Abstract: To improve an on-resistance of a semiconductor device. A plurality of collector regions are formed at a predetermined interval on a bottom surface of a drift layer made of SiC. Next, on the bottom surface of the drift layer, both of the drift layer and a collector region via a silicide layer are connected to a collector electrode.

Abstract: In a Schottky barrier diode region, a Schottky barrier diode is formed between an n-type drift layer and a metal layer, and in a body diode region, a p-type semiconductor region, a p-type semiconductor region, and a p-type semiconductor region are formed in order from a main surface side in the drift layer, and a body diode is formed between the p-type semiconductor region and the drift layer. An impurity concentration of the p-type semiconductor region is decreased lower than the impurity concentration of the p-type semiconductor regions, thereby increasing the reflux current flowing through the Schottky barrier diode and preventing the reflux current from flowing through the body diode.

Abstract: An external mechanism for an endoscope includes: a bending wheel configured to engage with a second UD knob of a second bending operation device provided in an operation portion of an endoscope; a motor portion configured to generate a driving force for rotating the bending wheel; a housing case housing the bending wheel and the motor portion and detachably attached to the operation portion, and an operation switch arranged outside the housing case and configured to output a control signal to the motor portion due to the operating element being operated, in which the operation switch is pivotally supported by the rotation shaft and rotates with respect to the housing case.

Abstract: An external mechanism for endoscope includes: an abutment surface that is a first surface configured to cover a knob arranging surface at which a second bending operation knob is arranged in an operation portion of an endoscope; a wheel configured to engage with the second bending operation knob arranged at the knob arranging surface; a motor configured to generate a driving force for rotating the wheel; a housing case that houses the wheel and the motor; a case attaching/detaching and fixing section for detachably attaching the housing case to the operation portion of the endoscope; and a locking member provided at the housing case and configured to be locked on the knob arranging surface of the endoscope and a large-diameter portion end face adjacent to the knob arranging surface in the operation portion of the endoscope.

Abstract: Semiconductor device has a cell region and a peripheral region, and has a drift layer, a trench, an gate dielectric film on an inner wall of the trench, a gate electrode, and a p-type first semiconductor region below the trench in the cell region on a semiconductor substrate. Further, in the peripheral region on the semiconductor substrate, p-type second semiconductor region is formed in the same layer as the p-type first semiconductor region. a width of the p-type first semiconductor region and a width of the p-type second semiconductor region are different.

Abstract: An external mechanism for endoscope includes a bending wheel, a motor, a housing case, and an operation switch, a case side fitting surface and a switch side fitting surface are formed flat to each other, and when a protrusion is provided on a contact surface of the housing case, a recess is provided on a contact surface of the operation switch, whereas when a protrusion is provided on the contact surface of the operation switch, a recess is provided on the contact surface of the housing case.

Abstract: In a Schottky barrier diode region, a Schottky barrier diode is formed between an n-type drift layer and a metal layer, and in a body diode region, a p-type semiconductor region, a p-type semiconductor region, and a p-type semiconductor region are formed in order from a main surface side in the drift layer, and a body diode is formed between the p-type semiconductor region and the drift layer. An impurity concentration of the p-type semiconductor region is decreased lower than the impurity concentration of the p-type semiconductor regions, thereby increasing the reflux current flowing through the Schottky barrier diode and preventing the reflux current from flowing through the body diode.

Abstract: Provided are an inspection support method, inspection support apparatus, and inspection support program that are able to efficiently make an inspection plan for a production facility.

Abstract: An external mechanism for endoscope includes a wheel configured to be engaged with a second bending operation up and down knob of a second bending operation apparatus provided in an operation portion of an endoscope, a motor configured to generate driving force for rotating the wheel, an operation switch configured to output a driving control signal for the motor, a container case that contains the wheel and the motor, a case attachment and detachment fixation member with which the container case can be attached to and detached from the operation portion, and a switch case attached to the container case and configured to be able to turn between a first position that covers a part of the operation portion and a second position away from the first position.

Abstract: An external mechanism for endoscope includes a bending wheel, a motor, a housing case, a case detachably fixing member, and a mounting restricting member obstructing mounting of a housing case on a sub operation section by interfering with a second bending upward and downward fixing lever in a state where the second bending upward and downward fixing lever is at a position other than a release position.

Abstract: An endoscope includes a flexible tube section including coiled tubes, a motor disposed on a proximal side of the flexible tube section, a driving force transmission unit disposed on a distal side of the flexible tube section, and a drive shaft provided inside the flexible tube section along a long axis, the drive shaft being caused to perform rotation around the long axis by a driving force of the motor and to transmit the rotation of the motor to the driving force transmission unit, where torsional resistance of the flexible tube section around the long axis is set higher than torsional resistance between a relay gear of the motor and a drive gear of the driving force transmission unit through the drive shaft.

Abstract: An external mechanism for endoscope includes a wheel engaged with a second bending operation up and down knob of a second bending operation apparatus provided in an operation portion of an endoscope, a motor configured to generate driving force for rotating the wheel, an operation switch for outputting a driving control signal to the motor, a container case containing the wheel and the motor, a case attachment and detachment fixation member with which the container case can be attached to and detached from the operation portion, a switch case attached to the container case and configured to be able to turn between a first position covering a part of the operation portion and a second position away from the first position, and a dummy switch provided in the switch case and configured to operate a remote switch arranged in the operation portion in the first position via the switch case.

Abstract: An insertion device includes a shape-variable tube elastically returning while the shape-variable tube bends at a tube bending radius of a tube radius boundary value or more, and a shaft rotating around a shaft axis inside the shape-variable tube so that the shaft transmits a driving force to drive a motion section from a first extending direction toward a second extending direction. The shaft elastically returns while the shaft bends at a shaft bending radius of a shaft radius boundary value or more, and rotates without being deformed while the elastic return is impossible when the shape-variable tube bends in an elastically returnable range.

Abstract: An n-type epitaxial layer is formed on an n-type semiconductor substrate made of silicon carbide. p-type body regions are formed in the epitaxial layer, and n-type source region is formed in the body region. On the body region between the source region and the epitaxial layer, a gate electrode is formed via a gate dielectric film, and an interlayer insulating film having an opening is formed so as to cover the gate electrode. A source electrode electrically connected to the source region and the body regions is formed in the opening. A recombination layer is formed between the body region and a basal plane dislocation is a layer having point defect density higher than that of the epitaxial layer located directly under the recombination layer or having a metal added to the epitaxial layer.

Abstract: In a Schottky barrier diode region, a Schottky barrier diode is formed between an n-type drift layer and a metal layer, and in a body diode region, a p-type semiconductor region, a p-type semiconductor region, and a p-type semiconductor region are formed in order from a main surface side in the drift layer, and a body diode is formed between the p-type semiconductor region and the drift layer. An impurity concentration of the p-type semiconductor region is decreased lower than the impurity concentration of the p-type semiconductor regions, thereby increasing the reflux current flowing through the Schottky barrier diode and preventing the reflux current from flowing through the body diode.

Abstract: Characteristics of a semiconductor device are improved. A method of manufacturing a semiconductor device of the invention includes a step of forming a gate insulating film over a nitride semiconductor layer. The step includes steps of forming a crystalline Al2O3 film on the nitride semiconductor layer, forming a SiO2 film on the Al2O3 film, and forming an amorphous Al2O3 film on the SiO2 film. The step further includes steps of performing heat treatment on the amorphous Al2O3 to crystallize the amorphous Al2O3, thereby forming a crystalline Al2O3 film, and forming a SiO2 film on the crystalline Al2O3 film. In this way, since a film stack, which is formed by alternately stacking the crystalline Al2O3 films and the SiO2 films from a bottom side, is used as the gate insulating film, threshold voltage can be cumulatively increased.

Abstract: In a manufacturing method of a semiconductor device according to the present invention, a buffer layer including a first nitride semiconductor layer, a channel layer including a second nitride semiconductor layer, and a barrier layer including a third nitride semiconductor layer are sequentially laminated, and a fourth nitride semiconductor layer is further laminated thereover. Then, a laminate of a gate insulating film and a gate electrode is formed over a first region of the fourth nitride semiconductor layer, and a silicon nitride film is formed over the fourth nitride semiconductor layer and the laminate. By bringing the fourth nitride semiconductor layers on both sides of the gate electrode into contact with the silicon nitride film in this way, the function of suppressing 2DEG can be lowered, and the 2DEG that has been eliminated after the formation of the fourth nitride semiconductor layer can be restored.

Abstract: An introduction device includes an operation main body, a bending section capable of bending in a first direction and a second direction, a first rotary body configured to be operated at a time of bending the bending section in the first direction, and a second rotary body configured to be operated at a time of bending the bending section in the second direction, the second rotary body being configured such that a part of an outer edge is located on an extension plane which is defined by extending the first surface, or the part of the outer edge is located more on the distal-end direction side of the first shaft portion than the extension plane.

Abstract: An endoscope operation mechanism includes: a dial operating an endoscope function; a detection sensor that has a sensor rotation shaft to which rotation of a dial rotation shaft of the dial is transmitted and detects the rotation amount, and that outputs an electrical signal in accordance with the detected rotation amount to a control portion performing driving control of a driving source of the endoscope function; an initial position reversion mechanism applying a rotational force to the dial rotation shaft in an opposite direction to the direction in which the dial rotation shaft is rotated, to thereby cause the rotational position of the dial to return to an initial position; and a switching mechanism switchable between a first state in which a rotational force from the initial position reversion mechanism is applied to the dial rotation shaft, and a second state in which the rotational force is not applied.

Abstract: Characteristics of a semiconductor device using a nitride semiconductor are improved. A semiconductor device of the present invention includes a buffer layer, a channel layer, a barrier layer, a mesa-type 2DEG dissolving layer, a source electrode, a drain electrode, a gate insulating film formed on the mesa-type 2DEG dissolving layer, and an overlying gate electrode. The gate insulating film of the semiconductor device includes a sputtered film formed on the mesa-type 2DEG dissolving layer and a CVD film formed on the sputtered film. The sputtered film is formed in a non-oxidizing atmosphere by a sputtering process using a target including an insulator. This makes it possible to reduce positive charge amount at a MOS interface and in gate insulating film and increase a threshold voltage, and thus improve normally-off characteristics.