Abstract: Disclosed herein are heterocyclic compounds that inhibit the activity of FLT3. Also described are specific irreversible inhibitors of FLT3. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the FLT3 inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of proliferative diseases or conditions, including hematological malignancies and other diseases or conditions dependent on FLT3 activity.

Abstract: An integrated circuit includes a first cell, a second cell, a buffer zone and a first power rail. The first cell includes a first set of fins extending in a first direction. Each fin of the first set of fins corresponds to a transistor of a first set of transistors. The second cell includes a second set of fins extending in the first direction. Each fin of the second set of fins corresponds to a transistor of a second set of transistors. The second set of fins is separated from the first set of fins in a second direction. The buffer zone is between the first cell and the second cell. The first power rail extends in the first direction, and overlaps at least the buffer zone. The first power rail is in a first metal layer, and is configured to supply a first voltage.

Abstract: The invention relates to new crystal forms of compound (trans)-4-((2-cyclopropylethyl)amino)-5-(4-((4-methylpiperazin-1-yl)methyl)phenyl)-7H-pyrrolo[2,3-d]pyrimidin-7-yl) cyclohexanol trihydrochloride, its hydrate, or solvate, as shown in Formula I. The invention also relates to methods for preparation of the described compound, crystal form, and related intermediate compounds, as well as pharmaceutical compositions containing the compounds. Further described is, the use of the compounds or crystal forms in the production of a medicament for the treatment of a disease, symptom, or condition, or the use in treatment of a disease, symptom or condition.

Abstract: A tungsten-base alloy material and a preparation method therefor. The preparation method comprises: 1) evenly grinding composite powder containing tungsten and zirconium oxide, and then performing annealing treatment at 700-1000° C. to obtain powder A; and 2) grinding and then compression moulding the powder A, and then performing liquid-phase sintering to obtain a tungsten-base alloy blank so as to obtain the tungsten-base alloy material.

Abstract: A method for determining a centerline of a blood vessel in an image associated with a subject is provided. The method includes obtaining a centerline model used for identifying a centerline of a blood vessel and identifying the centerline of the blood vessel based on the centerline model.

Abstract: A semiconductor structure includes first standard cells having first active regions formed over first alternating n-type and p-type wells, the first active regions and the first alternating n-type and p-type wells each extends lengthwise along a first direction, each of the first standard cells includes a first n-type well and a first p-type well; and second standard cells adjacent to the first standard cells, the second standard cells having second active regions formed over second alternating n-type and p-type wells, the second active regions and the second alternating n-type and p-type wells each extends lengthwise along the first direction, each of the second standard cells includes a second n-type well and a second p-type well. The first standard cells have a first cell height, the second standard cells have a second cell height, and the second cell height is greater than the first cell height.

Abstract: The present invention provides compositions and methods of treating and improving the symptoms of IgG4-RD using an antibody or antigen-binding fragment thereof that specifically binds human CD19.

Abstract: Disclosed herein are macrocyclic compounds that inhibit the binding of KRas. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the KRas inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of autoimmune diseases or conditions, heteroimmune diseases or conditions, cancer, including lymphoma, leukemia, lung cancer, colorectal cancer, pancreatic cancer, and other diseases or conditions dependent on KRas interaction.

Abstract: A semiconductor structure includes a first active region, a second active region and a dielectric wall. The second active region is disposed adjacent to the first active region, wherein there is a space between the first active region and the second active region. The dielectric wall is formed within the space between the first active region and the second active region. The dielectric wall has a first wall width and a second wall width different from the first wall width.

Abstract: An aluminum alloy based on a total weight of the aluminum alloy, in percentages by weight, includes 9.12% of Si, 8-11% of Zn, 0.5-1.5% of Mg, 0.2-0.8% of Cu, 0-0.6% of Fe, 0.08-0.25% of Mn, 0-0.10% of Sr, 0-0.05% of Sc, 0-0.5% of Er, and 73.2-82.22% of Al.

Abstract: The disclosure a three-dimensional integrated system with a compatible chip and a manufacturing method thereof, which extends at least one functional chip to form an expanded chip including a functional chip and a peripheral pad. And a pad of the functional chip is electrically drawn out to the peripheral pads by rewiring. Based on an alignment bonding of the two expanded chips corresponding to the peripheral pads, or based on an alignment bonding of the functional chip and the expanded chip, an electrical connection and three-dimensional integration between two functional chips is completed simply and effectively. An integrated connection between two independent functional chips is realized based on the peripheral expanded pads. Each functional chip may be manufactured with its own independent process system.

Abstract: A semiconductor structure is provided. A logic cell includes first and second nanostructure transistors. The first nanostructure transistor is formed in a first active region over a first well region having a first conductivity type. The second nanostructure transistor is formed in a second active region over a second well region having a second conductivity type. The first and second nanostructure transistors share a gate structure. First and second source/drain features of the first nanostructure transistor are formed in the first active region. Third and fourth source/drain features of the second nanostructure transistor are formed in a first portion and a second portion of the second active region, respectively. A first distance between the first active region and the first portion of the second active region is different from a second distance between the first active region and the second portion of the second active region.

Abstract: A method includes forming first, second, third, fourth, fifth, and sixth channel patterns on a semiconductor substrate; forming a first isolation wall interposing the first and second channel patterns, a second isolation wall interposing the third and fourth channel patterns, wherein the first isolation wall further continuously extends to interpose the fifth and sixth channel patterns; forming a first gate pattern extending across the first, second, third, and fourth channel patterns and the first and second isolation walls, and a second gate pattern extending across the fifth and sixth channel patterns and the first isolation wall from the top view, wherein the first, second, third, fourth, and sixth channel patterns respectively have first, second, third, fourth, and sixth dimensions in a lengthwise direction of the first gate pattern, and the sixth dimension is greater than the first, second, third, and fourth dimensions.

Abstract: A method of pre-cleaning in a semiconductor structure includes performing a plasma pre-treatment process to remove impurities from a surface of a semiconductor structure comprising a metal layer and a dielectric layer, performing a selective etch process to remove molybdenum oxide from a surface of the metal layer, the selective etch process comprising soaking the semiconductor structure in a precursor including molybdenum chloride (MoCl5, MoCl6) at a temperature of between 250° C. and 350° C., and performing a post-treatment process to remove chlorine residues and by-products of the selective etch process on the surface of the semiconductor structure.

Abstract: The present disclosure provides a protective method and system combining process monitoring and control in laser drilling. This method includes collecting signal evolution information, a current hole depth, and motion track information in a laser drilling process; performing a feature extraction on the signal to obtain sequential eigenvalues evolving over time, and constructing a prediction model of the penetration time based on the eigenvalues; combining the hole depth and motion track information with the eigenvalues to construct a drilling stage identification model; combining a prediction result of the prediction model of penetration time and identification confidence of the identification model at different moments to construct a state identification model; and judging a current drilling stage according to the model, controlling the processing process according to a judgment result, and using different drilling strategies at different drilling stages.

Abstract: Provided herein are opioid receptor modulators and pharmaceutical compositions comprising said compounds.

Abstract: An aerial vehicle includes a communication unit configured to receive a wireless signal from a geo-fencing device, and a flight controller configured to generate one or more control signals that cause the aerial vehicle to operate in accordance with a set of flight regulations generated based on the wireless signal. The geo-fencing device is configured not for landing of the aerial vehicle. The set of flight regulations includes rules for controlling at least one of the aerial vehicle, a carrier carried by the aerial vehicle, or a payload of the aerial vehicle.

Abstract: Disclosed herein are heterocyclic compounds that inhibit the binding of KRas. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the KRas inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of autoimmune diseases or conditions, heteroimmune diseases or conditions, cancer, including lymphoma, leukemia, lung cancer, colorectal cancer, pancreatic cancer, and other diseases or conditions dependent on KRas interaction.

Abstract: The present invention discloses a number of polycyclic amines that are useful as opioid receptor modulators. The compounds of the invention are useful in both therapeutic and diagnostic methods, including for treating pain, neurological disorders, cardiac disorders, bowel disorders, drug and alcohol addiction, drug overdose, urinary disorders, respiratory disorders, sexual dysfunction, psoriasis, graft rejection or cancer.