Abstract: A projection lens for imaging a pattern arranged in an object plane onto an image plane using electromagnetic radiation from the extreme-ultraviolet (EUV) spectral region has several imaging mirrors between its object plane and image plane that define an optical axis of the projection lens and have reflective coatings. At least one of those mirrors has a graded reflective coating that has a film-thickness gradient that is rotationally symmetric with respect to a coating axis, where that coating axis is acentrically arranged with respect to the optical axis of the projection lens. Providing at least one acentric, graded, reflective coating allows designing projection lenses that allow highly uniform field illumination, combined with high total transmittance.

Abstract: A projection objective has at least five lens groups (G1 to G5) and has several lens surfaces. At least two aspheric lens surfaces are arranged so as to be mutually adjacent. These mutually adjacently arranged lens surfaces are characterized as a double asphere. This at least one double asphere (21) is mounted at a minimum distance from an image plane (0?) which is greater than the maximum lens diameter (D2) of the objective.

Abstract: An optical system, particularly an illumination system, of a microlithographic projection exposure apparatus contains at least one plane reflecting surface for folding the beam path. The at least one reflecting surface is arranged with respect to an optical axis of the optical system such that the intensity ratio between two mutually perpendicular polarization directions is at least substantially preserved for an axially parallel light ray deviated by the at least one reflecting surface. In accordance with a second aspect, the at least one reflecting surface is arranged such that a maximum effect on the polarization of the projection light is achieved, so as to be able to compensate for polarization dependencies which occur in other components of the illumination system.

Abstract: An optical system of a microlithographic exposure apparatus comprises at least one optical element (L1 to L16, 15, 16, 24) having a locally varying birefringence direction distribution that is caused by stress-induced birefringence and is at least substantially rotationally symmetrical. At least one birefringent correcting element (K1, K2; K?) is made of a crystal having a location independent birefringence direction distribution that is at least substantially rotationally symmetrical. The crystal has a crystal lattice orientation that is oriented such that its birefringence direction distribution is at least substantially perpendicular to the locally varying birefringence direction distribution of the at least one optical element (L1 to L16, 15, 16, 24).

Abstract: A projection objective for microlithography for imaging a pattern arranged in the object plane of the projection objective into the image plane of the projection objective has at least one polarization splitter device that is operated only once in transmission or reflection. By using this device, polarization-dependent differences in the intensity and response of the light passing through the objective, which lead to a worsening of the imaging quality of the projection objective, can largely be avoided.

Abstract: According to one exemplary embodiment, a projection lens having an object plane and an image plane is provided and includes the following lens groups listed objectwise to imagewise: (1) a first lens group having negative refractive power; and (2) at least three other lens groups having a positive refractive power and at least one other lens group having a negative refractive power. In one embodiment, the projections lens includes a second lens group having a positive refractive power; a third lens group having a negative refractive power; and fourth, fifth and sixth lens groups having overall positive refractive power. The projection lens having a numerical aperture of at least about 0.85 and is of a 1½ waist construction, with the ½ waist defined in the first lens group and a primary waist is defined in the third lens group.

Abstract: An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.

Abstract: A projection objective has at least five lens groups (G1 to G5) and has several lens surfaces. At least two aspheric lens surfaces are arranged so as to be mutually adjacent. These mutually adjacently arranged lens surfaces are characterized as a double asphere. This at least one double asphere (21) is mounted at a minimum distance from an image plane (0?) which is greater than the maximum lens diameter (D2) of the objective.

Abstract: A catadioptric projection objective is used to project a pattern arranged in an object plane of the projection objective into an image plane of the projection objective with the formation of at least one real intermediate image and has an image-side numerical aperture NA>0.7. The projection objective comprises an optical axis and at least one catadioptric objective part that comprises a concave mirror and a first folding mirror. There are a first beam section running from the object plane to the concave mirror and a second beam section running from the concave mirror to the image plane. The first folding mirror is arranged with reference to the concave mirror in such a way that one of the beam sections is folded at the first folding mirror and the other beam section passes the first folding mirror without vignetting, the first beam section and the second beam section crossing one another in a cross-over region.

Abstract: An objective is configured with a first partial objective and a second partial objective. The first partial objective, which projects a first field plane onto an intermediate image, has a first, convex mirror and a second, concave mirror. The second partial objective, which projects the intermediate image onto a second field plane, has a third and a fourth mirror, both concave. All of the four mirrors have central mirror apertures. The axial distance between the first and second mirrors is in a ratio between 0.95 and 1.05 relative to the distance between the second mirror and the intermediate image. The axial distance ZM3-IM between the third mirror and the second field plane conforms to the relationship 0.03 · Du M3 + 5.0 ? ? ? mm < Z M3 - IM < 0.25 · Du M3 tan ? ( arcsin ? ( NA ) ) . NA represents the numerical aperture NA in the second field plane, and DuM3 represents the diameter of the third mirror.

Abstract: A purely refractive projection objective suitable for immersion micro-lithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with a negative refracting power, a second lens group with a positive refracting power, a third lens group with a negative refracting power, a fourth lens group with a positive refracting power and a fifth lens group with a positive refracting power are provided. The system aperture is in the region of maximum beam diameter between the fourth and the fifth lens group. Embodiments of projection objectives according to the invention achieve a very high numerical aperture of NA>1 in conjunction with a large image field, and are distinguished by a good optical correction state and moderate overall size. Pattern widths substantially below 100 nm can be resolved when immersion fluids are used between the projection objective and substrate in the case of operating wavelengths below 200 nm.

Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.

Abstract: According to one exemplary embodiment, a projection lens having an object plane and an image plane is provided and includes the following lens groups listed objectwise to imagewise: (1) a first lens group having negative refractive power; and (2) at least three other lens groups having a positive refractive power and at least one other lens group having a negative refractive power. In one embodiment, the projections lens includes a second lens group having a positive refractive power; a third lens group having a negative refractive power; and fourth, fifth and sixth lens groups having overall positive refractive power. The projection lens having a numerical aperture of at least about 0.85 and is of a 1½ waist construction, with the ½ waist defined in the first lens group and a primary waist is defined in the third lens group.

Abstract: A microlithographic projection exposure apparatus contains an illumination system (12) for generating projection light (13) and a projection lens (20; 220; 320; 420; 520; 620; 720; 820; 920; 1020; 1120) with which a reticle (24) that is capable of being arranged in an object plane (22) of the projection lens can be imaged onto a light-sensitive layer (26) that is capable of being arranged in an image plane (28) of the projection lens. The projection lens is designed for immersion mode, in which a final lens element (L5; L205; L605; L705; L805; L905; L1005; L1105) of the projection lens on the image side is immersed in an immersion liquid (34; 334a; 434a; 534a). A terminating element (44; 244; 444; 544; 644; 744; 844; 944; 1044; 1144) that is transparent in respect of the projection light (13) is fastened between the final lens element on the image side and the light-sensitive layer.

Abstract: A projection exposure apparatus for microlithography using a wavelength?193 nm, includes (A) a primary light source, (B) an illumination system having (1) an image plane, (2) a plurality of raster elements for receiving light from the primary light source, and (3) a field mirror for receiving the light from the plurality of raster elements and for forming an arc-shaped field having a plurality of field points in the image plane, and (C) a projection objective. The illumination system has a principle ray associated with each of the plurality of field points thus defining a plurality of principle rays. The plurality of principle rays run divergently into the projection objective.

Abstract: A catadioptric projection lens for imaging a pattern arranged in an object plane onto an image plane, preferably while creating a real intermediate image, including a catadioptric first lens section having a concave mirror and a physical beamsplitter having a beamsplitting surface, as well as a second lens section that is preferably refractive and follows the beamsplitter, between its object plane and image plane. Positive refractive power is arranged in an optical near-field of the object plane, which is arranged at a working distance from the first optical surface of the projection lens. The beamsplitter lies in the vicinity of low marginal-ray heights, which allows configuring projection lenses that are fully corrected for longitudinal chromatic aberration, while employing small quantities of materials, particularly those materials needed for fabricating their beamsplitters.

Abstract: A projection objective has at least five lens groups (G1 to G5) and has several lens surfaces. At least two aspheric lens surfaces are arranged so as to be mutually adjacent. These mutually adjacently arranged lens surfaces are characterized as a double asphere. This at least one double asphere (21) is mounted at a minimum distance from an image plane (0′) which is greater than the maximum lens diameter (D2) of the objective.

Abstract: A projection exposure system is proposed which is positionable between a first object and a second object for imaging the first object in a region of the second object with light of a wavelength band having a width &dgr;&lgr; about a central working wavelength &lgr;, wherein a relative width &dgr;&lgr;/&lgr; of the wavelength band is larger than 0.002, in particular, larger than 0.005, for example, of the Hg-I-line. The projection exposure system is a so-called three-bulge system comprising three bulges having, as a whole, a positive refractive power and two waists having, as a whole, a negative refractive power. By applying suitable measures, in particular, by suitably selecting the material for the lenses forming the projection exposure system, the long-term stability of the system is increased.

Abstract: An optical projection lens system for microlithography comprising in the direction of propagating radiation: a first lens group having positive refractive power, a second lens group having negative refractive power and comprising a waist (constriction) with a minimum diameter of the propagating radiation, and a further lens arrangement with positive refractive power, which follows the second lens group, wherein at least one lens of the projection lens system which is arranged in front of the waist comprises an aspherical surface.

Abstract: An optical projection lens system for microlithography comprising in the direction of propagating radiation: a first lens group having positive refractive power, a second lens group having negative refractive power and comprising a waist (constriction) with a minimum diameter of the propagating radiation, and a further lens arrangement with positive refractive power, which follows the second lens group, wherein at least one lens of the projection lens system which is arranged in front of the waist comprises an aspherical surface.