Abstract: The invention relates to a projection exposure apparatus for microlithography at &lgr;<200 nm. The projection exposure apparatus for microlithography has a light source with a wavelength less than 200 nm and a bandwidth, which is less than 0.3 pm, preferably less than 0.25 pm and greater than 0.1 pm. The projection exposure apparatus includes an exclusively refractive projection objective which is made out of a single lens material. The projection objective provides for a maximum image height in the range of 12 mm to 25 mm, an image side numerical aperture in the range of 0.75 up to 0.95 and a monochromatic correction of the wavefront of rms<15‰ of the wavelength of the light source.

Abstract: A projection exposure lens system has an object side catadioptric system, and intermediate image and a refractive lens system. The refractive lens system from its intermediate image side and in the direction of its image plane has a first lens group of positive refractive power, a second lens group of negative refractive power, a third lens group of positive refractive power, a fourth lens group of negative refractive power, and a fifth lens group of positive refractive power.

Abstract: A catadioptric projection lens for projecting a pattern located in an object plane onto an image plane without an intermediate image includes the following components between the object plane and the image plane in the given order: a first lens part for creating a beam that is directed at a physical beam splitter, a physical beam splitter with a beam splitter surface, a mirror group with a concave mirror, and a second lens part with positive focal power to create an image of the pattern on the image plane. The mirror group preferably has no free-standing lens, and the focal power of the mirror group is largely determined by the magnification of the concave mirror. The focal power of the mirror group is large enough to convert the incident divergent beam into a convergent beam. The system aperture is located on the image side behind of the concave mirror, preferably at the exit of the beam splitter.

Abstract: An objective is configured with a first partial objective and a second partial objective. The first partial objective, which projects a first field plane onto an intermediate image, has a first, convex mirror and a second, concave mirror. The second partial objective, which projects the intermediate image onto a second field plane, has a third and a fourth mirror, both concave. All of the four mirrors have central mirror apertures. The axial distance between the first and second mirrors is in a ratio between 0.95 and 1.05 relative to the distance between the second mirror and the intermediate image. The axial distance ZM3-IM between the third mirror and the second field plane conforms to the relationship 1 0.03 · Du M3 + 5.0 ⁢   ⁢ mm < Z M3 - IM < 0.25 · Du M3 tan ⁡ ( arcsin ⁡ ( NA ) ) .

Abstract: A method of adjusting a projection objective permits the projection objective to be adjusted between an immersion configuration and a dry configuration with few interventions in the system, and therefore to be used optionally as an immersion objective or as a dry objective. The projection objective has a multiplicity of optical elements which are arranged along an optical axis of the projection objective, the optical elements comprising a first group of optical elements following the object plane and a last optical element following the first group, arranged next to the image plane and defining an exit surface of the projection objective which is arranged at a working distance from the image plane. The last optical element is substantially without refracting power and has no curvature or only slight curvature.

Abstract: An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.

Abstract: A catadioptric projection objective which images a pattern arranged in an object plane into an image plane, with the production of a real intermediate image, has between the object plane and the image plane a catadioptric first objective portion and a concave mirror and a ray deflecting device and behind the ray deflecting device a dioptric second objective portion. The ray deflecting device has a preferably fully reflecting first reflecting surface for the deflection of the radiation coming from the object plane to the concave mirror. Positive refractive power is arranged behind the first reflecting surface and between this and the concave mirror, in an optical neighborhood of the object plane in which the principal ray height of the outermost field point of the radiation coming from the object is greater than the marginal ray height.

Abstract: A projection exposure lens system has an object side catadioptric system, and intermediate image and a refractive lens system. The refractive lens system from its intermediate image side and in the direction of its image plane has a first lens group of positive refractive power, a second lens group of negative refractive power, a third lens group of positive refractive power, a fourth lens group of negative refractive power, and a fifth lens group of positive refractive power.

Abstract: A projection objective provides a light path for a light bundle from an object field in an object plane to an image field in an image plane. The projection objective comprises a first mirror (S1), a second mirror (S2), a third mirror (S3), a fourth mirror (S4), a fifth mirror (S5), a sixth mirror (S6), a seventh mirror (S7), and an eighth mirror (S8). The light path is provided via the eight mirrors, the light bundle includes light with a wavelength in the range of 10-30 nm, and the light path is free of shading.

Abstract: A photolithographic reduction projection catadioptric objective includes a first optical group having an even number of at least four mirrors and having a positive overall magnifying power, and a second substantially refractive optical group more image forward than the first optical group having a number of lenses. The second optical group has a negative overall magnifying power for providing image reduction. The first optical group provides compensative aberrative correction for the second optical group. The objective forms an image with a numerical aperture of at least substantially 0.65, and preferably greater than 0.70 or still more preferably greater than 0.75.

Abstract: A projection exposure system is proposed which is positionable between a first object and a second object for imaging the first object in a region of the second object with light of a wavelength band having a width &dgr;&lgr; about a central working wavelength &lgr;, wherein a relative width &dgr;&lgr;/&lgr; of the wavelength band is larger than 0.002, in particular, larger than 0.005, for example, of the Hg-I-line. The projection exposure system is a so-called three-bulge system comprising three bulges having, as a whole, a positive refractive power and two waists having, as a whole, a negative refractive power. By applying suitable measures, in particular, by suitably selecting the material for the lenses forming the projection exposure system, the long-term stability of the system is increased.

Abstract: There is provided a microlithographic projector lens for EUV-lithography with a wavelegth in a range of 10-30 nm, an incident aperture diaphragm and an emergent aperture diaphragm for the transformation of an object field in an object plane into an image field in an image plane. The invention has a microlithographic projector lens that includes a first, second, third, fourth, fifth, sixth, seventh and eighth mirror, and a beam path from the object plane to the image plane that is free from obscuration.

Abstract: A projection exposure lens has an object plane, optical elements for separating beams, a concave mirror, an image plane, a first lens system arranged between the object plane and the optical elements for separating beams, a second double pass lens system arranged between the optical elements for separating beams and the concave mirror, a third lens system arranged between the optical elements for separating beams and the image plane. The second lens system has a maximum of five lenses.

Abstract: A projection objective has at least five lens groups (G1 to G5) and has several lens surfaces. At least two aspheric lens surfaces are arranged so as to be mutually adjacent. These mutually adjacently arranged lens surfaces are characterized as a double asphere. This at least one double asphere (21) is mounted at a minimum distance from an image plane (0′) which is greater than the maximum lens diameter (D2) of the objective.

Abstract: A photolithographic reduction projection catadioptric objective includes a first optical group having an even number of at least four mirrors and having a positive overall magnifying power, and a second substantially refractive optical group more image forward than the first optical group having a number of lenses. The second optical group has a negative overall magnifying power for providing image reduction. The first optical group provides compensative aberrative correction for the second optical group. The objective forms an image with a numerical aperture of at least substantially 0.65, and preferably greater than 0.70 or still more preferably greater than 0.75.

Abstract: An optical projection lens system for microlithography comprising in the direction of propagating radiation: a first lens group having positive refractive power, a second lens group having negative refractive power and comprising a waist (constriction) with a minimum diameter of the propagating radiation, and a further lens arrangement with positive refractive power, which follows the second lens group, wherein at least one lens of the projection lens system which is arranged in front of the waist comprises an aspherical surface.

Abstract: A projection objective has at least five lens groups (G1 to G5) and has several lens surfaces. At least two aspheric lens surfaces are arranged so as to be mutually adjacent. These mutually adjacently arranged lens surfaces are characterized as a double asphere. This at least one double asphere (21) is mounted at a minimum distance from an image plane (0′) which is greater than the maximum lens diameter (D2) of the objective.

Abstract: A purely refractive projection objective suitable for immersion micro-lithography is designed as a single-waist system with five lens groups, in the case of which a first lens group with a negative refracting power, a second lens group with a positive refracting power, a third lens group with a negative refracting power, a fourth lens group with a positive refracting power and a fifth lens group with a positive refracting power are provided. The system aperture is in the region of maximum beam diameter between the fourth and the fifth lens group. Embodiments of projection objectives according to the invention achieve a very high numerical aperture of NA>1 in conjunction with a large image field, and are distinguished by a good optical correction state and moderate overall size. Pattern widths substantially below 100 nm can be resolved when immersion fluids are used between the projection objective and substrate in the case of operating wavelengths below 200 nm.

Abstract: An illumination system for wavelengths ≦193 run comprises (a) a first raster element upon which a light bundle emitted from a light source impinges, for producing a convergent light bundle having a focal point, and (b) a second raster element. The convergent light bundle impinges on the second raster element outside the focal point. There is also provided an illumination system for wavelengths ≦193 nm, comprising (a) a first plurality of raster elements upon which a light bundle emitted from a light source impinges, for producing a plurality of convergent light bundles, where a member of the first plurality of raster elements produces a member of the plurality of convergent light bundles having a focal point, and (b) a second plurality of raster elements. The member of the plurality of convergent light bundles impinges on a member of the second plurality of raster elements outside the focal point.

Abstract: An objective comprising axial symmetry, at least one curved mirror and at least one lens and two intermediate images. The objective includes two refractive partial objectives and one catadioptric partial objective. The objective includes a first partial objective, a first intermediate a image, a second partial objective, a second intermediate image, and a third partial objective. At least one of the partial objectives is purely refractive. One of the partial objectives is purely refractive and one is purely catoptric.