Patents by Inventor Yi Pei

Yi Pei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210017382
    Abstract: A method of preparing a thermoplastic composition is provided. The method includes the following steps. A polyetherimide or a polyphenylene sulfide is provided. A polyimide is provided, wherein the glass transition temperature of the polyimide is between 128° C. and 169° C., the 10% thermogravimetric loss temperature of the polyimide is between 490° C. and 534° C., and when the polyimide is dissolved in N-methyl-2-pyrrolidone and the solid content of the polyimide is 30 wt %, the viscosity of the polyimide is between 100 cP and 250 cP. A melt process is performed to mix the polyetherimide and the polyimide or mix the polyphenylene sulfide and the polyimide to form a thermoplastic composition. Further, a thermoplastic composition is also provided.
    Type: Application
    Filed: September 12, 2019
    Publication date: January 21, 2021
    Applicant: Taiwan Textile Research Institute
    Inventors: Shang-Chih Chou, Shao-Yen Chang, Chun-Hung Lin, Yuan-Pei Liao, Yi-Cang Lai
  • Patent number: 10847627
    Abstract: A semiconductor device comprises: a substrate; a semiconductor layer formed on the substrate; a source electrode, a drain electrode and a gate electrode between the source electrode and the drain electrode formed on the semiconductor layer; and a source field plate formed on the semiconductor layer. The source field plate sequentially comprises: a start portion electrically connected to the source electrode; a first intermediate portion spaced apart from the semiconductor layer with air therebetween; a second intermediate portion disposed between the gate electrode and the drain electrode in a horizontal direction, without air between the second intermediate portion and the semiconductor layer; and an end portion spaced apart from the semiconductor layer with air therebetween.
    Type: Grant
    Filed: February 17, 2016
    Date of Patent: November 24, 2020
    Assignee: DYNAX SEMICONDUCTOR, INC.
    Inventors: Naiqian Zhang, Feihang Liu, Xin Jin, Yi Pei, Xi Song
  • Patent number: 10845406
    Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the same, and relates to the field of semiconductor devices. The semiconductor device includes an active region, a test region and a passive region located outside the active region and the test region, wherein a standard device is formed in the active region, and a test device for testing performance parameters of the standard device is formed in the test region.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: November 24, 2020
    Assignee: DYNAX SEMICONDUCTOR, INC.
    Inventors: Naiqian Zhang, Jian Liu, Feihang Liu, Yi Pei
  • Publication number: 20200328133
    Abstract: Embodiments of the disclosure provide a semiconductor device, a semiconductor chip and a method of manufacturing a semiconductor device, wherein the semiconductor device, includes a substrate, a semiconductor layer formed on the substrate, a plurality of gates, drains, and a plurality of sources formed on a side of the semiconductor layer away from the substrate, the gates located between the sources and the drains, and the gates, sources, and drains located in an active region of the semiconductor device, wherein a gate pitch is formed between any two adjacent gates, the formed respective gate pitches include at least two unequal gate pitches, the maximum gate pitch of the respective gate pitches is within a first preset range determined according to a pitch of two gates at the two outermost ends in the semiconductor device in the gate length direction and a total number of gates of the semiconductor device.
    Type: Application
    Filed: April 25, 2019
    Publication date: October 15, 2020
    Inventors: Yi PEI, Gouchun KANG, Linlin SUN
  • Publication number: 20200321255
    Abstract: A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The antenna layer is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the antenna layer is contacted with an external energy source, and the induced charge is stored in the floating gate.
    Type: Application
    Filed: September 26, 2019
    Publication date: October 8, 2020
    Inventors: Burn-Jeng LIN, Chrong-Jung LIN, Ya-Chin KING, Yi-Pei TSAI
  • Patent number: 10778785
    Abstract: Cognitively detecting cloud services and their associated status of a Virtual Machine and/or Container in a cloud platform to predict availability of cloud services preferably including the status of the services, a service object health map, and a service health status. The outputs are preferably sent to a user for feedback, which is sent back to the cognitive service.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: September 15, 2020
    Assignee: International Business Machines Corporation
    Inventors: Hui Qing Shi, Wei Wang, Yi Bin Wang, Yuan Yuan, Ya Pei Zhou
  • Publication number: 20200274022
    Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.
    Type: Application
    Filed: May 11, 2020
    Publication date: August 27, 2020
    Inventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
  • Patent number: 10754668
    Abstract: This application discloses a media file presentation method, a client application, and a plug-in. The method includes: sending a media information obtaining request to a plug-in installed in the client application, so that the plug-in obtains first brief information and second brief information of a media file from a server based on the media information obtaining request; and receiving a notification message for the media file from the plug-in; and presenting the first brief information at a first presentation position according to the notification message, and then presenting the second brief information at a second presentation position, the media file being obtained and presented when an operation performed by a user on the second brief information is received.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: August 25, 2020
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Gang Xu, Ping Wang, Lin Pei, Dan Yang, Xian Jun Wang, Yi Xie
  • Publication number: 20200266372
    Abstract: A quantum dot light-emitting diode includes a substrate, an anode electrode layer, a cathode electrode layer, a light-emitting layer, and an electron blocking layer. The anode electrode layer is disposed on the substrate. The cathode electrode layer is disposed on the anode electrode layer. The light-emitting layer is disposed between the cathode electrode layer and the anode electrode layer. The light-emitting layer includes a plurality of first particles. The electron blocking layer is disposed between the light-emitting layer and the anode electrode layer. The electron blocking layer includes a plurality of second particles. The first particles and the second particles are quantum dots. A size of the second particles is smaller than a size of the first particles.
    Type: Application
    Filed: January 15, 2020
    Publication date: August 20, 2020
    Inventors: Ming-Cheng KUO, Yao-Shan CHANG, Po-Liang CHEN, Chin-Cheng TSAI, Yi-Ju HSIAO, Ya-Pei KUO
  • Patent number: 10749005
    Abstract: The present disclosure provides a semiconductor device and a method for manufacturing the same. A semiconductor device according to a performing mode includes a substrate, a semiconductor layer located on one side of the substrate, a source and a drain located on one side of the semiconductor layer away from the substrate, and a gate located between the source and the drain, and an isolation structure disposed on one side of the semiconductor layer away from the substrate, one end of the isolation structure being disposed at a side close to the source, and the other end being disposed at a side close to the drain and in direct contact with the surface layer of the semiconductor device, the isolation structure covering the gate or a part of the gate, the isolation structure being an integrally formed structure and forming a chamber with the semiconductor layer.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: August 18, 2020
    Assignee: DYNAX SEMICONDUCTOR, INC.
    Inventors: Yi Pei, Feihang Liu
  • Patent number: 10683487
    Abstract: A Myrmecridium flexuosum NUK-21, a novel lactose oxidase isolated from the Myrmecridium flexuosum NUK-21 and a method for conversion of lactose into lactobionic acid (LBA) by the novel lactose oxidase are disclosed herein. The Myrmecridium flexuosum NUK-21 produces high yields of the novel lactose oxidase and the novel lactose oxidase has higher reactivity and specificity of converting lactose into lactobionic acid.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: June 16, 2020
    Assignee: National University of Kaohsiung
    Inventors: Shuen-Fuh Lin, Cheng-Ke Li, Yi-Pei Chung
  • Patent number: 10686063
    Abstract: The present disclosure provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor layer, a source and a drain located on one side of the semiconductor layer, a blocking layer located on one side of the semiconductor layer, the blocking layer including silicide, wherein the distance between an interface at one side of the blocking layer close to the semiconductor layer and the semiconductor layer is equal to or more than 10 nm, and a gate located between the source and the drain, the gate penetrating through the blocking layer, the gate including a first conductive layer and a second conductive layer, the first conductive layer being close to the semiconductor layer, the second conductive layer being located on one side of the first conductive layer away from the semiconductor layer, and the first conductive layer including nickel.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: June 16, 2020
    Assignee: DYNAX SEMICONDUCTOR, INC.
    Inventors: Yi Pei, Chenggong Yin
  • Publication number: 20200184286
    Abstract: A smart medication identifying system is disclosed herein. It comprises a processing device including a first processing module, a scanning module electrically connected to the first processing module and a first reminding module electrically connected to the first processing module; a cloud storage device electrically connected to the processing device and having a storage module, a login module electrically connected to the storage module, and a medication information database electrically connected to the storage module; and a medication identifying device electrically connected to the processing device and the cloud storage device and having a second processing module, an image identifying module electrically connected to the second processing module and a second reminding module electrically connected to the second processing module.
    Type: Application
    Filed: June 28, 2019
    Publication date: June 11, 2020
    Inventors: WAN-JUNG CHANG, LIANG-BI CHEN, CHIA-HAO HSU, YI-DE YAN, ZHI-CHENG QIU, TZU-CHIN YANG, CHAO-YAN LIN, CHENG-PEI LIN
  • Patent number: 10672917
    Abstract: The present disclosure provides a schottky barrier rectifier, comprising: a communication layer; a drift layer provided on a side of the communication layer and forming a heterojunction structure together with the communication layer; anode metal provided on a side of the drift layer away from the communication layer; and cathode metal provided on a side of the communication layer away from the drift layer. The drift layer is provided with a first area, which extends in a direction of thickness thereof, between a surface of the drift layer away from the communication layer and a surface thereof close to the communication layer, the first are a containing a first metal element and the content of the first metal element in the first area changing in the direction of thickness. The rectifier of the present disclosure uses polarized charges formed by a heterojunction, and thus the breakdown voltage of devices may be improved.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: June 2, 2020
    Assignee: GPOWER SEMICONDUCTOR, INC.
    Inventors: Yi Pei, Qiang Liu
  • Patent number: 10651335
    Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.
    Type: Grant
    Filed: May 7, 2019
    Date of Patent: May 12, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
  • Patent number: 10601049
    Abstract: A battery includes an anode, a cathode, and an electrolyte disposed between the anode and the cathode. The anode includes a current collector and an interfacial layer disposed over the current collector, and the interfacial layer includes a polymer including dynamic bonds.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: March 24, 2020
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Zhenan Bao, Yi Cui, Guangyuan Zheng, Chao Wang, Jeffrey Lopez, Allen Pei
  • Publication number: 20200075562
    Abstract: A method includes forming a composite material layer over a carrier, the composite material layer including particles of a filler material incorporated into a base material, forming a set of through vias over a first side of the composite material layer, attaching a die over the first side of the composite material layer, the die being spaced apart from the set of through vias, forming a molding material over the first side of the composite material layer, the molding material least laterally encapsulating the die and the through vias of the set of through vias, forming a redistribution structure over the die and the molding material, the redistribution structure electrically connected to the through vias, forming openings in a second side of the composite material layer opposite the first side, and forming conductive connectors in the openings, the conductive connectors electrically connected to the through vias.
    Type: Application
    Filed: August 2, 2019
    Publication date: March 5, 2020
    Inventors: Chen-Hua Yu, Kuo Lung Pan, Tin-Hao Kuo, Hao-Yi Tsai, Hsiu-Jen Lin, Hao-Jan Pei, Ching-Hua Hsieh
  • Publication number: 20200058573
    Abstract: The present disclosure provides a heat dissipation structure of a semiconductor device and a semiconductor device, and it relates to a field of semiconductor technology. A heat dissipation structure of a semiconductor device according to an embodiment includes a first heat dissipation window formed on an upper surface of the heat dissipation structure at a side close to the semiconductor device, and at least one heat dissipation channel, the heat dissipation channel including an inflow channel and an outflow channel, transmitting a heat conducting medium to the first heat dissipation window via the inflow channel, the inflow channel including a first opening and a second opening, wherein the first opening is away from the first heat dissipation window, the second opening is close to the first heat dissipation window, and an opening area of the first opening is greater than an opening area of the second opening.
    Type: Application
    Filed: August 7, 2018
    Publication date: February 20, 2020
    Inventors: Chuanjia WU, Yi PEI
  • Patent number: 10558474
    Abstract: The present disclosure discloses a media information processing method, a mobile terminal, and a storage medium. The method includes: determining that a condition for presenting media information in a graphical interface of an application is satisfied; requesting media information and a control policy of the media information from a server; loading the control policy in the application, and determining that a form needs to be used in the media information to obtain information from a user; requesting a WebView page adapted to the form from the server, the WebView page being obtained by initializing a WebView template based on a customized parameter of the form; and presenting the media information in the graphical interface of the application, and loading the WebView page in the graphical interface of the application.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: February 11, 2020
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Gang Xu, Xianjun Wang, Xiaomin Yan, Dan Yang, Yi Xie, Feng Song, Lin Pei, Bin Zhou
  • Patent number: 10553747
    Abstract: A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.
    Type: Grant
    Filed: October 17, 2016
    Date of Patent: February 4, 2020
    Assignee: Epistar Corporation
    Inventors: Chih-Chiang Lu, Yi-Ming Chen, Chun-Yu Lin, Ching-Pei Lin, Chung-Hsun Chien, Chien-Fu Huang, Hao-Min Ku, Min-Hsun Hsieh, Tzu-Chieh Hsu