Abstract: A method and an apparatus for forming a polycrystalline layer using laser annealing for preventing damage to the peripheral region of the substrate during laser annealing. The laser annealing comprises a shadow mask structure. When crystallizing an amorphous layer by laser annealing, the shadow mask structure shields the peripheral region of the amorphous layer from laser irradiation. A method for forming a polycrystalline layer using the laser annealing apparatus is also provided in the invention.

Abstract: A method of forming a semiconductor device. A first and a second semiconductor structures are formed. A semiconductor layer is provided. A first masking layer over a first region of the semiconductor layer is provided. The first masking layer comprises a material that provides a permeable barrier to dopant. The semiconductor layer, including the first region covered by the first masking layer, is exposed to a first dopant. The first region covered by the first masking layer is lightly doped with the first dopant in comparison to a second region not covered by the first masking layer.

Abstract: A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two second doped regions. The first doped region is disposed between the plurality of intrinsic regions. The plurality of intrinsic regions are linked together to form a connection structure via the first doped region, and the two second doped regions are disposed at both ends of the connection structure, respectively. The source and the drain regions are coupled to the two second doped regions disposed at both ends of the connection structure, respectively. The gate electrode is disposed over the plurality of intrinsic regions, such that the periphery of each of the plurality of intrinsic regions and the periphery of a corresponding gate electrode are substantially aligned with each other.

Abstract: This invention relates to a method for fabricating a color filter by using the theory of surface tension. The surface tension is very small when hydrophobic material is on hydrophobic surface and the surface tension is very large when hydrophobic material is on hydrophilic surface. It avoids to blurry with the printed hydrophobic color materials and can get fine color filter with excellent color reappearance when the surface of pixel area is a hydrophobic surface and the surface of non-pixel area is a hydrophilic surface. This invention comprises: forming a dielectric layer on substrate; forming a plurality of scan lines and a plurality of data lines on substrate to define a plurality of pixel areas and a non-pixel area; forming a hydrophobic surface on the plurality of pixel areas; forming a hydrophilic surface on the non-pixel area; and using ink-jet printing method to print the hydrophobic color materials on the plurality of areas.

Abstract: A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in which the first doped region is disposed between the channel region and the second doped region. A gate insulating layer formed overlying the active layer has a central region, a shielding region and an extending region. The shielding region is disposed between the central region and the extending region, the central region covers the channel region, the shielding region covers the first doped region, and the extending region covers the second doped region. The shielding region is thicker than the extending region. A gate layer is formed overlying the gate insulating layer, covers the central region and exposes the shielding region and the extending region.

Abstract: A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of the semiconductor layer. The first masking layer comprises a material that provides a permeable barrier to a dopant. The semiconductor layer including the first region covered by the first masking layer is exposed to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking region.

Abstract: A thin film transistor (TFT) structure includes a substrate, a polysilicon structure including a plurality of channel regions, at least one lightly doped region and at least one heavily doped source/drain region, a plurality of gate structures, and an insulating layer formed between the gate structures and the polysilicon structure. The thickness of a first portion of the insulating layer under and between the gate structures is greater than the thickness of a second portion of the insulating layer adjacent to the first portion. At least one lightly doped region is formed under the first portion of the insulating layer and at least one heavily doped source/drain region is formed under the second portion of the insulating layer via the same doping procedure.

Abstract: A fabrication method and substrate structure of polysilicon thin-film transistors uses a substrate structure that retards the temperature decreasing during annealing and crystallizing of the amorphous silicon so that the melted silicon has enough time to transform into larger polysilicon crystals with more uniform dimensions and a lower surface roughness.

Abstract: A driving circuit for display and the operating method thereof are provided. The driving circuit uses the data controller with multi-gray scale to make the color driving signal correspond to the related gray of the multi-gray scale, and uses the inverter to output the color output signal to a display to make the color output signal have more levels of color, such that it can achieve the aim of full color. As the invention does not require use of the memory and digital to analog converter, which consume large amounts of power, it can achieve the aim of saving power.

Abstract: A method of forming an encapsulation structure for an organic light-emitting device is disclosed. The method is applied to organic light-emitting devices (OLED) and performed in a single reaction chamber. The method includes steps of placing an organic light-emitting device into a plasma chamber, forming a first buffer layer on the organic light-emitting device, forming a first passivation layer on the first buffer layer, forming a second buffer layer on the first passivation layer, and forming a second passivation layer on the second buffer layer.

Abstract: This invention relates to a liquid crystal display (LCD) device having the best performance of contrast ratio and color saturation in the transmissive and reflective areas of color LCD by adjusting the thicknesses of two color filters on the lower and upper transparent substrates.

Abstract: An active matrix organic light emitting display and a method of forming the same. The AM-OLED including a substrate with a plurality of thin film transistors serving as driver circuits, a dielectric layer formed conformally on the substrate and the thin film. transistors, a first insulating layer formed on parts of the dielectric layer to define the exposed surface of the dielectric layer as a predetermined transparent electrode area, a transparent electrode formed conformally on the predetermined transparent electrode area, a second insulating layer formed on both sides of the transparent electrode to expose parts of surface of the transparent electrode, an organic electroluminescent layer formed on the transparent electrode, and a metal electrode formed on the organic electroluminescent layer. The insulating layer smoothes the transparent electrode surface enhancing the luminescent characteristics of the AM-OLED.

Abstract: A semiconductor method for a liquid crystal display that includes providing a substrate, providing a layer of insulating material over the substrate, depositing a layer of amorphous silicon over the layer of insulating material, crystallizing the layer of amorphous silicon to form a layer of polysilicon, treating the layer of polysilicon to change the properties of a surface of the layer of polysilicon, and smoothing the surface of the layer of polysilicon.

Abstract: A method of forming a liquid crystal panel is provided. A first substrate and a second substrate are provided. A sealant having an injection opening is formed between the first substrate and the second substrate. The sealant is fabricated using an etchant resistant material. Thereafter, liquid crystals are injected into the cavity bounded by the first substrate, the second substrate and the sealant through the injection opening. After sealing the injection opening, a substrate thickness reduction process is performed to reduce the thickness of the first substrate and the second substrate.

Abstract: This invention relates to a method for fabricating a color filter by forming photoresist or dielectric spacers on the non-pixel area to avoid to blurry with the printed hydrophobic color materials and can get fine color filter with excellent color reappearance. This invention comprises forming a dielectric layer on a substrate; forming a plurality of scan lines and a plurality of data lines on said substrate to define a plurality of pixel areas and a non-pixel area; forming a photoresist layer or a dielectric layer on said dielectric layer; patterning the photoresist layer or the dielectric layer for forming photoresist or dielectric spacers on the non-pixel area; and printing a color material on said plurality of pixel areas by inkjet printing method.

Abstract: This invention relates to a method for fabricating a color filter by using the theory of surface tension. The surface tension is very small when hydrophobic material is on hydrophobic surface and the surface tension is very large when hydrophobic material is on hydrophilic surface. It avoids to blurry with the printed hydrophobic color materials and can get fine color filter with excellent color reappearance when the surface of pixel area is a hydrophobic surface and the surface of non-pixel area is a hydrophilic surface. This invention comprises: forming a dielectric layer on substrate; forming a plurality of scan lines and a plurality of data lines on substrate to define a plurality of pixel areas and a non-pixel area; forming a hydrophobic surface on the plurality of pixel areas; forming a hydrophilic surface on the non-pixel area; and using ink-jet printing method to print the hydrophobic color materials on the plurality of areas.

Abstract: This invention relates to a liquid crystal display (LCD) device having the best performance of contrast ratio and color saturation in the transmissive and reflective areas of color LCD by adjusting the thicknesses of two color filters on the lower and upper transparent substrates.

Abstract: A liquid crystal display (LCD) of reduced reflection phenomenon is provided. The data lines and gate lines of the LCD have an anti-reflection layer thereon. The anti-reflection layer decreases ambient light reflection. Thus, the CONTRAST of the LCD is improved.

Abstract: A method and structure of low reflection liquid crystal display unit are provided. The structure includes a semiconductor layer, a first metal layer, and a second metal layer. The method includes forming a semiconductor layer, forming an insulator layer on the semiconductor layer, forming a first metal layer on the insulator layer, forming a dielectric layer on the first metal layer, and forming a second metal layer on the dielectric layer. The first and second metal layers are located over the semiconductor layer. The first and/or second metal layer is extended to cover a portion of or entire the semiconductor layer.

Abstract: An LCD panel is provided, the LCD panel having a substrate, a conductive layer positioned on the substrate, and a dielectric layer disposed on the surface of the conductive layer. First, a photoresist layer with an opening is formed on the dielectric layer. An etching process is then performed to form a contact hole along the opening. After that, a post treatment process is performed to form a protective layer to reduce damage on the conductive layer when the photoresist layer is stripped.