Abstract: A multi-intelligence federated reinforcement learning (FRL)-based vehicle-road cooperative control system and method at the complex intersection use a vehicle-road cooperative control framework based on the Road Side Unit (RSU) static processing module and the vehicle-based dynamic processing module. The historical road information is supplied by the proposed RSU module. The Federated Twin Delayed Deep Deterministic policy gradient (FTD3) algorithm is proposed to connect the federated learning (FL) module and the reinforcement learning (RL) module. The FTD3 algorithm transmits only neural network parameters instead of vehicle samples to protect privacy. Firstly, FTD3 selects only specific networks for aggregation to reduce the communication cost. Secondly, FTD3 realizes the deep combination of FL and RL by aggregating target critic networks with smaller Q-values. Thirdly, RSU neural network participates in aggregation rather than training, and only shared global model parameters are used.

Abstract: A multi-intelligence federated reinforcement learning (FRL)-based vehicle-road cooperative control system and method at the complex intersection use a vehicle-road cooperative control framework based on the Road Side Unit (RSU) static processing module and the vehicle-based dynamic processing module. The historical road information is supplied by the proposed RSU module. The Federated Twin Delayed Deep Deterministic policy gradient (FTD3) algorithm is proposed to connect the federated learning (FL) module and the reinforcement learning (RL) module. The FTD3 algorithm transmits only neural network parameters instead of vehicle samples to protect privacy. Firstly, FTD3 selects only specific networks for aggregation to reduce the communication cost. Secondly, FTD3 realizes the deep combination of FL and RL by aggregating target critic networks with smaller Q-values. Thirdly, RSU neural network participates in aggregation rather than training, and only shared global model parameters are used.

Abstract: A display screen cover is arranged to correspond to an area array driving plate of a display screen, and the display screen cover includes a cover body and a polarization film assembly. The polarization film assembly is arranged on the back of the cover body, and the polarization film assembly is provided with polarization film through holes and polarization film sound transmission spaces. The polarization film through holes are arranged to correspond to light-emitting tubes of the area array driving plate, and the polarization film sound transmission spaces are arranged to correspond to sound transmission spaces of the area array driving plate. The cover body is provided with cover through holes and cover sound transmission spaces. The cover through holes are arranged to correspond to the polarization film through holes, and the cover sound transmission spaces are arranged to correspond to the polarization film sound transmission spaces.

Abstract: The present disclosure provides a lower electrode mechanism and a reaction chamber, the lower electrode mechanism includes a base for carrying a workpiece to be processed and a lower electrode chamber disposed under the base, the lower electrode chamber includes an electromagnetic shielding space and a non-electromagnetic shielding space isolated from each other, the chamber of the lower electrode chamber includes a first through hole and a second through hole, and the electromagnetic shielding space and the non-electromagnetic shielding space are respectively connected to outside through the first through hole and the second through hole to prevent a plurality of first components disposed in the electromagnetic shielding space from being interfered by a second component disposed in the non-electromagnetic shielding space.

Abstract: This invention is an extension adaptive lane keeping control method with variable vehicle speed, which is composed of the following steps: S1, establishing a three-degree-of-freedom dynamic model and a preview deviation expression; S2, performing the lane line fitting equation; S3, designing the upper layer ISTE extension controller; including: S3.1, establishing the control index (ISTE) extension sets; S3.2, dividing the control index (ISTE) domain boundaries; S3.3, calculating the control index (ISTE) association function; S3.4, establishing the upper layer extension controller decision; S4, designing the lower layer speed extension controller; S5, designing the lower layer deviation tracking extension controller; including: S5.1, extracting the lower layer deviation tracking extension feature quantity and dividing domain boundaries; S5.2, designing the lower layer extension controller correlation function; S5.3, performing the lower layer measurement mode identification; S5.

Abstract: A reaction chamber component includes a body made of a 5000-series aluminum alloy material and an oxide film layer disposed on a surface-to-be-covered of the body.

Abstract: The present disclosure provides a lower electrode mechanism and a reaction chamber, the lower electrode mechanism includes a base for carrying a workpiece to be processed and a lower electrode chamber disposed under the base, the lower electrode chamber includes an electromagnetic shielding space and a non-electromagnetic shielding space isolated from each other, the chamber of the lower electrode chamber includes a first through hole and a second through hole, and the electromagnetic shielding space and the non-electromagnetic shielding space are respectively connected to outside through the first through hole and the second through hole to prevent a plurality of first components disposed in the electromagnetic shielding space from being interfered by a second component disposed in the non-electromagnetic shielding space.

Abstract: A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space.

Abstract: A method for vapor deposition on a substrate in a vapor deposition system having a process space separated from a transfer space. The method disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space by way of a movement accommodating sealing material, and deposits a material on the substrate at either the first position or the second position.

Abstract: A method, computer readable medium, and system for treating a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system is described. A sealing device is disposed between a first chamber assembly configured to define the process space and a second chamber assembly configured to define the transfer space. When the sealing device is engaged, vacuum isolation is provided between the process space and the transfer space. The sealing device comprises two or more contact ridges with one or more pockets formed therebetween. When the sealing device is engaged between the first chamber assembly and the second chamber assembly, gas is trapped in the one or more pockets. This trapped gas assists the release of the sealing device upon disengagement of the sealing device between the first chamber assembly and the second chamber assembly.

Abstract: An annular groove (150) is formed in a lid (3) of a vacuum processing chamber (2) along the periphery of an opening serving as a gas passage. A metal seal (140), having an annular shape (O-ring shape) as a whole and having a double-layered structure, is provided in the groove (150). An annular recess (160) is formed outside the groove (150) in the cover (3) to surround the groove (150). An annular protrusion (170) corresponding to the recess (160) is formed on a flange portion (130), and a fitting mechanism (180) for fitting the protrusion (170) is formed in the recess (160).

Abstract: A method and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. Furthermore, the system includes a high conductance exhaust apparatus configured to be coupled to the process space, whereby particle contamination of the substrate processed in the deposition system is minimized. The exhaust apparatus comprises a pumping system located above the substrate and an evacuation duct, wherein the evacuation duct has an inlet located below the substrate plane.

Abstract: A method, computer readable medium, and system for treating a substrate in a process space of a vacuum processing system is described. A vacuum pump in fluid communication with the vacuum processing system and configured to evacuate the process space, while a process material supply system is pneumatically coupled to the vacuum processing system and configured to supply a process gas to the process space. Additionally, the vacuum pump is pneumatically coupled to the process supply system and configured to, at times, evacuate the process gas supply system.

Abstract: An ultraviolet-ray-assisted processing apparatus (10) for a semiconductor process includes a window disposed in a wall defining the process chamber (12) and to face a worktable (11), and configured to transmit ultraviolet rays. A light source (15) is disposed outside the process chamber (12) to face the window (20), and configured to emit ultraviolet rays. A supply system configured to supply a process gas in the process chamber (12) includes a head space (21) formed in the window (20) and which the process gas passes through, and a plurality of discharge holes (22) for discharging the process gas.

Abstract: A method, computer readable medium, and system for treating a substrate in a process space of a vacuum processing system is described. A vacuum pump in fluid communication with the vacuum processing system and configured to evacuate the process space, while a process material supply system is pneumatically coupled to the vacuum processing system and configured to supply a process gas to the process space. Additionally, the vacuum pump is pneumatically coupled to the process supply system and configured to, at times, evacuate the process gas supply system.

Abstract: A method and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. Furthermore, the system includes a high conductance exhaust apparatus configured to be coupled to the process space, whereby particle contamination of the substrate processed in the deposition system is minimized. The exhaust apparatus comprises a pumping system located above the substrate and an evacuation duct, wherein the evacuation duct has an inlet located below the substrate plane.

Abstract: A method, computer readable medium, and system for treating a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system is described. A sealing device is disposed between a first chamber assembly configured to define the process space and a second chamber assembly configured to define the transfer space. When the sealing device is engaged, vacuum isolation is provided between the process space and the transfer space. The sealing device comprises two or more contact ridges with one or more pockets formed therebetween. When the sealing device is engaged between the first chamber assembly and the second chamber assembly, gas is trapped in the one or more pockets. This trapped gas assists the release of the sealing device upon disengagement of the sealing device between the first chamber assembly and the second chamber assembly.

Abstract: A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space.