Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: A semiconductor structure includes a functional die, a dummy die, a redistribution structure, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The redistribution structure is disposed over and electrically connected to the functional die. The seal ring is disposed over the dummy die. The alignment mark is between the seal ring and the redistribution structure, wherein the alignment mark is electrically isolated from the dummy die, the redistribution structure and the seal ring. The insulating layer encapsulates the functional die and the dummy die.

Abstract: A semiconductor device is described. An isolation region is disposed on the substrate. A plurality of channels extend through the isolation region from the substrate. The channels including an active channel and an inactive channel. A dummy fin is disposed on the isolation region and between the active channel and the inactive channel. An active gate is disposed over the active channel and the inactive channel, and contacts the isolation region. A dielectric material extends through the active gate and contacts a top of the dummy fin. The inactive channel is a closest inactive channel to the dielectric material. A long axis of the active channel extends in a first direction. A long axis of the active gate extends in a second direction. The active channel extends in a third direction from the substrate. The dielectric material is closer to the inactive channel than to the active channel.

Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.

Abstract: An integrated circuit structure in which a gate overlies channel region in an active area of a first transistor. The first transistor includes a channel region, a source region and a drain region. A conductive contact is coupled to the drain region of the first transistor. A second transistor that includes a channel region, a source region a drain region is adjacent to the first transistor. The gate of the second transistor is spaced from the gate of the first transistor. A conductive via passes through an insulation layer to electrically connect to the gate of the second transistor. An expanded conductive via overlays both the conductive contact and the conductive via to electrically connect the drain of the first transistor to the gate of the second transistor.

Abstract: A foldable electronic device, including a first body, a second body, an air valve movably disposed in the first body, at least one triggering member, and a hinge connecting the first body and the second body, is provided. The first body has multiple openings respectively located at two opposite surfaces. The triggering member is movably disposed in the first body and has a part exposed outside the first body. The air valve and the triggering member are mutually on moving paths of each other. The first body and the second body are rotated to be folded or unfolded relative to each other by the hinge. A part of the triggering member is suitable for bearing a force such that the triggering member drives the air valve, so that the air valve opens or closes the openings.

Abstract: A computer-implemented system and method relate to certified defense against adversarial patch attacks. A set of one-mask images is generated using a first mask at a set of predetermined regions of a source image. The source image is obtained from a sensor. A set of one-mask predictions is generated, via a machine learning system, based on the set of one-mask images. A first one-mask image is extracted from the set of one-mask images. The first one-mask image is associated with a first one-mask prediction that is identified as a minority amongst the set of one-mask predictions. A set of two-mask images is generated by masking the first one-mask image using a set of second masks. The set of second masks include at least a first submask and a second submask in which a dimension of the first submask is less than a dimension of the first mask. A set of two-mask predictions is generated based on the set of two-mask images.

Abstract: Translating applications to a target language includes extracting program integrated information (PII) to be translated and creating translation context datasets based on interpretation of accessibility information associated with particular strings of PII. Translation pairs include PII and corresponding context datasets for context-based translation of application components. A two-stage index contains PII strings for first stage lookup and context datasets for distinguishing duplicate PII strings as a second stage lookup. Real-time translation is facilitated by the two-stage index, which is established by translation pairs and resulting translations.

Abstract: A system and method include dividing a source image into a plurality of source regions, which are portions of the source image that correspond to a plurality of grid regions. A mask is used to create a first masked region that masks a first source region and a first unmasked region that comprises a second source region. A first inpainted region is generated by inpainting the first masked region based on the second source region. Similarity data is generated based on a similarity assessment. A protected image is generated that includes at least (i) the first masked region at a first grid region when the similarity data indicates that the first source region is not similar to the first inpainted region and (ii) the first inpainted region at the first grid region when the similarity data indicates that the first source region is similar to the first inpainted region.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: The present invention provides a B7-H3 nanobody, the preparation method and use thereof. The B7-H3 nanobody comprises framework regions 1-4 (FR 1-4) and complementarity determining regions 1-3 (CDR 1-3), can specifically bind to B7-H3, and can be used for detecting B7-H3 molecules, and be used for the treatment of various malignant tumors with abnormal expression of B7-H3 molecule.

Abstract: A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A foot sensor and analysis device, which includes a pressure sensing layer arranged inside the insole and a sensing module installed inside the insole. The sensing module is electrically coupled with the pressure sensing layer for receiving and processing detected electronic signals, where sensing module includes an inductance coil to perform wireless charging to the battery. The pressure sensing layer and the sensing module are integrally formed inside the insole.

Abstract: The disclosure provides a control method of a display driver. The control method includes receiving address information and defining an IC address according to the address information. The IC address includes n bits representing k zones, and n and k are positive integers. The control method further includes receiving the IC address, a black frame data signal and a pulse-width modulation (PWM) signal, and turning on or off the plurality of LEDs in the corresponding zone according to toggle of bit in the black frame data signal. Each bit in the black frame data signal indicates that a plurality of LEDs in a zone among the k zones are turned on or off.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

Abstract: A substrate includes a first doped region having a first type dopant, and a second doped region having a second type dopant and adjacent to the first doped region. A stack is formed that includes first layers and second layers alternating with each other. The first and second layers each have a first and second semiconductor material, respectively. The second semiconductor material is different than the first semiconductor material. A mask element is formed that has an opening in a channel region over the second doped region. A top portion of the stack not covered by the mask element is recessed. The stack is then processed to form a first and a second transistors. The first transistor has a first number of first layers. The second transistor has a second number of first layers. The first number is greater than the second number.

Abstract: A method for manufacturing a package structure includes providing a carrier board; providing at least one die having a top surface, a bottom surface, and a side surface on the carrier board; and forming a protective layer to cover at least a portion of the side surface of the die. The die includes a substrate, a semiconductor layer, a gate structure, a source structure and a drain structure, at least one dielectric layer, and at least one pad. The semiconductor layer is disposed on the substrate. The gate structure is disposed on the semiconductor layer. The source and the drain structures are disposed on opposite sides of the gate structure. The dielectric layer covers the gate, source, and drain structures. The pad is disposed on the dielectric layer and penetrates through the dielectric layer to electrically contact with the gate, source or drain structure.