Abstract: Disclosed are methods of, and assay and kits for, detecting and diagnosing methods of detecting, diagnosing, vulnerable carotid artery disease capable of becoming acutely symptomatic using the levels of Resolvin D1 (RvD1), docosahexaenoic acid (DHA), and arachidonic acid (AA). Also disclosed are methods of treating carotid artery disease and methods of identifying agents for use in the treatment of carotid artery disease.

Abstract: Feature descriptor matching described herein may include receiving a first input image and a second input image. A feature detector may detect features from the first and second input images. A descriptor extractor may learn local feature descriptors from the features of the first and second input images based on a feature descriptor matching model trained using a ground truth data set. The descriptor extractor may determine a listwise mean average precision (mAP) rank of a pool of candidate image patches from the second input image with respect to a queried image patch from the first input image based on the feature descriptor matching model, the first set of local feature descriptors, and the second set of local feature descriptors. The descriptor matcher may generate a geometric transformation between the first input image and the second input image based on the listwise mAP and a convolutional neural network.

Abstract: A duodenum built-in jejunum cannula releasing system and a use method therefor, the system including: implanting device, pushing assembly, fixing line and releasing line. The implanting device includes storage pipe shell, releaser, membrane pipe and stent; the storage pipe shell is tubular and provided with near-end opening and far-end opening; the membrane pipe and the stent which are to be released are arranged in the storage pipe shell in folded state; the pushing assembly includes push-pull guiding wire, inner pipe, middle pipe and outer pipe which are sleeved with one another from the inside out in sequence and may move relative to one another.

Abstract: The present disclosure provides a compound having a formula (I): wherein Cy represents substituted or unsubstituted C5-C40 aryl; X represents oxygen atom or sulfur atom; L1 is selected from substituted or unsubstituted C5-C40 aryl, or substituted or unsubstituted C3-C40 heteroaryl; A includes a structure represented by formula (II): wherein each of L2 and L3 is independently selected from substituted or unsubstituted C5-C40 aryl, or substituted or unsubstituted C3-C40 heteroaryl; each of Ar1, Ar2, and Ar3 is independently selected from substituted or unsubstituted C5-C40 aryl, substituted or unsubstituted C3-C40 heteroaryl, or substituted or unsubstituted arylamine containing one or two nitrogen atoms; each of m, q, and r is independently selected from 0 or 1; and * indicates a connection position.

Abstract: A proxy-based thin-client web browsing framework enables cooperative web browsing of multiple devices. The multiple devices may include devices that are not intended for web browsing and have limited or no web browsers and/or user input capabilities. The proxy-based thin client web browsing framework employs a virtual browser at a proxy server to perform all browser-engine logics, and retrieve, render and encode web pages on behalf of the multiple devices. The multiple devices therefore only need to have limited decoding and display capabilities to perform web browsing. The proxy-based thin client web browsing framework further includes a touch controller as a remote controller for a device that has no or limited user texting or manipulating capabilities.

Abstract: A semiconductor device includes a substrate, a gate disposed over the substrate, a source/drain disposed in the substrate at two sides of the gate, and an insulating layer disposed over sidewalls of the gate and at least a portion of a surface of the source/drain. In some embodiments, the insulating layer includes a first side facing the gate or the source, and includes a second side opposite to the first side. The insulating layer includes dopants, and a concentration of the dopants is reduced from the second side to the first side of the insulating layer.

Abstract: Embodiments include Multiple Gate Field-Effect Transistors (MuGFETs) and methods of forming them. In an embodiment, a structure includes a substrate, a fin, masking dielectric layer portions, and a raised epitaxial lightly doped source/drain (LDD) region. The substrate includes the fin. The masking dielectric layer portions are along sidewalls of the fin. An upper portion of the fin protrudes from the masking dielectric layer portions. A first spacer is along a sidewall of a gate structure over a channel region of the fin. A second spacer is along the first spacer. The raised epitaxial LDD region is on the upper portion of the fin, and the raised epitaxial LDD region adjoins a sidewall of the first spacer and is disposed under the second spacer. The raised epitaxial LDD region extends from the upper portion of the fin in at least two laterally opposed directions and a vertical direction.

Abstract: A gastric diverter and a digestive tract support and a release method thereof. The digestive tract support has undeployed shape and deployed shape, and includes upper support, lower support and connecting member. In the deployed shape, a first opening is provided at top of the upper support, a second opening is provided at bottom thereof, and the lower support is disposed below the upper support; a third opening is provided at top of the lower support, a fourth opening is provided at bottom thereof, and the upper support and the lower support are connected by a plurality of connecting members; the fourth opening of the lower support is connected to a membrane tube, the deployed upper support and lower support both cannot pass through an open gastric pyloric orifice, and the connecting members can pass through the gastric pyloric orifice or be placed at the gastric pyloric orifice.

Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.

Abstract: A method for forming a semiconductor device comprises receiving a structure having a substrate, an isolation structure over the substrate, and a fin over the substrate and adjacent to the isolation structure. The method further includes etching a portion of the fin, resulting in a trench, forming a doped material layer over bottom and sidewalls of the trench, and growing at least one epitaxial layer over the doped material layer in the trench. The method further includes recessing the isolation structure and the doped material layer, leaving a first portion of the at least one epitaxial layer surrounded by the doped material layer and performing an annealing process, thereby driving dopants from the doped material layer into the first portion.

Abstract: Provided are a compound represented by formula 1, a display panel and display apparatus. In formula 1, L1-L5 are each a linking group independently selected from the group consisting of a single bond, C1-C10 alkylene, C6-C30 arylene, C6-C30 fused arylene, C4-C30 heteroarylene, and C4-C30 fused heteroarylene; R1-R5 are each independently selected from the group consisting of hydrogen, aryl and heteroaryl; and a, b, c, d, and e are each independently 0, 1, 2, or 3. The compound has a spirane structure containing a boron heterocyclic ring and can be used as a light-emitting host material of OLEDs. By introducing the bipolar host material into the OLED, charge transfer balance is beneficially balanced in the light-emitting layer, which broadens exciton recombination region, simplifies device structure, and improves device efficiency.

Abstract: An apparatus includes a first source and a common drain and on opposite sides of a first gate surrounded by a first gate spacer, a second source and the common drain on opposite sides of a second gate surrounded by a second gate spacer, a first protection layer formed along a sidewall of the first gate spacer, wherein a top surface of the first protection layer has a first slope, a second protection layer formed along a sidewall of the second gate spacer, wherein a top surface of the second protection layer has a second slope, a lower drain contact between the first gate and the second gate and an upper drain contact over the lower drain contact and between the first gate and the second gate, wherein at least a portion of the upper drain contact is in contact with the first slope and the second slope.

Abstract: Provided are a boron-silicon heterocyclic compound having a structure represented by formula 1, a display device and a display apparatus. In formula 1, L1 and L2 are each a single bond, C6-C30 arylene, C6-C30 fused arylene, C4-C30 heteroarylene, or C4-C30 fused heteroarylene; D1 and D2 are each a substituted or unsubstituted C6-C60 aryl, a substituted or unsubstituted C4-C60 heteroaryl, a substituted or unsubstituted C10-C60 fused aryl, a substituted or unsubstituted C8-C30 fused heteroaryl, or a substituted or unsubstituted diphenylamino. The compound has a strong inductive effect and can reduce the driving voltage of the device. The silacyclopentadiene having a silicon atom as spiro-atom can effectively improve the solubility of the material, which is beneficial to the cleaning of the vapor deposition mask. In addition, the compound has a higher triplet energy level to effectively transfer energy to the luminous body, and improves the efficiency of the device.

Abstract: Representative methods of manufacturing memory devices include forming a transistor with a gate disposed over a workpiece, and forming an erase gate with a tip portion extending towards the workpiece. The transistor includes a source region and a drain region disposed in the workpiece proximate the gate. The erase gate is coupled to the gate of the transistor.

Abstract: A display panel includes a light-emitting element and a capping layer disposed at a light exit side of the light-emitting element. The light-emitting element includes a first light-emitting element, a second light-emitting element and a third light-emitting element emitting a first color light, a second color light and a third color light, respectively. The capping layer includes a first capping layer and a second capping layer stacked together. The second capping layer includes a first sub-capping layer, a second sub-capping layer and a third sub-capping layer correspondingly disposed at light exit sides of the first light-emitting element, the second light-emitting element and the third light-emitting element, respectively. At least one of the first sub-capping layer, the second sub-capping layer, or the third sub-capping layers is configured to have a larger refractive index of light emitted by the corresponding light-emitting element than light emitted by other light-emitting elements.

Abstract: The present disclosure relates to the field of OLED technologies, and provides a light-emitting host material including an adamantane structure, and having a structure represented by Formula (I). L1 and L2 are each independently selected from a single bond, phenyl, naphthyl or the like. The electron donor D is selected from carbazolyl and its derivative groups, diphenylamino and its derivative groups, or acridinyl and its derivative groups. The electron acceptor A is mainly selected from a nitrogen-containing heterocyclic substituent, a cyano-containing substituent, a triarylboron-based substituent. The D-(?)-?-(?)-A structure in the compound has a bipolar property, and the intermediate ? bond can effectively interrupt the intramolecular charge transmission between the electron donor D and the electron acceptor A. The compound is used as a host material of the light-emitting layer in an OLED to reduce the efficiency roll-off of the blue light material, and enhance luminance and efficiency.

Abstract: The present disclosure belongs to the technical field of organic light-emitting diods (OLEDs), and provides a compound used as an electron transmission material of OLEDs. Molecules of the compounds include an aromatic ring (or aromatic fused ring) and a phenanthroline group that are connected to each other. In an embodiment, the compound according to the present disclosure includes two types of groups, i.e., an aromatic ring (or aromatic fused ring) and a phenanthroline (or benzoquinoline) group. These two groups not only have good electron accepting ability, but also can be well doped with metals. The planarity of the two groups is conducive to the stacking of molecules, which facilitates the combination of holes and electrons and generates excitons, thereby increasing the electron mobility of the material and improving efficiency of device.

Abstract: Embodiments include Multiple Gate Field-Effect Transistors (MuGFETs) and methods of forming them. In an embodiment, a structure includes a substrate, a fin, masking dielectric layer portions, and a raised epitaxial lightly doped source/drain (LDD) region. The substrate includes the fin. The masking dielectric layer portions are along sidewalls of the fin. An upper portion of the fin protrudes from the masking dielectric layer portions. A first spacer is along a sidewall of a gate structure over a channel region of the fin. A second spacer is along the first spacer. The raised epitaxial LDD region is on the upper portion of the fin, and the raised epitaxial LDD region adjoins a sidewall of the first spacer and is disposed under the second spacer. The raised epitaxial LDD region extends from the upper portion of the fin in at least two laterally opposed directions and a vertical direction.

Abstract: A semiconductor device includes a substrate, an isolation structure over the substrate, and a first semiconductor layer over the substrate. At least a portion of the first semiconductor layer is surrounded by the isolation structure. The semiconductor device further includes a doped material layer between the isolation structure and the first semiconductor layer.

Abstract: In implementations of the subject matter described herein, there are provided a method and apparatus for real time screen sharing. During the screen sharing of two devices, if a certain condition is satisfied for an image encoded by a first device and an image decoded by a second device, the first device pauses image processing images. If the pause time of pausing satisfies a certain length, a parameter associated with an image compression ratio is adjusted. After the first device resumes image processing, the adjusted parameter is used to encode a new image captured on the first device. According to implementations of the subject matter described herein, a transmission code rate during the screen sharing can be controlled according to the pause time of pausing image processing. The implementations of the subject matter described herein can reduce transmission latency of screen sharing, thereby effectively ensuring the user experience.