Abstract: An integrated circuit includes a plurality of sensing pixels, each sensing pixel including a sensing film portion, a bio-sensing device configured to generate a first signal responsive to an electrical characteristic of the sensing film portion, a first switching device coupled between the bio-sensing device and a first signal path, a temperature-sensing device configured to generate a second signal responsive to a temperature of the sensing film portion, and a second switching device coupled between the temperature-sensing device and a second signal path.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

Abstract: An approach to optimizing predictive model analysis, comprising creating one or more model templates, decomposing a predictive model, wherein model information is extracted from the predictive model, storing the model information in the one or more model templates, creating a plurality of sub-models, associated with the predictive model, using the stored model information, sending the plurality of sub-models to a scoring engine, receiving results based on the plurality of sub-models from the scoring engine and generating predictions based on combining the results received from the scoring engine. The generated predictions can be sent to one or more analytic applications for further processing.

Abstract: A method includes mounting an integrated electro-microfluidic probe card to a device area on a bio-sensor device wafer, wherein the electro-microfluidic probe card has a first major surface and a second major surface opposite the first major surface. The method further includes electrically connecting at least one electronic probe tip extending from the first major surface to a corresponding conductive area of the device area. The method further includes stamping a test fluid onto the device area. The method further includes measuring via the at least one electronic probe tip a first electrical property of one or more bio-FETs of the device area based on the test fluid.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.

Abstract: Methods, computer program products, and systems are presented. The methods include, for instance: obtaining a request for a predicted ensemble score in real-time. A subset of base model instances is formed by use of a preconfigured priority policy. A fitness score of the formed subset, quantifying the accuracy of the subset, is calculated as a sum of weights respective to the base model instances in the subset. A number of base models represented in the subset is less than or equal to a number of all based models.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

Abstract: A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.

Abstract: An integrated circuit includes two or more rows of heating elements, two or more columns of heating elements, and a plurality of sensing areas. Each sensing area is between two adjacent rows of the rows of heating elements, between two adjacent columns of the columns of heating elements, and includes a bio-sensing device and a temperature-sensing device.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

Abstract: A method for testing a partially fabricated bio-sensor device wafer includes aligning the partially fabricated bio-sensor device wafer on a wafer stage of a wafer-level bio-sensor processing tool. The method further includes mounting an integrated electro-microfluidic probe card to a device area on the partially fabricated bio-sensor device wafer, wherein the electro-microfluidic probe card has a first major surface. The method further includes electrically connecting one or more electronic probe tips disposed on the first major surface of the integrated electro-microfluidic probe card to conductive areas of the device area. The method further includes flowing a test fluid from a fluid supply to the integrated electro-microfluidic probe card. The method further includes electrically measuring via the one or more electronic probe tips a first electrical property of one or more bio-FETs of the device area based on the test fluid flow.

Abstract: A method of manufacturing an integrated circuit device includes providing a substrate comprising a semiconductor active layer, and forming source/drain regions, temperature sensors, and heating elements either in the semiconductor active layer or on the front side of the semiconductor active layer. The semiconductor active layer has channel regions between adjacent source/drain regions, and each of the heating elements is aligned over at least a portion of a corresponding temperature sensor. The method also includes forming a metal interconnect structure over the front side of the semiconductor active layer and exposing the channel regions from the back side of the semiconductor active layer substrate. A fluid gate dielectric layer is formed over the exposed channel regions.

Abstract: A charge pump apparatus is provided. A two-phase clock signal and a four-phase clock signal for respectively driving a two-phase charge pump circuit and a four-phase charge pump circuit are generated according to delay signals of coupling nodes between delay circuits of a ring oscillator circuit.

Abstract: A dual-mode signal amplifying circuit includes: a first and a second input terminals for receiving differential input signals; two output terminals for providing differential output signals; a first through a third current sources; a first switch positioned between the first current source and a first node, and controlled by the first input terminal; a second switch positioned between the first current source and a second node, and controlled by the second input terminal; a third switch positioned between the first node and a fixed-voltage terminal, and controlled by a third node; a fourth switch positioned between the second node and a fixed-voltage terminal, and controlled by the third node; a fifth switch positioned between the second current source and a fixed-voltage terminal, and controlled by the first node; and a sixth switch positioned between the third current source and a fixed-voltage terminal, and controlled by the second node.

Abstract: The present disclosure provides biochips and methods of fabricating biochips. The method includes combining three portions: a transparent substrate, a first substrate with microfluidic channels therein, and a second substrate. Through-holes for inlet and outlet are formed in the transparent substrate or the second substrate. Various non-organic landings with support medium for bio-materials to attach are formed on the first substrate and the second substrate before they are combined. In other embodiments, the microfluidic channel is formed of an adhesion layer between a transparent substrate and a second substrate with landings on the substrates.

Abstract: A DC offset calibration circuit for calibrating DC offset with multi-level method includes analog DC offset cancellation unit and digital DC offset cancellation unit, wherein analog DC offset cancellation unit includes first amplifier and integrator, first amplifier receives analog signal with DC offset, and transmits to integrator, and integrator transmits first feedback signal to first amplifier to output amplified signal with fixed DC offset, and digital DC offset cancellation unit includes comparator, digital circuit, digital-to-analog converter and second amplifier, where second amplifier receives amplified signal with fixed DC offset and transmits to comparator for determining DC offset value and transmitting to digital circuit, digital circuit generates logical result according to DC offset value and transmits to digital-to-analog converter, and therefore digital-to-analog converter accordingly generates second feedback signal to second amplifier, to calibrate DC offset value on second amplifier.

Abstract: According to an embodiment, a method, computer system, and computer program product for managing data is provided. The present invention may include accumulating a plurality of predicted outputs according to a data accumulation rule. The plurality of predicted outputs is generated by a predictive model executed by a first system. The present invention may include evaluating, by a second system, an accuracy of the predictive model. Evaluating the accuracy of the predictive model may include determining a degree of difference between the plurality of predicted outputs and information generated during a development stage of the predictive model. The present invention may include determining whether the accuracy of the predictive model has declined by an amount which exceeds a pre-determined threshold. The present invention may include updating the predictive model.

Abstract: A DC offset calibration circuit for calibrating DC offset with multi-level method includes analog DC offset cancellation unit and digital DC offset cancellation unit, wherein analog DC offset cancellation unit includes first amplifier and integrator, first amplifier receives analog signal with DC offset, and transmits to integrator, and integrator transmits first feedback signal to first amplifier to output amplified signal with fixed DC offset, and digital DC offset cancellation unit includes comparator, digital circuit, digital-to-analog converter and second amplifier, where second amplifier receives amplified signal with fixed DC offset and transmits to comparator for determining DC offset value and transmitting to digital circuit, digital circuit generates logical result according to DC offset value and transmits to digital-to-analog converter, and therefore digital-to-analog converter accordingly generates second feedback signal to second amplifier, to calibrate DC offset value on second amplifier.

Abstract: A method of manufacturing an integrated circuit device includes providing a substrate comprising a semiconductor active layer, and forming source/drain regions, temperature sensors, and heating elements either in the semiconductor active layer or on the front side of the semiconductor active layer. The semiconductor active layer has channel regions between adjacent source/drain regions, and each of the heating elements is aligned over at least a portion of a corresponding temperature sensor. The method also includes forming a metal interconnect structure over the front side of the semiconductor active layer and exposing the channel regions from the back side of the semiconductor active layer substrate. A fluid gate dielectric layer is formed over the exposed channel regions.