Abstract: Some novel features pertain to a first example provides a semiconductor device that includes a printed circuit board (PCB), asset of solder balls and a die. The PCB includes a first metal layer. The set of solder balls is coupled to the PCB. The die is coupled to the PCB through the set of solder balls. The die includes a second metal layer and a third metal layer. The first metal layer of the PCB, the set of solder balls, the second and third metal layers of the die are configured to operate as an inductor in the semiconductor device. In some implementations, the die further includes a passivation layer. The passivation layer is positioned between the second metal layer and the third metal layer. In some implementations, the second metal layer is positioned between the passivation layer and the set of solder balls.

Abstract: Systems and methods for predicting content performance with interest data include receiving a content selection request that includes a client identifier. One or more topical interest categories associated with the client identifier may be used as inputs to a prediction model to predict the likelihood of an online action occurring as a result of third-party content being selected. The predicted likelihood may be used to select third-party content.

Abstract: A method and circuit for characterizing a process variation of a semiconductor die is disclosed. In a particular embodiment, the method includes operating a circuit at multiple supply voltage levels to generate race condition testing data. The circuit is disposed on at least one die of a wafer and includes at least one racing path circuit having at least two paths. The method further includes collecting the race condition testing data and evaluating the collected race condition testing data. The race condition testing data is correlated to a process variation of the at least one die.

Abstract: Circuit elements are characterized for effects of proximity context on electrical characteristic. Based on the characterization, proximity context cell models, and corresponding modeled electrical characteristic values are obtained. Logic cells are characterized and modeled according to the proximity context cell models. Optionally the electrical characteristic can be time delay, leakage, dynamic power, or coupling noise among other parameters.

Abstract: Systems and method for defining a timing parameter for a circuit element based on process variation, including, determining a point of failure parameter associated with the timing parameter, the point of failure parameter correlated with a specific value of the process variation. A standard deviation associated with the point of failure parameter is determined. The process variation per the standard deviation is calculated and the timing parameter for the circuit element is defined as a function of the failure parameter, the standard deviation, and the process variation per the standard deviation. A margin factor, which varies with the standard deviation, is optionally applied to the timing parameter. The timing parameter may be one of a setup time or hold time.

Abstract: Systems and method for defining a timing parameter for a circuit element based on process variation, including, determining a point of failure parameter associated with the timing parameter, the point of failure parameter correlated with a specific value of the process variation. A standard deviation associated with the point of failure parameter is determined. The process variation per the standard deviation is calculated and the timing parameter for the circuit element is defined as a function of the failure parameter, the standard deviation, and the process variation per the standard deviation. A margin factor, which varies with the standard deviation, is optionally applied to the timing parameter. The timing parameter may be one of a setup time or hold time.

Abstract: Circuit elements are characterized for effects of proximity context on electrical characteristic. Based on the characterization, proximity context cell models, and corresponding modeled electrical characteristic values are obtained. Logic cells are characterized and modeled according to the proximity context cell models. Optionally the electrical characteristic can be time delay, leakage, dynamic power, or coupling noise among other parameters.

Abstract: A method and circuit for characterizing a process variation of a semiconductor die is disclosed. In a particular embodiment, the method includes operating a circuit at multiple supply voltage levels to generate race condition testing data. The circuit is disposed on at least one die of a wafer and includes at least one racing path circuit having at least two paths. The method further includes collecting the race condition testing data and evaluating the collected race condition testing data. The race condition testing data is correlated to a process variation of the at least one die.

Abstract: A cell library which enables reduced quantization over-design in large scale circuit design is provided. Library cells having the same cell function have drive strengths selected to provide delays about equal to a predetermined set of design delays, at a nominal load corresponding to the cell function. In contrast, conventional cell libraries typically have drive strengths which correspond to a predetermined set of cell physical areas. Preferably, the spacing between adjacent design delays is a non-decreasing function of cell drive strength. Such spacing reduces quantization induced over-design compared to conventional cell libraries which have a design delay spacing that is a decreasing function of cell drive strength. On-chip clock distribution is an important application where cell libraries of the invention can provide significant advantages.

Abstract: A cell library which enables reduced quantization over-design in large scale circuit design is provided. Library cells having the same cell function have drive strengths selected to provide delays about equal to a predetermined set of design delays, at a nominal load corresponding to the cell function. In contrast, conventional cell libraries typically have drive strengths which correspond to a predetermined set of cell physical areas. Preferably, the spacing between adjacent design delays is a non-decreasing function of cell drive strength. Such spacing reduces quantization induced over-design compared to conventional cell libraries which have a design delay spacing that is a decreasing function of cell drive strength.

Abstract: A standard cell library having a globally scalable transistor channel length is provided. In this library, the channel length of every transistor within a cell can be globally scaled, within a predetermined range, without changing cell functionality, cell size, or cell terminal positions. Such a cell library advantageously addresses the intra-generational redesign problem, since cell channel lengths in library cells can be decreased as fabrication technology evolves, without requiring intra-generational redesign of existing circuit layouts. Preferably, this change in channel length is obtained by altering a single mask layer of the library design (e.g., the mask for the poly-silicon layer).

Abstract: A simple, approximate power optimization in connection with automatic large scale circuit design using a cell library is provided. The cell library of the present invention provides active region information for each cell, and preferably also provides conventional parameters such as cell physical area and cell performance information. Typically, several cells having differing parameters correspond to each cell function provided by the library. A cost function is defined which depends on active region information, and can also depend on physical area and performance. A cell design including cells selected from the library is optimized by substitution of functionally equivalent cells from the library to minimize the cost function. Minimization of active region area provides a simple way to approximately minimize power consumption. Optionally, a second optimization can be performed with a higher fidelity power model using the approximately power-minimized design as a starting point.

Abstract: A cell library which enables reduced quantization over-design in large scale circuit design is provided. Library cells having the same cell function have drive strengths selected to provide delays about equal to a predetermined set of design delays, at a nominal load corresponding to the cell function. In contrast, conventional cell libraries typically have drive strengths which correspond to a predetermined set of cell physical areas. Preferably, the spacing between adjacent design delays is a non-decreasing function of cell drive strength. Such spacing reduces quantization induced over-design compared to conventional cell libraries which have a design delay spacing that is a decreasing function of cell drive strength. On-chip clock distribution is an important application where cell libraries of the invention can provide significant advantages.

Abstract: A standard cell library having a globally scalable transistor channel length is provided. In this library, the channel length of every transistor within a cell can be globally scaled, within a predetermined range, without changing cell functionality, cell size, or cell terminal positions. Such a cell library advantageously addresses the intra-generational redesign problem, since cell channel lengths in library cells can be decreased as fabrication technology evolves, without requiring intra-generational redesign of existing circuit layouts. Preferably, this change in channel length is obtained by altering a single mask layer of the library design (e.g., the mask for the poly-silicon layer).

Abstract: A cell library which enables reduced quantization over-design in large scale circuit design is provided. Library cells having the same cell function have drive strengths selected to provide delays about equal to a predetermined set of design delays, at a nominal load corresponding to the cell function. In contrast, conventional cell libraries typically have drive strengths which correspond to a predetermined set of cell physical areas. Preferably, the spacing between adjacent design delays is a non-decreasing function of cell drive strength. Such spacing reduces quantization induced over-design compared to conventional cell libraries which have a design delay spacing that is a decreasing function of cell drive strength.

Abstract: A simple, approximate power optimization in connection with automatic large scale circuit design using a cell library is provided. The cell library of the present invention provides active region information for each cell, and preferably also provides conventional parameters such as cell physical area and cell performance information. Typically, several cells having differing parameters correspond to each cell function provided by the library. A cost function is defined which depends on active region information, and can also depend on physical area and performance. A cell design including cells selected from the library is optimized by substitution of functionally equivalent cells from the library to minimize the cost function. Minimization of active region area provides a simple way to approximately minimize power consumption. Optionally, a second optimization can be performed with a higher fidelity power model using the approximately power-minimized design as a starting point.

Abstract: A simple, approximate power optimization in connection with automatic large scale circuit design using a cell library is provided. The cell library of the present invention provides active region information for each cell, and preferably also provides conventional parameters such as cell physical area and cell performance information. Typically, several cells having differing parameters correspond to each cell function provided by the library. A cost function is defined which depends on active region information, and can also depend on physical area and performance. A cell design including cells selected from the library is optimized by substitution of functionally equivalent cells from the library to minimize the cost function. Minimization of active region area provides a simple way to approximately minimize power consumption. Optionally, a second optimization can be performed with a higher fidelity power model using the approximately power-minimized design as a starting point.

Abstract: The invention provides a method and system for reducing capacitive coupling for transmission lines. Where there is a plurality of parallel transmission lines, a first half of the transmission lines (every second one) are inverted at their driving points, and are reinverted at a half-way point between their driving points and their receiving points, using an inverter placed halfway along the transmission line. A second half of the transmission lines are inverted at the half-way point, and are reinverted at their receiving points. Thereby, every second one of multiple transmission lines is inverted at any point in the transmission line, causing capacitive coupling to self-cancel across the entire transmission line, reducing crosstalk and speeding rise time.

Abstract: A speed-up circuit is employed in a semiconductor chip of the type that includes a P-type substrate with a plurality of NPN transistors integrated into a surface thereof. Those transistors include a first NPN transistor having a base which receives a control signal, a collector coupled to a voltage bus, and an emitter which drives a first resistor plus a base of a second NPN transistor plus a small parasitic capacitance. The second NPN transistor has a collector coupled to a voltage bus, and an emitter which drives a second resistor plus a larger parasitic capacitance. And, the speed-up circuit is comprised of: a PNP transistor having an emitter coupled to the large capacitance, a base coupled to a tap on the first resistor, and a collector coupled to the substrate.

Abstract: An electrostatic discharge protection circuit includes a P.sup.- doped channel and an N.sup.- doped channel that form a serial path between a signal pad and a transistor. Holes are depleted from the P.sup.- doped channel in response to a negative electrostatic discharge on the input signal pad; and electrons are depleted from the N.sup.- doped channel in response to a positive electrostatic discharge on the input signal pad. When either depletion occurs, the path from the signal pad to its transistor is open circuited; and so the transistor is protected. Conversely, when no electrostatic charge exists on the signal pad, the path through the P.sup.- doped channel and the N.sup.- doped channel is highly conductive; and so signals pass between the pad and the transistor very quickly.