Abstract: A color liquid crystal display panel includes: a plurality of layers of liquid crystal cells that are arranged parallel to each other and bonding members bonding the plurality of layers of liquid crystal cells. Each of the liquid crystal cells includes a thin-film transistor substrate, a package substrate, and a dye-doped liquid crystal layer sealed between the thin-film transistor substrate and the package substrate. The dye-liquid crystal layer includes a liquid crystal material, a dichroic dye, and a chiral reagent. The dichroic dye of each of the liquid crystal cells absorbs light of a predetermined range of wavelength. The plurality of layers of liquid crystal cell respectively absorbs lights of different ranges of wavelength. The color liquid crystal display panel requires no conventionally used polarizer and color filter, so that the manufacture cost of and the requirement for backlighting brightness by the liquid crystal display panel can both be reduced.

Abstract: The present invention provides a color liquid crystal display panel, which includes: a plurality of mutually parallel layers of liquid crystal cells (2) and bonding members (8) bonding the plurality of layers of liquid crystal cells (2). Each of the liquid crystal cells (2) includes a thin-film transistor substrate (20), a package substrate (30), and a dye-liquid crystal layer (40) sealed between the thin-film transistor substrate (20) and the package substrate (30). The dye-liquid crystal layer (40) includes a liquid crystal material and a dichroic dye. The dichroic dye of each of the liquid crystal cells (2) absorbs light of a predetermined range of wavelength. The plurality of layers of liquid crystal cells (2) respectively absorbs lights of different ranges of wavelength.

Abstract: A conductive strap structure in lateral contact with a top semiconductor layer is formed on an inner electrode of a deep trench capacitor. A cavity overlying the conductive strap structure is filled a dielectric material to form a dielectric capacitor cap having a top surface that is coplanar with a topmost surface of an upper pad layer. A semiconductor mandrel in lateral contact with the dielectric capacitor cap is formed. The combination of the dielectric capacitor cap and the semiconductor mandrel is employed as a protruding structure around which a fin-defining spacer is formed. The semiconductor mandrel is removed, and the fin-defining spacer is employed as an etch mask in an etch process that etches a lower pad layer and the top semiconductor layer to form a semiconductor fin that laterally wraps around the conductive strap structure. An access finFET is formed employing two parallel portions of the semiconductor fin.

Abstract: An integrated FinFET and deep trench capacitor structure and methods of manufacture are provided. The method includes forming a plurality of fin structures from a substrate material. The method further includes forming a deep trench capacitor structure, contacting at least selected fin structures. The method further includes forming a liner over the deep trench capacitor structure. The method further includes forming replacement gate structures with the liner over the deep trench capacitor structure protecting the deep trench capacitor structure during deposition and etching processes.

Abstract: An integrated FinFET and deep trench capacitor structure and methods of manufacture are provided. The method includes forming deep trench capacitor structures in a silicon on insulator (SOI) wafer. The method further includes forming a plurality of composite fin structures from a semiconductor material of the SOI wafer and conductive material of the deep trench capacitor structures. The method further includes forming a liner over the deep trench capacitor structures including the conductive material of the deep trench capacitor structures. The method further includes forming replacement gate structures with the liner over the deep trench capacitor structures protecting the conductive material during deposition and etching processes.

Abstract: A method including forming a deep trench in a semiconductor-on-insulator substrate including an SOI layer directly on top of a buried oxide layer directly on top of a base substrate, masking only a top surface of the SOI layer and a sidewall of the SOI layer exposed within an upper portion of the deep trench with a dielectric material without masking any surface of the base substrate exposed within a lower portion of the deep trench, and forming a bottle shaped trench by etching the base substrate exposed in the lower portion of the deep trench selective to the dielectric material and the buried oxide layer.

Abstract: A display panel and a display device are disclosed. The display panel includes a color filter substrate, a liquid crystal layer, and a thin film transistor array substrate. The color filter substrate includes a first protecting layer and a common electrode layer disposed thereon. The thin film transistor array substrate includes a second protecting layer and a pixel electrode disposed thereon. The common electrode layer is disposed corresponding to the pixel electrode. The liquid crystal layer includes one or more liquid crystal molecules, one or more first auxiliary alignment agent molecules, and one or more second auxiliary alignment agent molecules. The present invention can decrease occurrences of dark areas.

Abstract: The present invention provides a vertical alignment liquid crystal display and a manufacture method thereof.

Abstract: Isolated monoclonal antibodies are disclosed herein that specifically bind endoplasmin. In some embodiments these antibodies are fully human. Recombinant nucleic acids encoding these antibodies, expression vectors including these nucleic acids, and host cells transformed with these expression vectors are also disclosed herein. In several embodiments the disclosed antibodies are of use for detecting and/or treating tumors that express endoplasmin, such as melanoma, breast cancer, head and neck squamous cell carcinoma, renal cancer, lung cancer, glioma, bladder cancer, ovarian cancer or pancreatic cancer. In one example, the tumor is a melanoma.

Abstract: A multi-hop ad hoc communications network may allow optical communications between underwater nodes. Each node may be fitted with environmental sensors. Each node may collect data from the sensors and transmit the data to other nodes in the network according to a time division multiple access (TDMA) scheme. The data may propagate through a series of child and parent nodes to reach a master node. The master node may have a wired connection for power and data transfer.

Abstract: A liquid crystal display panel and a manufacturing method thereof are provided, which comprises a glass substrate provided with a color filter film or a dynamic flashing backlight module; a liquid crystal-polymer layer coated on the glass substrate; an upper polarizer and a lower polarizer respectively attached to the outer sides of the liquid crystal-polymer layer and the glass substrate. The liquid crystal display does not require the support of dual substrates, thereby improving transmittance, increasing light utilization, and being suitable for a device with an extremely rapid response, such as a device of field sequence display mode and so on.

Abstract: A gradient amplifier for driving a gradient coil is disclosed. The gradient amplifier includes a direct current (DC) bus for receiving DC voltage generated from a series resonant converter, an inverter coupled to the DC bus configured to receive the DC voltage at the DC bus and convert the DC voltage to generate an output voltage to be applied to the gradient coil, and an inverter controller coupled to the inverter. The inverter controller is configured to generate control signals to control operation of the inverter based at least on a DC voltage feedback signal measured at the DC bus, an output voltage feedback signal measured at the output of the inverter, and a reference output voltage signal indicative of a desired voltage to be achieved at the output of the inverter.

Abstract: At least one dielectric pad layer is formed on a semiconductor-on-insulator (SOI) substrate. A deep trench is formed in the SOI substrate, and a combination of an outer electrode, a node dielectric, and an inner electrode are formed such that the top surface of the inner electrode is recessed below the top surface of a buried insulator layer of the SOI substrate. Selective epitaxy is performed to fill a cavity overlying the inner electrode with an epitaxial semiconductor material portion. A top semiconductor material layer and the epitaxial semiconductor material portion are patterned to form a fin structure including a portion of the top semiconductor material layer and a portion of the epitaxial semiconductor material portion. The epitaxial semiconductor material portion functions as a conductive strap structure between the inner electrode and a semiconductor device to be formed on the fin structure.

Abstract: Systems and methods are provided for providing information associated with media contents are provided. The method comprises broadcasting a communication address associated with a playing device configured to play the media contents, the broadcasted communication address enables a user terminal device to communicate with the playing device; receiving, from the user terminal device, a request to acquire information associated with the media contents; determining an identifier associated with the information; and transmitting the identifier to the user terminal device. The identifier enables the user terminal device to acquire the information.

Abstract: Combinations of agents that have a synergistic effect for the treatment of a tumor are disclosed herein. These combinations of agents can be used to treat tumors, wherein the cells of the cancer express a mutated BRAF. Methods are disclosed for treating a subject diagnosed with a tumor that expresses a mutated BRAF. The methods include administering to the subject (1) a therapeutically effective amount of an antibody or antigen binding fragment thereof that specifically binds high molecular weight melanoma associated antigen (HMW-MAA), also known as CSPG4; and (2) a therapeutically effective amount of a BRAF inhibitor. In some embodiments, the tumor is melanoma. In some embodiments the method includes selecting a subject with primary or secondary resistance to a BRAF inhibitor. In further embodiments, treating the tumor comprises decreasing the metastasis of the tumor. In additional embodiments, the BRAF inhibitor comprises PLX4032 or PLX4720.

Abstract: Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface.

Abstract: A corkscrew assembly includes a housing a worm screw assembly, a first gripper, and a second gripper. The housing defines (i) a first opening configured to receive a neck of a bottle, (ii) a second opening, and (iii) an interior space interposed between the first opening and the second opening. The housing includes a sidewall extending from the first opening to the second opening. The sidewall defines a first gripper passage and a second gripper passage. The interior space is interposed between the first gripper passage and the second gripper passage. The worm screw assembly is rotatable in relation to the housing and includes (i) a worm screw member having a pointed first end portion and a second opposite end portion and (ii) a drive member fixed in relation to the second opposite end portion.

Abstract: A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.

Abstract: The present invention relates a technique of liquid crystal display, especially to an alignment film applied to a substrate of a liquid crystal display. The alignment film includes a plurality of alignment molecules formed by polymerizing monomers having at least a photosensitive group, and has formula e as wherein the component A and/or the component B in formula e comprise(s) terphenyl. The present invention further provides a method of fabricating the alignment film and a liquid crystal display using the same. Due to the photosensitive group of the monomers, the plurality of alignment molecules can be formed with an appropriated rate, and the alignment film formed thereby has homogeneity. Therefore, the optic quality and overall performance of the liquid crystal display are enhanced.

Abstract: Methods for treating cancer using a combination of an inhibitor of the sonic hedgehog signaling pathway (e.g., LDE225) with radiation and a tumor antigen-specific monoclonal antibody (e.g., heat shock protein (HSP) glucose regulated protein of 94000 daltons (Grp94)-specific mAb W9, or chondroitin sulfate proteoglycan 4 (CSPG4)-targeted mAbs), or with a BRAF inhibitor, e.g., in BRAF inhibitor resistant cancers.