Abstract: A method of making a biochip includes forming an opening extending completely through a fluidic substrate. Forming the opening includes defining a plurality of sidewalls on the fluidic substrate, wherein the plurality of sidewalls defines a channel in fluid communication with the opening, and each of the plurality of sidewalls comprises polydimethylsiloxane (PDMS). The method further includes coating a surface of the fluidic substrate with a silicon oxide coating wherein, the silicon oxide coating is between adjacent sidewalls of the plurality of sidewalls. The method further includes bonding the fluidic substrate to a detection substrate.

Abstract: A transceiver includes a RF modulator, a filter circuit, a control circuit and a first DC offset compensation circuit. During a first calibration period, the control circuit controls the filter circuit to be connected to the RF modulator with a first phase sequence, such that the RF modulator outputs a first radio frequency signal. During a second calibration period, the control circuit controls the filter circuit to be connected to the RF modulator with a second phase sequence, such that the RF modulator outputs a second radio frequency signal. The second phase sequence is inverted with the first phase sequence. The control circuit is further configured to calculate a first DC offset generated from the filter circuit, and to control the first DC offset compensation circuit to compensate the first DC offset generated from the filter circuit.

Abstract: An entropy generator includes a physically unclonable function, a dynamic entropy source and an entropy enhancement engine. The physically unclonable function is used to provide a truly random static entropy. The dynamic entropy source is used to generate a dynamic entropy. The entropy enhancement engine is coupled to the physically unclonable function and the dynamic entropy source, and is used to generate an enhanced entropy according to the truly random static entropy and the dynamic entropy. The expected hamming distance is an expected value of a hamming distance between a truly random static entropy and another truly random static entropy provided by a physically unclonable function (PUF).

Abstract: A built-in self-test (BIST) circuit and a BIST method for Physical Unclonable Function (PUF) quality check are provided. The BIST circuit may include a PUF array, a readout circuit coupled to the PUF array, and a first comparing circuit coupled to the readout circuit. The PUF array may include a plurality of PUF units, wherein each of the PUF units includes a first cell and a second cell. The readout circuit may be configured to output an output bit from the first cell and output a parity bit from the second cell. The first comparing circuit may be configured to compare an output string with a parity string to generate a parity check result, wherein the output string includes output bits respectively read from selected PUF units of the PUF units, and the parity string includes parity bits read from the selected PUF units.

Abstract: Constructing a feature segment-based ensemble can include generating a data structure for each element of an initial set of training data. Multiple strongly correlated features of the elements can be identified as well as weakly correlated features. For each strongly correlated feature, a feature segmentation training set can be generated, each training set's elements each containing one of the strongly correlated features and excluding other strongly correlated features. One or more machine learning algorithms can be selected from a software library. The one or more machine learning algorithms can be applied to the feature segmentation training sets to train multiple machine learning models. Each machine learning model that improves the predictive accuracy of the feature segment-based ensemble can be integrated in the feature segment-based ensemble.

Abstract: A biochip including a fluidic substrate having an opening extending completely through the fluidic substrate. The biochip further includes a silicon oxide coating on the fluidic substrate. The biochip further includes a plurality of sidewalls on the fluidic substrate, wherein the plurality of sidewalls defines a channel in fluid communication with the opening, the silicon oxide coating is between adjacent sidewalls of the plurality of sidewalls, and each of the plurality of sidewalls comprises polydimethylsiloxane (PDMS). The biochip further includes a detection substrate spaced from the fluidic substrate.

Abstract: A method includes mounting an integrated electro-microfluidic probe card to a device area on a bio-sensor device wafer, wherein the electro-microfluidic probe card has a first major surface and a second major surface opposite the first major surface. The method further includes electrically connecting at least one electronic probe tip extending from the first major surface to a corresponding conductive area of the device area. The method further includes stamping a test fluid onto the device area. The method further includes measuring via the at least one electronic probe tip a first electrical property of one or more bio-FETs of the device area based on the test fluid.

Abstract: A method, system, and computer for balance weighted voting. The method may comprise receiving, by a network interface, a scoring request. The method may further comprise, by a processing unit in response to the scoring request, generating a plurality of scores using a plurality of models. normalizing the plurality of scores, calculating an evaluation-based weighting factor from a first subset of the normalized scores, calculating a prediction-based based weighting factor from a second subset of the normalized scores, and calculating a balanced weighting predictor from the evaluation-based weighting factor and the prediction-based weighting factor. The method may further comprise returning, by the network interface, the balanced weighting predictor as an ensemble score for the scoring request.

Abstract: A method of forming a nanostructure field-effect transistor (nano-FET) device includes: forming a fin structure that includes a fin and alternating layers of a first semiconductor material and a second semiconductor material overlying the fin; forming a dummy gate structure over the fin structure; forming source/drain regions over the fin structure on opposing sides of the dummy gate structure; removing the dummy gate structure to expose the first and second semiconductor materials under the dummy gate structure; selectively removing the exposed first semiconductor material, where after the selectively removing, the exposed second semiconductor material remains to form nanostructures, where different surfaces of the nanostructures have different atomic densities of the second semiconductor material; forming a gate dielectric layer around the nanostructures, thicknesses of the gate dielectric layer on the different surfaces of the nanostructures being formed substantially the same; and forming a gate electrode

Abstract: A key storage device comprising a first key unit and a second key unit is disclosed. The first key unit is configured to output a first logic value through, comprising: a first setting circuit configured to output a first setting voltage; and a first inverter comprising a first output transistor having a first threshold voltage, configured to receive the first setting voltage and generate the first logic value. The second key unit is configured to output a second logic value through a second node, comprising: a second setting circuit configured to output a second setting voltage; and a second inverter comprising a second output transistor having a second threshold voltage, configured to receive the second setting voltage and generate the second logic value. The absolute value of first threshold voltage is lower than which of the second threshold voltage. The first setting voltage is higher than the second setting voltage.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

Abstract: An operational amplifier includes a differential amplifier circuit and a common mode feedback circuit. The differential amplifier circuit includes a bias circuit, an amplifier circuit, and a load circuit. The bias circuit generates a first operation voltage. The amplifier circuit receives a pair of input signals, and generates a pair of output signals according to the input signals and the first operation voltage. The load circuit is coupled to the amplifier circuit. The common mode feedback circuit generates at least one common mode feedback voltage based on a common mode voltage and a reference voltage. The common mode voltage is associated with the output signals. The at least one common mode feedback voltage is for controlling the bias circuit and the load circuit, to control a direct current (DC) voltage level of the differential amplifier circuit.

Abstract: An approach is provided in which the approach trains a first machine learning model using a set of features corresponding to a set of build blocks. The set of build blocks include at least one dependency build block and at least one artifact package build block. The approach predicts a set of risk values of the set of build blocks using the trained first machine learning model, and marks at least one of the build blocks as a bottleneck in response to comparing the set of risk values against a risk threshold.

Abstract: A method of operating an integrated circuit includes using a first switching device to couple a bio-sensing device to a first signal path, generating, using the bio-sensing device, a bio-sensing signal on the first signal path in response to an electrical characteristic of a sensing film, using a second switching device to couple a temperature-sensing device to a second signal path, and generating, using the temperature-sensing device, a temperature-sensing signal on the second signal path in response to a temperature of the sensing film. The first and second switching devices, the bio-sensing device, the temperature-sensing device, and the sensing film are components of a sensing pixel of a plurality of sensing pixels of the integrated circuit.

Abstract: An integrated circuit includes two or more rows of heating elements, two or more columns of heating elements, and a plurality of sensing areas. Each sensing area is between two adjacent rows of the rows of heating elements and between two adjacent columns of the columns of heating elements and includes a bio-sensing device and a temperature-sensing device.

Abstract: An integrated circuit includes two or more rows of heating elements, two or more columns of heating elements, and a plurality of sensing circuits. Each sensing circuit is between two adjacent rows of the rows of heating elements and between two adjacent columns of the columns of heating elements, in a same silicon layer as the rows of heating elements and the columns of heating elements, and configured to generate a bio-sensing signal and a temperature-sensing signal.

Abstract: An integrated circuit includes an interconnection structure, first and second sensing pixels over the interconnection structure, and an isolation layer over the first and second sensing pixels. Each of the first and second sensing pixels includes a bio-sensing device, a temperature-sensing device, one or more heating elements adjacent to the bio-sensing device and the temperature-sensing device, and a sensing film over the bio-sensing device. The isolation layer includes a first opening configured to expose the sensing film of the first sensing pixel without exposing the sensing film of the second sensing pixel and a second opening configured to expose the sensing film of the second sensing pixel without exposing the sensing film of the first sensing pixel.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: An integrated circuit includes a plurality of sensing pixels, each sensing pixel including a sensing film portion, a bio-sensing device configured to generate a first signal responsive to an electrical characteristic of the sensing film portion, a first switching device coupled between the bio-sensing device and a first signal path, a temperature-sensing device configured to generate a second signal responsive to a temperature of the sensing film portion, and a second switching device coupled between the temperature-sensing device and a second signal path.