Patents by Inventor Xia Li

Xia Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10811068
    Abstract: Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applications is disclosed. In one aspect, energy barriers of MTJs in different MRAM arrays are varied. The energy barrier of an MTJ affects its write performance as the amount of switching current required to switch the magnetic orientation of a free layer of the MTJ is a function of its energy barrier. Thus, by varying the energy barriers of the MTJs in different MRAM arrays in a semiconductor die, different MRAM arrays may be used for different types of memory provided in the semiconductor die while still achieving distinct performance specifications. The energy barrier of an MTJ can be varied by varying the materials, heights, widths, and/or other characteristics of MTJ stacks.
    Type: Grant
    Filed: January 14, 2019
    Date of Patent: October 20, 2020
    Assignee: Qualcomm Incorporated
    Inventors: Xia Li, Wei-Chuan Chen, Wah Nam Hsu, Seung Hyuk Kang
  • Publication number: 20200328350
    Abstract: An RRAM device is disclosed, having reduced area without increased performance variation, formed by employing a bounded filament formation region in which an oxide layer is thinner and an implanted ion concentration is higher than in a peripheral region of the oxide layer surrounding the bounded filament formation region. Filament formation is controlled to occur in a bounded region having a reduced area by thinning the oxide layer in the bounded region to increase an electric field strength in the bounded region. Defects in the bounded region are subject to greater force from the electric field than defects in the peripheral region. By implanting additional mobile ions or other ion species in the bounded region by an accurately controlled process, a higher concentration of defects is introduced into the bounded region to promote filament formation. Memory elements based on the RRAM device are formed at higher density and lower cost.
    Type: Application
    Filed: April 12, 2019
    Publication date: October 15, 2020
    Inventors: Bin Yang, Xia Li, Guoqing Chen
  • Publication number: 20200328253
    Abstract: A metal-insulator-semiconductor (MIS) resistive random access memory (RRAM) (MIS RRAM) device and MIS RRAM bit cell circuit are disclosed. A RRAM bit cell includes a RRAM device that can store a memory state and an access transistor to control access to the RRAM device. The RRAM device stores data as an electrical resistance formed in an oxide layer by applying a voltage differential between the top and bottom electrodes through the access transistor to generate an electric field in the oxide layer. This structure is similar to a metal gate formed over a channel region of a transistor. Forming the bottom electrode of the MIS RRAM device in a semiconductor structure may allow the dimensions of the electrodes of the MIS RRAM device to be scaled down to the dimensions of a transistor gate, because the MIS RRAM device structure can be fabricated with the transistor in a compatible process.
    Type: Application
    Filed: April 12, 2019
    Publication date: October 15, 2020
    Inventors: Bin Yang, Xia Li, Guoqing Chen
  • Publication number: 20200328293
    Abstract: Aspects generally relate to a heterojunction bipolar transistor (HBT), and method of manufacturing the same. The HBT including an emitter a first, a first side of a base coupled to a second side of the emitter opposite the first side of the emitter. A collector coupled to the base on a second side of the base opposite the emitter, wherein an area of a junction between the base and the collector is less than or equal to an area of a junction between the base and the emitter. A dielectric coupled to the collector. A first conductive base contact coupled to the base and adjacent to the collector and extending over a base-collector junction, the conductive base contact operative as a field plate.
    Type: Application
    Filed: April 10, 2019
    Publication date: October 15, 2020
    Inventors: Gengming TAO, Bin YANG, Xia LI
  • Patent number: 10803797
    Abstract: A driving method for a display panel, a driving chip, and a display device are provided. The method includes: pre-storing Gamma curves corresponding to different display modes of the display panel; monitoring a display mode of the display panel when an image is displayed by the display panel, and acquiring a negative power voltage signal corresponding to the display mode; acquiring a Gamma curve corresponding to the display mode from the pre-stored Gamma curves based on the monitored display mode; outputting the negative power voltage signal to the display panel; and correcting the image displayed by the display panel according to the acquired Gamma curve. The above driving method is configured to drive the image displayed by the display panel.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: October 13, 2020
    Assignee: WUHAN TIANMA MICRO-ELECTRONICS CO., LTD.
    Inventors: Liyuan Liu, Zhiyong Xiong, Xia Li
  • Publication number: 20200318232
    Abstract: Disclosed is a post-processing method for improving anti-wear and friction-reducing properties of a CrN coating. According to the method, the CrN coating is subjected to a thermal cycling treatment in a temperature range of ?20° C. to 60° C. under a humidity environment of 60%-80% R.H. The post-processing method can substantially improve the anti-wear and friction-reducing properties of the CrN coating, so that friction pair parts deposited with the coating achieve a stable operation for a long time.
    Type: Application
    Filed: December 20, 2018
    Publication date: October 8, 2020
    Inventors: Yongxin WANG, Zechao LI, Jingwen ZHANG, Zhixiang ZENG, Jinlong LI, Xia LU, Liping WANG
  • Publication number: 20200321215
    Abstract: A method for forming a semiconductor structure including forming a plurality of mandrel lines on a first dielectric layer and forming one or more groups of discontinuous mandrel line pairs with a first mask. The method further includes disposing a second dielectric layer, and forming dielectric spacers on sidewalls of the mandrel lines and the discontinuous mandrel line pairs. The method further includes removing the mandrel lines and the discontinuous mandrel line pairs to form spacer masks, forming one or more groups of blocked regions using a second mask, and forming openings extended through the first dielectric layer with a conjunction of the spacer masks and the second mask. The method also includes removing the spacer masks and the second mask, disposing an objective material in the openings, and forming objective lines with top surfaces coplanar with the top surfaces of the first dielectric layer.
    Type: Application
    Filed: June 23, 2020
    Publication date: October 8, 2020
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Lu Ming FAN, Zi Qun HUA, Bi Feng LI, Qingchen CAO, Yaobin FENG, Zhiliang XIA, Zongliang HUO
  • Publication number: 20200312786
    Abstract: Certain aspects of the present disclosure provide apparatus for thermal matching of integrated circuits (ICs). One example apparatus generally includes a first substrate, a first IC disposed on the first substrate and having a second substrate, and a second IC disposed on the first substrate. The second IC may include a third substrate, a thermal conductivity adjustment region comprising different material than the third substrate, the thermal conductivity adjustment region being adjacent to a first side of the third substrate, and one or more electrical components formed in one or more layers of the second IC adjacent to a second side of the third substrate, wherein the first side and the second side are opposite sides of the third substrate, and wherein a thermal conductivity of the thermal conductivity adjustment region is closer to a thermal conductivity of the second substrate than a thermal conductivity of the third substrate.
    Type: Application
    Filed: March 25, 2019
    Publication date: October 1, 2020
    Inventors: Bin YANG, Kai LIU, Xia LI
  • Publication number: 20200301668
    Abstract: A multiply-accumulate (MAC) operation in a deep neural network (DNN) consists of multiplying each input signal to a node by a respective numerical weight data and summing the products. Using ternary values for the input signals and weight data reduces memory and processing resources significantly. By representing ternary values in two-bit binary form, MAC operations can be replaced with logic operations (e.g., XNOR, popcount) implemented in logic circuits integrated into individual memory array elements in which the numerical weight data are stored. In this regard, a ternary computation circuit (TCC) includes a memory circuit integrated with a logic circuit. A memory array including TCCs performs a plurality of parallel operations (e.g., column or row elements) and determines a popcount. A TCC array in which logic circuits in columns or rows employ a single read-enable signal can reduce routing complexity and congestion of a metal layer in a semiconductor device.
    Type: Application
    Filed: March 21, 2019
    Publication date: September 24, 2020
    Inventor: Xia Li
  • Patent number: 10780487
    Abstract: A bending and molding production line includes an unwinding mechanism, a feeding and straightening device, a cutting-off mechanism, a bending and molding device and a material loading mechanism, wherein the bending and molding device includes a base, the base is provided with two transverse sliding bases, the base is provided with a transverse driving device driving the transverse sliding bases, the base is provided with a central clamping device between the two transverse sliding bases, the transverse sliding bases are provided with a longitudinal sliding base in a sliding manner and are provided with a longitudinal driving device driving the longitudinal sliding base to slide, the longitudinal sliding base is provided with a bending and molding device, the transverse sliding base at the left side is provided with a left clamping device, and the transverse sliding base at the right side is provided with a right clamping device.
    Type: Grant
    Filed: February 22, 2016
    Date of Patent: September 22, 2020
    Assignees: JIANGSU UNIVERSITY OF SCIENCE AND TECHNOLOGY INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE OF ZHANGJIAGANG, JIANGSU UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Wenxian Tang, Jian Zhang, Hongcai Lin, Yang Zhang, Qinfeng Li, Zhigao Tao, Xia Li, Shuyan Wang
  • Publication number: 20200296353
    Abstract: A display module, a display device and a working method are provided. The display module includes a display panel; a grating structure, arranged on the light-emitting side of the display panel; a deformation unit, located between the display panel and the grating structure; a control circuit, configured to control the deformation unit to adjust a thickness of the deformation unit in a direction from the display panel to the grating structure to change a distance between the display panel and the grating structure.
    Type: Application
    Filed: March 22, 2019
    Publication date: September 17, 2020
    Applicants: FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Guiguang HU, Junxiang LU, Shaojun SUN, Xuefang YE, Tan LI, Chengjun LIU, Junyao YIN, Xiangdong LIN, Yanfei CHI, Xia CHEN
  • Publication number: 20200277703
    Abstract: A method of electrochemical reduction of carbon dioxide includes the use of multi-faceted Cu2O crystals as a catalyst to convert CO2 to value-added products. An electrochemical cell for the electrochemical reduction of carbon dioxide includes a cathode including the multi-faceted Cu2O crystals. The multi-faceted Cu2O crystals have at least two different types of facets with different Miller indices. The multi-faceted Cu2O crystals include steps and kinks present at the transitions between the different types of facets. These steps and kinks improve the Faradaic Efficiency of the conversion of carbon dioxide. The multi-faceted Cu2O crystals may be nanosized. The multi-faceted Cu2O crystals may include 18-facet, 20-facet, and/or 50-facet Cu2O crystals.
    Type: Application
    Filed: February 25, 2020
    Publication date: September 3, 2020
    Inventors: Gugang Chen, Yi Rao, Xia Li
  • Publication number: 20200269229
    Abstract: The present disclosure relates to a method and an apparatus for treating, sorting and recycling an oil-containing discharged catalyst. There is provided a method for treating, sorting and recycling an oil-containing discharged catalyst, wherein the method comprises the following steps: (A) cyclonic washing and on-line activation of a discharged catalyst; (B) cyclonic spinning solvent stripping of the catalyst; (C) gas stream acceleration sorting of a high activity catalyst; (D) cyclonic restriping and particle capture of the high activity catalyst; and (E) cooling of the gas and condensation removal of the solvent. There is further provided an apparatus for treating, sorting and recycling an oil-containing discharged catalyst.
    Type: Application
    Filed: December 8, 2017
    Publication date: August 27, 2020
    Inventors: Hualin Wang, Pengbo Fu, Zhaohui Huang, Aibin Huang, Cheng Huang, Jianhuai Sun, Ying Zhao, Liquan Li, Chonggang Chen, Qian Zeng, Jianping Li, Yilin Fang, Fei Wang, Xia Jiang
  • Publication number: 20200270280
    Abstract: The present disclosure provides an organic compound, an electron transport material, and an application thereof. The organic compound has a structure as shown in Formula I. Design of molecular structure and substituents enables it to undergo tridentate coordination or tetradentate coordination with metal, and more stably and firmly combination with metal, so that it has stronger stability and longer working life when used as an electron transport material, which effectively solves a problem of rising drift voltage. The organic compound has greater rigid distortion, which can suppress an increase of intermolecular attraction and prevent it from forming a planar structure to cause excessive intermolecular attraction. The organic compound is used as an electron transport material, and can be applied to an electron transport layer and/or an electron injection layer of an OLED device, which can effectively improve luminous efficiency and working life of the device, and reduce turn-on voltage.
    Type: Application
    Filed: May 13, 2020
    Publication date: August 27, 2020
    Inventors: Jinghua NIU, Mingzhi DAI, Wei GAO, Xia Li
  • Patent number: 10756206
    Abstract: A compound semiconductor field effect transistor may include a channel layer. The compound semiconductor transistor may also include a multi-layer epitaxial barrier layer on the channel layer. The channel layer may be on a doped buffer layer or on a first un-doped buffer layer. The compound semiconductor field effect transistor may further include a gate. The gate may be on a first tier of the multi-layer epitaxial barrier layer, and through a space between portions of a second tier of the multi-layer epitaxial barrier layer.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: August 25, 2020
    Assignee: QUALCOMM Incorporated
    Inventors: Bin Yang, Xia Li, Gengming Tao, Periannan Chidambaram
  • Patent number: 10757008
    Abstract: Embodiments of the present invention provide a Flow Specification-based communications method, device, and system. The method includes: obtaining, by a controller, a requirement indicating that a first resource on a forwarding device needs to be associated with a second resource on the forwarding device; and sending, by the controller, a Border Gateway Protocol Flow Specification BGP Flow Spec protocol packet according to the requirement, where the BGP Flow Spec protocol packet includes a network layer reachability information field and an extended community attribute field, the network layer reachability information field carries characteristic information of the first resource, the extended community attribute field carries a global identifier GID used to indicate the second resource, and the BGP Flow Spec protocol packet is used to instruct to associate the first resource with the second resource.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: August 25, 2020
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Zhenbin Li, Shunwan Zhuang, Xia Chen, Nan Wu, Qiandeng Liang
  • Publication number: 20200262765
    Abstract: Disclosed herein are superabsorbent hydrogels formed using okara particles and polymeric chains. The hydrogel contains crosslinks, which are provided by crosslinking groups between the polymeric chains or by a plurality of polymer chains being bonded to each okara particle (with each of these chains being bonded to at least one further okara particle too). The resulting superabsorbent hydrogels are useful in aiding plant growth, nutrition and hydration, and may be mixed with soil to form a composite material for such purposes.
    Type: Application
    Filed: August 27, 2018
    Publication date: August 20, 2020
    Inventors: Jun LI, Jingling ZHU, Xia SONG, Choon Nam ONG, Chiang Shiong LOH, Wee Kee TAN
  • Publication number: 20200263926
    Abstract: A chaotic stirring device combining plasma arc smelting and permanent magnet including a furnace body; the furnace body is provided therein with a water-cooled copper crucible; the center of an upper surface of the water-cooled copper crucible is a groove for placing raw metals, and the water-cooled copper crucible is internally a hollow cavity; a return pipe is disposed directly below the groove in the hollow cavity; an upper end of the return pipe is vertical upward, and is horizontally provided with a filter screen; a spherical magnet is placed between the filter screen and the groove; one side of the water-cooled copper crucible is provided with a first water inlet pipe and a first water outlet pipe; the first water inlet pipe is connected to the hollow cavity, and the first water outlet pipe is connected to the bottom of the return pipe.
    Type: Application
    Filed: January 15, 2020
    Publication date: August 20, 2020
    Inventors: Jianbo YU, Zhongming REN, Xia LI, Zhenqiang ZHANG, Jiang WANG, Yujia ZHANG
  • Patent number: 10745989
    Abstract: The present disclosure relates to the field of scientific drilling technologies, and provides a deep rock in-situ active thermal-insulation coring device and thermal-insulation coring method thereof. The coring device comprises an in-situ coring system and an in-situ truth-preserving moving system, the in-situ coring system comprises a driving module, a coring module and a thermal insulation module, and the in-situ truth-preserving moving system comprises a truth-preserving chamber storage module and a mechanical arm; the thermal insulation module comprises a coring truth-preserving chamber and a temperature regulation control system, the truth-preserving chamber storage module comprises a storage truth-preserving chamber and a temperature balance control system, the mechanical arm is mounted in the storage truth-preserving chamber, and the coring truth-preserving chamber and the storage truth-preserving chamber are mutually butted.
    Type: Grant
    Filed: December 9, 2019
    Date of Patent: August 18, 2020
    Assignees: SHENZHEN UNIVERSITY, SICHUAN UNIVERSITY
    Inventors: Heping Xie, Ling Chen, Mingzhong Gao, Cunbao Li, Guangdi Deng, Xia Hua
  • Patent number: 10749017
    Abstract: Power amplifiers in radio frequency circuits are typically implemented as heterojunction bipolar transistors. In applications such as in 5G systems, the circuits are expected to operate at very high speeds, e.g., up to 100 GHz. Also, a certain amount of output power should be maintained for stable operation. To achieve both high power and high speed, it is proposed to incorporate field plates in the heterojunction bipolar transistors to reduce electric field in the collector. This allows the breakdown voltage of the transistor to be high, which aids in power output. At the same time, the collector can be relatively thin, which aids in operation speed.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: August 18, 2020
    Assignee: QUALCOMM Incorporated
    Inventors: Gengming Tao, Bin Yang, Xia Li