Abstract: An image processing method includes obtaining an image captured by an image capture device. The image capture device includes a first capture module configured to capture a first image and a second capture module configured to capture a second image, and fields of view of the first capture module and the second capture module partially overlap. The method further includes, in response to an image display mode switching condition being met, controlling an image display device to select a 2D image display mode in which the first image is displayed, or a 3D image display mode in which the first image and the second image are displayed.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first well region and longitudinally oriented along a first direction and a second well region adjoining the first well region in a second direction. The semiconductor structure also includes a dielectric wall structure formed over a boundary between the first well region and the second well region and first channel structures vertically suspended over a first region of the first well region and laterally attached to a first sidewall surface of the dielectric wall structure. The semiconductor structure includes a first gate structure wrapping around the first channel structures and second channel structures vertically suspended over a second region of the first well region and a second gate structure wrapping around the second channel structures. In addition, the first channel structures is smaller than the second channel structures.

Abstract: An inductor coil includes: a substrate, including a base, a device layer on the base, a conductive layer, and an electrical interconnect structure; a plurality of stacked coil layers being on the substrate, each of the plurality of stacked coil layers including a plurality of sub-coil structures on a same layer; and a plurality of electrical connection layers between two adjacent coil layers, a projection pattern of each electrical connection layer on a surface of the substrate being within a range of projection patterns of two adjacent coil layers that are in contact with the plurality of electrical connection layers on the surface of the substrate, and all the plurality of coil layers being connected in parallel through all the plurality of electrical connection layers.

Abstract: A semiconductor structure includes first standard cells having first active regions formed over first alternating n-type and p-type wells, the first active regions and the first alternating n-type and p-type wells each extends lengthwise along a first direction, each of the first standard cells includes a first n-type well and a first p-type well; and second standard cells adjacent to the first standard cells, the second standard cells having second active regions formed over second alternating n-type and p-type wells, the second active regions and the second alternating n-type and p-type wells each extends lengthwise along the first direction, each of the second standard cells includes a second n-type well and a second p-type well. The first standard cells have a first cell height, the second standard cells have a second cell height, and the second cell height is greater than the first cell height.

Abstract: The present disclosure provides a method for evaluating a hemodynamic characteristic, comprising: obtaining a medical image of a subject, the medical image including at least a portion of a vascular structure; determining at least one property parameter of the vascular structure by inputting the medical image into a trained parameter determination model; and determining at least one hemodynamic characteristic of the vascular structure by inputting the at least one property parameter into a vascular fluid dynamic model.

Abstract: Disclosed herein are heterocyclic compounds that inhibit the binding of menin and MLL or MLL fusion proteins. Also described are specific covalent inhibitors of a menin or menin-MLL interaction. Also disclosed are pharmaceutical compositions that include the compounds described herein. Methods of using the menin or menin-MLL irreversible inhibitors are disclosed, alone or in combination with other therapeutic agents, for the treatment of autoimmune diseases or conditions, heteroimmune diseases or conditions, cancer, including lymphoma, leukemia and other diseases or conditions dependent on menin or menin-MLL interaction.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first well region, a second well region, a third well region, and a fourth well region. The semiconductor structure includes a dielectric wall structure formed over a boundary of the first well region and the second well region and longitudinally oriented along a first direction and first channel structures, second channel structures, third channel structures, and fourth channel structures vertically suspended. In addition, the first channel structures are attached to a first sidewall surface of the dielectric wall structure, and the second channel structures are attached to a second sidewall surface of the dielectric wall structure. Furthermore, the second channel structures have a second width in the second direction, the third channel structures have a third width in the second direction, and the second width is greater than the third width.

Abstract: A collapsible wheelchair, including a front support frame, a backrest bracket, a rear support frame and a bracket connecting rod, which are hinged with each other to form a first connecting rod mechanism; the seat connecting rod is hinged with the front support frame and a seat bracket respectively; the front support frame, the backrest bracket, the seat bracket and the seat connecting rod form a second connecting rod mechanism; a hinge point of the backrest bracket and the seat bracket is located above a central plane of the seat bracket.

Abstract: A system, vehicle, and method for controlling a vehicle using geo-fence-based activity regulations that change over time. The system includes processor(s) configured to receive a geo-fence identifier that uniquely identifies a geo-fence, obtain one or more activity regulations for the vehicle based on the geo-fence identifier, and control operation of the vehicle according to a set of activity regulations applicable based on a current time. The activity regulations change over time such that a first set of activity regulations applicable at a first time differs from a second set applicable at a second time. At least one of boundaries or restrictions associated with the geo-fence may change over time. The geo-fence may comprise a dynamic indicator that changes over time to reflect changes in the activity regulations. The activity regulations may change periodically, in accordance with a pre-set schedule, or in response to a detected event or condition.

Abstract: A semiconductor structure includes a first active region, a second active region and a dielectric wall. The second active region is disposed adjacent to the first active region, wherein there is a space between the first active region and the second active region. The dielectric wall is formed within the space between the first active region and the second active region. The dielectric wall has a first wall width and a second wall width different from the first wall width.

Abstract: The subject matter described herein is directed to compounds of Formula A; and pharmaceutically acceptable salts thereof, and compositions thereof, including pharmaceutical compositions, and methods of treating disorders associated with TAM receptor tyrosine kinases and/or TYRO3.

Abstract: Disclosed is a method for image processing. The method includes: obtaining one or more image sequences, each of the one or more image sequences including one or more images; determining key information of at least a portion of the one or more images in each of the one or more image sequences; and processing the one or more image sequences based on feature information of each of the one or more image sequences, the feature information of each of the one or more image sequences including the key information of the at least a portion of the one or more images in the image sequence.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first well region and longitudinally oriented along a first direction and a second well region adjoining the first well region in a second direction. The semiconductor structure also includes a dielectric wall structure formed over a boundary between the first well region and the second well region and first channel structures vertically suspended over a first region of the first well region and laterally attached to a first sidewall surface of the dielectric wall structure. The semiconductor structure includes a first gate structure wrapping around the first channel structures and second channel structures vertically suspended over a second region of the first well region and a second gate structure wrapping around the second channel structures. In addition, the first channel structures is smaller than the second channel structures.

Abstract: Methods, systems, and apparatuses, including computer programs encoded on computer storage media, for performing operations represented by a neural network, The operations comprise: processing a layer input to a network layer of a neural network and one or more nodal weights of the network layer using one or more compute nodes, where at least one of the one or more compute nodes natively generates output having a first data size. The processing comprises processing at least a plurality of upper bits of the layer input to generate an intermediate output. The processing further comprises processing the intermediate output using a new network layer that immediately succeeds the network layer to generate a layer output. The layer output has a higher precision than an output directly generated by processing the layer input via the network layer using the one or more nodes.

Abstract: A semiconductor structure includes first standard cells having first active regions formed over first alternating n-type and p-type wells, the first active regions and the first alternating n-type and p-type wells each extends lengthwise along a first direction, each of the first standard cells includes a first n-type well and a first p-type well; and second standard cells adjacent to the first standard cells, the second standard cells having second active regions formed over second alternating n-type and p-type wells, the second active regions and the second alternating n-type and p-type wells each extends lengthwise along the first direction, each of the second standard cells includes a second n-type well and a second p-type well. The first standard cells have a first cell height, the second standard cells have a second cell height, and the second cell height is greater than the first cell height.

Abstract: An exemplary method includes receiving a device layout for a standard cell that includes a transistor and a multilayer interconnect. The multilayer interconnect includes a power line, signal lines, a source contact connected to the power line and a source of the transistor, and a drain contact connected to one of the signal lines and a drain of the transistor. The method includes modifying the device layout for the standard cell. For example, if performance of the standard cell is sensitive to power-related features, the method includes enlarging the power line and the source contact and shrinking the signal lines and the drain contact. If performance of the standard cell is sensitive to signal-related features, the method includes shrinking the power line and the source contact and enlarging the signal lines and the drain contact. A cell height of the standard cell is the same after modifying the device layout.

Abstract: Provided are a flexible molecularly imprinted sensor for in-situ and in-vivo detection of gamma-aminobutyric acid content in plants, and a preparation method and a detection method thereof. The flexible molecularly imprinted sensor includes: a flexible substrate and a graphene electrode unit, the graphene electrode unit being arranged on the flexible substrate, where the graphene electrode unit includes a conductive track, a working electrode, a counter electrode, and a reference electrode, where the counter electrode and the reference electrode are respectively located on two sides of the working electrode, and the working electrode is successively provided from inside to outside with a first modification layer, a second modification layer, and a third modification layer, the first modification layer including an AuNPs material, the second modification layer including an Fc-Ni3(HITP)2-ZnFe-LDH material, and the third modification layer including a molecularly imprinted polymer (MIP) material.