Abstract: The present invention relates to a wave control apparatus using change of elastic modulus of thermoresponsive material, comprising: a wave modulation member having thermoresponsive material whose elastic modulus changes according to temperature variation, a wave source propagating wave through the wave modulation member, and a heating unit forming a wave modulation region by heating the wave modulation member, wherein the wave propagating through the wave modulation member from the wave source is configured to change wave characteristics when the wave passes through the wave modulation region heated by the heating unit.

Abstract: A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over the blocking layer, and forming a conductive layer over the interface control layer to fill the horizontal recess.

Abstract: A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over the blocking layer, and forming a conductive layer over the interface control layer to fill the horizontal recess.

Abstract: This technology provides a method for fabricating an electronic device. A method for fabricating an electronic device including a variable resistance element, which includes a free layer having a variable magnetization direction; a pinned layer having a first non-variable magnetization direction, and including first ferromagnetic materials and a first spacer layer interposed between adjacent two first ferromagnetic materials among the first ferromagnetic materials; a tunnel barrier layer interposed between the free layer and the pinned layer; a magnetic correction layer having a second magnetization direction which is anti-parallel to the first magnetization direction; and a third spacer layer interposed between the magnetic correction layer and the pinned layer, and providing an anti-ferromagnetic exchange coupling between the magnetic correction layer and the pinned layer.

Abstract: The present invention relates to a wave control apparatus using change of elastic modulus of thermoresponsive material, comprising: a wave modulation member having thermoresponsive material whose elastic modulus changes according to temperature variation, a wave source propagating wave through the wave modulation member, and a heating unit forming a wave modulation region by heating the wave modulation member, wherein the wave propagating through the wave modulation member from the wave source is configured to change wave characteristics when the wave passes through the wave modulation region heated by the heating unit.

Abstract: A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over the blocking layer, and forming a conductive layer over the interface control layer to fill the horizontal recess.

Abstract: A method of fabricating a metal oxide film includes sequentially laminating a carbon film and a metal oxide film including nano-sized metal oxide nanoparticles on a porous fuel membrane to form a preliminary composite structure and reducing the metal oxide film to form a composite structure by combusting the porous fuel membrane while applying a voltage to the preliminary composite structure.

Abstract: A method of synthesizing multi-shell structure nanoparticles includes uniformly distributing core nanoparticles to a first porous fuel membrane, coating the core nanoparticles fixed to the first porous fuel membrane with a fuel, and combusting the fuel coated on the core nanoparticles and the first porous fuel membrane to coat a first carbon film on surfaces of the core nanoparticles.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: This disclosure provides techniques for managing antenna sharing on a multi-mode wireless device between coexisting cellular and WLAN modems operating on the same band. One of the modems can communicate a WLAN scanning parameter to another one of the modems, and the distribution of shared antennas between the cellular modem and the WLAN modem may be modified based at least in part on the communicated scanning parameter to accommodate a WLAN scan on channels in the shared band. The distribution of the shared antennas between the modems for the WLAN scan may additionally or alternatively be selected based at least in part on the source of a detected WLAN scanning trigger (e.g., whether the scan is triggered by an application of the wireless device or the WLAN modem of the wireless device).

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: Provided is a method for fabricating an electronic device including a variable resistance element which includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include: cooling the substrate; and forming the magnetic correction layer over the cooled substrate.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: Disclosed are an electronic device comprising a semiconductor memory. The semiconductor memory includes a variable resistance element including a free layer having a variable magnetization direction; a pinned layer having a fixed magnetization direction; and a tunnel barrier layer interposed between the free layer and the pinned layer, wherein the free layer includes: a first free layer adjacent to the tunnel barrier layer and having a perpendicular magnetic anisotropy at an interface with the tunnel barrier layer; and a second free layer spaced apart from the tunnel barrier layer by the first free layer and having a saturation magnetization lower than a saturation magnetization of the first free layer.

Abstract: A method of fabricating a metal oxide film includes sequentially laminating a carbon film and a metal oxide film including nano-sized metal oxide nanoparticles on a porous fuel membrane to form a preliminary composite structure and reducing the metal oxide film to form a composite structure by combusting the porous fuel membrane while applying a voltage to the preliminary composite structure.

Abstract: A method of synthesizing multi-shell structure nanoparticles includes uniformly distributing core nanoparticles to a first porous fuel membrane, coating the core nanoparticles fixed to the first porous fuel membrane with a fuel, and combusting the fuel coated on the core nanoparticles and the first porous fuel membrane to coat a first carbon film on surfaces of the core nanoparticles.

Abstract: This technology provides a method for fabricating an electronic device. A method for fabricating an electronic device including a variable resistance element, which includes a free layer having a variable magnetization direction; a pinned layer having a first non-variable magnetization direction, and including first ferromagnetic materials and a first spacer layer interposed between adjacent two first ferromagnetic materials among the first ferromagnetic materials; a tunnel barrier layer interposed between the free layer and the pinned layer; a magnetic correction layer having a second magnetization direction which is anti-parallel to the first magnetization direction; and a third spacer layer interposed between the magnetic correction layer and the pinned layer, and providing an anti-ferromagnetic exchange coupling between the magnetic correction layer and the pinned layer.

Abstract: Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

Abstract: Provided is a method for fabricating an electronic device including a variable resistance element which includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include: cooling the substrate; and forming the magnetic correction layer over the cooled substrate.

Abstract: An electronic device includes semiconductor memory, the semiconductor memory including an under layer; a first magnetic layer located over the under layer and having a variable magnetization direction; a tunnel barrier layer located over the first magnetic layer; and a second magnetic layer located over the tunnel barrier layer and having a pinned magnetization direction, wherein the under layer includes a first metal nitride layer having a NaCl crystal structure and a second metal nitride layer containing a light metal.