Abstract: A driving circuit for display and the operating method thereof are provided. The driving circuit uses the data controller with multi-gray scale to make the color driving signal correspond to the related gray of the multi-gray scale, and uses the inverter to output the color output signal to a display to make the color output signal have more levels of color, such that it can achieve the aim of full color. As the invention does not require use of the memory and digital to analog converter, which consume large amounts of power, it can achieve the aim of saving power.

Abstract: Array substrates for electroluminescent (EL) devices and methods of forming the same are disclosed. The array substrates for electroluminescent (EL) devices include a substrate with at least one thin film transistor formed thereon, covered by a planarization layer. A first dielectric passivation layer with a contact hole therein covers parts of the planarization layer and exposes a source/drain electrode of the thin film transistor. A transparent electrode covers a portion of the first electric passivation layer and fills the contact hole, and is partly exposed by a patterned second dielectric passivation formed thereon. A plurality of spacers covers a portion of the second dielectric passivation layer to define an organic electroluminescent area with an exposed transparent electrode. An organic electroluminescent layer covers the exposed transparent electrode, and an electrode covers the organic electroluminescent layer.

Abstract: A display panel with an anti-Newton ring structure is disclosed. The display panel includes a substrate with an array region and a display region defined thereon. A buffer layer is disposed on the substrate and at least one transistor is formed in the array region. The display panel further includes an anti-Newton ring structure substantially composed of a silicon layer on the buffer layer in the display region, at least one dielectric layer disposed on the anti-Newton ring structure, and a pixel electrode disposed on the dielectric layer in the display region.

Abstract: A method of passivating a semiconductor device with two types of transistors, e.g., NMOS and PMOS transistors, the semiconductor device is placed in a pressurized sealed chamber and at least two different passivating gases are introduced into the chamber. The two passivating gases can be selected to have one gas suitable for passivating PMOS transistors and the other gas suitable for NMOS transistors.

Abstract: A full-color active matrix organic electroluminescent device and fabrication method thereof. The full-color active matrix organic electroluminescent device includes a substrate with a plurality of TFTs, a buffer layer formed on the substrate beyond the TFTs, a color filter formed on the buffer layer, a flat layer formed on the entire surface of the color filter, a first electrode formed on the flat layer, an organic electroluminescent layer formed on the first electrode, and a second electrode formed on the organic electroluminescent layer, wherein the flat layer is formed by a low temperature thin film process.

Abstract: A method for making a thin film transistor (TFT) with a lightly doped region. The process of the invention is compatible with the currently common TFT manufacturing processes. A substrate with a photoresist layer thereon is subjected to two-step exposure with different exposure energies to form a full-through pattern and a non-through pattern after development. The same photoresist layer is subjected to two etching steps to form a gate region and an intra-gate region. The gate region and the intra-gate region are respectively doped with different dopant concentrations. Therefore, the number of times forming and exposing the photoresist layer is reduced.

Abstract: An active matrix organic light emitting display and a method of forming the same. The AM-OLED including a substrate with a plurality of thin film transistors serving as driver circuits, a dielectric layer formed conformally on the substrate and the thin film transistors, a first insulating layer formed on parts of the dielectric layer to define the exposed surface of the dielectric layer as a predetermined transparent electrode area, a transparent electrode formed conformally on the predetermined transparent electrode area, a second insulating layer formed on both sides of the transparent electrode to expose parts of surface of the transparent electrode, an organic electroluminescent layer formed on the transparent electrode, and a metal electrode formed on the organic electroluminescent layer. The insulating layer smoothes the transparent electrode surface enhancing the luminescent characteristics of the AM-OLED.

Abstract: A method for making a thin film transistor (TFT) with a lightly doped region. The process of the invention is compatible with the currently common TFT manufacturing processes. A substrate with a photoresist layer thereon is subjected to two-step exposure with different exposure energies to form a full-through pattern and a non-through pattern after development. The same photoresist layer is subjected to two etching steps to form a gate region and an intra-gate region. The gate region and the intra-gate region are respectively doped with different dopant concentrations. Therefore, the number of times forming and exposing the photoresist layer is reduced.

Abstract: A design approach for a panel including a luminiferous unit and a driving unit. The luminiferous unit comprises first and second color components respectively constituting first and second light component sources. First and second light components are emitted from the first and the second light component sources. The color of the first light component differs from that of the second light component. The design approach comprises defining a specific relationship according to a characteristic between the first and the second color components; and designing the driving unit according to the specific relationship.

Abstract: A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two second doped regions. The first doped region is disposed between the plurality of intrinsic regions. The plurality of intrinsic regions are linked together to form a connection structure via the first doped region, and the two second doped regions are disposed at both ends of the connection structure, respectively. The source and the drain regions are coupled to the two second doped regions disposed at both ends of the connection structure, respectively. The gate electrode is disposed over the plurality of intrinsic regions, such that the periphery of each of the plurality of intrinsic regions and the periphery of a corresponding gate electrode are substantially aligned with each other.

Abstract: A driving device for an active matrix OLED display is disclosed, wherein a pixel electrode is directly contact the substrate, and the pixel electrode is connected electrically to the drain of the thin-film transistor through a drain electrode. Such a device decreases a leakage current and increases emission efficiency. A method of manufacturing the driving device is also disclosed.

Abstract: The present invention provides an apparatus for refreshing a voltage data in a display pixel circuit and an organic light emitting diode display using the same. The voltage data is stored in a capacitor of the display pixel circuit. The apparatus includes a data refreshing circuit. The data refreshing circuit includes a voltage transmission terminal coupled to the capacitor, and a first input terminal for inputting a first control signal to control timing and/or period for reading and/or writing the voltage data.

Abstract: Serially connected thin film transistor (TFT) structure include an active layer shared by an N-type TFT region and a P-type TFT region. A contact hole is formed in an N/P junction between the N-type TFT region and the P-type TFT region and conductive carriers within an N-doped region at one end can be electrically connected to a P-doped region at the other end by a conductive layer formed in the contact hole, without formation of depletion regions at the N/P junction. Moreover, the N-type TFT region or the P-type TFT region is formed using the exposed gate insulating layer in mask regions on both sides of the gate electrode as ion implanting masks and lightly doped drain regions and source/drain regions are also simultaneously formed.

Abstract: A light-emitting device and the fabrication method thereof. A substrate is provided. A plurality of active elements are formed on the substrate, defining a plurality of pixel areas. A color filter is formed on the pixel areas. The surface of the color filter is planarized to reduce roughness. An electrode is formed on the color filter. An light-emitting layer is formed on the electrode. A second electrode is formed on the light-emitting layer.

Abstract: A method of improving a polysilicon film crystallinity in a sequential lateral solidification process is provided. A mask having a main pattern portion and a compensating pattern portion is provided. The main pattern portion defines a laser beam pattern scanning and transforming an amorphous silicon film into a polysilicon film. The compensating pattern portion adjacent to the main pattern portion adjusts the energy of the laser beam injected to the polysilicon film to improve the grain shape thereof.

Abstract: To satisfy the different requirement of TFTs function as peripheral driving circuit and pixel switching device, the modified TFT structure with various thicknesses of gate insulating layers is disclosed. For the peripheral driving circuit, the thinner thickness of the gate-insulating layer is formed, the higher driving ability the TFT performs. However, for the pixel switching device, the thicker thickness of the gate insulating layer is formed, the better reliability the TFT has. The present invention provides a first TFT (peripheral driving circuit) comprising a first gate insulating layer and a second TFT (pixel switching device) comprising a first and second gate insulating layer. Thus, the gate insulating layer of the peripheral driving circuit has a thickness less then that of the pixel switching device.

Abstract: A process for producing an active matrix organic light-emitting diode (AMOLED) display is provided. The process includes steps of providing a substrate; forming an active matrix structure having a first semiconductor layer on the substrate; and forming a driving circuit structure having a second semiconductor layer on the substrate wherein the grain size of the second semiconductor layer is larger than that of the first semiconductor layer. The planar display with improved uniform luminance generated from the process is also provided. It includes the substrate; the active matrix structure having the first semiconductor layer with smaller grain size; and the driving circuit structure having the second semiconductor with larger grain size.

Abstract: A dual-direction organic light-emitting diode (OLED) display structure. The dual-direction OLED display structure comprises an active matrix array substrate with a first color filter integrated thereon. A monochromatic organic light-emitting device is disposed on the active matrix array substrate. A transparent substrate is disposed on the monochromatic organic light emitting diode display. A second color filter is interposed between the transparent substrate and the monochromatic organic light-emitting device.

Abstract: An organic light-emitting device and method of fabricating the same. A substrate is provided. A first electrode is formed on the substrate. A light-emitting layer is disposed on the first electrode, and a second electrode is disposed on the light-emitting layer, wherein the first and second electrodes define a pixel area corresponding to an active light emitting area of the light-emitting layer. A light-shielding pattern is defined around the active light emitting area, to block stray light emitted by the light emitting-layer outside the active light emitting area.

Abstract: First, a substrate with at least one thin film transistor is provided. A protection layer and a planarization layer are sequentially formed on the substrate. Then, the planarization layer is patterned and an opening is formed in the planarization above the thin film transistor. An etching process is performed by using the planarization layer as a hard mask to form a first contact hole, which is extending through to the thin film transistor, in the protection layer. Then, the planarization layer surrounding the opening is partially removed to form a second contact hole in the planarization layer above the first contact hole. After that, a transparent conductive layer is formed on the surface of the planarization layer, the second contact hole, the first contact hole, partial contact plug and electrically connected to the thin film transistor via the first contact hole and the second contact hole.