Abstract: The present invention discloses a pyrimidine heterocyclic compound, and a preparation method and medical use thereof. Specifically, the present invention discloses a pyrimidine heterocyclic compound with a structure shown in Formula (A) or a pharmaceutically acceptable salt thereof (groups are each defined in the specification), a pharmaceutical composition comprising the compound, and use of the compound in treatment of cell proliferative diseases (such as cancers).

Abstract: Described herein are PKMYT1 (Myt1) inhibitors and pharmaceutical compositions comprising said inhibitors. The subject compounds and compositions are useful for the treatment of a disease or disorder associated with PKMYT1.

Abstract: Described herein are PKMYT1 (Myt1) inhibitors and pharmaceutical compositions comprising said inhibitors. The subject compounds and compositions are useful for the treatment of a disease or disorder associated with PKMYT1.

Abstract: Example three-dimensional (3D) memory devices, methods, and memory systems for connecting vertical transistors and capacitors using connect structures are disclosed. One example method includes forming a first structure that includes multiple vertical transistors. A connect layer is formed over the first structure. The connect layer is etched to form connect structures, where each of the connect structures is coupled to a corresponding one of the vertical transistors. Multiple capacitors are formed over the connect layer, where each of the plurality of capacitors is coupled to a respective connect structure.

Abstract: Disclosed are a method and apparatus for compressing a topology recognition model, an electronic device, and a medium. The method includes: pruning a to-be-compressed model to obtain a pruned model, and training the pruned model to obtain a trained pruned model; quantifying a bit quantity of a weight parameter of each neural network layer in the trained pruned model from a first bit quantity to a second bit quantity to obtain a highly-quantified pruned model, and training the highly-quantified pruned model to obtain a trained highly-quantified pruned model; using the trained highly-quantified pruned model as the to-be-compressed model, continuously pruning and quantifying the to-be-compressed model until a compressed topology recognition model is obtained, and deploying the compressed topology recognition model on an Internet of Things in Power Systems (IOTIPS) terminal, to reduce a size of the topology recognition model while ensuring the topology recognition model meets an accuracy requirement.

Abstract: Compositions and methods for using nucleosome interacting protein domains to increase accessibility of programmable DNA modification proteins to target chromosomal sequences, thereby increasing efficiency of targeted genome/epigenetic modification in eukaryotic cells.

Abstract: Described herein are MAT2A inhibitors and pharmaceutical compositions comprising said inhibitors. The subject compounds and compositions are useful for the treatment of a disease or disorder associated with MAT2A.

Abstract: Described herein are PHD inhibitors and pharmaceutical compositions comprising said inhibitors. The subject compounds and compositions are useful for the treatment of inflammatory bowel disease.

Abstract: Described herein are PHD inhibitors and pharmaceutical compositions comprising said inhibitors. The subject compounds and compositions are useful for the treatment of anemia.

Abstract: The present invention relates to compounds of formula (I), wherein R1, R2, R3, Y, Q1, Q2, Q3, Q4 and Q5 are as described herein, and their pharmaceutically acceptable salt thereof, and compositions including the compounds and methods of using the compounds.

Abstract: Embodiments of the disclosure provide a method for manufacturing a memory device, the method includes operations. At least one cell block is formed on a wafer, each of the at least one cell block includes multiple memory cells distributed in an array, each of the multiple memory cells includes a transistor and a storage capacitor connected to a source of the transistor. Bit lines are formed on the wafer, and each of the bit lines is connected to a drain of the transistor, here each of the bit lines and the storage capacitor are located on opposite surfaces of the wafer in a thickness direction respectively. A peripheral circuit is formed above the bit lines on the wafer along a perpendicular of the wafer, here the peripheral circuit includes at least a Sensing Amplifier (SA). An electrical connection is formed between the bit line and the SA.

Abstract: The present invention relates to compounds of formula (I), wherein R1 to R3, A, Q1, Q2, W and X are as described herein, and their pharmaceutically acceptable salt thereof, and compositions including the compounds and methods of using the compounds.

Abstract: A voice activity detection device includes an audio processing circuit, a first memory, and a processor. The audio processing circuit processes an audio signal from an audio generator circuit to generate first audio data. The first memory stores the first audio data and a first program code. The processor executes the first program code to operate in a first mode, and is switched from operating in the first mode to operating in a second mode in response to an interrupt signal from the audio generator circuit, in order to determine whether the first audio data stored in the first memory includes a human voice signal, wherein power consumption of the processor operating in the first mode is lower than that in the second mode.

Abstract: The disclosure provides for compounds and methods for modulating or inhibiting TEAD. Further provided herein are pharmaceutical compositions comprising the TEAD inhibitors and methods of treatment using the TEAD inhibitors or the pharmaceutical compositions.

Abstract: Described herein are DGKalpha inhibitors and pharmaceutical compositions comprising said inhibitors. The subject compounds and compositions are useful for the treatment of a disease or disorder associated with DGKalpha.

Abstract: A semiconductor structure and a formation method therefor. The semiconductor structure comprises: a substrate, which has opposite first and second surfaces, and comprises several discrete active areas arranged in a first direction and parallel to a second direction, wherein the first direction is perpendicular to the second direction; word line gate structures, which are disposed in the active areas, extend from the first surface to the second surface, are arranged in the second direction, and run through the active areas along the first direction; a first isolation structure, which is disposed in the substrate and extends from the second surface to the first surface; bit line structures, which are disposed on the first surface, electrically coupled with the active areas, arranged in the first direction, and parallel to the second direction; and capacitor structures, which are disposed on the second surface and electrically coupled with the active areas.

Abstract: Described herein are PHD inhibitors and pharmaceutical compositions comprising said inhibitors. The subject compounds and compositions are useful for the treatment of inflammatory bowel disease.

Abstract: Compositions and methods for using nucleosome interacting protein domains to increase accessibility of programmable DNA modification proteins to target chromosomal sequences, thereby increasing efficiency of targeted genome/epigenetic modification in eukaryotic cells.

Abstract: Embodiments of the disclosure provide a method for manufacturing a memory device, the method includes operations. At least one cell block is formed on a wafer, each of the at least one cell block includes multiple memory cells distributed in an array, each of the multiple memory cells includes a transistor and a storage capacitor connected to a source of the transistor. Bit lines are formed on the wafer, and each of the bit lines is connected to a drain of the transistor, here each of the bit lines and the storage capacitor are located on opposite surfaces of the wafer in a thickness direction respectively. A peripheral circuit is formed above the bit lines on the wafer along a perpendicular of the wafer, here the peripheral circuit includes at least a Sensing Amplifier (SA). An electrical connection is formed between the bit line and the SA.

Abstract: Described herein are MAT2A inhibitors and pharmaceutical compositions comprising said inhibitors. The subject compounds and compositions are useful for the treatment of a disease or disorder associated with MAT2A.