Abstract: Organic electroluminescent devices are disclosed. A representative device incorporates a substrate that comprises a control area and a sensitive area. A switch device and a driving device are disposed overlying the control area. A photo sensor is disposed overlying the sensitive area. An OLED element is disposed in the sensitive area and illuminating to the photo sensor. A capacitor is coupled to the photo sensor and the driving device, wherein a photo current corresponding to the brightness of the OLED element is generated in the photo sensor responsive to the OLED element illuminating the photo sensor such that a voltage of the capacitor is adjusted by the photo current to control the current passing through the driving device, thus changing the illumination of the OLED element.

Abstract: Systems for displaying images. A representative system incorporates an electroluminescent diode that comprises a substrate, an anode formed on the substrate, electroluminescent layers formed on the anode, a cathode formed on the electroluminescent layers, and a wavelength narrowing mirror structure formed directly on the cathode. Particularly, the wavelength narrowing mirror structure comprises a plurality of metal layers, and two adjacent metal layers separated by a dielectric layer.

Abstract: The invention discloses an organic electroluminescent device comprising a pixel element. The pixel element comprises a substrate comprising a control area and a sensitive area, a switch device and a driving device overlying the control area, a photo diode serving as a photo sensor overlying the sensitive area, an OLED element disposed in the sensitive area and illuminating to the photo sensor, and a capacitor coupled to the photo sensor and the driving device. Specifically, a photo current corresponding to a brightness of the OLED element is generated by the photo diode responsive to the OLED element illuminating the photo diode such that a voltage of the capacitor is adjusted by the photo current to control the current passing through the driving device, thus changing the illumination of the OLED element. A method for fabricating the OLED is also provided.

Abstract: A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.

Abstract: A light-emitting device and the fabrication method thereof. A substrate is provided. A plurality of active elements are formed on the substrate, defining a plurality of pixel areas. A color filter is formed on the pixel areas. The surface of the color filter is planarized to reduce roughness. An electrode is formed on the color filter. An light-emitting layer is formed on the electrode. A second electrode is formed on the light-emitting layer.

Abstract: A display panel with an anti-Newton ring structure is disclosed. The display panel includes a substrate with an array region and a display region defined thereon. A buffer layer is disposed on the substrate and at least one transistor is formed in the array region. The display panel further includes an anti-Newton ring structure substantially composed of a silicon layer on the buffer layer in the display region, at least one dielectric layer disposed on the anti-Newton ring structure, and a pixel electrode disposed on the dielectric layer in the display region.

Abstract: A light-emitting device and the fabrication method thereof. A substrate is provided. A plurality of active elements are formed on the substrate, defining a plurality of pixel areas. A color filter is formed on the pixel areas. The surface of the color filter is planarized to reduce roughness. An electrode is formed on the color filter. An light-emitting layer is formed on the electrode. A second electrode is formed on the light-emitting layer.

Abstract: Systems for displaying images. A representative system incorporates an electroluminescent diode that includes a composite electrode structure. Particularly, the composite electrode structure comprises a layer containing alkali or alkaline earth compounds, and a metal oxide layer or semiconductor layer. Wherein, the alkali or alkaline earth compound has carbonyl group or fluorine.

Abstract: The invention discloses an organic electroluminescent device comprising a pixel element. The pixel element comprises a substrate comprising a control area and a sensitive area, a switch device and a driving device overlying the control area, a photo diode serving as a photo sensor overlying the sensitive area, an OLED element disposed in the sensitive area and illuminating to the photo sensor, and a capacitor coupled to the photo sensor and the driving device. Specifically, a photo current corresponding to a brightness of the OLED element is generated by the photo diode responsive to the OLED element illuminating the photo diode such that a voltage of the capacitor is adjusted by the photo current to control the current passing through the driving device, thus changing the illumination of the OLED element. A method for fabricating the OLED is also provided.

Abstract: A self-aligned LDD TFT and a fabrication method thereof. The method includes providing a semiconductor layer. A first masking layer is provided over a first region of the semiconductor layer, said first masking layer comprising a material that provide a permeable barrier to a dopant. The semiconductor layer is exposed, including the first region covered by the first masking layer, to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking layer.

Abstract: An organic electroluminescent device is disclosed. A substrate comprises a control area and a sensitive area. A switch device and a driving device are disposed overlying the control area. A photo diode is disposed overlying the sensitive area. An OLED element is disposed in the sensitive area and illuminates the photo diode. A capacitor is coupled to the photo diode and the driving device. A photo current corresponding to a brightness of the OLED element is generated by the photo diode responsive to the OLED element illuminating the photo diode such that a the voltage of the capacitor is adjusted by the photo current to control the current passing through the driving device, thus changing the illumination of the OLED element.

Abstract: An organic electroluminescent device is disclosed. A substrate comprises a control area and a sensitive area. A switch device and a driving device are disposed overlying the control area. A photo sensor is disposed overlying the sensitive area, wherein the photo sensor is a thin film transistor. An OLED element is disposed in the sensitive area and illuminating to the photo sensor. A capacitor coupled to the photo sensor and the driving device. A photo current corresponding to a brightness of the OLED element is generated by the photo sensor responsive to the OLED element illuminating the photo sensor such that a the voltage of the capacitor is adjusted by the photo current to control the current passing through the driving device, thus changing the illumination of the OLED element.

Abstract: In a method of passivating a semiconductor device with two types of transistors, e.g., NMOS and PMOS transistor, the semiconductor device is placed in a pressurized sealed chamber and at least two different passivating gases are introduced into the chamber. The two passivating gases can be selected to have one gas suitable for passivating PMOS transistors and the other gas suitable for NMOS transistors.

Abstract: Organic electroluminescent devices are disclosed. A representative device incorporates a substrate that comprises a control area and a sensitive area. A switch device and a driving device are disposed overlying the control area. A photo sensor is disposed overlying the sensitive area. An OLED element is disposed in the sensitive area and illuminating to the photo sensor. A capacitor is coupled to the photo sensor and the driving device, wherein a photo current corresponding to the brightness of the OLED element is generated in the photo sensor responsive to the OLED element illuminating the photo sensor such that a voltage of the capacitor is adjusted by the photo current to control the current passing through the driving device, thus changing the illumination of the OLED element.

Abstract: A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of the semiconductor layer. The first masking layer includes a material that provides a permeable barrier to a dopant. The semiconductor layer including the first region covered by the first masking layer is exposed to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking region.

Abstract: A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.

Abstract: To satisfy the different requirement of TFTs function as peripheral driving circuit and pixel switching device, the modified TFT structure with various thicknesses of gate insulating layers is disclosed. For the peripheral driving circuit, the thinner thickness of the gate-insulating layer is formed, the higher driving ability the TFT performs. However, for the pixel switching device, the thicker thickness of the gate insulating layer is formed, the better reliability the TFT has. The present invention provides a first TFT (peripheral driving circuit) comprising a first gate insulating layer and a second TFT (pixel switching device) comprising a first and second gate insulating layer. Thus, the gate insulating layer of the peripheral driving circuit has a thickness less then that of the pixel switching device.

Abstract: A thin film transistor (TFT) structure includes a substrate, a polysilicon structure including a plurality of channel regions, at least one lightly doped region and at least one heavily doped source/drain region, a plurality of gate structures, and an insulating layer formed between the gate structures and the polysilicon structure. The thickness of a first portion of the insulating layer under and between the gate structures is greater than the thickness of a second portion of the insulating layer adjacent to the first portion. At least one lightly doped region is formed under the first portion of the insulating layer and at least one heavily doped source/drain region is formed under the second portion of the insulating layer via the same doping procedure.

Abstract: A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.

Abstract: A top emission organic light emitting display with a reflective layer therein is provided. The reflective layer, a first electrode, an organic layer, and a transparent second electrode are subsequently formed on the substrate. When a bias voltage is applied to the first electrode and the transparent second electrode, the organic layer emits radiation. The reflective layer reflects radiation from the organic layer toward the transparent second electrode, and therefore the emission efficiency of the OLED increases.