Patents by Inventor Yasuhiro Okamoto

Yasuhiro Okamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10787345
    Abstract: A crane is disclosed, the crane includes detachable hydraulic cylinder including a head side oil chamber and a rod side oil chamber both to be connected to a control valve through a joint, in which a head side hydraulic detecting section and a rod side hydraulic detecting section are each provided to the hydraulic cylinder, and a connection state between the hydraulic cylinder and the control valve is determined based on a head side hydraulic pressure and a rod side hydraulic pressure in a period until a predetermined time elapses after supply of electric power to the head side hydraulic detecting section and the rod side hydraulic detecting section is started and an operation tool for hydraulic cylinder switches the control valve to a state of supplying hydraulic fluid to the hydraulic cylinder.
    Type: Grant
    Filed: April 7, 2017
    Date of Patent: September 29, 2020
    Assignee: TADANO LTD.
    Inventors: Toshihiko Okamoto, Yasuhiro Maeda, Naoto Kawabuchi
  • Patent number: 10780675
    Abstract: This invention provides a gas barrier film, which can suppress blocking and winding deviation, and an optical film using the gas barrier film. The gas barrier film includes a flexible substrate and an inorganic thin film layer formed on at least one surface of the flexible substrate. A static friction coefficient between one surface of the gas barrier film and the other surface is not less than 0.85 and not more than 2.0, and when a 50 mm-square portion cut from the gas barrier film is placed on a horizontal surface such that a central portion of the 50 mm-square portion is in contact with the horizontal surface, an average value of distances from the horizontal surface to four corners of the 50 mm-square portion is not more than 2 mm.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: September 22, 2020
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Toshiyuki Ueno, Yasuhiro Yamashita, Mitsunori Nodono, Satoshi Okamoto
  • Patent number: 10736493
    Abstract: An insertion device includes a shape-variable tube elastically returning while the shape-variable tube bends at a tube bending radius of a tube radius boundary value or more, and a shaft rotating around a shaft axis inside the shape-variable tube so that the shaft transmits a driving force to drive a motion section from a first extending direction toward a second extending direction. The shaft elastically returns while the shaft bends at a shaft bending radius of a shaft radius boundary value or more, and rotates without being deformed while the elastic return is impossible when the shape-variable tube bends in an elastically returnable range.
    Type: Grant
    Filed: February 5, 2016
    Date of Patent: August 11, 2020
    Assignee: OLYMPUS CORPORATION
    Inventor: Yasuhiro Okamoto
  • Patent number: 10728211
    Abstract: Provided is an electronic apparatus that possibly registers a domain name, an IP address, and identification information on the electronic apparatus itself with a DNS server, which includes a communication unit and a processing unit. When the domain name of the electronic apparatus is registered with the DNS server, the processing unit makes an acquisition request for identification information that is associated with the domain name of the electronic apparatus. In a case where the acquired identification information is not the same as the identification information on the electronic apparatus, the processing unit changes the domain name, and performs processing that registers the IP address and the identification information with the DNS server in a state of being associated with a post-change domain name.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: July 28, 2020
    Assignee: Seiko Epson Corporation
    Inventors: Yasuhiro Furuta, Toshiatsu Okamoto, Tomohiro Takahashi
  • Publication number: 20200171789
    Abstract: Provided are a melt blown (MB) nonwoven fabric, a laminate using the same, a method of producing a melt blown nonwoven fabric as well as a melt blowing apparatus. A melt blowing apparatus 100 includes a die 10 configured to discharge a resin melt 42 with an accompanying jet to give fiber materials, a hollow cover 20, and a collector 60. The fiber materials 50 from the die 10 are heated to a temperature equal to or higher than a crystallization temperature of crystalline thermoplastic resin inside the hollow cover 20 and collected on a collecting surface 62 of the collector 60. The hollow cover 20 and the collector 60 are separated by a distance of 5 cm or longer between a lower edge 28 of the hollow cover 20 and the collecting surface 62 in a line extending downwardly from the nozzle holes 12 in a vertical direction.
    Type: Application
    Filed: February 7, 2020
    Publication date: June 4, 2020
    Applicant: KURARAY CO., LTD.
    Inventors: Tetsuya OKAMOTO, Yasuhiro SHIROTANI
  • Publication number: 20200161445
    Abstract: An n-type epitaxial layer is formed on an n-type semiconductor substrate made of silicon carbide. p-type body regions are formed in the epitaxial layer, and n-type source region is formed in the body region. On the body region between the source region and the epitaxial layer, a gate electrode is formed via a gate dielectric film, and an interlayer insulating film having an opening is formed so as to cover the gate electrode. A source electrode electrically connected to the source region and the body regions is formed in the opening. A recombination layer is formed between the body region and a basal plane dislocation is a layer having point defect density higher than that of the epitaxial layer located directly under the recombination layer or having a metal added to the epitaxial layer.
    Type: Application
    Filed: October 9, 2019
    Publication date: May 21, 2020
    Inventors: Hironobu MIYAMOTO, Yasuhiro OKAMOTO, Kenichi HISADA, Koichi ARAI, Nobuo MACHIDA
  • Publication number: 20200161480
    Abstract: In a Schottky barrier diode region, a Schottky barrier diode is formed between an n-type drift layer and a metal layer, and in a body diode region, a p-type semiconductor region, a p-type semiconductor region, and a p-type semiconductor region are formed in order from a main surface side in the drift layer, and a body diode is formed between the p-type semiconductor region and the drift layer. An impurity concentration of the p-type semiconductor region is decreased lower than the impurity concentration of the p-type semiconductor regions, thereby increasing the reflux current flowing through the Schottky barrier diode and preventing the reflux current from flowing through the body diode.
    Type: Application
    Filed: October 10, 2019
    Publication date: May 21, 2020
    Inventors: Yasuhiro OKAMOTO, Nobuo MACHIDA, Kenichi HISADA
  • Patent number: 10566183
    Abstract: Characteristics of a semiconductor device are improved. A method of manufacturing a semiconductor device of the invention includes a step of forming a gate insulating film over a nitride semiconductor layer. The step includes steps of forming a crystalline Al2O3 film on the nitride semiconductor layer, forming a SiO2 film on the Al2O3 film, and forming an amorphous Al2O3 film on the SiO2 film. The step further includes steps of performing heat treatment on the amorphous Al2O3 to crystallize the amorphous Al2O3, thereby forming a crystalline Al2O3 film, and forming a SiO2 film on the crystalline Al2O3 film. In this way, since a film stack, which is formed by alternately stacking the crystalline Al2O3 films and the SiO2 films from a bottom side, is used as the gate insulating film, threshold voltage can be cumulatively increased.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: February 18, 2020
    Assignee: Renesas Electronics Corporation
    Inventors: Yasuhiro Okamoto, Takashi Ide
  • Publication number: 20200040175
    Abstract: [Object] To provide a ring-shaped sealing member having both the sealing property and slidability. [Solving Means] A sealing member is formed in a ring shape and has a sliding surface. The sealing member includes: 100 parts by weight of fluorine rubber; and 0.5 to 50 (inclusive) parts by weight of a particulate resin. The particulate resin includes a compatible portion and a lubrication portion, the compatible portion having compatibility with the fluorine rubber, the lubrication portion having lubricity with respect to the fluorine rubber. A Shore A hardness measured using the sliding surface as a pressing surface is not less than 80. In this sealing member, since rubber elasticity is achieved by the fluorine rubber, a favorable sealing property can be realized. Further, it is possible to impart high slidability to the sealing member by the action of the lubrication portion of the particulate resin. Therefore, this sealing member has both the sealing property and slidability.
    Type: Application
    Filed: March 27, 2018
    Publication date: February 6, 2020
    Inventors: Akihiro OWADA, Takashi SHINADA, Takuya OKAMOTO, Shiori IRIE, Yasuhiro GUNJI, Noriaki YAMAMOTO, Hajime YANAGAWA
  • Patent number: 10537229
    Abstract: An introduction device includes an operation main body, a bending section capable of bending in a first direction and a second direction, a first rotary body configured to be operated at a time of bending the bending section in the first direction, and a second rotary body configured to be operated at a time of bending the bending section in the second direction, the second rotary body being configured such that a part of an outer edge is located on an extension plane which is defined by extending the first surface, or the part of the outer edge is located more on the distal-end direction side of the first shaft portion than the extension plane.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: January 21, 2020
    Assignee: OLYMPUS CORPORATION
    Inventor: Yasuhiro Okamoto
  • Patent number: 10541321
    Abstract: In a manufacturing method of a semiconductor device according to the present invention, a buffer layer including a first nitride semiconductor layer, a channel layer including a second nitride semiconductor layer, and a barrier layer including a third nitride semiconductor layer are sequentially laminated, and a fourth nitride semiconductor layer is further laminated thereover. Then, a laminate of a gate insulating film and a gate electrode is formed over a first region of the fourth nitride semiconductor layer, and a silicon nitride film is formed over the fourth nitride semiconductor layer and the laminate. By bringing the fourth nitride semiconductor layers on both sides of the gate electrode into contact with the silicon nitride film in this way, the function of suppressing 2DEG can be lowered, and the 2DEG that has been eliminated after the formation of the fourth nitride semiconductor layer can be restored.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: January 21, 2020
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Yasuhiro Okamoto
  • Patent number: 10517463
    Abstract: An endoscope operation mechanism includes: a dial operating an endoscope function; a detection sensor that has a sensor rotation shaft to which rotation of a dial rotation shaft of the dial is transmitted and detects the rotation amount, and that outputs an electrical signal in accordance with the detected rotation amount to a control portion performing driving control of a driving source of the endoscope function; an initial position reversion mechanism applying a rotational force to the dial rotation shaft in an opposite direction to the direction in which the dial rotation shaft is rotated, to thereby cause the rotational position of the dial to return to an initial position; and a switching mechanism switchable between a first state in which a rotational force from the initial position reversion mechanism is applied to the dial rotation shaft, and a second state in which the rotational force is not applied.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: December 31, 2019
    Assignee: OLYMPUS CORPORATION
    Inventor: Yasuhiro Okamoto
  • Patent number: 10493822
    Abstract: A radiant heater device includes: a heater main body having a heating portion that generates heat by being supplied with electric power to radiate radiation heat due to the heat supplied from the heating portion; an output control unit that controls an output of the heating portion; and a maximum output determination unit that determines an upper limit of the output of the heating portion depending on a heat load around the heater main body. The output control unit controls the output of the heating portion depending on the heat load not to exceed the upper limit of the output determined by the maximum output determination unit.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: December 3, 2019
    Assignee: DENSO CORPORATION
    Inventors: Yasuhiro Sagou, Takuya Kataoka, Asami Okamoto, Manabu Maeda, Koji Ota, Hiroyuki Sakane, Akira Oga, Masatoshi Nakashima, Hiroshi Takeda, Masataka Kinoshita, Hideaki Kako, Kimitake Ishikawa
  • Publication number: 20190359032
    Abstract: A radiant heater device has an electrode embedded in a substrate part and a plurality of heating parts. The electrodes are formed by material that has low specific resistance. An area occupied by the electrode is restricted. The heating parts are formed by material having high specific resistance in order to generate heat so that radiation is produced. The electrode and the heating part are electrically connected within the substrate part. The plurality of heating parts are arranged in parallel between a pair of electrodes. The electrodes and the heating parts are formed in a film-like shape, and the thermal capacity is reduced. As a result, a temperature of the heating parts rises promptly in response to a turning on of power. In addition, the temperature of the heating parts promptly decreases when an object comes into contact therewith.
    Type: Application
    Filed: August 12, 2019
    Publication date: November 28, 2019
    Inventors: Yasuhiro SAGOU, Takuya KATAOKA, Asami OKAMOTO, Manabu MAEDA, Koji OTA, Masayuki AOYAMA, Kouji KONDOH, Motoki SHIMIZU, Yoshihiko SHIRAISHI, Yoshitarou YAZAKI, Keita SAITOU
  • Patent number: 10476209
    Abstract: A shield connector includes a first housing and a second housing, a first shield shell configured to cover the first housing, and a second shield shell configured to cover the second housing. The first shield shell includes a first connecting portion and the second shield shell includes a second connecting portion. An electrically conductive fastening member electrically connects the first connecting portion and the second connecting portion to each other. The first housing includes a first fixing portion, and the second housing includes a second fixing portion. The first fixing portion and the second fixing portion are held together by the fastening member in a state in which the first fixing portion and the second fixing portion are interposed between the first connecting portion and the second connecting portion.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: November 12, 2019
    Assignee: SUMITOMO WIRING SYSTEMS, LTD.
    Inventors: Masaru Kitagawa, Shinyu Nagashima, Masaki Okamoto, Yasuhiro Kudo
  • Patent number: 10461159
    Abstract: Characteristics of a semiconductor device using a nitride semiconductor are improved. A semiconductor device of the present invention includes a buffer layer, a channel layer, a barrier layer, a mesa-type 2DEG dissolving layer, a source electrode, a drain electrode, a gate insulating film formed on the mesa-type 2DEG dissolving layer, and an overlying gate electrode. The gate insulating film of the semiconductor device includes a sputtered film formed on the mesa-type 2DEG dissolving layer and a CVD film formed on the sputtered film. The sputtered film is formed in a non-oxidizing atmosphere by a sputtering process using a target including an insulator. This makes it possible to reduce positive charge amount at a MOS interface and in gate insulating film and increase a threshold voltage, and thus improve normally-off characteristics.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: October 29, 2019
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Hironobu Miyamoto, Tatsuo Nakayawa, Yasuhiro Okamoto, Atsushi Tsuboi
  • Publication number: 20190296494
    Abstract: A shield connector includes a first housing and a second housing, a first shield shell configured to cover the first housing, and a second shield shell configured to cover the second housing. The first shield shell includes a first connecting portion and the second shield shell includes a second connecting portion. An electrically conductive fastening member electrically connects the first connecting portion and the second connecting portion to each other. The first housing includes a first fixing portion, and the second housing includes a second fixing portion. The first fixing portion and the second fixing portion are held together by the fastening member in a state in which the first fixing portion and the second fixing portion are interposed between the first connecting portion and the second connecting portion.
    Type: Application
    Filed: May 12, 2017
    Publication date: September 26, 2019
    Applicant: SUMITOMO WIRING SYSTEMS, LTD.
    Inventors: Masaru KITAGAWA, Shinyu NAGASHIMA, Masaki OKAMOTO, Yasuhiro KUDO
  • Patent number: 10413163
    Abstract: An introduction device includes, a grip portion which has a first wall portion, and a second wall portion, a curving portion which is configured to curve in a first surface and in a second surface that intersects at right angles with the first surface, a first dial portion which is rotatably provided in the first wall portion and which curves the curving portion in the first surface in accordance with a rotation amount, and a dial unit includes a shaft rotatably provided on the second wall portion, and a second dial portion which is fixed to the shaft and which curves the curving portion in the second surface in accordance with a rotation amount, the shaft being oblique to the longitudinal axis when seen from the side of the second wall portion.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: September 17, 2019
    Assignee: OLYMPUS CORPORATION
    Inventor: Yasuhiro Okamoto
  • Patent number: 10410868
    Abstract: A semiconductor device includes a first nitride semiconductor layer formed over a substrate, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a band gap wider than a band gap of the first nitride semiconductor layer, a trench penetrating through the second nitride semiconductor layer and reaching an inside of the first nitride semiconductor layer, a gate electrode placed in the trench over a gate insulating film, and a first electrode and a second electrode formed over the second nitride semiconductor layer on both sides of the gate electrode, respectively.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: September 10, 2019
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Takashi Inoue, Tatsuo Nakayama, Yasuhiro Okamoto, Hiroshi Kawaguchi, Toshiyuki Takewaki, Nobuhiro Nagura, Takayuki Nagai, Yoshinao Miura, Hironobu Miyamoto
  • Patent number: 10396190
    Abstract: Characteristics of a semiconductor device are improved. A semiconductor device includes a sequential stack of a buffer layer, a channel layer, and a barrier layer, and includes a mesa part including a fourth nitride semiconductor layer formed over the stack, and a side part formed on both sides of the mesa part and including a thin film part of the fourth nitride semiconductor layer. Generation of 2DEG is suppressed below the mesa part while being unsuppressed below the side part. In this way, the side part that disables the 2DEG suppression effect is provided on an end portion of the mesa part, thereby a distance from an end portion of the side part to the gate electrode is increased, making it possible to suppress leakage caused by a current path passing through an undesired channel formed between a gate insulating film and the mesa part.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: August 27, 2019
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Takehiro Ueda, Yasuhiro Okamoto