Patents by Inventor Xia Li

Xia Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240078362
    Abstract: Machine assisted systems and methods for enhancing the resolution of an IC thermal profile from a system analysis are described. These systems and methods can use a neural network based predictor, that has been trained to determine a temperature rise across an entire IC. The training of the predictor can include generating a representation of two or more templates identifying different portions of an integrated circuit (IC), each template associated with location parameters to position the template in the IC; performing thermal simulations for each respective template of the IC, each thermal simulation determining an output based on a power pattern of tiles of the respective template, the output indicating a change in temperature of a center tile of the respective template relative to a base temperature of the integrated circuit; and training a neural network.
    Type: Application
    Filed: November 13, 2023
    Publication date: March 7, 2024
    Inventors: Norman CHANG, Hsiming PAN, Jimin WEN, Deqi ZHU, Wenbo XIA, Akhilesh KUMAR, Wen-Tze CHUANG, En-Cih YANG, Karthik SRINIVASAN, Ying-Shiun LI
  • Publication number: 20240067522
    Abstract: The present disclosure provides a resource utilization method of crude sodium sulfate. The method comprises the following step: reducing the crude sodium sulfate to form a sodium sulfide solution; making the sodium sulfide solution perform a first reaction with chlorine to obtain sulfur and a sodium chloride solution; and electrolyzing the sodium chloride solution to obtain a sodium hydroxide solution and chlorine, and supplying the generated chlorine to the sodium sulfide solution to perform the first reaction.
    Type: Application
    Filed: October 10, 2022
    Publication date: February 29, 2024
    Applicant: Hunan Fortune Environmental Technology Co., LTD.
    Inventors: Yongzhan Li, Jihong Huang, Xia Liu, Yijun Xu
  • Patent number: 11914931
    Abstract: Machine assisted systems and methods for enhancing the resolution of an IC thermal profile from a system analysis are described. The methods can include generating a representation of two or more templates identifying different portions of an integrated circuit (IC); performing a thermal simulation for each respective template of the IC based on a sequence of power patterns of tiles of the respective template; and training a neural network with a plurality of training data collected via thermal simulations performed for the templates of the IC. These systems and methods can use a machine learning predictor, that has been trained to determine a transient temperature rise across an entire IC, and then append the determined transient temperature rise to a system level thermal profile of the IC.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: February 27, 2024
    Assignee: ANSYS, INC.
    Inventors: Akhilesh Kumar, Norman Chang, Hsiming Pan, Jimin Wen, Deqi Zhu, Wenbo Xia, Wen-Tze Chuang, En-Cih Yang, Karthik Srinivasan, Ying-Shiun Li
  • Patent number: 11912729
    Abstract: Provided are a boron-silicon heterocyclic compound having a structure represented by formula 1, a display device and a display apparatus. In formula 1, L1 and L2 are each a single bond, C6-C30 arylene, C6-C30 fused arylene, C4-C30 heteroarylene, or C4-C30 fused heteroarylene; D1 and D2 are each a substituted or unsubstituted C6-C60 aryl, a substituted or unsubstituted C4-C60 heteroaryl, a substituted or unsubstituted C10-C60 fused aryl, a substituted or unsubstituted C8-C30 fused heteroaryl, or a substituted or unsubstituted diphenylamino. The compound has a strong inductive effect and can reduce the driving voltage of the device. The silacyclopentadiene having a silicon atom as spiro-atom can effectively improve the solubility of the material, which is beneficial to the cleaning of the vapor deposition mask. In addition, the compound has a higher triplet energy level to effectively transfer energy to the luminous body, and improves the efficiency of the device.
    Type: Grant
    Filed: August 26, 2020
    Date of Patent: February 27, 2024
    Assignees: WUHAN TIANMA MICRO-ELECTRONICS CO., LTD., WUHAN TIANMA MICROELECTRONICS CO., LTD. SHANGHAI BRANCH
    Inventors: Lei Zhang, Wei Gao, Jinghua Niu, Ying Liu, Dongyang Deng, Yan Lu, Hongyan Zhu, Xia Li
  • Publication number: 20240055429
    Abstract: Disclosed is a complementary field effect transistor (CFET) formed from stacked 2D-material transistors. The 2D-material transistors are formed from transition metal dichalcogenide (TMD), which are atomically thin semiconductors. The stacked TMD transistors allow for enhanced drive current and lower switching capacitance, both of which are desirable.
    Type: Application
    Filed: August 10, 2022
    Publication date: February 15, 2024
    Inventors: Xia LI, Bin YANG
  • Patent number: 11902817
    Abstract: A device may receive input data associated with a wireless network, and may extract data from the input data to generate extracted data. The device may create PRB images based on the extracted data, and may process the PRB images, with a first model, to associate labels with each of the PRB images. The device may process the labels and the PRB images, with a second model, to identify potential issues associated with the PRB images, and may process data identifying the potential issues associated with the PRB images, with a third model, to compress the data identifying the potential issues into an array. The device may process the array, with a fourth model, to determine probability scores associated with the potential issues, and may select a potential issue with a greatest probability score as a detected issue. The device may perform actions based on the detected issue.
    Type: Grant
    Filed: October 6, 2022
    Date of Patent: February 13, 2024
    Assignee: Verizon Patent and Licensing Inc.
    Inventors: Christian Winter, Brian A. Ward, Richard S. Delk, Xia Li
  • Publication number: 20240047455
    Abstract: A monolithic 3D complementary field-effect transistor (FET) (CFET) circuit includes a first CFET structure and a second CFET structure in a logic circuit within a device layer. A first interconnect layer disposed on the device layer provides first and second input contacts and an output contact of a logic circuit. Each CFET structure includes an upper FET having a first type (e.g., P-type or N-type) on a lower FET having a second type (e.g., N-type or P-type). The FETs in the monolithic 3D CFET circuit may be interconnected to form a two-input NOR circuit or a two-input NAND circuit. Vertical access interconnects (vias) may be formed within the device layer to interconnect the FETs externally and to each other. The FETs may be formed as bulk-type transistors or SOI transistors.
    Type: Application
    Filed: August 8, 2022
    Publication date: February 8, 2024
    Inventors: Xia Li, Bin Yang
  • Publication number: 20240030793
    Abstract: The present application provides a rotor assembly and a self-starting permanent magnet synchronous reluctance motor. The rotor assembly includes a rotor core, wherein on a cross section of the rotor core, the rotor core is provided with slit slots, q-axis squirrel cage slots and permanent magnets, the q-axis squirrel cage slots are disposed at two ends of the slit slots, the permanent magnets are disposed in the slit slots, the permanent magnet located at the innermost layer in a d-axis direction is at least asymmetrically disposed relative to a d-axis, and an offset direction of the permanent magnet located at the innermost layer relative to the d axis is consistent with a rotation direction of the rotor assembly.
    Type: Application
    Filed: October 18, 2021
    Publication date: January 25, 2024
    Inventors: Yusheng Hu, Bin Chen, Yong Xiao, Jinfei Shi, Xia Li, Zhidong Zhang
  • Patent number: 11881862
    Abstract: A system includes a first park circuit having a signal input, an output, and a control input. The system also includes a first signal path having an input and an output, wherein the input of the first signal path is coupled to the output of the first park circuit. The system also includes a second park circuit having a signal input, an output, and a control input, wherein the signal input of the second park circuit is coupled to the output of the first signal path. The system further includes a second signal path having an input and an output, wherein the input of the second signal path is coupled to the output of the second park circuit.
    Type: Grant
    Filed: August 17, 2021
    Date of Patent: January 23, 2024
    Assignee: QUALCOMM INCORPORATED
    Inventors: Udayakiran Kumar Yallamaraju, Xia Li, Pankaj Deshmukh, Vajram Ghantasala, Bin Yang, Vishal Mishra, Bharatheesha Sudarshan Jagirdar, Arun Sundaresan Iyer, Amod Phadke, Vanamali Bhat
  • Publication number: 20240021586
    Abstract: A stacked gate-all-around (GAA) complementary field-effect transistor (CFET) includes a first GAA FET of a first type and a second GAA FET of a second type. Each of the first GAA FET and the second GAA ITT includes at least one three-dimensional (3D) semiconductor slab with a channel region and a first surface. A first gate structure surrounds the channel region in the first GAA FET, and a second gate structure surrounds the channel region in the second GAA FET. The first gate structure is stacked opposite the second gate structure in a direction orthogonal to the first surface. In some examples, a first crystal structure of the 3D semiconductor slab in the first GAA FET has a first orientation, and a second crystal structure of the 3D semiconductor slab in the second GAA FET has a different orientation for improved carrier mobility.
    Type: Application
    Filed: July 13, 2022
    Publication date: January 18, 2024
    Inventors: Xia Li, Bin Yang
  • Patent number: 11873566
    Abstract: A method of electrochemical reduction of CO2 includes the use of a catalyst of Cu/Cu2O particles including Cu/Cu2O interfaces. The catalyst may be included in an electrochemical cell for the conversion of CO2 to value-added products. The electrochemical cell may include an anode, a cathode including the Cu/Cu2O particles including Cu/Cu2O interfaces, and an aqueous medium containing CO2 or CO3?2. The CO2 or CO3?2 is reduced by contacting the Cu/Cu2O particles with the aqueous medium while supplying electricity to the cell. The conversion of CO2 by the electrochemical reduction thereof has higher Faradaic Efficiency due to the Cu/Cu2O interfaces in the Cu/Cu2O particles.
    Type: Grant
    Filed: February 26, 2020
    Date of Patent: January 16, 2024
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Gugang Chen, Yi Rao, Xia Li
  • Publication number: 20240009107
    Abstract: Disclosed are a hyaluronic acid composition having permeation-promoting effects, a preparation method thereof and the use thereof. Provided is a hyaluronic acid composition, comprising: hyaluronic acid or a salt thereof, an acetylated hyaluronic acid or a salt thereof, and a hydrolyzed hyaluronic acid or a salt thereof. The hyaluronic acid composition of the present application has a small addition amount, can effectively facilitate the absorption of other active ingredients in a formula to achieve synergistic effects, has a small particle size, is uniform, has a fast dissolution rate, has an excellent absorption speed in a product, and is superior to hyaluronic acid treated by means of simple mixing in improving skin hydration. Compared with traditional penetration promoters, the hyaluronic acid composition of the present application causes no damage to the skin and is safe.
    Type: Application
    Filed: November 5, 2021
    Publication date: January 11, 2024
    Applicants: BLOOMAGE BIOTECH (TIANJIN) CO., LTD., BLOOMAGE BIOTECHNOLOGY CORPORATION LIMITED
    Inventors: Yuling WANG, Xueping GUO, Huixia LV, Liping QIAO, Shujing REN, Ximing WEN, Xia LI, Jing WANG, Feng GENG
  • Publication number: 20230400177
    Abstract: A flame retardant lamp includes a lamp body, a printed circuit board (PCB), a power supply, a light-emitting plate, a controller, a driving circuit, and a first temperature sensor. The PCB, the power supply, and the light-emitting plate are disposed inside the lamp body, the controller and the driving circuit are disposed on the PCB, and the first temperature sensor is disposed on the light-emitting plate. The controller is electrically connected to the light-emitting plate through the driving circuit, the first temperature sensor is electrically connected to an input end of the controller, and the power supply is electrically connected to a power supply end of the PCB.
    Type: Application
    Filed: March 31, 2023
    Publication date: December 14, 2023
    Inventors: XUN CHEN, ZHANGXUN WENG, XIA LI, YVBING ZHU, KONGJING LIN, WILLIAM JOSEPH TADDA JR
  • Patent number: 11824409
    Abstract: The present disclosure provides a direct starting synchronous reluctance motor rotor, a motor and a rotor manufacturing method. The direct starting synchronous reluctance motor rotor comprises: a rotor core provided with a plurality of slit grooves, two ends of each of the slit grooves being provided with a filling groove respectively to form a magnetic barrier layer, a first end of the filling groove being disposed adjacent to the slit groove, a second end of the filling groove being extended towards an outside of the rotor core, and an outer peripheral surface of the rotor core being provided with a notch communicated with the second end of the filling groove.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: November 21, 2023
    Assignee: GREE ELECTRIC APPLIANCES, INC. OF ZHUHAI
    Inventors: Yusheng Hu, Bin Chen, Jinfei Shi, Yong Xiao, Xia Li, Qinhong Yu
  • Publication number: 20230365985
    Abstract: The invention discloses proteins and biological materials related to rice (Oryza sativa L.) yield, and use thereof in increasing rice yield. The protein related to rice yield disclosed by the invention is OsDREB1C having SEQ ID NO: 1 in the Sequence Listing as its sequence, and having SEQ ID NO: 2 in the Sequence Listing as its coding gene sequence. Experiments have demonstrated that OsDREB1C and the associated biological materials thereof of the invention can enhance the photosynthetic efficiency of a plant, promote nitrogen uptake and transport and increase the nitrogen content in the plant and in its grains, promote earlier heading, and improve yield. The OsDREB1C and the associated biological materials thereof of the invention are of great biological significance and industrial value, and find bright prospects for application.
    Type: Application
    Filed: June 17, 2021
    Publication date: November 16, 2023
    Inventors: Wenbin ZHOU, Xia LI, Shaobo WEI
  • Publication number: 20230360593
    Abstract: A local active matrix display panel, circuits and methods of operation are described. In an embodiment, a local active matrix display panel includes an array of pixel driver chip, a thin film transistor layer in electrical contact with the array of pixel driver chips, and an array of light emitting diodes electrically connected with the thin film transistor layer.
    Type: Application
    Filed: July 11, 2023
    Publication date: November 9, 2023
    Inventors: Hjalmar Edzer Ayco Huitema, Thomas Charisoulis, Xia Li
  • Patent number: 11776608
    Abstract: Certain aspects provide methods and apparatus for in-memory convolution computation. An example circuit for such computation generally includes a memory cell having a bit-line and a complementary bit-line and a computation circuit coupled to a computation input node of the circuit and at least one of the bit-line or the complementary bit-line. In certain aspects, the computation circuit comprises a counter, an NMOS transistor coupled to the memory cell, and a PMOS transistor coupled to the memory cell, drains of the NMOS and PMOS transistors being coupled to the counter.
    Type: Grant
    Filed: November 4, 2019
    Date of Patent: October 3, 2023
    Assignee: QUALCOMM INCORPORATED
    Inventors: Xia Li, Jianguo Yao, Bin Yang
  • Publication number: 20230308001
    Abstract: The present disclosure provides a rotor structure, an electric motor and a rotor manufacturing method. The rotor structure includes a plurality of rotor sheets (100) and a rotating shaft. The rotor sheets (100) are stacked in sequence along an axial direction of the rotor structure. Each of the rotor sheets (100) is provided with a shaft hole (20), a first slot (111), and first filling slots (121) at both ends of the first slot (111). The first slot (111) extends in a direction of a direct axis (3) of the rotor structure and includes slot sections (1110) at opposite sides of the shaft hole (20). The rotating shaft passes through the shaft hole (20) of the plurality of rotor sheets (100). The first slot (111), the first filling slots (121) and the rotating shaft form a first flux barrier layer (101).
    Type: Application
    Filed: July 22, 2021
    Publication date: September 28, 2023
    Inventors: Yusheng HU, Bin CHEN, Yong XIAO, Jinfei SHI, Xia LI, Zhidong ZHANG
  • Patent number: 11749180
    Abstract: A local active matrix display panel, circuits and methods of operation are described. In an embodiment, a local active matrix display panel includes an array of pixel driver chip, a thin film transistor layer in electrical contact with the array of pixel driver chips, and an array of light emitting diodes electrically connected with the thin film transistor layer.
    Type: Grant
    Filed: May 5, 2022
    Date of Patent: September 5, 2023
    Assignee: Apple Inc.
    Inventors: Hjalmar Edzer Ayco Huitema, Thomas Charisoulis, Xia Li
  • Patent number: 11744059
    Abstract: Certain aspects are directed to a static random access memory (SRAM) including an SRAM cell with a pass-gate (PG) transistor having increased threshold voltage to improve the read margin of the SRAM cell. The SRAM generally includes a first SRAM cell having a pull-down (PD) transistor and a PG transistor coupled to the PD transistor. In certain aspects, the SRAM includes a second SRAM cell, the second SRAM cell being adjacent to the first SRAM cell and having a PD transistor and a PG transistor coupled to the PD transistor of the second SRAM cell. The SRAM may also include a gate contact region coupled to a gate region of the PG transistor of the first SRAM cell, wherein at least a portion of the gate contact region is offset from a midpoint between the first SRAM cell and the second SRAM cell.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: August 29, 2023
    Assignee: QUALCOMM INCORPORATED
    Inventors: Xia Li, Haining Yang, Bin Yang