Abstract: A CMOS FinFET device and a method of manufacturing the same using a three dimensional doping process is provided. The method of forming the CMOS FinFET includes forming fins on a first side and a second side of a structure and forming spacers of a dopant material having a first dopant type on the fins on the first side of the structure. The method further includes annealing the dopant material such that the first dopant type diffuses into the fins on the first side of the structure. The method further includes protecting the first dopant type from diffusing into the fins on the second side of the structure during the annealing.

Abstract: A processing system includes an interface for receiving application data at the processing system corresponding to an application, the application data including authentication data. A one-time programmable memory stores at least one application key. A processing module executes an operating system that includes a security routine to authenticate the application data based on the authentication data and the at least one application key. The security routine permits the execution of the application by the processing module when the authentication data is authenticated, and prevents the execution of the application by the processing system when the authentication data is not authenticated.

Abstract: A golf club head having a composite face insert attached to a metallic body is provided. The club head preferably has a volume of at least 200 cc and provides superior durability and club performance. The face insert includes prepreg plies having a fiber areal weight (FAW) of less than 100 g/m2. The face insert preferably has a thickness less than 4 mm and a mass at least 10 grams less than an insert of equivalent volume formed of the metallic material of the body of the club head. A metallic cap with a peripheral rim is also provided to protect the ends of the composite material of the face insert. Related methods of manufacturing and alternative materials are disclosed. The resin content of the prepreg plies can be controlled through management of the timing and environment in which the resultant prepreg plies are cured and soaked.

Abstract: A device for inspecting contraband in an aviation cargo container includes: a turntable and a scanning system, the scanning system including a radiation source; a detector; a radiation source mounting structure; and a detector mounting structure for mounting the detector. Each of said radiation source mounting structure and said detector mounting structure includes at least one column assembly. The radiation source and the detector are mounted on the column assembly and allowed to synchronously ascend and descend along said column assembly. By combining different movement modes of the turntable and the scanning system, the device of the present invention can scan the object in various scanning modes. The device is stable in structure, convenient in installation, and occupies a small space. The device can inspect aviation containers over two meters long and/or over two meters wide and achieve a relatively high passing rate of the objects.

Abstract: A proton-exchange composite includes a polymer matrix formed from a proton-exchange polymer and ionomer particles distributed therein. The polymer has side chains with ionic groups. The particles have an average particle size of less than 20 nm and include an oligomeric ionomer that interacts with the polymer and attracts the ionic groups on its side chains. The composite may be formed by a method in which an initiator is bonded to silica particulates. The initiator is used to initiate polymerization of a precursor monomer to form a salt form of the oligomeric ionomer bonded to the silica particulates, which is then reacted with an acid to produce the oligomeric ionomer, thus forming the ionomer particles. The ionomer particles are dispersed in a solution containing a solvent and the polymer dissolved therein. The solvent is removed. The residue is cured to form the composite.

Abstract: An oxynitride pad layer and a masking layer are formed on an ultrathin semiconductor-on-insulator substrate containing a top semiconductor layer comprising silicon. A first portion of a shallow trench is patterned in a top semiconductor layer by lithographic masking of an NFET region and an etch, in which exposed portions of the buried insulator layer is recessed and the top semiconductor layer is undercut. A thick thermal silicon oxide liner is formed on the exposed sidewalls and bottom peripheral surfaces of a PFET active area to apply a high laterally compressive stress. A second portion of the shallow trench is formed by lithographic masking of a PFET region including the PFET active area. A thin thermal silicon oxide or no thermal silicon oxide is formed on exposed sidewalls of the NFET active area, which is subjected to a low lateral compressive stress or no lateral compressive stress.

Abstract: A device for inspecting contraband in an aviation cargo containers includes: a turntable located at an object inspecting position and configured to carry the object to be inspected and bring the object into rotation; an object conveying system; a scanning system including a radiation source and a detector which can synchronously move in the vertical direction; a turntable drive/control system which drives and controls rotation of said turntable so that the turntable can continuously rotate about its rotation axis or rotate to any predetermined angular position; a scanning drive/control system which drives and controls the radiation source and the detector into synchronous movement in the vertical direction so that the radiation source and the detector can continuously move in the vertical direction or move to any predetermined vertical position. The device of the present invention can scan the object and form images in various scanning modes to meet different needs.

Abstract: An energy harvesting system and method. An array of cantilevers with PZT films is electrically connected to an energy harvesting device that converts vibration energy to electrical energy. An AC output signal provided by the cantilevers can be rectified to a DC output, thereby avoiding impairment in total electrical output. The DC output terminals can be connected in parallel and/or in series in order to achieve a higher voltage and/or a higher current that prevents the output from different cantilevers from counteracting one another. The connection circuitry includes one or more rectifying components integrated with one or more micro-cantilevers into a single integrated circuit chip. An oscillograph can be utilized to monitor the DC output voltage signal from an associated testing circuit.

Abstract: A process for making a MCSFET includes providing a first implant through a first side of an elongated stack, and then providing a second implant through a second side of the stack. The first implant has a dose different than the dose of the second implant, so that final dopant concentrations in the first and second sides differ and the transistor has two threshold voltages Vt1, Vt2.

Abstract: At least one gate dielectric, a gate electrode, and a gate cap dielectric are formed over at least one channel region of at least one semiconductor fin. A gate spacer is formed on the sidewalls of the gate electrode, exposing end portions of the fin on both sides of the gate electrode. The exposed portions of the semiconductor fin are vertically and laterally etched, thereby reducing the height and width of the at least one semiconductor fin in the end portions. Exposed portions of the insulator layer may also be recessed. A lattice-mismatched semiconductor material is grown on the remaining end portions of the at least one semiconductor fin by selective epitaxy with epitaxial registry with the at least one semiconductor fin. The lattice-mismatched material applies longitudinal stress along the channel of the finFET formed on the at least one semiconductor fin.

Abstract: Disclosed is an image reconstruction method in a high-energy dual-energy CT system. The method comprises steps of scanning an objection with high-energy dual-energy rays to obtain high-energy dual-energy projection values, calculating projection values of base material coefficients corresponding to the dual-energy projection values on the basis of a pre-created lookup table or by analytically solving a set of equations, and obtaining an image of base material coefficient distribution based on the projection values of base material coefficients. The method provides a solution for reconstruction with high-energy dual energy CT technology and thus a more effective approach for substance identification and contraband inspection, thereby bringing a significant improvement on accuracy and efficiency in security inspection.

Abstract: An oxynitride pad layer and a masking layer are formed on an ultrathin semiconductor-on-insulator substrate containing a top semiconductor layer comprising silicon. A first portion of a shallow trench is patterned in a top semiconductor layer by lithographic masking of an NFET region and an etch, in which exposed portions of the buried insulator layer is recessed and the top semiconductor layer is undercut. A thick thermal silicon oxide liner is formed on the exposed sidewalls and bottom peripheral surfaces of a PFET active area to apply a high laterally compressive stress. A second portion of the shallow trench is formed by lithographic masking of a PFET region including the PFET active area. A thin thermal silicon oxide or no thermal silicon oxide is formed on exposed sidewalls of the NFET active area, which is subjected to a low lateral compressive stress or no lateral compressive stress.

Abstract: A magnetic field effect sensor system having giant magneto-impedance elements. The elements may be elongated strips, and in proximity to and parallel with one another, and connected in series with connections or electrodes. The elements may have a regular shape without turns. They may have a single- or multi-layer structure. Some of the layers in the elements may contain a soft magnetic material, for instance, which form a closed loop for magnetic flux around a non-magnetic conductor.

Abstract: Eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer can be approximated by obtaining a known set of eigenvectors associated with a first section of a hypothetical profile of the structure, where the known set of eigenvectors is used to generate a simulated diffraction signal for the hypothetical profile. A known characteristic matrix associated with a second section of a hypothetical profile is obtained, and an approximated set of eigenvalues for the second section is determined based on the known set of eigenvectors associated with the first section and the known characteristic matrix associated with the second section.

Abstract: A method of generating a library of simulated-diffraction signals (simulated signals) of a periodic grating includes obtaining a measured-diffraction signal (measured signal). Hypothetical parameters are associated with a hypothetical profile. The hypothetical parameters are varied within a range to generate a set of hypothetical profiles. The range to vary the hypothetical parameters is adjusted based on the measured signal. A set of simulated signals is generated from the set of hypothetical profiles.

Abstract: The present invention provides peptide mimics for HLA class II antigens. The peptide mimics were identified by panning phage display peptide libraries with anti-HLA class II monoclonal antibodies. The peptide mimics inhibit the binding of an anti-HLA class II antigen antibody to HLA class II antigen positive cells and also elicit antibodies which can bind to HLA class II antigen positive cells. The identified peptide mimics can be used as immunogens for therapy of diseases related to cells expressing the HLA class II antigen, such as Non-Hodgkins Lymphoma.

Abstract: The profile of a single feature formed on a wafer can be determined by obtaining an optical signature of the single feature using a beam of light focused on the single feature. The obtained optical signature can then be compared to a set of simulated optical signatures, where each simulated optical signature corresponds to a hypothetical profile of the single feature and is modeled based on the hypothetical profile.

Abstract: The invention includes a method and a system for generating integrated circuit (IC) simulation information regarding the effect of design and fabrication process decisions. One embodiment includes creating and using a data store of profile-based information comprising metrology signal, structure profile data, process control parameters, and IC simulation attributes. Another embodiment includes creation and use of a simulation data store generated using test gratings that model the geometries of the IC interconnects. The interconnect simulation data store may be used in-line for monitoring electrical and thermal properties of an IC device during fabrication. Other embodiments include methods and systems for generating and using simulation data stores utilizing a metrology simulator and various combinations of a fabrication process simulator, a device simulator, and/or circuit simulator. Information from the simulation data store may be used in-line in-situ during the design or fabrication process steps.

Abstract: The invention provides a method of screening a library of candidate agents by contacting the library with a target in a reaction mixture under a condition of high stringency, wherein the target includes a tag that responds to a controllable force applied to the tag, and passing the members of the library through a microfluidic device in a manner that exposes the library members to the controllable force, thereby displacing members of the library that are bound to the target relative to their unbound counterparts. Kits and systems for use with the methods of the invention are also provided.

Abstract: Clubheads for iron-type golf clubs are disclosed. An example clubhead has a front including an iron-type face. The front is forged of a material such as C455 or 17-4 PH stainless steel. A heel, sole, toe, and top-line are situated rearwardly of the face, and a rear is situated rearwardly of the heel, sole, toe, and top-line. The face has one or more of: a COR of at least 0.8, a thickness, in a thinnest portion of the face, of no greater than 2.0 mm, and an area of less than 3000 mm2.