Abstract: In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.

Abstract: A refractive optical imaging system for imaging an object field arranged in an object surface of the imaging system into an image field arranged in an image surface of the imaging system on a demagnifying imaging scale has a multiplicity of optical elements which are configured and arranged such that a defined finite field curvature of the imaging system is set such that an object surface concavely curved relative to the imaging system is imaged into a flat image surface.

Abstract: A microlithographic projection exposure apparatus contains an illumination system for generating projection light and a projection lens with which a reticle that is capable of being arranged in an object plane of the projection lens can be imaged onto a light-sensitive layer that is capable of being arranged in an image plane of the projection lens. The projection lens is designed for immersion mode, in which a final lens element of the projection lens on the image side is immersed in an immersion liquid. A terminating element that is transparent in respect of the projection is fastened between the final lens element on the image side and the light-sensitive layer.

Abstract: An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.

Abstract: A catadioptric objective for a microlithography projection system has an in-line single-axis arrangement of lenses and reflectors. The catadioptric portion of the objective includes a catadioptric lens element with at least one reflective surface or surface portion reflecting light back into the lens, so that the catadioptric lens element interacts with light rays through reflection as well as refraction.

Abstract: A projection exposure lens has an object plane, optical elements for separating beams, a concave mirror, an image plane, a first lens system arranged between the object plane and the optical elements for separating beams, a second double pass lens system arranged between the optical elements for separating beams and the concave mirror, a third lens system arranged between the optical elements for separating beams and the image plane. The second lens system has a maximum of five lenses.

Abstract: A projection exposure lens has an object plane, optical elements for separating beams, a concave mirror, an image plane, a first lens system arranged between the object plane and the optical elements for separating beams, a second double pass lens system arranged between the optical elements for separating beams and the concave mirror, a third lens system arranged between the optical elements for separating beams and the image plane. The second lens system has a maximum of five lenses.

Abstract: Objective (1, 601), in particular a projection objective for a microlithography projection apparatus, with first birefringent lenses (L108, L109, L129, L130) and with second birefringent lenses (L101–L107, L110–L128). The first lenses (L108, L109, L129, L130) are distinguished from the second lenses (L101–L107, L110–L128) by the lens material used or by the material orientation. After passing through the first lenses (L108, L109, L129, L130) and the second lenses (L101–L107, L110–L128), an outer aperture ray (5, 7) and a principal ray (9) are subject to optical path differences for two mutually orthogonal states of polarization. The difference between these optical path differences is smaller than 25% of the working wavelength. In at least one first lens (L129, L130), the aperture angle of the outer aperture ray (5, 7) is at least 70% of the largest aperture angle occurring for said aperture ray in all of the first lenses (L108, L109, L129, L130) and second lenses (L101–L107, L110–L128).

Abstract: A projection exposure lens system has an object side catadioptric system, and intermediate image and a refractive lens system. The refractive lens system from its intermediate image side and in the direction of its image plane has a first lens group of positive refractive power, a second lens group of negative refractive power, a third lens group of positive refractive power, a fourth lens group of negative refractive power, and a fifth lens group of positive refractive power.

Abstract: A projection objective (5) for microlithography for projecting a pattern arranged in an object plane (8) of the projection objective (5) has in the light path between the object plane (8) and the image plane (11) at least one beam deflecting device (19) with at least one totally reflective surface (17) that is inclined to an incidence direction of the radiation incident on the totally reflective surface (17) in such a way that substantially all the radiation coming from the object plane (8) and striking the totally reflective surface (17) is totally reflected at the totally reflective surface (17). A high reflectivity in conjunction with high angle of incidence with respect to the surface normal to the totally reflective surface (17) can be achieved with the aid of the beam deflecting device (19).

Abstract: An optical projection lens system for microlithography includes in the direction of propagating radiation: a first lens group having positive refractive power, a second lens group having negative refractive power and a waist (constriction) with a minimum diameter of the propagating radiation, and a further lens arrangement with positive refractive power, which follows the second lens group. At least one lens of the projection lens system which is arranged in front of the waist includes an aspherical surface.

Abstract: A projection lens for imaging a pattern arranged in an object plane onto an image plane using electromagnetic radiation from the extreme-ultraviolet (EUV) spectral region has several imaging mirrors between its object plane and image plane that define an optical axis of the projection lens and have reflective coatings. At least one of those mirrors has a graded reflective coating that has a film-thickness gradient that is rotationally symmetric with respect to a coating axis, where that coating axis is acentrically arranged with respect to the optical axis of the projection lens. Providing at least one acentric, graded, reflective coating allows designing projection lenses that allow highly uniform field illumination, combined with high total transmittance.

Abstract: Refractive projection objective with a numerical aperture greater than 0.7, consisting of a first convexity, a second convexity, and a waist arranged between the two convexities. The first convexity has a maximum diameter denoted by D1, and the second convexity has a maximum diameter denoted by D2, and 0.8<D1/D2<1.1.

Abstract: A purely refractive projection objective suitable for immersion micro-lithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with a negative refracting power, a second lens group with a positive refracting power, a third lens group with a negative refracting power, a fourth lens group with a positive refracting power and a fifth lens group with a positive refracting power are provided. The system aperture is in the region of maximum beam diameter between the fourth and the fifth lens group. Embodiments of projection objectives according to the invention achieve a very high numerical aperture of NA>1 in conjunction with a large image field, and are distinguished by a good optical correction state and moderate overall size. Pattern widths substantially below 100 nm can be resolved when immersion fluids are used between the projection objective and substrate in the case of operating wavelengths below 200 nm.

Abstract: Objective (1, 601), in particular a projection objective for a microlithography projection apparatus, with first birefringent lenses (L108, L109, L129, L130) and with second birefringent lenses (L101-L107, L110-L128). The first lenses (L108, L109, L129, L130) are distinguished from the second lenses (L101-L107, L110-L128) by the lens material used or by the material orientation. After passing through the first lenses (L108, L109, L129, L130) and the second lenses (L101-L107, L110-L128), an outer aperture ray (5, 7) and a principal ray (9) are subject to optical path differences for two mutually orthogonal states of polarization. The difference between these optical path differences is smaller than 25% of the working wavelength. In at least one first lens (L129, L130), the aperture angle of the outer aperture ray (5, 7) is at least 70% of the largest aperture angle occurring for said aperture ray in all of the first lenses (L108, L109, L129, L130) and second lenses (L101-L107, L110-L128).

Abstract: There is provided a reflective X-ray microscope for examining an object in an object plane. The reflective X-ray microscope includes (a) a first subsystem, having a first mirror and a second mirror, disposed in a beam path from the object plane to the image plane, and (b) a second subsystem, having a third mirror, situated downstream of the first subsystem in the beam path. The object is illuminated with radiation having a wavelength <100 nm, and the reflective X-ray microscope projects the object with magnification into an image plane.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective comprises: a first objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part for imaging the first intermediate imaging into a second intermediate image; a third objective part for imaging the second intermediate imaging directly onto the image plane; wherein a first concave mirror having a first continuous mirror surface and at least one second concave mirror having a second continuous mirror surface are arranged upstream of the second intermediate image; pupil surfaces are formed between the object plane and the first intermediate image, between the first and the second intermediate image and between the second intermediate image and the image plane; and all concave mirrors are arranged optically remote from a pupil surface.

Abstract: A catadioptric projection objective for imaging a pattern arranged on the object plane of the projection objective, on the image plane of the projection objective, comprising: a first objective part for imaging an object field in a first real intermediate image; a second objective part for producing a second real intermediate image with the radiation coming from the first objective part; and a third objective part for imaging the second real intermediate image on the image plane; wherein at least one of the objective parts is a catadioptric objective part with a concave mirror, and at least one of the objective parts is a refractive objective part and a folding mirror is arranged within this refractive objective part in such a way that a field lens is arranged between the folding mirror and an intermediate image which is closest to the folding mirror.

Abstract: An objective is configured with a first partial objective and a second partial objective. The first partial objective, which projects a first field plane onto an intermediate image, has a first, convex mirror and a second, concave mirror. The second partial objective, which projects the intermediate image onto a second field plane, has a third and a fourth mirror, both concave. All of the four mirrors have central mirror apertures. The axial distance between the first and second mirrors is in a ratio between 0.95 and 1.05 relative to the distance between the second mirror and the intermediate image. The axial distance ZM3-IM between the third mirror and the second field plane conforms to the relationship 0.03 · Du M3 + 5.0 ? ? ? mm < Z M3 - IM < 0.25 · Du M3 tan ? ( arcsin ? ( NA ) ) . NA represents the numerical aperture NA in the second field plane, and DUM3 represents the diameter of the third mirror.

Abstract: An optical projection lens system for microlithography comprising in the direction of propagating radiation: a first lens group having positive refractive power, a second lens group having negative refractive power and comprising a waist (constriction) with a minimum diameter of the propagating radiation, and a further lens arrangement with positive refractive power, which follows the second lens group, wherein at least one lens of the projection lens system which is arranged in front of the waist comprises an aspherical surface.