. The UE may receive, from the base station based on the set of angular spread values, a set of transmission ranks associated with at least one cluster of the set of clusters. The UE may communicate at least one data stream with the base station across the at least one cluster using the set of transmission ranks associated with the at least one cluster of the set of clusters.
    Type: Application
    Filed: August 18, 2020
    Publication date: February 25, 2021
    Inventors: Vasanthan RAGHAVAN, Juergen CEZANNE, Junyi LI, Dai LU, Joseph Patrick BURKE, Wenjun LI
  • Patent number: 10901259
    Abstract: The disclosure relates to a shading tape, a backlight unit and a display device. The shading tape includes: a tape body; a buffer layer located at a side of the tape body and provided with a through groove running through the buffer layer in a direction perpendicular to the tape body; a heat dissipating component located in the through groove; and a sealing layer located at a side of the buffer layer far away from the tape body and configured to close an opening of the through groove at the side of the buffer layer far away from the tape body.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: January 26, 2021
    Inventor: Wenjun Li
  • Publication number: 20210005605
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to stacked gate transistors and methods of manufacture. The structure includes a stacked gate structure having a plurality of transistors with at least one floating node and at least one node to either ground or a supply voltage, and a contact to either of the ground or supply voltage and the at least one floating node being devoid of any contact.
    Type: Application
    Filed: July 5, 2019
    Publication date: January 7, 2021
    Inventors: Wenjun LI, Brian J. GREENE, Tao CHU, Bingwu LIU
  • Patent number: D916166
    Type: Grant
    Filed: December 3, 2019
    Date of Patent: April 13, 2021
    Inventor: Wenjun Li
  • Patent number: D923975
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: July 6, 2021
    Inventor: Wenjun Li