Abstract: The present invention provides a liquid crystal display device and a manufacturing method thereof. The liquid crystal display device includes a TFT substrate, a CF substrate opposite to and parallel with the TFT substrate, liquid crystal interposed between the TFT substrate and the CF substrate, spacers arranged between the TFT substrate and the CF substrate, and an enclosing resin frame arranged between the TFT substrate and the CF substrate and located along edges of the TFT substrate and the CF substrate. The TFT substrate and the CF substrate have inside surfaces that oppose the liquid crystal and are both provided with alignment layers. The alignment layers include flexible alignment films, which are in the form of thin membranes and are positioned on the inside surfaces of the TFT substrate and the CF substrate by being stuck thereto.

Abstract: SOI structures with silicon layers less than 20 nm thick are used to form ETSOI semiconductor devices. ETSOI devices are manufactured using a thin tungsten backgate encapsulated by thin nitride layers to prevent metal oxidation, the tungsten backgate being characterized by its low resistivity. The structure includes at least one FET having a gate stack formed by a high-K metal gate and a tungsten region superimposed thereon, the footprint of the gate stack utilizing the thin SOI layer as a channel. The SOI structure thus formed controls the Vt variation from the thin SOI thickness and dopants therein. The ETSOI high-K metal backgate fully depleted device in conjunction with the thin BOX provides an excellent short channel control and lowers the drain induced bias and sub-threshold swings. The structure supports the evidence of the stability of the wafer having a tungsten film during thermal processing, during STI and contact formation.

Abstract: The present invention provides a liquid crystal medium composition and a liquid crystal display using same. The liquid crystal medium composition includes a liquid crystal material, a stabilizer, and polymerizable monomers. The polymerizable monomers include at least two types of monomers, which include at least one highly reactive monomer and at least one strong anchoring monomer. The liquid crystal display includes upper and lower substrates that are arranged parallel to each other and a liquid crystal medium composition arranged between the upper and lower substrates. The liquid crystal medium composition includes two or more than two polymerizable monomers of different functionalities to mix in a reasonable manner so that balance can be reached among polymerization reaction rate, homogeneity of polymer formed thereby, and magnitude of anchoring force, all being of upgraded level. The optic quality and overall performance of a liquid crystal panel are enhanced.

Abstract: The present invention provides a liquid crystal medium composition, a liquid crystal display using same and a manufacturing method thereof. The liquid crystal medium composition includes a liquid crystal material, a polymerizable monomer, a stabilizer, and a sensitizer. The sensitizer shows strong absorbance of ultraviolet light having wavelength between 300-380 nm and is composed of a polycyclic aromatic hydrocarbon composed of a plurality of benzene rings linked with substituted moieties. The liquid crystal display includes: upper and a lower substrate that are arranged parallel to each other and the liquid crystal medium composition arranged between the upper and lower substrates.

Abstract: A power plant for providing alternating current (AC) power to an electrical grid is described. The power plant includes a first power converter couplable to the electrical grid at a first point of interconnection for receiving power from a first power source. The power plant also includes a second power converter couplable to the electrical grid at the first point of interconnection for receiving power from a second power source. The power plant also includes at least one sensor for measuring a voltage level at the first point of interconnection and a central controller for coordinating operation of the first power converter and the second power converter to determine an impedance of the electrical grid.

Abstract: Combinations of agents that have a synergistic effect for the treatment of a tumor are disclosed herein. These combinations of agents can be used to treat tumors, wherein the cells of the cancer express a mutated BRAF. Methods are disclosed for treating a subject diagnosed with a tumor that expresses a mutated BRAF. The methods include administering to the subject (1) a therapeutically effective amount of an antibody or antigen binding fragment thereof that specifically binds high molecular weight melanoma associated antigen (HMW-MAA), also known as CSPG4; and (2) a therapeutically effective amount of a BRAF inhibitor. In some embodiments, the tumor is melanoma. In some embodiments the method includes selecting a subject with primary or secondary resistance to a BRAF inhibitor. In further embodiments, treating the tumor comprises decreasing the metastasis of the tumor. In additional embodiments, the BRAF inhibitor comprises PLX4032 or PLX4720.

Abstract: Disclosed herein are isolated human monoclonal antibodies, and functional fragments thereof, that specifically bind HMW-MAA. Nucleic acids encoding these antibodies, expression vectors including these nucleic acid molecules, and isolated host cells that express the nucleic acid molecules are also disclosed. The antibodies can be used to detect HMW-MAA in a sample. Methods of diagnosing cancer, or confirming a diagnosis of cancer, are disclosed herein that utilize these antibodies. Methods of treating a subject with cancer are also disclosed.

Abstract: A power tool includes a housing that encloses a motor, and a collet configured to be driven to rotate by the motor. The collet defines a drill axis about which the collet is configured to rotate. The power tool also includes a sensor assembly having a front wall with a wall contact surface. The front wall includes a first wall portion and a second wall portion that define a gap therebetween. An object sensor is secured to the front wall proximate the gap. A support member includes a first end portion attached to the front wall and a second end portion attached to the housing. The support member extends from the housing to position the front wall forwardly of the collet such that the drill axis intersects the gap.

Abstract: Isolated monoclonal antibodies are disclosed herein that specifically bind endoplasmin. In some embodiments these antibodies are fully human. Recombinant nucleic acids encoding these antibodies, expression vectors including these nucleic acids, and host cells transformed with these expression vectors are also disclosed herein. In several embodiments the disclosed antibodies are of use for detecting and/or treating tumors that express endoplasmin, such as melanoma, breast cancer, head and neck squamous cell carcinoma, renal cancer, lung cancer, glioma, bladder cancer, ovarian cancer or pancreatic cancer. In one example, the tumor is a melanoma.

Abstract: It is disclosed herein that condroitin sulfate proteoglycan 4 (CSPG4), also known as high molecular weight melanoma associated antigen, is overexpressed on basal breast carcinoma cells (BBC), specifically triple negative basal breast carcinoma cells (TNBC). Methods for detecting basal breast cancer in a subject are disclosed. Methods are also disclosed for inhibiting the growth of a basal breast cancer cell. These methods include contacting the basal breast cancer cell with an effective amount of an antibody that specifically binds CSPG4. Additional treatment methods, and the use of antibody panels, are also described herein.

Abstract: Disclosed herein are isolated human monoclonal antibodies, and functional fragments thereof, that specifically bind HMW-MAA. Nucleic acids encoding these antibodies, expression vectors including these nucleic acid molecules, and isolated host cells that express the nucleic acid molecules are also disclosed. The antibodies can be used to detect HMW-MAA in a sample. Methods of diagnosing cancer, or confirming a diagnosis of cancer, are disclosed herein that utilize these antibodies. Methods of treating a subject with cancer are also disclosed.

Abstract: The present invention relates to a polarizer film peeling machine and a polarizer film peeling method thereof. The polarizer film peeling machine includes an operation platform and a conveyor device having a translatable surface. The operation platform forms a slit at a site where a polarizer film is peeled off. The translatable surface of the conveyor device is located under the slit. In peeling off a polarizer film, a glass substrate from which the polarizer film is to be removed is set to slide on the a top surface of the operation platform to pass through the slit and the peeled-off polarizer film is guided through the slit to be laid flat on the translatable surface of the conveyor device and move with the translatable surface of the conveyor device.

Abstract: Silicon-on-insulator (SOI) structures with silicon layers less than 20 nm thick are used to form extremely thin silicon-on-insulator (ETSOI) semiconductor devices. ETSOI devices are manufactured using a thin tungsten backgate encapsulated by thin nitride layers to prevent metal oxidation, the tungsten backgate being characterized by its low resistivity. The structure further includes at least one FET having a gate stack formed by a high-K metal gate and a tungsten region superimposed thereon, the footprint of the gate stack utilizing the thin SOI layer as a channel. The SOI structure thus formed controls the Vt variation from the thin SOI thickness and dopants therein. The ETSOI high-K metal backgate fully depleted device in conjunction with the thin BOX provides an excellent short channel control and significantly lowers the drain induced bias and sub-threshold swings.

Abstract: A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.

Abstract: The present invention provides an access method and a system for a Machine-Type Communication (MTC) device, and an MTC device. The method comprises the steps of: an MTC device sending, when performing channel request, a channel request cause value and a random reference value to a Base Station Subsystem (BSS) (100), and the BSS sending the received channel request cause value and random reference value back to the MTC device when completing channel allocation (101). The present invention distinguishes the MTC services from other non-MTC services through the channel request cause value, that is, when the cause values are different, the collision will not occur even if the random reference values are the same, thus reducing the probability of the random reference value collision, implementing the effective management for access operations of large numbers of MTC devices, and avoiding the influence of random reference value collision on the normal implementation of original services.

Abstract: The present invention discloses a method for implementing a handover in a local switch, and the method includes: a core network transmitting indication information to a source base station subsystem during any terminal of communication parties which carries out a local switch is performing a base station subsystem handover, and the source base station subsystem determining whether to transmit user-plane speech data received from a media gateway to the terminal which has not performed the base station subsystem handover, or to transmit the user-plane speech data received from an internal link to the terminal which has not performed the base station subsystem handover, according to the indication information. The present invention also discloses a system for implementing a handover in a local switch as well as a base station subsystem.

Abstract: Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface.

Abstract: Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface.

Abstract: A method for forming a field effect transistor includes forming a gate stack, a spacer adjacent to opposing sides of the gate stack, a silicide source region and a silicide drain region on opposing sides of the spacer, epitaxially growing silicon on the source region and the drain region; forming a liner layer on the gate stack and the spacer, removing a portion of the liner layer to expose a portion of the hardmask layer, removing the exposed portions of the hardmask layer to expose a silicon layer of the gate stack, removing exposed silicon to expose a portion of a metal layer of the gate stack, the source region, and the drain region; and depositing a conductive material on the metal layer of the gate stack, the silicide source region, and the silicide drain region.

Abstract: An exemplary power conversion system is disclosed including a DC bus for receiving DC power; a line side converter electrically coupled to the DC bus for converting the DC power to AC power; and a voltage source controller to provide control signals to enable the line side converter to regulate the AC power. The voltage source controller comprises a signal generator to generate the control signals based at least in part on a power command signal and a power feedback signal. The voltage source controller further comprises a current limiter to, during a transient event, limit the control signals based at least in part on an electrical current threshold. The voltage source controller further comprises a voltage limiter to, during the transient event, limit the control signals based at least in part on a DC bus voltage feedback signal and a DC boundary voltage threshold.