Abstract: The present disclosure provides monoclonal and recombinant anti-CDH17 antibodies (including CDH17 biparatopic and CDH17xCD3 bispecific antibodies and CDH17-binding fragments. Such antibodies and binding fragments are useful for the treatment of cancer, cither alone or in combination with other agents.

Abstract: Disclosed are an epitaxial structure of a semiconductor device, a manufacturing method, and a semiconductor device. The epitaxial structure includes a substrate and a semiconductor layer; the semiconductor layer includes a buffer layer; the buffer layer includes a first buffer subsection and a second buffer subsection which are connected to each other and arranged along a direction from a source preset region to a drain preset region, and a vertical projection on the substrate of the first buffer subsection overlaps with a vertical projection on the substrate of the source preset region, and a vertical projection on the substrate of the second buffer subsection overlaps with a vertical projection on the substrate of each of the gate preset region and the drain preset region; an ion implant concentration in the second buffer subsection is greater than or equal to an ion implant concentration in the first buffer subsection.

Abstract: Embodiments of the present disclosure provide an epitaxial structure of a semiconductor device and a method of manufacturing the same. The epitaxial structure includes a substrate, and an epitaxial layer located on a side of the substrate, the epitaxial layer including a nucleation layer located on a side of the substrate and a buffer layer located on a side of the nucleation layer away from the substrate, wherein a thickness of the buffer layer is inversely proportional to a thickness of the nucleation layer.

Abstract: The present disclosure discloses a dual output energy conversion device, modulation method, and power supply device which can enhance the bus voltage boosting capability of the conversion device by using a first electric energy storage module, so that it can be used in a wider input voltage range. A first conversion output circuit and a second conversion output circuit are set, and voltage stress of all switching tubes is reduced to half of the direct current bus voltage, which can greatly reduce the system EMI of the conversion device in high-frequency applications, and improve the power conversion efficiency of the device. The dual output energy conversion device only needs to realize the control of one-stage power conversion, and has a simple control structure.

Abstract: The present disclosure provides antibodies and antibody fragments thereof that bind to human CLDN6. The disclosed antibodies may be used in antibody-based immunotherapy methods to direct a cytotoxic response against, or to target CLDN6 expressing cancers for destruction by an antibody drug conjugates.

Abstract: The present disclosure provides antibodies and antibody fragments thereof that bind to IL-23p19. The disclosed antibodies and antibody fragments thereof can modulate a biological activity of the IL-23 receptor signaling axis and are therefore useful for the treatment of immune-mediated inflammatory disorders.

Abstract: A gate structure includes a gate portion and a field plate portion, a projection of a tail end point on a lower surface of the lower field plate sub-portion is located on a side, close to the first plane, of a projection of a start end point on a lower surface of an upper field plate sub-portion, and the start end point on the lower surface of the upper field plate sub-portion is coincidence with an end point where an upper surface of the lower field plate sub-portion is connected to the lower surface of the upper field plate sub-portion. In the gate structure of the present disclosure, the two adjacent field plate sub-portions are non-perpendicularly connected to each other, thereby achieving an effect of optimizing electric field distribution, thus improving reliability and stability of semiconductor devices.

Abstract: The present disclosure discloses a semiconductor device and a method for preparing the same. The semiconductor device includes a substrate, a doped epitaxial layer located on one side of the substrate, a channel layer located on one side of the doped epitaxial layer away from the substrate, a potential barrier layer located on one side of the channel layer away from the doped epitaxial layer, and a first electrode and a second electrode located on one side of the potential barrier layer away from the channel layer, wherein the first electrode penetrates the potential barrier layer, the channel layer and part of the doped epitaxial layer, the first electrode forms a Schottky contact with the channel layer, and a resistance of the part of the doped epitaxial layer in contact with the first electrode is greater than a resistance of the channel layer.

Abstract: The present disclosure discloses a semiconductor device, a method of manufacturing the same, and a semiconductor package structure. The semiconductor device including a substrate, a multilayer semiconductor layer located on one side of the substrate, in which a Two-Dimensional Electron Gas is formed, a first source, a first gate and a first drain located on one side of the multilayer semiconductor layer and located within an active region of the multilayer semiconductor layer, the first gate being located between the first source and the first drain, and a back surface gate contact electrode located on one side of the substrate away from the multilayer semiconductor layer, wherein the first gate is electrically connected to the back surface gate contact electrode. A signal is provided from the back surface of the semiconductor device to the first gate, to reduce the parasitic inductance and parasitic resistance caused by the device during the packaging process.

Abstract: Embodiments of the present disclosure disclose a semiconductor device including a plurality of sources, a plurality of gates, and a plurality of drains located in an active area. In the active area, the sources, the gates, and the drains are alternately arranged along a first direction, and along the first direction, the sources include two sources respectively closest to ends of the arrangement, and any one of the gates is located between one of the sources and one of the drains, a length of at least a source located at the center along the first direction is greater than lengths of sources located at both ends along the first direction. The semiconductor device further includes a plurality of rows of through holes extending through a substrate and a multilayer semiconductor layer, a plurality of rows of the through holes are arranged along the first direction, and an orthographic projection.

Abstract: The disclosure provides binding proteins that bind PD-L1 and CD137 (PD-L1/CD137 bispecific), binding proteins that bind PD-L1 and TGF? (PD-L1/TGF? bispecific), binding proteins that bind PD-L1, TGF?, and CD137 (PD-L1/TGF?/CD137 trispecific), and binding proteins that bind CD137, TGF?, and PD-L1 (CD137/TGF?/PD-L1 trispecific). The disclosure also provides pharmaceutical compositions comprising these binding proteins, and methods of their use to treat and/or prevent cancer.

Abstract: The disclosure discloses a high-viscosity, high-elasticity, and anti-aging composite modified asphalt and a preparation method thereof, belongs to the technical field of road engineering materials, and solves the technical problem that the comprehensive performance of an existing asphalt ultrathin wearing layer needs to be further improved so as to prolong the service life of a pavement surface layer and reduce the pavement maintenance costs. The composite modified asphalt is prepared from the following components in parts by mass: 100 parts of a matrix asphalt, 10 to 15 parts of a thermoplastic styrene-butadiene rubber, 5 to 8 parts of a tackifier, 0.5 to 1.5 parts of a plasticizer, 2 to 5 parts of a compatibilizer, 0.1 to 0.4 parts of a stabilizer, and 0.01 to 0.05 parts of an anti-aging agent. The composite modified asphalt prepared by the disclosure has the advantages of high elasticity, high viscosity, excellent aging resistance, etc.

Abstract: The present disclosure provides bispecific binding proteins and fragments thereof which bind to human CD137 and a tumor associated antigen (e.g., Claudin-6, Claudin 18.2, or Nectin-4), to polynucleotide sequences encoding these antibodies and to cells producing them. The disclosure further relates to therapeutic compositions comprising these antibodies, and to methods of their use for cancer detection, prognosis and antibody-based immunotherapy.

Abstract: Embodiments of the present disclosure disclose a semiconductor device and a manufacturing method thereof. The semiconductor device includes an active region and a passive region surrounding the active region. The semiconductor device further includes a substrate, a multi-layer semiconductor layer located on one side of the substrate, and at least one shielding structure located on one side of the substrate, the shielding structure being electrically connected to a preset potential, for forming an electric field or a zero electric field of the active region pointing toward the passive region.

Abstract: The disclosure discloses a high-viscosity, high-elasticity, and anti-aging composite modified asphalt and a preparation method thereof, solves the technical problem that the comprehensive performance of an existing asphalt ultrathin wearing layer needs to be further improved so as to prolong the service life of a pavement surface layer and reduce the pavement maintenance costs. The composite modified asphalt is prepared from the following components in parts by mass: 100 parts of a matrix asphalt, 10 to 15 parts of a thermoplastic styrene-butadiene rubber, 5 to 8 parts of a tackifier, 0.5 to 1.5 parts of a plasticizer, 2 to 5 parts of a compatilizer, 0.1 to 0.4 parts of a stabilizer, and 0.01 to 0.05 parts of an anti-aging agent. The composite modified asphalt prepared by the disclosure has the advantages of high elasticity, high viscosity, excellent aging resistance, etc.

Abstract: The present disclosure provides antibodies and antibody fragments thereof that bind to human TNFR2. The disclosed antibodies, inhibit the TNF-TNFR2 signaling axis and enhance cytokine secretion in T effector cells and are therefore useful for the treatment of cancer, either alone or in combination with other agents.

Abstract: The present disclosure discloses a dual output energy conversion device, modulation method, and power supply device which can enhance the bus voltage boosting capability of the conversion device by using a first electric energy storage module, so that it can be used in a wider input voltage range. A first conversion output circuit and a second conversion output circuit are set, and voltage stress of all switching tubes is reduced to half of the direct current bus voltage, which can greatly reduce the system EMI of the conversion device in high-frequency applications, and improve the power conversion efficiency of the device. The dual output energy conversion device only needs to realize the control of one-stage power conversion, and has a simple control structure.

Abstract: The present disclosure provides antibodies and antibody fragments thereof that bind to Nectin-4. Such antibodies and antibody fragments are useful for the treatment of cancer, either alone or in combination with other agents.

Abstract: Antibodies that specifically bind to the human tight junction molecule CLDN18.2 and have functional properties that make them suitable for use in antibody-based immunotherapies of a disease associated with aberrant expression of CLDN18.2 are disclosed.

Abstract: Embodiments of the present disclosure disclose a semiconductor device and a method for manufacturing the same. The semiconductor device includes an active region and a passive region, the semiconductor device further includes a substrate, a multilayer semiconductor layer, and a source, a gate and a drain, the gate being located between the source and the drain, wherein, in a first direction, the gate includes, in turn, a first end portion, an intermediate portion and a second end portion, the intermediate portion, the source and the drain all being located in the active region, and the first end portion and/or the second end portion extending into the passive region, and in a second direction, an extension width of a portion at least located in the passive region of the first end portion and/or the second end portion is greater than an extension width of the intermediate portion.