Abstract: There is provided a solid-state image pickup device that has a plurality of scanning lines that extends in a predetermined direction, a plurality of data lines that extends in a direction for intersecting the scanning lines, and a plurality of bias lines within an image pickup area on a substrate. For each of a plurality of pixels disposed in positions corresponding to intersections of the plurality of scanning lines and the plurality of data lines, a field effect transistor that is controlled by the scanning line and a photoelectric conversion element that has a electrode electrically connected to the data line through the field effect transistor and a electrode electrically connected to the bias line are formed, and a constant electric potential line for electrostatic protection is formed on the substrate. For each of bias lines, a bias line electrostatic protection circuit having a protection diode.

Abstract: A substrate for a semiconductor device includes: a base substrate; a semiconductor layer that has a source region, a drain region, a plurality of channel regions, and at least one intermediate region; a source electrode being in contact with the source region; a drain electrode being in contact with the drain region; a gate electrode that overlaps the plurality of channel regions, the intermediate region, and each of a part of the source electrode and a part of the drain electrode; and a floating electrode being in contact with the intermediate region. The size of an area where the floating electrode and the gate electrode overlap each other is smaller than the sum of the size of an area where the source electrode and the gate electrode overlap each other and the size of an area where the drain electrode and the gate electrode overlap each other.

Abstract: It is possible to suppress the voltage amplitudes of data lines and to prevent deterioration in display quality by a simple configuration. Each of pixels 110 includes a pixel capacitor and a storage capacitor of which one end is connected to a pixel electrode and the other end is connected to each capacitive line 132. If first, second, third, . . . , 320th, and 321st scanning lines 112 are sequentially selected, the capacitive line 132 of each row is provided with TFTs 152, 154, 156 and 158. A source electrode of the TFT 156 of a first row is connected to a first feed line 165 and a gate electrode thereof is connected to a first scanning line 112. A source electrode of the TFT 158 is connected to a second feed line 167 and a gate electrode thereof is connected to a common drain electrode of the TFTs 152 and 154. The drain electrodes of the TFT 156 and 158 are connected to the first capacitive line 132. A gate electrode of the TFT 152 is connected to a second scanning line 112.

Abstract: A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first recess is formed in a semiconductor substrate to define an active region on the semiconductor substrate. The active region includes a protruding portion of the semiconductor substrate surrounded by the first recess. The protruding portion has a sloped side surface. A first insulating film that fills the first recess is formed. A gate recess is formed in the active region to form a thin film portion that upwardly extends. The thin film portion is positioned between the gate recess and the first insulating film. The thin film portion is a part of the protruding portion. An upper part of the thin film portion is removed by wet-etching to adjust a height of the thin film portion.

Abstract: An active matrix substrate including: a substrate; a display section having a pixel circuit formed on the substrate; and a protection circuit connected to an interconnection of the display section. The protection circuit has a diode-connected transistor, an insulating layer provided so as to cover the transistor, and a light-shielding layer provided in a region above the insulating layer so as to face at least a channel region in the transistor and electrically connected to at least any one of a gate electrode and a source electrode of the transistor.

Abstract: A display device is provided with a light detection unit that detects the intensity of ambient light and is capable of automatically controlling the luminosity of an illumination unit and/or the luminosity of the display device on the basis of the intensity of ambient light detected by the light detection unit. Moreover, the display device makes it possible to easily conduct a test on light-sensor characteristics.

Abstract: A bonding pad structure in a semiconductor device includes a contact pad connected to an interconnect, a bonding pad overlying the contact pad with an intervention of an insulating film and exposed from an opening of a passivation film, and an annular contact disposed between the contact pad and the bonding pad for electric connection therebetween. The annular contact encircles the opening as viewed normal to the substrate surface.

Abstract: A liquid crystal display device of the invention has: a display panel with an active matrix substrate 2 and a second substrate of transparent material deposed opposite that substrate; an illuminating unit that illuminates the display panel; and a photosensing unit that is provided on the active matrix substrate and has an ambient light photosensor that senses external light. The ambient light photosensor is constituted of a thin film transistor. At least the source electrode SL and drain electrode DL of the thin film transistor are covered by a shielding transparent electrode 6, with transparent insulator 3 and 5 interposed. The transparent electrode 6 is electrically connected to the drain electrode DL, and moreover is connected to a power source supplying constant voltage. Thanks to such structure, a display device is provided in which the ambient light photosensor is built into a panel substrate so as not to be affected by external noise and the peripheral circuits.

Abstract: A communication device and a communication method capable of transmitting data after confirming a destination device in one SMTP communication. A transmitter communication device carries out a communication request to a recipient communication device and SMTP communication is started. The recipient communication device transmits information of a recipient stored in a storage unit to the transmitter communication device under a prescribed procedure. Before receiving the data, the recipient communication device suspends the communication protocol with a communication channel maintained. The transmitter communication device displays the received information of the recipient on a display unit, and suspends the communication protocol with the communication channel maintained. Accordingly, a user can confirm a transmission destination from the display. After confirming the transmission destination, the user instructs to transmit the data.

Abstract: An electro-optical-apparatus substrate includes, a substrate, a plurality of scanning lines and a plurality of data lines provided on the substrate, the scanning lines and data lines intersecting each other; a plurality of pixel electrodes provided at intersections of the plurality of scanning lines and the plurality of data lines; and a plurality of semiconductor devices that control on/off switching of the pixel electrodes, each of the plurality of semiconductor devices corresponding to the pixel electrode. At least one semiconductor device among the plurality of semiconductor devices is arranged so as to be at least partially covered by another pixel electrode that is adjacent to one pixel electrode that corresponds to the one semiconductor device when viewed on the substrate in plan view.

Abstract: A display device according to an embodiment of the invention includes a display panel, a drive circuit that drives the display panel, an illuminating unit that illuminates the display panel, a photosensing section Ls having an ambient light photosensor Ts that senses the brightness of ambient light and a capacitor Cw that is charged with a predetermined reference voltage via a first switch S1, an ambient light photosensor reading section Re1 that reads a value sensed by the photosensing section, and a controller that controls the illuminating unit according to an output of the ambient light photosensor reading section. The ambient light photosensor reading section is provided with a noise avoidance unit that avoids erroneous sensing in the photosensing section induced as a result of noise generated when the drive circuit operates.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of recesses in a semiconductor substrate, forming a gate insulating film in the plurality of recesses, and a plurality of gate electrodes on the gate insulating film in the plurality of recesses, forming an insulating layer on the semiconductor substrate and the plurality of gate electrodes, forming a plurality of contact holes in the insulating layer, the contact holes being formed between adjacent ones of the plurality of gate electrodes, implanting a first impurity into the semiconductor substrate through the plurality of contact holes to form each of source and drain regions in contact with the gate insulating film.

Abstract: A semiconductor device includes a memory cell array region including a plurality of memory cells, an annular groove surrounding the memory cell array region, a protective insulating film covering the inner wall of the annular groove, and a conductor filling the annular groove.

Abstract: A display device is provided with a light detection unit that detects the intensity of ambient light and is capable of automatically controlling the luminosity of an illumination unit and/or the luminosity of the display device on the basis of the intensity of ambient light detected by the light detection unit. Moreover, the display device makes it possible to easily conduct a test on light-sensor characteristics.

Abstract: A semiconductor device is provide with a semiconductor substrate, a groove formed in the semiconductor substrate, a gate insulting film formed on the inner wall of the groove, a gate electrode formed in the groove, and a source/drain region and an LDD region arranged in the direction that is substantially orthogonal to the substrate surface of the semiconductor substrate.

Abstract: There is provided a solid-state image pickup device that has a plurality of scanning lines that extends in a predetermined direction, a plurality of data lines that extends in a direction for intersecting the scanning lines, and a plurality of bias lines within an image pickup area on a substrate. For each of a plurality of pixels disposed in positions corresponding to intersections of the plurality of scanning lines and the plurality of data lines, a field effect transistor that is controlled by the scanning line and a photoelectric conversion element that has a electrode electrically connected to the data line through the field effect transistor and a electrode electrically connected to the bias line are formed, and a constant electric potential line for electrostatic protection is formed on the substrate. For each of bias lines, a bias line electrostatic protection circuit having a protection diode.

Abstract: A method of manufacturing a semiconductor device is provided. Device separation portions defining first, second and third regions are formed in a substrate. A recess is formed at the first region. An N-type well is formed at the third region. An N-type polysilicon layer is formed at the first and second regions. A P-type polysilicon layer is formed at the third region. At least one of metal silicide film and a metal film is formed on the N-type polysilicon layer and the P-type polysilicon layer. Etching is performed to form a gate electrode including the N-type polysilicon layer at the first and second regions and a gate electrode including the P-type polysilicon layer at the third region. A cell transistor having a recess channel structure is formed at the first region, an nMOSFET structure is formed at the second region, and a pMOSFET structure is formed at the third region.

Abstract: A DRAM device includes contact pads having a bottom in contact with a corresponding source/drain region 21 and a top in contact with a bottom of an overlying contact plug. The source/drain region has a recess caused by misalignment of the contact pad with respect to the source/drain region, the recess causing division of the original source/drain region. An additional diffused region is formed by ion-implantation to couple the divided source/drain region to reduce the junction leakage current flowing across the source/drain region.

Abstract: A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film.

Abstract: With the related art, the choice of locations for disposition of ambient light photosensors is narrow, and consequently it is difficult to respond flexibly to user specifications for differing structures of the case. With a display device of the invention however, ambient light photosensors can be disposed laterally and longitudinally, enabling the intensity of light in longitudinal or lateral directions to be sensed at the same levels. Also, bridge-connecting together the longitudinally-disposed ambient light photosensors enables ambient light photosensors to be disposed close to the outer periphery of the display area in both the longitudinal and lateral directions. Thereby, the problems with the related art can be resolved.