Abstract: An external mechanism for an endoscope includes: a bending wheel configured to engage with a second UD knob of a second bending operation device provided in an operation portion of an endoscope; a motor portion configured to generate a driving force for rotating the bending wheel; a housing case housing the bending wheel and the motor portion and detachably attached to the operation portion, and an operation switch arranged outside the housing case and configured to output a control signal to the motor portion due to the operating element being operated, in which the operation switch is pivotally supported by the rotation shaft and rotates with respect to the housing case.

Abstract: An external mechanism for endoscope includes a bending wheel, a motor, a housing case, a case detachably fixing member, and a mounting restricting member obstructing mounting of a housing case on a sub operation section by interfering with a second bending upward and downward fixing lever in a state where the second bending upward and downward fixing lever is at a position other than a release position.

Abstract: A drift layer is formed over a semiconductor substrate which is an SiC substrate. The drift layer includes first to third n-type semiconductor layers and a p-type impurity region. Herein, an impurity concentration of the second n-type semiconductor layer is higher than an impurity concentration of the first n-type semiconductor layer and an impurity concentration of the third n-type semiconductor layer. Also, in plan view, the second semiconductor layer located between the p-type impurity regions adjacent to each other overlaps with at least a part of a gate electrode formed in a trench.

Abstract: In a semiconductor device in a wafer state, an element region and a scribe region are defined in one main surface of a semiconductor substrate. In the element region, a vertical MOS transistor is formed as a semiconductor element. In the scribe region, an n-type column region and a p-type column region are defined. An n-type column resistor is formed in the n-type column region. A p-type column resistor is formed in the p-type column region.

Abstract: The present technology relates to a distance measurement sensor, a signal processing method, and a distance measurement module that make it possible to detect that an object to be measured is a specular reflector. The distance measurement sensor includes a signal processing unit that calculates a distance to an object and a degree of confidence, from a signal obtained by a light receiving unit that receives reflected light that is returned light obtained by reflecting irradiation light emitted from a predetermined light emitting source by the object, and outputs a determination flag determining whether the object that is an object to be measured is a specular reflector having a high reflectance. The present technology can be applied to, for example, a distance measurement module that measures a distance to a subject, and the like.

Abstract: To improve an on-resistance of a semiconductor device. A plurality of collector regions are formed at a predetermined interval on a bottom surface of a drift layer made of SiC. Next, on the bottom surface of the drift layer, both of the drift layer and a collector region via a silicide layer are connected to a collector electrode.

Abstract: An external mechanism for endoscope includes a wheel configured to be engaged with a second bending operation up and down knob of a second bending operation apparatus provided in an operation portion of an endoscope, a motor configured to generate driving force for rotating the wheel, an operation switch configured to output a driving control signal for the motor, a container case that contains the wheel and the motor, a case attachment and detachment fixation member with which the container case can be attached to and detached from the operation portion, and a switch case attached to the container case and configured to be able to turn between a first position that covers a part of the operation portion and a second position away from the first position.

Abstract: An external mechanism for endoscope includes a wheel engaged with a second bending operation up and down knob of a second bending operation apparatus provided in an operation portion of an endoscope, a motor configured to generate driving force for rotating the wheel, an operation switch for outputting a driving control signal to the motor, a container case containing the wheel and the motor, a case attachment and detachment fixation member with which the container case can be attached to and detached from the operation portion, a switch case attached to the container case and configured to be able to turn between a first position covering a part of the operation portion and a second position away from the first position, and a dummy switch provided in the switch case and configured to operate a remote switch arranged in the operation portion in the first position via the switch case.

Abstract: A distance measuring device of the present disclosure includes: a light source that irradiates a subject with light; a light detection unit that receives reflected light from the subject based on irradiation light from the light source; and a control unit that performs exposure control according to a distance between the distance measuring device and the subject. Furthermore, an electronic device of the present disclosure includes the distance measuring device having the configuration described above.

Abstract: In a Schottky barrier diode region, a Schottky barrier diode is formed between an n-type drift layer and a metal layer, and in a body diode region, a p-type semiconductor region, a p-type semiconductor region, and a p-type semiconductor region are formed in order from a main surface side in the drift layer, and a body diode is formed between the p-type semiconductor region and the drift layer. An impurity concentration of the p-type semiconductor region is decreased lower than the impurity concentration of the p-type semiconductor regions, thereby increasing the reflux current flowing through the Schottky barrier diode and preventing the reflux current from flowing through the body diode.

Abstract: An endoscope includes an insertion portion, an operation portion, a power transmission unit, a power relay unit, a power generation unit configured to apply power to the power relay unit in a second power transmission shaft direction which is non-parallel to a first power transmission shaft direction, an elastic member configured to perform either one of urging the power relay unit against the power generation unit or urging the power generation unit against the power relay unit, and a cable configured to extend from the operation portion in the second power transmission shaft direction which is a direction different from a longitudinal direction, wherein the power generation device is attached such that the power generation device is disposed to extend in an extending direction of the cable after being mounted.

Abstract: The object of the present invention is to make it possible to maintain a stable electric discharge and to achieve a stable quality and machining performance even when a work having a non-uniform composition is machined. A wire electric discharge machining device performs electric discharge machining on a work while controlling an inter-electrode distance between a wire and the work based on an inter-electrode voltage between the wire and the work so as to match a set target voltage. The wire electric discharge machining device includes an inter-electrode voltage measuring unit that measures the inter-electrode voltage, an actual amplitude calculating unit that calculates an amplitude of the measured inter-electrode voltage, and a target voltage correcting unit that corrects the target voltage in such a way that the calculated amplitude approaches the target amplitude that is set to a value larger than zero.

Abstract: To improve characteristics of a semiconductor device. A first p-type semiconductor region having an impurity of a conductivity type opposite from that of a drift layer is arranged in the drift layer below a trench, and a second p-type semiconductor region is further arranged that is spaced at a distance from a region where the trench is formed as seen from above and that has the impurity of the conductivity type opposite from that of the drift layer. The second p-type semiconductor region is configured by a plurality of regions arranged at a space in a Y direction (depth direction in the drawings). Thus, it is possible to reduce the specific on-resistance while maintaining the breakdown voltage of the gate insulating film by providing the first and second p-type semiconductor regions and further by arranging the second p-type semiconductor region spaced by the space.

Abstract: An endoscope includes an insertion portion, an operation portion, a knob protruding from the operation portion to a first side in a direction intersecting a longitudinal direction, a universal cord protruding to a second side in the direction, and a power unit provided in a housing portion disposed on the operation portion on the second side so as not to stick out to the first side with respect to a center axis.

Abstract: An external mechanism for endoscope includes: an abutment surface that is a first surface configured to cover a knob arranging surface at which a second bending operation knob is arranged in an operation portion of an endoscope; a wheel configured to engage with the second bending operation knob arranged at the knob arranging surface; a motor configured to generate a driving force for rotating the wheel; a housing case that houses the wheel and the motor; a case attaching/detaching and fixing section for detachably attaching the housing case to the operation portion of the endoscope; and a locking member provided at the housing case and configured to be locked on the knob arranging surface of the endoscope and a large-diameter portion end face adjacent to the knob arranging surface in the operation portion of the endoscope.

Abstract: To improve an on-resistance of a semiconductor device. A plurality of collector regions are formed at a predetermined interval on a bottom surface of a drift layer made of SiC. Next, on the bottom surface of the drift layer, both of the drift layer and a collector region via a silicide layer are connected to a collector electrode.

Abstract: In a Schottky barrier diode region, a Schottky barrier diode is formed between an n-type drift layer and a metal layer, and in a body diode region, a p-type semiconductor region, a p-type semiconductor region, and a p-type semiconductor region are formed in order from a main surface side in the drift layer, and a body diode is formed between the p-type semiconductor region and the drift layer. An impurity concentration of the p-type semiconductor region is decreased lower than the impurity concentration of the p-type semiconductor regions, thereby increasing the reflux current flowing through the Schottky barrier diode and preventing the reflux current from flowing through the body diode.

Abstract: An external mechanism for an endoscope includes: a bending wheel configured to engage with a second UD knob of a second bending operation device provided in an operation portion of an endoscope; a motor portion configured to generate a driving force for rotating the bending wheel; a housing case housing the bending wheel and the motor portion and detachably attached to the operation portion, and an operation switch arranged outside the housing case and configured to output a control signal to the motor portion due to the operating element being operated, in which the operation switch is pivotally supported by the rotation shaft and rotates with respect to the housing case.

Abstract: An external mechanism for endoscope includes: an abutment surface that is a first surface configured to cover a knob arranging surface at which a second bending operation knob is arranged in an operation portion of an endoscope; a wheel configured to engage with the second bending operation knob arranged at the knob arranging surface; a motor configured to generate a driving force for rotating the wheel; a housing case that houses the wheel and the motor; a case attaching/detaching and fixing section for detachably attaching the housing case to the operation portion of the endoscope; and a locking member provided at the housing case and configured to be locked on the knob arranging surface of the endoscope and a large-diameter portion end face adjacent to the knob arranging surface in the operation portion of the endoscope.

Abstract: Semiconductor device has a cell region and a peripheral region, and has a drift layer, a trench, an gate dielectric film on an inner wall of the trench, a gate electrode, and a p-type first semiconductor region below the trench in the cell region on a semiconductor substrate. Further, in the peripheral region on the semiconductor substrate, p-type second semiconductor region is formed in the same layer as the p-type first semiconductor region. a width of the p-type first semiconductor region and a width of the p-type second semiconductor region are different.