Abstract: The present invention provides a composition of liquid crystal medium. The composition of liquid crystal medium includes a negative type liquid crystal material, a stabilizer, one or more than one type of polymerizable monomers capable of forming a polymerization under ultraviolent irradiation and a polymerizable photo-initiator; wherein a structural formula of the polymerizable monomers comprises at least one aromatic ring and at least a polymerizable group connected to the aromatic ring. In the composition of liquid crystal medium according to the present invention, a structural formula of the polymerizable monomers includes at least one aromatic ring and at least a polymerizable group connected to the aromatic ring, and a structural formula of the polymerizable photo-initiator includes a benzene ring or cyclohexane so as to provide a broader conjugate system than conventional photo-initiators.

Abstract: A method for regulating a power line voltage includes determining a slow voltage variation by filtering an actual voltage at terminals of the voltage regulation apparatus. A fast active power variation is determined by filtering a measured active power of the DG system; wherein a first frequency of the slow voltage variation is smaller than a second frequency of the fast active power variation. The voltage regulation apparatus settings are controlled based on the slow voltage variation and a reactive power output of the DG system is controlled based on fast active power variation.

Abstract: The present invention provides a color liquid crystal display panel, which includes: a plurality of layers of liquid crystal cells (2) that are arranged parallel to each other and bonding members (8) bonding the plurality of layers of liquid crystal cells (2). Each of the liquid crystal cells (2) includes a thin-film transistor substrate (20), a package substrate (30), and a dye-doped liquid crystal layer (40) sealed between the thin-film transistor substrate (20) and the package substrate (30). The dye-liquid crystal layer (40) includes a liquid crystal material, a dichroic dye, and a chiral reagent. The dichroic dye of each of the liquid crystal cells (2) absorbs light of a predetermined range of wavelength. The plurality of layers of liquid crystal cell (2) respectively absorbs lights of different ranges of wavelength.

Abstract: A complementary metal-oxide semiconductor (CMOS) structure includes a substrate and a P-type field effect transistor (FET) and an N-type FET disposed adjacent to one another on the substrate. Each FET includes a silicon-on-insulator (SOI) region, a gate electrode disposed on the SOI region, a source stressor, and a drain stressor disposed across from the source stressor relative to the gate electrode, wherein proximities of the source stressor and the drain stressor to a channel of a respective FET are substantially equal.

Abstract: Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface.

Abstract: The present invention provides a color liquid crystal display panel and a manufacturing method thereof. The color liquid crystal display panel includes: a first substrate (2), a second substrate (3), and dye-doped liquid crystal layers (4) hermetically sealed between the first substrate (2) and the second substrate (3). The dye-doped liquid crystal layers (4) each include a liquid crystal material, a chiral dopant, and at least one dichroic dye. Each of the dichroic dyes absorbs a light of a predetermined wavelength range.

Abstract: A golf club head is provided having a club body and a contact plate secured to the club body. The contact plate defines at least a portion of a striking surface having a plurality of striking surface grooves. The contact plate is formed using an electroforming process.

Abstract: Embodiments include a method comprising depositing a hard mask layer over a first layer, the hard mask layer including; lower hard mask layer, hard mask stop layer, and upper hard mask. The hard mask layer and the first layer are patterned and a spacer deposited on the patterned sidewall. The upper hard mask layer and top portion of the spacer are removed by selective etching with respect to the hard mask stop layer, the remaining spacer material extending to a first predetermined position on the sidewall. The hard mask stop layer is removed by selective etching with respect to the lower hard mask layer and spacer. The first hard mask layer and top portion of the spacer are removed by selectively etching the lower hard mask layer and the spacer with respect to the first layer, the remaining spacer material extending to a second predetermined position on the sidewall.

Abstract: An integrated FinFET and deep trench capacitor structure and methods of manufacture are disclosed. The method includes forming at least one deep trench capacitor in a silicon on insulator (SOI) substrate. The method further includes simultaneously forming polysilicon fins from material of the at least one deep trench capacitor and SOI fins from the SOI substrate. The method further includes forming an insulator layer on the polysilicon fins. The method further includes forming gate structures over the SOI fins and the insulator layer on the polysilicon fins.

Abstract: A power conversion system is presented. The system includes a power source coupled to a power converter and a controller. The controller is configured to determine a value of at least one parameter corresponding to the power source. Additionally, the controller is configured to provide a first portion of the at least one parameter to the power converter and modify an operating frequency of the power converter, duty ratio of the power converter, or a combination thereof. Furthermore, the controller is configured to obtain an electrical quantity at an output of the power converter based on the modified operating frequency, the modified duty ratio, or a combination thereof. Also, the controller is configured to deliver a combination of the electrical quantity obtained at the output of the power converter and a second portion of the at least one parameter to a load. Method for converting power is also presented.

Abstract: The present invention provides a mixture for liquid crystal medium and a liquid crystal display using the same. The mixture for liquid crystal medium comprises: at least one anisotropic liquid crystal material and a polymerizable monomer which will polymerize under UV irradiation. The weight percentage of the polymerizable monomer accounts for 0.1% to 1% of the total mixture for liquid crystal medium. In the mixture for liquid crystal medium and a liquid crystal display using the same according to the present invention, by using a polymerizable monomer which will polymerize under UV irradiation and the appropriate content ratio, the polymer bump with small size and good uniformity can be obtained within the mixture for liquid crystal medium after the polymerization, which avoids the bad liquid crystal alignment and the light spot occurred at the dark state of the liquid crystal panel, and then increases the response rapid of the liquid crystal panel to obtain high contrast ratio and stable mass production.

Abstract: A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.

Abstract: An integrated FinFET and deep trench capacitor structure and methods of manufacture are disclosed. The method includes forming at least one deep trench capacitor in a silicon on insulator (SOI) substrate. The method further includes simultaneously forming polysilicon fins from material of the at least one deep trench capacitor and SOI fins from the SOI substrate. The method further includes forming an insulator layer on the polysilicon fins. The method further includes forming gate structures over the SOI fins and the insulator layer on the polysilicon fins.

Abstract: The invention discloses a polymerizable mixture and a liquid crystal composition for polymer stabilized vertical alignment. The polymerizable mixture comprises one or more types of the reactive monomers and a photo initiator. structure of the reactive monomer comprises a single benzene ring, two benzene rings, or a naphthalene ring, wherein the two benzene rings are formed by direct connection of two single benzene rings or indirect connection with a substituent group therebetween, the benzene ring and the naphthalene ring are directly connected with at least one polymerizable group. The liquid crystal composition includes a negative type liquid crystal material, a stabilizer, and the polymerizable mixture. The reaction rate and the conversion rate of the reactive monomer can be improved by adding the photo initiator, so that the residues of the reactive monomers can be reduced after UV irradiation to solve the panel quality problems effectively.

Abstract: An exemplary power conversion system comprises an MPPT unit, a DC bus, a power converter, and a converter controller. The MPPT unit receives a feedback current signal and a feedback voltage signal from a power source and generates an MPPT reference signal based at least in part on the feedback current and voltage signals. The DC bus receives DC power from the power source. The power converter converts the DC power on the DC bus to AC power. The converter controller receives the MPPT reference signal from the MPPT unit and an output power feedback signal measured at an output of the power converter; generates control signals for AC power regulation and maximum power extraction based at least in part on the MPPT reference signal and the output power feedback signal; and sends the control signals to the power converter.

Abstract: Embodiments include a method comprising depositing a hard mask layer over a first layer, the hard mask layer including; lower hard mask layer, hard mask stop layer, and upper hard mask. The hard mask layer and the first layer are patterned and a spacer deposited on the patterned sidewall. The upper hard mask layer and top portion of the spacer are removed by selective etching with respect to the hard mask stop layer, the remaining spacer material extending to a first predetermined position on the sidewall. The hard mask stop layer is removed by selective etching with respect to the lower hard mask layer and spacer. The first hard mask layer and top portion of the spacer are removed by selectively etching the lower hard mask layer and the spacer with respect to the first layer, the remaining spacer material extending to a second predetermined position on the sidewall.

Abstract: The present invention provides a liquid crystal display device and a manufacturing method thereof. The liquid crystal display device includes a TFT substrate, a CF substrate opposite to and parallel with the TFT substrate, liquid crystal interposed between the TFT substrate and the CF substrate, spacers arranged between the TFT substrate and the CF substrate, and an enclosing resin frame arranged between the TFT substrate and the CF substrate and located along edges of the TFT substrate and the CF substrate. The TFT substrate and the CF substrate have inside surfaces that oppose the liquid crystal and are both provided with alignment layers. The alignment layers include flexible alignment films, which are in the form of thin membranes and are positioned on the inside surfaces of the TFT substrate and the CF substrate by being stuck thereto.

Abstract: A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.

Abstract: A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.

Abstract: A method for setting a pre-tilt angle of liquid crystal molecules includes (1) providing liquid crystal material, a CF substrate, and a TFT substrate; (2) arranging the substrates to form a gap therebetween in which the liquid crystal material is filled to form a liquid crystal cell; (3) providing a drive control circuit that generates driving voltages and connecting the drive control circuit to the TFT substrate; (4) providing a small-amplitude oscillation device and an irradiation intensity variable ultraviolet light source and positioning the liquid crystal cell on the oscillation device; (5) activating the oscillation device to cause the liquid crystal cell to make small-amplitude oscillation and conducting on the drive control circuit to supply driving voltages to drive the liquid crystal material, the ultraviolet light source being applied to irradiate the liquid crystal cell with ultraviolet lights of different intensities; and (6) repeating step (5) for at least one time.