Abstract: Disclosed are an epitaxial structure of a semiconductor device, a manufacturing method, and a semiconductor device. The epitaxial structure includes a substrate and a semiconductor layer; the semiconductor layer includes a buffer layer; the buffer layer includes a first buffer subsection and a second buffer subsection which are connected to each other and arranged along a direction from a source preset region to a drain preset region, and a vertical projection on the substrate of the first buffer subsection overlaps with a vertical projection on the substrate of the source preset region, and a vertical projection on the substrate of the second buffer subsection overlaps with a vertical projection on the substrate of each of the gate preset region and the drain preset region; an ion implant concentration in the second buffer subsection is greater than or equal to an ion implant concentration in the first buffer subsection.

Abstract: Embodiments of the disclosure provide a semiconductor device, a semiconductor chip and a method of manufacturing a semiconductor device, wherein the semiconductor device, includes a substrate, a semiconductor layer formed on the substrate, a plurality of gates, drains, and a plurality of sources formed on a side of the semiconductor layer away from the substrate, the gates located between the sources and the drains, and the gates, sources, and drains located in an active region of the semiconductor device, wherein a gate pitch is formed between any two adjacent gates, the formed respective gate pitches include at least two unequal gate pitches, the maximum gate pitch of the respective gate pitches is within a first preset range determined according to a pitch of two gates at the two outermost ends in the semiconductor device in the gate length direction and a total number of gates of the semiconductor device.

Abstract: The present disclosure provides antibodies and antibody fragments thereof that bind to IL-23p19. The disclosed antibodies and antibody fragments thereof can modulate a biological activity of the IL-23 receptor signaling axis and are therefore useful for the treatment of immune-mediated inflammatory disorders.

Abstract: An apparatus for assembling screws, the apparatus includes a rack and a holder. The holder is arranged on the rack. The holder includes a convex and an opening. The opening is communicated with the convex, the screw is capable of moving in the opening and latched to and fasten to the convex.

Abstract: The present disclosure discloses a semiconductor device and a method for preparing the same. The semiconductor device includes a substrate, a doped epitaxial layer located on one side of the substrate, a channel layer located on one side of the doped epitaxial layer away from the substrate, a potential barrier layer located on one side of the channel layer away from the doped epitaxial layer, and a first electrode and a second electrode located on one side of the potential barrier layer away from the channel layer, wherein the first electrode penetrates the potential barrier layer, the channel layer and part of the doped epitaxial layer, the first electrode forms a Schottky contact with the channel layer, and a resistance of the part of the doped epitaxial layer in contact with the first electrode is greater than a resistance of the channel layer.

Abstract: Antibodies that specifically bind to the human tight junction molecule CLDN18.2 and have functional properties that make them suitable for use in antibody-based immunotherapies of a disease associated with aberrant expression of CLDN18.2 are disclosed.

Abstract: The present disclosure provides antibodies and antibody fragments thereof that bind to IL-23p19. The disclosed antibodies and antibody fragments thereof can modulate a biological activity of the IL-23 receptor signaling axis and are therefore useful for the treatment of immune-mediated inflammatory disorders.

Abstract: The present disclosure discloses a semiconductor device, a method of manufacturing the same, and a semiconductor package structure. The semiconductor device including a substrate, a multilayer semiconductor layer located on one side of the substrate, in which a Two-Dimensional Electron Gas is formed, a first source, a first gate and a first drain located on one side of the multilayer semiconductor layer and located within an active region of the multilayer semiconductor layer, the first gate being located between the first source and the first drain, and a back surface gate contact electrode located on one side of the substrate away from the multilayer semiconductor layer, wherein the first gate is electrically connected to the back surface gate contact electrode. A signal is provided from the back surface of the semiconductor device to the first gate, to reduce the parasitic inductance and parasitic resistance caused by the device during the packaging process.

Abstract: A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The antenna layer is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the antenna layer is contacted with an external energy source, and the induced charge is stored in the floating gate.

Abstract: An unlocking bracket includes a fastener and an unlocking member. The fastener includes a fixing case and a support rod provided on the fixing case. The support rod is configured to bear on a connector. The fixing case is configured to sleeve on the connector. The unlocking member includes a cantilever and an unlocking block. The cantilever is configured to be rotationally mounted on the fixing case. The unlocking block is configured to abut a locking clip of the connector. The cantilever is configured to drive the unlocking block to rotate to push a locking clip of the connector.

Abstract: Antibodies that specifically bind to the human tight junction molecule CLDN18.2 and have functional properties that make them suitable for use in antibody-based immunotherapies of a disease associated with aberrant expression of CLDN18.2 are disclosed.

Abstract: An unlocking bracket includes a fastener and an unlocking member. The fastener includes a fixing case and a support rod provided on the fixing case. The support rod is configured to bear on a connector. The fixing case is configured to sleeve on the connector. The unlocking member includes a cantilever and an unlocking block. The cantilever is configured to be rotationally mounted on the fixing case. The unlocking block is configured to abut a locking clip of the connector. The cantilever is configured to drive the unlocking block to rotate to push a locking clip of the connector.

Abstract: The present application discloses a vulnerability detection method and apparatus, an electronic device and a storage medium, and relates to the field of vulnerability processing and the like. The specific implementation is as follows: implanting an agent into a target object, and performing, by the agent, preprocessing of taint tracking on actual running information of the target object, to obtain target running information to be loaded after the preprocessing; executing the target running information till a taint monitoring point for the taint tracking, to obtain taint information and probe information; and transmitting the taint information and the probe information to a scanning end, to construct, at the scanning end, a vulnerability detection request for vulnerability detection, according to the taint information and the probe information.

Abstract: Embodiments of the disclosure provide a semiconductor device, a semiconductor chip and a method of manufacturing a semiconductor device, wherein the semiconductor device, includes a substrate, a semiconductor layer formed on the substrate, a plurality of gates, drains, and a plurality of sources formed on a side of the semiconductor layer away from the substrate, the gates located between the sources and the drains, and the gates, sources, and drains located in an active region of the semiconductor device, wherein a gate pitch is formed between any two adjacent gates, the formed respective gate pitches include at least two unequal gate pitches, the maximum gate pitch of the respective gate pitches is within a first preset range determined according to a pitch of two gates at the two outermost ends in the semiconductor device in the gate length direction and a total number of gates of the semiconductor device.

Abstract: The present disclosure provides antibodies and antibody fragments thereof that bind to IL-23p19. The disclosed antibodies and antibody fragments thereof can modulate a biological activity of the IL-23 receptor signaling axis and are therefore useful for the treatment of immune-mediated inflammatory disorders.

Abstract: A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The antenna layer is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the antenna layer is contacted with an external energy source, and the induced charge is stored in the floating gate.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the same, and relates to the field of semiconductor devices. The semiconductor device includes an active region, a test region and a passive region located outside the active region and the test region, wherein a standard device is formed in the active region, and a test device for testing performance parameters of the standard device is formed in the test region.

Abstract: A semiconductor device comprises: a substrate; a semiconductor layer formed on the substrate; a source electrode, a drain electrode and a gate electrode between the source electrode and the drain electrode formed on the semiconductor layer; and a source field plate formed on the semiconductor layer. The source field plate sequentially comprises: a start portion electrically connected to the source electrode; a first intermediate portion spaced apart from the semiconductor layer with air therebetween; a second intermediate portion disposed between the gate electrode and the drain electrode in a horizontal direction, without air between the second intermediate portion and the semiconductor layer; and an end portion spaced apart from the semiconductor layer with air therebetween.

Abstract: Embodiments of the disclosure provide a semiconductor device, a semiconductor chip and a method of manufacturing a semiconductor device, wherein the semiconductor device, includes a substrate, a semiconductor layer formed on the substrate, a plurality of gates, drains, and a plurality of sources formed on a side of the semiconductor layer away from the substrate, the gates located between the sources and the drains, and the gates, sources, and drains located in an active region of the semiconductor device, wherein a gate pitch is formed between any two adjacent gates, the formed respective gate pitches include at least two unequal gate pitches, the maximum gate pitch of the respective gate pitches is within a first preset range determined according to a pitch of two gates at the two outermost ends in the semiconductor device in the gate length direction and a total number of gates of the semiconductor device.

Abstract: A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The antenna layer is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the antenna layer is contacted with an external energy source, and the induced charge is stored in the floating gate.