Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first well region and longitudinally oriented along a first direction and a second well region adjoining the first well region in a second direction. The semiconductor structure also includes a dielectric wall structure formed over a boundary between the first well region and the second well region and first channel structures vertically suspended over a first region of the first well region and laterally attached to a first sidewall surface of the dielectric wall structure. The semiconductor structure includes a first gate structure wrapping around the first channel structures and second channel structures vertically suspended over a second region of the first well region and a second gate structure wrapping around the second channel structures. In addition, the first channel structures is smaller than the second channel structures.

Abstract: Methods, systems, and apparatuses, including computer programs encoded on computer storage media, for performing operations represented by a neural network, The operations comprise: processing a layer input to a network layer of a neural network and one or more nodal weights of the network layer using one or more compute nodes, where at least one of the one or more compute nodes natively generates output having a first data size. The processing comprises processing at least a plurality of upper bits of the layer input to generate an intermediate output. The processing further comprises processing the intermediate output using a new network layer that immediately succeeds the network layer to generate a layer output. The layer output has a higher precision than an output directly generated by processing the layer input via the network layer using the one or more nodes.

Abstract: A semiconductor structure includes first standard cells having first active regions formed over first alternating n-type and p-type wells, the first active regions and the first alternating n-type and p-type wells each extends lengthwise along a first direction, each of the first standard cells includes a first n-type well and a first p-type well; and second standard cells adjacent to the first standard cells, the second standard cells having second active regions formed over second alternating n-type and p-type wells, the second active regions and the second alternating n-type and p-type wells each extends lengthwise along the first direction, each of the second standard cells includes a second n-type well and a second p-type well. The first standard cells have a first cell height, the second standard cells have a second cell height, and the second cell height is greater than the first cell height.

Abstract: An exemplary method includes receiving a device layout for a standard cell that includes a transistor and a multilayer interconnect. The multilayer interconnect includes a power line, signal lines, a source contact connected to the power line and a source of the transistor, and a drain contact connected to one of the signal lines and a drain of the transistor. The method includes modifying the device layout for the standard cell. For example, if performance of the standard cell is sensitive to power-related features, the method includes enlarging the power line and the source contact and shrinking the signal lines and the drain contact. If performance of the standard cell is sensitive to signal-related features, the method includes shrinking the power line and the source contact and enlarging the signal lines and the drain contact. A cell height of the standard cell is the same after modifying the device layout.

Abstract: Provided are a flexible molecularly imprinted sensor for in-situ and in-vivo detection of gamma-aminobutyric acid content in plants, and a preparation method and a detection method thereof. The flexible molecularly imprinted sensor includes: a flexible substrate and a graphene electrode unit, the graphene electrode unit being arranged on the flexible substrate, where the graphene electrode unit includes a conductive track, a working electrode, a counter electrode, and a reference electrode, where the counter electrode and the reference electrode are respectively located on two sides of the working electrode, and the working electrode is successively provided from inside to outside with a first modification layer, a second modification layer, and a third modification layer, the first modification layer including an AuNPs material, the second modification layer including an Fc-Ni3(HITP)2-ZnFe-LDH material, and the third modification layer including a molecularly imprinted polymer (MIP) material.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first well region, a second well region, a third well region, and a fourth well region. The semiconductor structure includes a dielectric wall structure formed over a boundary of the first well region and the second well region and longitudinally oriented along a first direction and first channel structures, second channel structures, third channel structures, and fourth channel structures vertically suspended. In addition, the first channel structures are attached to a first sidewall surface of the dielectric wall structure, and the second channel structures are attached to a second sidewall surface of the dielectric wall structure. Furthermore, the second channel structures have a second width in the second direction, the third channel structures have a third width in the second direction, and the second width is greater than the third width.

Abstract: A system for controlling a vehicle, including one or more communication modules and one or more processors operably coupled to the communication modules. The one or more processors are configured to individually or collectively: receive a geo-fence identifier associated with geo-fence information, where the geo-fence identifier uniquely identifies the geo-fence from other geo-fences; obtain one or more activity regulations for the vehicle based on the geo-fence identifier; and control operation of the vehicle according to the one or more activity regulations.

Abstract: A semiconductor structure includes a substrate, a gate pattern structure, source/drain contacts on opposite sides of the gate pattern structure, a first via and a second via extending through the substrate and in contact with the source/drain contacts, respectively, a gate-cut isolation structure cutting the gate pattern structure. The gate-cut isolation structure extends to a position laterally between the first via and the second via.

Abstract: A method for manufacturing a semiconductor structure includes forming a first fin and a second fin extending in a first direction. Each of the first and second fins includes first semiconductor layers and second semiconductor layers alternating stacked. The method further includes forming an isolation feature between the first and second fins in a second direction perpendicular to the first direction, forming a dummy gate structure over the first fin, the second fin, and the isolation feature, forming an interlayer dielectric layer on opposite sides of the dummy gate structure in the first direction, replacing the dummy gate structure and the first semiconductor layers with a gate structure, replacing the gate structure with a first dielectric structure, forming source/drain contacts on opposite sides of the first dielectric structure in the first direction, and forming a feed-through via under and in contact with the source/drain contacts.

Abstract: A method includes forming a plurality of first semiconductor channel layers stacked in a vertical direction over a substrate; forming a first gate strip surrounding each of the first semiconductor channel layers; forming a plurality of first source/drain regions on either side of each of the first semiconductor channel layers; forming a front-side source/drain contact over a front-side of a first one of the first source/drain regions; forming a first back-side source/drain contact over a back-side of a second one of the first source/drain regions, wherein a front-side of the second one of the first source/drain regions is free of a metal contact; forming a signal line over the front-side source/drain contact; forming a power supply voltage line over the first back-side source/drain contact.

Abstract: Disclosed herein are heterocyclic compounds that activate GLP-1R pathways. Also disclosed are pharmaceutical compositions that include the compounds. Methods of using the GLP-1R agonists are disclosed, alone or in combination with other therapeutic agents, for the treatment of diabetes, obesity, and other diseases or conditions dependent on GLP-1R pathways.

Abstract: A wheat leaf rust resistance protein, its encoding gene, and the use thereof are provided. The wheat leaf rust resistance protein includes any of the following (a)-(c): (a) a protein, which consists of the amino acid sequence represented by SEQ ID NO: 3; or (b) a protein, which has an amino acid sequence obtained after the amino acid sequence of the protein (a) undergoes substitution and/or deletion and/or addition of one or more amino acids and which has anti-wheat-leaf-rust activity; or (c) a protein, which has 80% or more identity with the amino acid sequence defined in any of (a) and (b) and which has the same function.

Abstract: A method of forming a semiconductor structure includes a number of operations. Source/drain regions are formed on opposite sides of channel regions over a substrate. A gate structure is formed over the channel regions. A plurality of metal line is formed over a front-side of the substrate. A plurality of metallization layers is formed on a backside of the substrate. A backside source/drain contact is formed on a second one of the source/drain regions, wherein the second one of the source/drain regions is free of the front-side source/drain contact.

Abstract: A semiconductor structure includes a substrate. The substrate includes a shielding region and a device region. The shielding region includes a first active region parallel to a first direction. The device region includes a second active region parallel to the first direction. The semiconductor structure also includes first isolation structures located on the shielding region. The first isolation structures run through the first active region along the second direction. The semiconductor structure also includes first gate structures located on the device region. The first gate structures cross the second active region along the second direction. The semiconductor structure also includes a second isolation structure located on the device region. The second isolation structure runs through the second active region along the second direction. The semiconductor structure also includes a dielectric layer on the substrate and an inductance coil on the dielectric layer.

Abstract: Some embodiments of the present disclosure provide methods and systems for determining a hemodynamic parameter. The method may include: obtaining image data of a subject being acquired in a rest state; obtaining a trained machine learning model; and determining, based on the trained machine learning model, at least one target hemodynamic parameter of the subject. The trained machine learning model may be obtained based on multiple sets of sample image data. Each set of the multiple sets of sample image data may include a first image data and at least one of a second image data or a third image data. The first image data may be acquired in a rest state of a first sample subject, the second image data may be acquired in a hyperemic state of the first sample subject, and the third image data may be acquired in a hyperemic state of a second sample subject including the first sample subject.

Abstract: This application discloses a system, a communication apparatus, an optical module, a method, and an optical network. The system may include a communication apparatus and an optical module. The communication apparatus includes a control module and a service module. The optical module includes a storage unit and an optical transmitter unit. The storage unit may store nonlinear compensation information of a modulator in the optical transmitter unit. After the optical transmitter unit is directly connected to the service module, the control module may read the nonlinear compensation information from the storage unit, and configure a nonlinear compensation coefficient of the service module based on the nonlinear compensation information. The service module sends an electrical signal to the optical transmitter unit based on the configured nonlinear compensation coefficient. The modulator modulates an electrical signal obtained through nonlinear compensation into an optical signal.

Abstract: Mechanism for anomaly detection are provided, the mechanisms including: initializing a policy network; sampling a mini-batch of data from a training data set, wherein each mini-batch has a plurality of sample sequences, each having a plurality of time steps; for each time step of each sample sequence in each mini-batch: determining an action to be taken based on the policy of the network; and determining a reward; determining a gradient of an expected discounted cumulative reward; and updating the policy network.

Abstract: The present invention provides MDM2 inhibitor compounds of Formula I, wherein the variables are defined above, which compounds are useful as therapeutic agents, particularly for the treatment of cancers. The present invention also relates to pharmaceutical compositions that contain an MDM2 inhibitor.

Abstract: The present invention provides compositions and methods of treating and improving the symptoms of AIHA using an antibody or antigen-binding fragment thereof that specifically binds human CD19.