Abstract: An exemplary power conversion system comprises an MPPT unit, a DC bus, a power converter, and a converter controller. The MPPT unit receives a feedback current signal and a feedback voltage signal from a power source and generates an MPPT reference signal based at least in part on the feedback current and voltage signals. The DC bus receives DC power from the power source. The power converter converts the DC power on the DC bus to AC power. The converter controller receives the MPPT reference signal from the MPPT unit and an output power feedback signal measured at an output of the power converter; generates control signals for AC power regulation and maximum power extraction based at least in part on the MPPT reference signal and the output power feedback signal; and sends the control signals to the power converter.

Abstract: The present invention provides a method for implementing a handover in a local switch, and the method comprises: when one party Mobile Station of a call implementing a local switch mode performs a Base Station Subsystem handover, the Base Station Subsystem handover transmits uplink speech data of the Mobile Station which does not need to perform the handover on a local switch link of the Base Station Subsystem and a link between the Base Station Subsystem and a Media Gateway simultaneously. A Base Station Subsystem implementing a handover in a local switch is also provided by the present invention. The present invention can efficiently avoid the speech loss of the Mobile Station performing the handover during the handover, and guarantees that the Mobile Station which needs to perform the handover can receive the speech data of the other party user no matter the Mobile Station is in the original BSS or the target BSS, thus maintaining the call between the two Mobile Stations efficiently.

Abstract: The present invention discloses an enhanced base station, which includes a Um interface functional module (1), a base station functional module (2), a controller functional module (3), and an A interface functional module (4), wherein the Um interface functional module (1), the base station functional module (2) and the A interface functional module (4) carry out the function of a BTS, and the controller functional module (3) and the A interface functional module (4) carry out the function of a BSC. The present invention also provides a method and a GSM system for realizing a flat mobile communication, wherein the enhanced base station carries out the functions of a BTS and a BSC in a conventional GSM system. Application of the present invention can decrease the number of devices for constituting the GSM system and the number of forwarding devices between a calling MS and a called MS, therefore reduce the time for service data transmission and improve the reliability of the transmission.

Abstract: Embodiments of the invention relate to a power system for converting direct current (“DC”) power on a DC bus into alternating current (“AC”) power with a regulated voltage output and for feeding the AC power to an electrical system which may include a power utility or an electric grid, for example. A power conversion control system is used for controlling the power conversion and for maintaining the DC bus voltage (“DC voltage”) at a certain level.

Abstract: A field effect transistor device includes a gate stack disposed on a substrate a first contact portion disposed on a first distal end of the gate stack, a second contact portion disposed on a second distal end of the gate stack, the first contact portion disposed a distance (d) from the second contact portion, and a third contact portion having a width (w) disposed in a source region of the device, the distance (d) is greater than the width (w).

Abstract: Disclosed is an image reconstruction method in a high-energy dual-energy CT system. The method comprises steps of scanning an objection with high-energy dual-energy rays to obtain high-energy dual-energy projection values, calculating projection values of base material coefficients corresponding to the dual-energy projection values on the basis of a pre-created lookup table or by analytically solving a set of equations, and obtaining an image of base material coefficient distribution based on the projection values of base material coefficients. The method provides a solution for reconstruction with high-energy dual energy CT technology and thus a more effective approach for substance identification and contraband inspection, thereby bringing a significant improvement on accuracy and efficiency in security inspection.

Abstract: A method of forming a semiconductor device is provided, in which extension regions are formed atop the substrate in a vertical orientation. In one embodiment, the method includes providing a semiconductor substrate doped with a first conductivity dopant. Raised extension regions are formed on first portions of the semiconductor substrate that are separated by a second portion of the semiconductor substrate. The raised extension regions have a first concentration of a second conductivity dopant. Raised source regions and raised drain regions are formed on the raised extension regions. The raised source regions and the raised drain regions each have a second concentration of the second conductivity dopant, wherein the second concentration is greater than the first concentration. A gate structure is formed on the second portion of the semiconductor substrate.

Abstract: A magnetic field effect sensor system having giant magneto-impedance elements. The elements may be elongated strips, and in proximity to and parallel with one another, and connected in series with connections or electrodes. The elements may have a regular shape without turns. They may have a single- or multi-layer structure. Some of the layers in the elements may contain a soft magnetic material, for instance, which form a closed loop for magnetic flux around a non-magnetic conductor.

Abstract: A method for acquiring support capability of a mobile terminal by a base station side system is disclosed in the present disclosure, and the method includes: the base station side system applies a co-frequency interference to the mobile terminal, and detects a measurement report which is fed back by the mobile terminal after the co-frequency interference is applied, and determines and acquires the support capability of the mobile terminal for voice services over adaptive multi-user channels on one slot according to associated parameters in the detected measurement report in combination with associated threshold values. A system for acquiring support capability of the mobile terminal by the base station side system is also disclosed in the present disclosure.

Abstract: A complementary metal-oxide semiconductor (CMOS) structure includes a substrate and a P-type field effect transistor (FET) and an N-type FET disposed adjacent to one another on the substrate. Each FET includes a silicon-on-insulator (SOI) region, a gate electrode disposed on the SOI region, a source stressor, and a drain stressor disposed across from the source stressor relative to the gate electrode, wherein proximities of the source stressor and the drain stressor to a channel of a respective FET are substantially equal.

Abstract: A method for indicating a frame mapping way is provided, including: a network side notifying a mobile station of information of a SACCH frame mapping way used by the mobile station. An apparatus for indicating a frame mapping way is further provided, including a determination unit and a notification unit, wherein the determination unit is for determining a used SACCH frame mapping way for a mobile station; the notification unit is for notifying the mobile station of information of a SACCH frame mapping way used by the mobile station. With the invention, the network side can notify the mobile station of the information of which frame mapping way is used determined for the mobile station, thereby solving the problem that the mobile station does not know which frame mapping way is used, greatly improving the performance of the communication system after the mobile station uses the determined frame mapping way.

Abstract: A humidifier for adding humidity to an air stream of an HVAC system includes a housing configured to be mounted to a surface of an HVAC duct. A back side of the housing may be positioned adjacent to an opening in the surface of the HVAC duct, and the housing may be configured to hold a humidifier pad in an operating position. The housing may define a first air flow path from a first side of the humidifier pad to the opening in the surface of the HVAC duct when the housing is mounted to the surface of the HVAC duct. The housing may further define a second air flow path from a second side of the humidifier pad to a bypass aperture. At least part of the second air flow path may be defined by a bypass duct member. The bypass duct member may be field-reconfigurable between at least a first position resulting in the bypass aperture being located at a first location, and a second position resulting in the bypass aperture being located at a second location.

Abstract: A method for manufacturing a FinFET device includes: providing a substrate having a mask disposed thereon; covering portions of the mask to define a perimeter of a gate region; removing uncovered portions of the mask to expose the substrate; covering a part of the exposed substrate with another mask to define at least one fin region; forming the at least one fin and the gate region through both masks and the substrate, the gate region having side walls; disposing insulating layers around the at least one fin and onto the side walls; disposing a conductive material into the gate region and onto the insulating layers to form a gate electrode, and then forming source and drain regions.

Abstract: Combinations of agents that have a synergistic effect for the treatment of a tumor are disclosed herein. These combinations of agents can be used to treat tumors, wherein the cells of the cancer express a mutated BRAF. Methods are disclosed for treating a subject diagnosed with a tumor that expresses a mutated BRAF. The methods include administering to the subject (1) a therapeutically effective amount of an antibody or antigen binding fragment thereof that specifically binds glucose regulated protein (GRP) 94; and (2) a therapeutically effective amount of a BRAF inhibitor. In some embodiments, the tumor is melanoma. In some embodiments the method includes selecting a subject with primary or secondary resistance to a BRAF inhibitor. In further embodiments, treating the tumor comprises decreasing the metastasis of the tumor. In additional embodiments, the BRAF inhibitor comprises PLX4032 or PLX4720.

Abstract: The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor substrate, the gate structure including a gate stack and spacers adjacent to sidewalls of the gate stack, and having a first side and a second side opposite to the first side; performing angled ion-implantation from the first side of the gate structure in the substrate, thereby forming an ion-implanted region adjacent to the first side, wherein the gate structure prevents the angled ion-implantation from reaching the substrate adjacent to the second side of the gate structure; and performing epitaxial growth on the substrate at the first and second sides of the gate structure. As a result, epitaxial growth on the ion-implanted region is much slower than a region experiencing no ion-implantation.

Abstract: Isolated monoclonal antibodies are disclosed herein that specifically bind endoplasmin. In some embodiments these antibodies are fully human. Recombinant nucleic acids encoding these antibodies, expression vectors including these nucleic acids, and host cells transformed with these expression vectors are also disclosed herein. In several embodiments the disclosed antibodies are of use for detecting and/or treating tumors that express endoplasmin, such as melanoma, breast cancer, head and neck squamous cell carcinoma, renal cancer, lung cancer, glioma, bladder cancer, ovarian cancer or pancreatic cancer. In one example, the tumor is a melanoma.

Abstract: A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.

Abstract: The present invention discloses an enhanced base station, which includes a Um interface functional module (1), a base station functional module (2), a controller functional module (3), and an A interface functional module (4), wherein the Um interface functional module (1), the base station functional module (2) and the A interface functional module (4) carry out the function of a BTS, and the controller functional module (3) and the A interface functional module (4) carry out the function of a BSC. The present invention also provides a method and a GSM system for realizing a flat mobile communication, wherein the enhanced base station carries out the functions of a BTS and a BSC in a conventional GSM system. Application of the present invention can decrease the number of devices for constituting the GSM system and the number of forwarding devices between a calling MS and a called MS, therefore reduce the time for service data transmission and improve the reliability of the transmission.

Abstract: A process for preparing mist, which includes micro/nano solids or liquids, and a process for forming new materials by mist gas discharge, and also an apparatus for forming new materials. The advantages are: as compared to common gases, mists exhibit broader selection range of elements and compounds and broader range of suitable temperature and pressure. Due to the presence of mist AI(m), in a sealed container, the concentration of A in unit volume of mist is far higher than the concentration of A in unit volume of gas. Under specific conditions, the physical/chemical reactions can be carried out more easily, and new materials can be formed with higher efficiency.

Abstract: A method of fabricating and a structure of a merged multi-fin finFET. The method includes forming single-crystal silicon fins from the silicon layer of an SOI substrate having a very thin buried oxide layer and merging the end regions of the fins by growing vertical epitaxial silicon from the substrate and horizontal epitaxial silicon from ends of the fins such that vertical epitaxial silicon growth predominates.