Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A semiconductor substrate includes a first region, a second region, and a first source/drain region in the first region. A semiconductor fin is located over the second region of the semiconductor substrate. The semiconductor fin extends laterally along a longitudinal axis to connect to the first region of the semiconductor substrate. The structure includes a second source/drain region including an epitaxial semiconductor layer coupled to the first semiconductor fin, and a gate structure that extends over the semiconductor fin. The gate structure includes a first sidewall and a second sidewall opposite the first sidewall, the first source/drain region is positioned adjacent to the first sidewall of the gate structure, and the second source/drain region is positioned adjacent to the second sidewall of the gate structure.

Abstract: The system comprises an electrode treatment unit; a temperature control treatment device (20a) connected in series to the electrode treatment unit, the temperature control treatment device (20a) comprising a temperature control vacuum treatment device (201) or a temperature control inert treatment device (202); and a lift-off unit connected in series to the temperature control treatment device (20a). Or the system comprises an atmosphere box (20b), the interior of the atmosphere box (20b) being vacuum, or an inert atmosphere and/or a protective atmosphere; and the electrode treatment unit provided inside the atmosphere box (20b), the temperature control box (9) connected in series to the electrode treatment unit, and the lift-off unit connected in series to the temperature control box (9). The electrode treatment unit comprises a first metal source unwinding shaft (1); a metal electrode unwinding shaft (2) to be supplemented and a compression roller device.

Abstract: An integrated circuit (IC) structure includes a semiconductor fin having a first longitudinal extent and a second longitudinal extent. The semiconductor fin has an upper fin portion having a uniform lateral dimension in the first longitudinal extent and the second longitudinal extent, a first subfin portion under the upper fin portion in the first longitudinal extent having a first lateral dimension, and a second subfin portion under the upper fin portion in the second longitudinal extent having a second lateral dimension different than the first lateral dimension. The second subfin may be used in a drain extension region of a laterally-diffused metal-oxide semiconductor (LDMOS) device. The second subfin reduces subfin current and improves HCI reliability, regardless of the type of LDMOS device.

Abstract: A semiconductor device is provided, which includes a substrate, an active region, source and drain regions, first and second gate structures, and a contact structure. The active region is arranged over the substrate and the source and drain regions are arranged in the active region. The first and second gate structures abut upon the active region. The first gate structure is arranged between the source and drain regions and the second gate structure is arranged between the first gate structure and the drain region. The contact structure is arranged over the active region electrically coupling the first gate structure.

Abstract: A FinFET includes a semiconductor fin, and a source region and a drain region in the same semiconductor fin. The drain region has a first fin height above a trench isolation; and the source region has a second fin height above the trench isolation. The first fin height is less than the second fin height. The FinFET may be used, for example, in a scaled laterally diffused metal-oxide semiconductor (LDMOS) application, and exhibits reduced parasitic capacitance for improved radio frequency (RF) performance. A drain extension region may have the first fin height, and a channel region may have the second fin height. A method of making the FinFET is also disclosed.

Abstract: A conjugation of a cytotoxic drug to a cell-binding molecule with a bis-linker (dual-linker) as shown in Formula (I). Bis-linkage methods of making a conjugate of a cytotoxic drug/molecule to a cell-binding agent in a specific manner are also described, as well as application of the conjugates for the treatment of a cancer, or an autoimmune disease, or an infectious disease. wherein “” is an optional bond; X, Y, Z1, and Z2 are a functional group; m1 and n are a integer; L1 and L2 are a linker.

Abstract: A UE may be configured to communicate using one of analog beamforming or hybrid beamforming. The UE may receive a set of beamformed signals from a base station. The UE may determine a set of angular spread values associated with a set of clusters in a channel between the base station and the UE based on the set of beamformed signals received from the base station. The UE may transmit the set of angular spread values to the base station. The UE may receive, from the base station based on the set of angular spread values, a set of transmission ranks associated with at least one cluster of the set of clusters. The UE may communicate at least one data stream with the base station across the at least one cluster using the set of transmission ranks associated with the at least one cluster of the set of clusters.

Abstract: The present invention discloses a bead wire wrapper device and a wrapper method.

Abstract: A conjugation of a cytotoxic drug to a cell-binding molecule with a bis-linker (dual-linker) as shown in Formula (I). Bis-linkage methods of making a conjugate of a cytotoxic drug/molecule to a cell-binding agent in a specific manner are also described, as well as application of the conjugates for the treatment of a cancer, or an autoimmune disease, or an infectious disease. wherein “” is an optional bond; X, Y, Z1, and Z2 are a functional group; m1 and n are a integer; L1 and L2 are a linker.

Abstract: A backlight source module and a display device are provided. The backlight source module includes a back plate structure and a rubber member. The back plate structure includes a bottom plate, and a first side plate and a second side plate respectively connected with the bottom plate, and the first side plate and the second side plate oppose each other. A light-emitting portion, a light-guiding component and the rubber member are sequentially disposed on the bottom plate along a first direction pointing from the first side plate to the second side plate. The rubber member is only disposed at the second side plate.

Abstract: The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)- or cis (Z)-butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders.

Abstract: A device is disclosed that includes a source region positioned in a first doped well region in a semiconductor substrate and a drain region positioned in a second doped well region in the substrate, wherein there is a well gap between the first doped well region and the second doped well region. The device also includes a gate structure that includes a first gate insulation layer positioned above an upper surface of the substrate, wherein the first gate insulation layer extends from a drain-side sidewall of the gate structure to a location above the well gap, and a second gate insulation layer having a first portion positioned above the upper surface of the substrate and a second portion positioned above the first gate insulation layer.

Abstract: The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)- or cis (Z)-butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders.

Abstract: Methods, systems, and devices for wireless communication are disclosed. Flexible interleaving configurations may be employed to support various operations, including beamforming. Flexible interleaving may include dynamically or semi-statically determining a combination of bit-level, tone-level, tone-group level, or other interleaving technique for one or more transmissions. The interleaving configuration may be based on delay spread, a coherence bandwidth, a signal to noise ratio, a Doppler spread, or a combination thereof. An interleaving configuration may be a determination may be made by a base station or some other network entity and explicitly signaled to another device. Additionally or alternatively, the determination may be made based on one or more implicit rules, which may be based on a variety of factors (e.g., available bandwidth, modulation and coding scheme (MCS), code block (CB) size). Further, interleaving may be enabled (or disabled) under certain conditions.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to unitary Cascode cells with resistance and capacitance optimization, and methods of manufacture. The structure includes a common source FET (CS-FET) in a first portion of a single common semiconductor region, the CS-FET comprising a source region and a drain region, a common gate FET (CG-FET) in a second portion of the single common semiconductor region, the CG-FET comprising a source region and a drain region, and a doped connecting region of the single common semiconductor region, connecting the drain of the CS-FET and the source of the CG-FET.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to unitary Cascode cells with resistance and capacitance optimization, and methods of manufacture. The structure includes a common source FET (CS-FET) in a first portion of a single common semiconductor region, the CS-FET comprising a source region and a drain region, a common gate FET (CG-FET) in a second portion of the single common semiconductor region, the CG-FET comprising a source region and a drain region, and a doped connecting region of the single common semiconductor region, connecting the drain of the CS-FET and the source of the CG-FET.

Abstract: The present invention relates to linkers having a group of propiolyl, substituted acryl(acryloyl), or disubstituted propanoyl, and using such linkers for the conjugation of compounds, in particular, cytotoxic agents to a cell-binding molecule.

Abstract: The present invention relates to novel linkers containing a 2,3-disubstituted succinic group, or 2-monosubstituted, or 2,3-disubstituted fumaric or maleic (trans (E)- or cis (Z)-butenedioic), or acetylenedicarboxyl group for conjugation of a cytotoxic agent, and/or one or more different functional molecules per linker to a cell-binding molecule, through bridge linking pairs of thiols on the cell-binding molecule specifically. The invention also relates to methods of making such linkers, and of using such linkers in making homogeneous conjugates, as well as of application of the conjugates in treatment of cancers, infections and autoimmune disorders.

Abstract: Provided is a saddle system and a bicycle, wherein the saddle system comprises a follower device, and the follower device is arranged on the seat rod of the bicycle for mounting the saddle. The follower device comprises a left and right rotating assembly and a left and right turnover assembly which are interconnected, wherein the left and right rotating assembly is rotated leftward or rightward with respect to the left and right turnover assembly, so that the saddle rotates leftward or rightward with respect to the seat rod. The left and right turnover assembly is turned over leftward or rightward with respect to the left and right rotating assembly to make the saddle is turned over leftward or rightward with respect to the seat rod.

Abstract: The aerator system incorporates a land-based or water-based floating solar activated water aeration system with integrated linear diaphragm air compressor and controller to provide improved oxygen addition into water. The system uses low voltage and an advanced controller with max power point tracking (MPPT) technique, which converts the solar panel photovoltaic low voltage DC to low voltage AC and allows power generated from each solar panel to be fully utilized.