Abstract: The present disclosure discloses a semiconductor device and a method for preparing the same. The semiconductor device includes a substrate, a doped epitaxial layer located on one side of the substrate, a channel layer located on one side of the doped epitaxial layer away from the substrate, a potential barrier layer located on one side of the channel layer away from the doped epitaxial layer, and a first electrode and a second electrode located on one side of the potential barrier layer away from the channel layer, wherein the first electrode penetrates the potential barrier layer, the channel layer and part of the doped epitaxial layer, the first electrode forms a Schottky contact with the channel layer, and a resistance of the part of the doped epitaxial layer in contact with the first electrode is greater than a resistance of the channel layer.

Abstract: The present disclosure discloses a semiconductor device, a method of manufacturing the same, and a semiconductor package structure. The semiconductor device including a substrate, a multilayer semiconductor layer located on one side of the substrate, in which a Two-Dimensional Electron Gas is formed, a first source, a first gate and a first drain located on one side of the multilayer semiconductor layer and located within an active region of the multilayer semiconductor layer, the first gate being located between the first source and the first drain, and a back surface gate contact electrode located on one side of the substrate away from the multilayer semiconductor layer, wherein the first gate is electrically connected to the back surface gate contact electrode. A signal is provided from the back surface of the semiconductor device to the first gate, to reduce the parasitic inductance and parasitic resistance caused by the device during the packaging process.

Abstract: Embodiments of the present disclosure disclose a semiconductor device including a plurality of sources, a plurality of gates, and a plurality of drains located in an active area. In the active area, the sources, the gates, and the drains are alternately arranged along a first direction, and along the first direction, the sources include two sources respectively closest to ends of the arrangement, and any one of the gates is located between one of the sources and one of the drains, a length of at least a source located at the center along the first direction is greater than lengths of sources located at both ends along the first direction. The semiconductor device further includes a plurality of rows of through holes extending through a substrate and a multilayer semiconductor layer, a plurality of rows of the through holes are arranged along the first direction, and an orthographic projection.

Abstract: The disclosure provides binding proteins that bind PD-L1 and CD137 (PD-L1/CD137 bispecific), binding proteins that bind PD-L1 and TGF? (PD-L1/TGF? bispecific), binding proteins that bind PD-L1, TGF?, and CD137 (PD-L1/TGF?/CD137 trispecific), and binding proteins that bind CD137, TGF?, and PD-L1 (CD137/TGF?/PD-L1 trispecific). The disclosure also provides pharmaceutical compositions comprising these binding proteins, and methods of their use to treat and/or prevent cancer.

Abstract: The disclosure discloses a high-viscosity, high-elasticity, and anti-aging composite modified asphalt and a preparation method thereof, belongs to the technical field of road engineering materials, and solves the technical problem that the comprehensive performance of an existing asphalt ultrathin wearing layer needs to be further improved so as to prolong the service life of a pavement surface layer and reduce the pavement maintenance costs. The composite modified asphalt is prepared from the following components in parts by mass: 100 parts of a matrix asphalt, 10 to 15 parts of a thermoplastic styrene-butadiene rubber, 5 to 8 parts of a tackifier, 0.5 to 1.5 parts of a plasticizer, 2 to 5 parts of a compatibilizer, 0.1 to 0.4 parts of a stabilizer, and 0.01 to 0.05 parts of an anti-aging agent. The composite modified asphalt prepared by the disclosure has the advantages of high elasticity, high viscosity, excellent aging resistance, etc.

Abstract: The present disclosure provides bispecific binding proteins and fragments thereof which bind to human CD137 and a tumor associated antigen (e.g., Claudin-6, Claudin 18.2, or Nectin-4), to polynucleotide sequences encoding these antibodies and to cells producing them. The disclosure further relates to therapeutic compositions comprising these antibodies, and to methods of their use for cancer detection, prognosis and antibody-based immunotherapy.

Abstract: Embodiments of the present disclosure disclose a semiconductor device and a manufacturing method thereof. The semiconductor device includes an active region and a passive region surrounding the active region. The semiconductor device further includes a substrate, a multi-layer semiconductor layer located on one side of the substrate, and at least one shielding structure located on one side of the substrate, the shielding structure being electrically connected to a preset potential, for forming an electric field or a zero electric field of the active region pointing toward the passive region.

Abstract: A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an energy sensing film. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The energy sensing film is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the energy sensing film is contacted with an external energy source, and the induced charge is stored in the floating gate.

Abstract: The disclosure discloses a high-viscosity, high-elasticity, and anti-aging composite modified asphalt and a preparation method thereof, solves the technical problem that the comprehensive performance of an existing asphalt ultrathin wearing layer needs to be further improved so as to prolong the service life of a pavement surface layer and reduce the pavement maintenance costs. The composite modified asphalt is prepared from the following components in parts by mass: 100 parts of a matrix asphalt, 10 to 15 parts of a thermoplastic styrene-butadiene rubber, 5 to 8 parts of a tackifier, 0.5 to 1.5 parts of a plasticizer, 2 to 5 parts of a compatilizer, 0.1 to 0.4 parts of a stabilizer, and 0.01 to 0.05 parts of an anti-aging agent. The composite modified asphalt prepared by the disclosure has the advantages of high elasticity, high viscosity, excellent aging resistance, etc.

Abstract: The present disclosure provides antibodies and antibody fragments thereof that bind to human TNFR2. The disclosed antibodies, inhibit the TNF-TNFR2 signaling axis and enhance cytokine secretion in T effector cells and are therefore useful for the treatment of cancer, either alone or in combination with other agents.

Abstract: The present disclosure discloses a dual output energy conversion device, modulation method, and power supply device which can enhance the bus voltage boosting capability of the conversion device by using a first electric energy storage module, so that it can be used in a wider input voltage range. A first conversion output circuit and a second conversion output circuit are set, and voltage stress of all switching tubes is reduced to half of the direct current bus voltage, which can greatly reduce the system EMI of the conversion device in high-frequency applications, and improve the power conversion efficiency of the device. The dual output energy conversion device only needs to realize the control of one-stage power conversion, and has a simple control structure.

Abstract: The present disclosure provides antibodies and antibody fragments thereof that bind to Nectin-4. Such antibodies and antibody fragments are useful for the treatment of cancer, either alone or in combination with other agents.

Abstract: Antibodies that specifically bind to the human tight junction molecule CLDN18.2 and have functional properties that make them suitable for use in antibody-based immunotherapies of a disease associated with aberrant expression of CLDN18.2 are disclosed.

Abstract: Embodiments of the present disclosure disclose a semiconductor device and a method for manufacturing the same. The semiconductor device includes an active region and a passive region, the semiconductor device further includes a substrate, a multilayer semiconductor layer, and a source, a gate and a drain, the gate being located between the source and the drain, wherein, in a first direction, the gate includes, in turn, a first end portion, an intermediate portion and a second end portion, the intermediate portion, the source and the drain all being located in the active region, and the first end portion and/or the second end portion extending into the passive region, and in a second direction, an extension width of a portion at least located in the passive region of the first end portion and/or the second end portion is greater than an extension width of the intermediate portion.

Abstract: Embodiments of the present disclosure provide an epitaxial structure of a semiconductor device and a method of manufacturing the same. The epitaxial structure includes a substrate, and an epitaxial layer located on a side of the substrate, the epitaxial layer including a nucleation layer located on a side of the substrate and a buffer layer located on a side of the nucleation layer away from the substrate, wherein a thickness of the buffer layer is inversely proportional to a thickness of the nucleation layer.

Abstract: Disclosed are a semiconductor device and a preparation method thereof. The semiconductor device includes a substrate; a multilayer semiconductor layer located on a side of the substrate; and a source, a gate, a drain and a field plate structure located on a side, away from the substrate, of the multilayer semiconductor layer. The field plate structure includes a main body portion and a first extension portion; the main body portion is located between the gate and the drain; the first extension portion is connected to the main body portion and is located on a side, away from the multilayer semiconductor layer, of the gate; and the first extension portion at least partially overlaps the gate. By adopting the above technical solution, the probability of the breakdown, which occurs at the side of the gate near the drain, may be reduced, thereby increasing the reliability of semiconductor devices.

Abstract: An electrical connection base providing support for heavy expansion cards includes a pedestal and a supporting element. A socket is defined on the pedestal. The supporting element includes installation and support portion. A through hole is defined on the installation portion, which is portion set outside the pedestal, the pedestal entering the through hole. The support portion has a first slot, and the first slot runs through the end of the support portion away from the installation portion. The portion of the expansion card or other element plugged into the socket and outside the pedestal is inserted into the first slot. The groove wall of the first slot is in contact with the element, the support portion thereby supports the card or element and prevents strain and deformation.

Abstract: Antibodies that specifically bind to the human tight junction molecule CLDN18.2 and have functional properties that make them suitable for use in antibody-based immunotherapies of a disease associated with aberrant expression of CLDN18.2 are disclosed.

Abstract: Disclosed are an epitaxial structure of a semiconductor device, a manufacturing method, and a semiconductor device. The epitaxial structure includes a substrate and a semiconductor layer; the semiconductor layer includes a buffer layer; the buffer layer includes a first buffer subsection and a second buffer subsection which are connected to each other and arranged along a direction from a source preset region to a drain preset region, and a vertical projection on the substrate of the first buffer subsection overlaps with a vertical projection on the substrate of the source preset region, and a vertical projection on the substrate of the second buffer subsection overlaps with a vertical projection on the substrate of each of the gate preset region and the drain preset region; an ion implant concentration in the second buffer subsection is greater than or equal to an ion implant concentration in the first buffer subsection.

Abstract: Embodiments of the disclosure provide a semiconductor device, a semiconductor chip and a method of manufacturing a semiconductor device, wherein the semiconductor device, includes a substrate, a semiconductor layer formed on the substrate, a plurality of gates, drains, and a plurality of sources formed on a side of the semiconductor layer away from the substrate, the gates located between the sources and the drains, and the gates, sources, and drains located in an active region of the semiconductor device, wherein a gate pitch is formed between any two adjacent gates, the formed respective gate pitches include at least two unequal gate pitches, the maximum gate pitch of the respective gate pitches is within a first preset range determined according to a pitch of two gates at the two outermost ends in the semiconductor device in the gate length direction and a total number of gates of the semiconductor device.