Abstract: A method including forming a lead halide precursor ink comprising a group 1 metal halide, a lead halide, an ionic liquid, and a solvent; depositing the lead halide precursor ink onto a substrate; drying the lead halide precursor ink to form a lead halide film; and annealing the lead halide film.

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.

Abstract: A communication method and apparatus. The communication method includes: A terminal device transmits first capability information to a first network device, where the first capability information indicates that the terminal device supports sending a sounding reference signal (SRS) by using a maximum of a first bandwidth size of bandwidth; the terminal device transmits second capability information to a second network device, where the second capability information indicates that the terminal device supports sending data or control information by using a maximum of a second bandwidth size of bandwidth; the terminal device obtains first configuration information indicating that a size of bandwidth configured for the SRS is not greater than the first bandwidth size; and the terminal device obtains second configuration information indicating that a size of bandwidth configured for the data or control information is not greater than the second bandwidth size.

Abstract: A computer-implemented method and system for modeling the pathophysiology of a human intervertebral disc may comprise an anatomic dataset and a biophysical model disposed in connection with a simulation program. The biophysical model may comprise a plurality of subsystems, including, without limitation, governing equations, constitutive equations, boundary conditions, initial conditions, and parameter values. By altering certain subsystems of the biophysical model, a user may selectively solve for certain pathophysiological metrics using at least one of a plurality of algorithms disposed within the simulation program.

Abstract: A clamping device and a machining method. The clamping device comprises: a base; a clamping head comprising a blind rivet and a locking member, the blind rivet comprising a middle column segment and enlarged portions at two ends, and the locking member being connected to an upper end of the blind rivet and defining a clamping opening; a lower cavity connected to the base; an upper cavity comprising an annular peripheral wall and a top wall having a central hole, the top wall being clamped between the two enlarged portions, the middle column segment of the blind rivet movably passing through the central hole, and the upper cavity being connected to the lower cavity in a fit manner; an elastic member located in the peripheral wall and supported between the enlarged portion at a lower portion of the blind rivet and the top wall; and a support cylinder movably fitted in the lower cavity, the support cylinder being supported below the elastic member.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and form a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.

Abstract: A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.

Abstract: A carbon capture system includes: (a) an absorber having an inorganic solvent carbon dioxide capture section, a water wash section between the organic solvent carbon dioxide capture section and the inorganic solvent carbon dioxide capture section, a flue gas inlet at the organic solvent carbon dioxide capture section and a treated flue gas outlet at the inorganic solvent carbon dioxide capture section, (b) a stripper, (c) a polishing circuit, and (d) a water wash circuit. A related method of carbon capture includes sequentially subjecting the flue gas to (i) organic solvent carbon dioxide capture, (ii) water washing and (iii) inorganic solvent carbon dioxide capture.

Abstract: An apparatus, computer program product, and method are provided for the determination of one or more components of an EC number through the application of a level-by-level modeling approach capable of conducting feature reconstruction and classifier training simultaneously, based on encoded aspects of a sequence listing for a protein with an unknown function. The method includes receiving a sequence source data object associated with an enzyme; extracting a sequence data set from the sequence source data object; encoding the sequence data set into a first and second encoded sequence; generating a first predicted characteristic of the enzyme by applying the first and second encoded sequence to a first level of a model comprising a plurality of levels; and generating a second predicted characteristic of the enzyme by applying the first and the second encoded sequences to a second level of the model comprising a plurality of levels.

Abstract: A signal sending method includes generating M signals. The signal sending method also includes sending the M signals on M time-frequency resource elements. The M signals are in a one-to-one correspondence with the M time-frequency resource elements. At least two of the M time-frequency resource elements overlap in a frequency domain. Any two of the M time-frequency resource elements are free from overlapping in a time domain. M is an integer greater than 1.

Abstract: A signal sending method includes generating a first signal based on a reference sequence or an orthogonal cover code (OCC), where the reference sequence is a sequence in a sequence set; and any two sequences in the sequence set are orthogonal to each other; or the OCC is included in an OCC set, and any two OCCs in the OCC set are orthogonal to each other; and sending the first signal on M time-frequency resource elements, where the first signal includes M sub-signals; the M time-frequency resource elements are in a one-to-one correspondence with the M sub-signals; any two of the M time-frequency resource elements do not overlap in frequency domain or in time domain; and M is an integer greater than 1.

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.

Abstract: A method for annotating antibiotic resistance genes includes receiving a raw sequence encoding of a bacterium, determining first, in a level 0 module, whether the raw sequence encoding includes an antibiotic resistance gene (ARG), determining second, in a level 1 module, a resistant drug type, a resistance mechanism, and a gene mobility for the ARG, determining third, in a level 2 module, if the ARG is a beta-lactam, a sub-type of the beta-lactam, and outputting the ARG, the resistant drug type, the resistance mechanism, the gene mobility, and the sub-type of the beta-lactam. The level 0 module, the level 1 module and the level 2 module each includes a deep convolutional neural network (CNN) model.

Abstract: A method of recovering enriched iron fines from bauxite waste includes calcining particles of bauxite waste to form oxygen carrier particles, subjecting the oxygen carrier particles to chemical looping combustion at a temperature of about 950° C.-1,050° C. for energy production and to produce the enriched iron fines as a by-product from the oxygen carrier particles via natural attrition and collecting the enriched iron fines.

Abstract: An uplink reference signal association method and a communication apparatus. The method includes: a first network device generates first configuration information, where the first configuration information indicates an association relationship between uplink reference signals simultaneously sent on different carriers, and the uplink reference signals having the association relationship share an antenna port or the uplink reference signals having the association relationship have a phase difference. The first network device sends the first configuration information to a terminal device. Through implementation, configuration of a large-bandwidth uplink reference signal can be implemented.

Abstract: This application provides a positioning reference signal PRS association method and a communication apparatus. The method includes: A terminal device receives second configuration information sent by a positioning management device, where the second configuration information indicates an association relationship between PRSs on at least two frequencies; and the terminal device measures the PRSs having the association relationship, where the PRSs having the association relationship share a same antenna port or the PRSs having the association relationship have a phase difference. By implementing this application, large-bandwidth PRS configuration can be implemented.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.

Abstract: The present disclosure provides systems, compositions, and methods for simultaneously editing both strands of a double-stranded DNA sequence at a target site to be edited. In some aspects, the systems comprise a first and second prime editor complex, wherein each of the first and second prime editor complexes comprises (1) a prime editor comprising (i) a nucleic acid programmable DNA binding protein (napDNAbp), and (ii) a polypeptide having an RNA-dependent DNA polymerase activity; and (2) a pegRNA comprising a spacer sequence, gRNA core, a DNA synthesis template, and a primer binding site, wherein the DNA synthesis template encodes a desired DNA sequence or a complement thereof, wherein the desired DNA sequence and the complement thereof form a duplex comprising an edited portion which integrates into the target site to be edited. In some aspects, the systems comprise a first, second, third, and fourth prime editor complex, each comprising a prime editor and a PEgRNA.

Abstract: The disclosure provides a burner and a gas-fired clothes dryer, where the burner includes a combustion barrel, a barrel-shaped gas mixing part and a disc-shaped flow guide part, the combustion barrel has a gas inlet, a barrel wall of the combustion barrel is uniformly provided with a plurality of vent holes; the gas mixing part is arranged in the combustion barrel and parallel to an axis of the combustion barrel, a gas inlet end of the gas mixing part is opposite to the gas inlet; the flow guide part is arranged in the combustion barrel and located between a gas outlet end of the gas mixing part and a closed end of the combustion barrel and inclined relative to the axis of the gas mixing part; a diameter of the flow guide part is between a diameter of the combustion

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.