Abstract: With the related art, the choice of locations for disposition of ambient light photosensors is narrow, and consequently it is difficult to respond flexibly to user specifications for differing structures of the case. With a display device of the invention however, ambient light photosensors can be disposed laterally and longitudinally, enabling the intensity of light in longitudinal or lateral directions to be sensed at the same levels. Also, bridge-connecting together the longitudinally-disposed ambient light photosensors enables ambient light photosensors to be disposed close to the outer periphery of the display area in both the longitudinal and lateral directions. Thereby, the problems with the related art can be resolved.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of recesses in a semiconductor substrate, forming a gate insulating film in the plurality of recesses, and a plurality of gate electrodes on the gate insulating film in the plurality of recesses, forming an insulating layer on the semiconductor substrate and the plurality of gate electrodes, forming a plurality of contact holes in the insulating layer, the contact holes being formed between adjacent ones of the plurality of gate electrodes, implanting a first impurity into the semiconductor substrate through the plurality of contact holes to form each of source and drain regions in contact with the gate insulating film.

Abstract: In a method of manufacturing a semiconductor device, a recess is formed in a semiconductor substrate. A gate insulating film is formed on a surface of the semiconductor substrate and a surface of the recess; and a gate electrode film is deposited on the gate insulating film to fill the recess. Then, a gate electrode is formed by etching the gate electrode film by using a predetermined mask, and ion implantation into the semiconductor substrate is carried out to form diffusion layers extending from the recess, before the forming a gate electrode at least.

Abstract: The present invention provides a semiconductor device comprising: a dual-gate peripheral transistor having a transistor structure of surface channel nMOSFET and a transistor structure of surface channel pMOSFET; and a cell transistor having an nMOSFET structure with a recess channel structure, a gate electrode of the cell transistor having an N-type polysilicon layer which contains of N-type impurities at an approximately constant concentration.

Abstract: The invention provides a display unit that has a display area and first and second photodetectors 10a and 10b on a substrate and outputs as a light intensity signal S a light intensity detected by the first and second photodetectors 10a and 10b. The first photodetector 10a includes a first photodetection circuit LS1 outputting a first output signal Sa to an ambient light photosensor reader 20, and the second photodetector 10b includes a light-reducing unit and a second photodetection circuit LS2 outputting a second output signal Sb to an ambient light photosensor reader 20. The ambient light photosensor reader 20 includes a photodegradation factor calculator 21 calculating a photodegradation reparation factor K, a photodegradation rate calculator 22 deriving a photodegradation rate D based on the photodegradation reparation factor K, and a light signal output unit 24 outputting a light intensity signal S based on the photodegradation rate D.

Abstract: A method of manufacturing the semiconductor device includes forming a first polysilicon film on an active region and an element isolation region made of a dielectric material provided in a semiconductor substrate; forming a hard mask on the first polysilicon film; etching the first polysilicon film, the semiconductor substrate in the active region and the dielectric material in the element isolation region by using the hard mask to form first and second gate trenches in the active region and the element isolation region, respectively; and filling the first and second gate trenches with a second polysilicon film before the hard mask is removed.

Abstract: A method for manufacturing a semiconductor device comprises the steps of forming a gate trench in a semiconductor substrate, forming a gate insulation film in an inner wall of the gate trench, filling a gate electrode material into at least an inside of the gate trench, forming a gate electrode by patterning the gate electrode material, and selectively forming a punch-through stopper region prior to patterning the gate electrode material, using a mask in a prescribed position of the semiconductor substrate that is adjacent to the gate trench. The step for forming the punch-through stopper region may be performed subsequent to the step for filling the gate electrode material into the gate trench, or may be performed prior to the step for forming the gate trench.

Abstract: A liquid crystal display according to an embodiment of the present invention includes a liquid crystal display panel, an illumination unit for the liquid crystal display panel, a plurality of photodetectors, and a control unit Cnt to control the brightness of the illumination unit. The photodetectors are TFT ambient light photosensors LS1 to LS3, for example, which produce outputs that require time to reach a predetermined value, which the time is correlated with the intensity of ambient light. Detection circuits coupled to the photodetectors include circuits (Cmp1 to Cmp3) logically inverted when an output from the TFT ambient light photosensors LS1 to LS3 reaches a predetermined value. The control unit Cnt includes a discrimination implement Maj that determines that the intensity of ambient light has changed when outputs from the majority of the detection circuits are logically inverted.

Abstract: The present invention provides a semiconductor device comprising: a dual-gate peripheral transistor having a transistor structure of surface channel nMOSFET and a transistor structure of surface channel pMOSFET; and a cell transistor having an nMOSFET structure with a recess channel structure, a gate electrode of the cell transistor having an N-type polysilicon layer which contains of N-type impurities at an approximately constant concentration.

Abstract: A voice synthesizer, which obtains a voice by emphasizing a specific part of a sentence, includes an emphasis degree deciding unit that extracts a word or a collocation to be emphasized from among respective words or respective collocations on the basis of an extracting reference with respect to the each word or the each collocation included in a sentence and deciding an emphasis degree of the extracted word or the extracted collocation, an acoustic processing unit that synthesizes a voice having an emphasis degree which is decided by the emphasis degree deciding unit applied to the word to be emphasized or the collocation to be emphasized, whereby the emphasized part of the word or the collocation can be obtained automatically on the basis of the extracting reference, such as a frequency of appearance and a level of importance of the word or the collocation.

Abstract: A semiconductor memory device and a manufacturing method thereof are provided which enable cell-contact plugs to be formed at high yields and the yields of semiconductor memory devices to be improved in the manufacturing process. The semiconductor memory device includes: a semiconductor substrate; MOS transistors which are formed on a surface of the semiconductor substrate; a cell-contact plug which is made of poly-silicon film, is located between gates of the MOS transistors, and is connected to a source or a drain of one of the MOS transistors; a pad metal layer which is formed on the cell-contact plug; an interlayer dielectric film which is formed on the pad metal layer; a storage capacitor which is formed on the interlayer dielectric film; and a contact plug which is formed inside an opening which penetrates the interlayer dielectric film, and connects the storage capacitor with the pad metal layer.

Abstract: It is possible to suppress the voltage amplitudes of data lines and to prevent deterioration in display quality by a simple configuration. Each of pixels 110 includes a pixel capacitor and a storage capacitor of which one end is connected to a pixel electrode and the other end is connected to each capacitive line 132. If first, second, third, . . . , 320th, and 321st scanning lines 112 are sequentially selected, the capacitive line 132 of each row is provided with TFTs 152, 154, 156 and 158. A source electrode of the TFT 156 of a first row is connected to a first feed line 165 and a gate electrode thereof is connected to a first scanning line 112. A source electrode of the TFT 158 is connected to a second feed line 167 and a gate electrode thereof is connected to a common drain electrode of the TFTs 152 and 154. The drain electrodes of the TFT 156 and 158 are connected to the first capacitive line 132. A gate electrode of the TFT 152 is connected to a second scanning line 112.

Abstract: A display device according to an embodiment of the invention includes a display panel, a drive circuit that drives the display panel, an illuminating unit that illuminates the display panel, a photosensing section Ls having an ambient light photosensor Ts that senses the brightness of ambient light and a capacitor Cw that is charged with a predetermined reference voltage via a first switch S1, an ambient light photosensor reading section Re1 that reads a value sensed by the photosensing section, and a controller that controls the illuminating unit according to an output of the ambient light photosensor reading section. The ambient light photosensor reading section is provided with a noise avoidance unit that avoids erroneous sensing in the photosensing section induced as a result of noise generated when the drive circuit operates.

Abstract: With the related art, the choice of locations for disposition of ambient light photosensors is narrow, and consequently it is difficult to respond flexibly to user specifications for differing structures of the case. With a display device of the invention however, ambient light photosensors can be disposed laterally and longitudinally, enabling the intensity of light in longitudinal or lateral directions to be sensed at the same levels. Also, bridge-connecting together the longitudinally-disposed ambient light photosensors enables ambient light photosensors to be disposed close to the outer periphery of the display area in both the longitudinal and lateral directions. Thereby, the problems with the related art can be resolved.

Abstract: The invention provides a liquid crystal display device which makes it possible to increase functionality by mounting a function element without having to externally mount the function element onto an area near and outside of a liquid crystal display panel. A liquid crystal display device includes a plurality of pixels disposed in a matrix form and a drive element to drive the pixels. A function element, having a function that is different from the function of the drive element, is disposed in an area including the plurality of pixels and used to display. By this, it is possible to increase functionality because function elements having various functions can be incorporated inside a panel.

Abstract: A DRAM device includes contact pads having a bottom in contact with a corresponding source/drain region 21 and a top in contact with a bottom of an overlying contact plug. The source/drain region has a recess caused by misalignment of the contact pad with respect to the source/drain region, the recess causing division of the original source/drain region. An additional diffused region is formed by ion-implantation to couple the divided source/drain region to reduce the junction leakage current flowing across the source/drain region.

Abstract: A liquid crystal display device of the invention has: a display panel with an active matrix substrate 2 and a second substrate of transparent material deposed opposite that substrate; an illuminating unit that illuminates the display panel; and a photosensing unit that is provided on the active matrix substrate and has an ambient light photosensor that senses external light. The ambient light photosensor is constituted of a thin film transistor. At least the source electrode SL and drain electrode DL of the thin film transistor are covered by a shielding transparent electrode 6, with transparent insulator 3 and 5 interposed. The transparent electrode 6 is electrically connected to the drain electrode DL, and moreover is connected to a power source supplying constant voltage. Thanks to such structure, a display device is provided in which the ambient light photosensor is built into a panel substrate so as not to be affected by external noise and the peripheral circuits.

Abstract: A semiconductor device including a semiconductor substrate and a recessed transistor provided on the semiconductor substrate, wherein the recessed transistor includes a recess formed in a surface of the semiconductor substrate, an insulating film provided on a surface in the recess, a gate electrode at least partly buried in the recess, and a first diffusion layer and a second diffusion layer formed in a surface of the semiconductor substrate with the gate electrode located between the first diffusion layer and the second diffusion layer, and wherein the insulating film includes a thicker film portion between the first diffusion layer and the gate electrode, the thicker film portion being thicker than a portion of the insulating film located between the gate electrode and a channel region of the recessed transistor.

Abstract: A DRAM capable of realizing reduced power consumption, high-speed operation, and high reliability is provided. A gate electrode configuring a memory cell transistor of the DRAM is composed of an n-type polysilicon film and a W (tungsten) film stacked thereon. A part of the polysilicon film is embedded in a trench formed in a silicon substrate in order to elongate the effective channel length of the memory cell transistor. The other part of the polysilicon film is located above the trench, and an upper surface thereof is located above a surface of the silicon substrate (p-type well). Therefore, distances between the W film and a source and drain (n-type semiconductor regions) are ensured.

Abstract: A speech input device is provided with a microphone which inputs speech, a key entry detector which detects an operation of a key section which serves as a man-machine interface, and a noise eliminator which eliminates a component of an operation sound from the speech that is input into the microphone within a period in which the key entry detector detects the operation.