Patents by Inventor Yi-Wei Chen

Yi-Wei Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190371261
    Abstract: The disclosure provides a storage medium, an expansion base and an operation method thereof combined with a portable electronic device. The portable electronic device is pre-installed with an application program and includes a touch screen. The expansion base is paired with the portable electronic device and accommodates the portable electronic device. When the portable electronic device is accommodated inside the expansion base, a touch window on the surface of the expansion base exposes at least a portion of the touch screen, and the portable electronic device executes the application program to automatically adjust a size or a display position of a display image of the touch screen to correspond to the touch window.
    Type: Application
    Filed: May 13, 2019
    Publication date: December 5, 2019
    Applicant: COMPAL ELECTRONICS, INC.
    Inventors: Che-Wei Liang, Xiu-Yu Lin, Yi-Han Liao, Sheng-Chieh Tang, Chieh-Yu Chan, Chiao-Tsu Chiang, Wen-Yi Chiu, Wei-Chih Hsu, Li-Fang Chen, Yi-Jing Lin
  • Patent number: 10495970
    Abstract: The present disclosure describes a method for improving post-photolithography critical dimension (CD) uniformity for features printed on a photoresist. A layer can be formed on one or more printed features and subsequently etched to improve overall CD uniformity across the features. For example the method includes a material layer disposed over a substrate and a photoresist over the material layer. The photoresist is patterned to form a first feature with a first critical dimension (CD) and a second feature with a second CD that is larger than the first CD. Further, a layer is formed with one or more deposition/etch cycles in the second feature to form a modified second CD that is nominally equal to the first CD.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: December 3, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Xi-Zong Chen, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu, Chih-Hsuan Lin
  • Patent number: 10498254
    Abstract: The invention provides a power conversion device, including: a voltage conversion stage, including a primary side for receiving a rectified voltage and a secondary side for generating a rectified voltage according to the rectified voltage, wherein the primary side includes a primary side switch; a switch control circuit having a startup status and a normal operation status, the switch control circuit being configured to operably provide a control signal to a control terminal of the primary side switch; a startup circuit, providing a current to the control terminal when the switch control circuit is in the startup status, to at least partially conduct the primary side switch; and a slow soft-startup circuit, wherein when the switch control circuit is in the startup status and the output voltage does not reach a predetermined voltage in a first predetermined time period, the slow soft-startup circuit reduces a total current quantity supplied to the control terminal in a second predetermined time period which is
    Type: Grant
    Filed: June 24, 2017
    Date of Patent: December 3, 2019
    Assignee: RICHTEK TECHNOLOGY CORPORATION
    Inventors: Jyun-Che Ho, Isaac Y. Chen, Yi-Wei Lee
  • Patent number: 10497705
    Abstract: The present invention provides a bit line gate structure comprising a substrate, an amorphous silicon layer disposed on the substrate, a first doped region located in the amorphous silicon layer, a titanium silicon nitride (TiSiN) layer, located in the amorphous silicon layer, and a second doped region located in the TiSiN layer, the first doped region contacts the second doped region directly.
    Type: Grant
    Filed: May 6, 2018
    Date of Patent: December 3, 2019
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Pin-Hong Chen, Yi-Wei Chen, Chun-Chieh Chiu, Chih-Chieh Tsai, Tzu-Chieh Chen, Chih-Chien Liu
  • Publication number: 20190362121
    Abstract: An optical detection device and a detection method thereof are provided. The optical detection device includes a sensing element array, an optical film layer, a driver and a controller. The sensing element array is used to detect a touching action. The optical film layer covers the sensing element array for receiving the touching action. The controller generates a trigger signal according to the touching action. Wherein, the driver lights the optical film layer according to the trigger event in an initial time interval, and the driver stops the optical film layer being lighted during the interval time interval after the initial time interval and the driver lights the optical film layer again during a detection time interval after the interval time interval, and the optical film layer generates a detecting image according to the touching action. The controller detects the image identification during the detection time interval.
    Type: Application
    Filed: March 15, 2019
    Publication date: November 28, 2019
    Applicant: Au Optronics Corporation
    Inventors: Chih-Hung Wang, Yi-Wei Chen, Cheng-Hsiang Ho
  • Publication number: 20190362981
    Abstract: A fin-shaped structure includes a substrate having a first fin-shaped structure located in a first area and a second fin-shaped structure located in a second area, wherein the second fin-shaped structure includes a ladder-shaped cross-sectional profile part. The present invention also provides two methods of forming this fin-shaped structure. In one case, a substrate having a first fin-shaped structure and a second fin-shaped structure is provided. A treatment process is performed to modify an external surface of the top of the second fin-shaped structure, thereby forming a modified part. A removing process is performed to remove the modified part through a high removing selectivity to the first fin-shaped structure and the second fin-shaped structure, and the modified part, thereby the second fin-shaped structure having a ladder-shaped cross-sectional profile part is formed.
    Type: Application
    Filed: August 6, 2019
    Publication date: November 28, 2019
    Inventors: Wen-Jiun Shen, Ssu-I Fu, Yen-Liang Wu, Chia-Jong Liu, Yu-Hsiang Hung, Chung-Fu Chang, Man-Ling Lu, Yi-Wei Chen
  • Publication number: 20190348386
    Abstract: A chip package structure is provided. The chip package structure includes a substrate having a first surface and a second surface opposite to the first surface. The chip package structure includes a first chip structure and a second chip structure over the first surface. The chip package structure includes a protective layer over the first surface and surrounding the first chip structure and the second chip structure. A portion of the protective layer is between the first chip structure and the second chip structure. The chip package structure includes a first anti-warpage bump over the second surface and extending across the portion of the protective layer. The chip package structure includes a conductive bump over the second surface and electrically connected to the first chip structure or the second chip structure. The first anti-warpage bump is wider than the conductive bump.
    Type: Application
    Filed: February 15, 2019
    Publication date: November 14, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuan-Yu HUANG, Sung-Hui HUANG, Shu-Chia HSU, Leu-Jen CHEN, Yi-Wei LIU, Shang-Yun HOU, Jui-Hsieh LAI, Tsung-Yu CHEN, Chien-Yuan HUANG, Yu-Wei CHEN
  • Patent number: 10475799
    Abstract: A fabricating method of a semiconductive element includes providing a substrate, wherein an amorphous silicon layer covers the substrate. Then, a titanium nitride layer is provided to cover and contact the amorphous silicon layer. Later, a titanium layer is formed to cover the titanium nitride layer. Finally, a thermal process is performed to transform the titanium nitride layer into a nitrogen-containing titanium silicide layer.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: November 12, 2019
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Pin-Hong Chen, Yi-Wei Chen, Chih-Chieh Tsai, Tzu-Chieh Chen, Tsun-Min Cheng, Chi-Mao Hsu
  • Patent number: 10475900
    Abstract: A method for manufacturing a semiconductor device with a cobalt silicide film is provided in the present invention. The method includes the steps of providing a silicon structure with an interlayer dielectric formed thereon, forming a contact hole in the interlayer dielectric to expose the silicon structure, depositing a cobalt film on the exposed silicon structure at a temperature between 300° C.-400° C., wherein a cobalt protecting film is in-situ formed on the surface of the cobalt film, performing a rapid thermal process to transform the cobalt film into a cobalt silicide film, and removing untransformed cobalt film.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: November 12, 2019
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Kai-Jiun Chang, Tsun-Min Cheng, Chih-Chieh Tsai, Jui-Min Lee, Yi-Wei Chen, Chia-Lung Chang, Wei-Hsin Liu
  • Publication number: 20190341388
    Abstract: A method of forming a semiconductor memory device includes the following steps. First of all, a substrate is provided, and a plurality of gates is formed in the substrate, along a first direction. Next, a semiconductor layer is formed on the substrate, covering the gates, and a plug is then in the semiconductor layer, between two of the gates. Then, a deposition process is performed to from a stacked structure on the semiconductor layer. Finally, the stacked structure is patterned to form a plurality of bit lines, with one of the bit lines directly in contact with the plug.
    Type: Application
    Filed: June 7, 2018
    Publication date: November 7, 2019
    Inventors: Yi-Wei Chen, Hsu-Yang Wang, Chun-Chieh Chiu, Shih-Fang Tzou
  • Patent number: 10465287
    Abstract: A semiconductor device includes a substrate, a dielectric layer, a first tungsten layer, an interface layer and a second tungsten layer. The dielectric layer is disposed on the substrate and has a first opening and a second opening larger than the first opening. The first tungsten layer is filled in the first opening and is disposed in the second opening. The second tungsten layer is disposed on the first tungsten layer in the second opening, wherein the second tungsten layer has a grain size gradually increased from a bottom surface to a top surface. The interface layer is disposed between the first tungsten layer and the second tungsten layer, wherein the interface layer comprises a nitrogen containing layer. The present invention further includes a method of forming a semiconductor device.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: November 5, 2019
    Assignees: UNITED MICROELECTRONCIS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Chih-Chien Liu, Pin-Hong Chen, Tsun-Min Cheng, Yi-Wei Chen
  • Patent number: 10462747
    Abstract: A wireless device includes a radio-frequency module, a modem module, and a control unit. The radio-frequency module and the modem module operate either in a first operation mode or in a second operation mode. The control unit, coupled to the RF and the modem module, generates a control signal to indicate to the RF and the modem module to operate in the first operation mode or to operate in the second operation mode. A first set of signal formats corresponding to the first operation mode is a superset of a second set of signal formats corresponding to the second operation mode, and a first power consumption corresponding to the first operation mode is higher than a second power consumption corresponding to the second operation mode.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: October 29, 2019
    Assignee: Realtek Semiconductor Corp.
    Inventors: Hou-Wei Lin, Yi-Cheng Chen, Chia-Chun Hung, Yi-Chang Shih, Liang-Hui Li, Yi-Lin Li
  • Patent number: 10453677
    Abstract: A method of forming an oxide layer includes the following steps. A substrate is provided. A surface of the substrate is treated to form an oxygen ion-rich surface. A spin-on-dielectric layer is formed on the oxygen ion-rich surface of the substrate. The present invention also provides a method of forming an oxide layer including the following steps. A substrate is provided. A surface of the substrate is treated with a hydrogen peroxide (H2O2) solution or a surface of the substrate is treated with oxygen containing gas, to form an oxygen ion-rich surface. A spin-on-dielectric layer is formed on the oxygen ion-rich surface of the substrate.
    Type: Grant
    Filed: July 9, 2017
    Date of Patent: October 22, 2019
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Cheng-Hsu Huang, Jui-Min Lee, Ching-Hsiang Chang, Yi-Wei Chen, Wei-Hsin Liu, Shih-Fang Tzou
  • Publication number: 20190319685
    Abstract: A main Bluetooth circuit of a multi-member Bluetooth device includes: a Bluetooth communication circuit; a data transmission circuit; and a control circuit arranged to operably conduct bidirectional packet transmission with a remote Bluetooth device through the Bluetooth communication circuit by utilizing a Bluetooth wireless transmission approach, and arranged to operably communicate data with other devices through the data transmission circuit. During the period in which the Bluetooth communication circuit conducts packet transmission with the remote Bluetooth device, an auxiliary Bluetooth circuit of the multi-member Bluetooth device sniffs packets transmitted from the remote Bluetooth device.
    Type: Application
    Filed: April 11, 2019
    Publication date: October 17, 2019
    Applicant: Realtek Semiconductor Corp.
    Inventors: Yi-Cheng CHEN, Kuan-Chung HUANG, Chin-Wen WANG, Pei-Yuan HSIEH, Hou Wei LIN
  • Publication number: 20190320008
    Abstract: The present disclosure relates to a data transfer method. First, a transmitting index of a file is generated on a data transmitting device using a transmitting data block and a size of the file. The transmitting index is then transmitted to a data receiving device. The data receiving device confirms if the transmitting index matches with one of a plurality of receiving indexes stored in the data receiving device. The plurality of receiving indexes respectively represents a plurality of receiving files stored on the data receiving device. The file is transferred from the data transmitting device to the data receiving device when the transmitting index matches none of the plurality of receiving indexes. The file is not transferred when the transmitting index matches one of the plurality of receiving indexes.
    Type: Application
    Filed: April 16, 2018
    Publication date: October 17, 2019
    Applicant: QBIC TECHNOLOGY CO., LTD.
    Inventors: Yi-Hsin CHEN, Ruyi LI, Shu-Wei CHOU, Juo-Yuan YANG
  • Publication number: 20190319747
    Abstract: A multi-member Bluetooth device includes: a main Bluetooth circuit capable of bidirectionally communicating with a remote Bluetooth device through a first Bluetooth communication circuit; and an auxiliary Bluetooth circuit capable of communicating with the main Bluetooth circuit through a data transmission circuit. While the main Bluetooth circuit utilizes the first Bluetooth communication circuit to communicate with the remote Bluetooth device, the auxiliary Bluetooth circuit utilizes a second Bluetooth communication circuit to sniff packets transmitted from the remote Bluetooth device. When detected that the auxiliary Bluetooth circuit has missed packets transmitted from the remote Bluetooth device, the main Bluetooth circuit transmits missing packets of the auxiliary Bluetooth circuit to the auxiliary Bluetooth circuit through the data transmission circuit.
    Type: Application
    Filed: April 11, 2019
    Publication date: October 17, 2019
    Applicant: Realtek Semiconductor Corp.
    Inventors: Yi-Cheng CHEN, Kuan-Chung HUANG, Chin-Wen WANG, Pei-Yuan HSIEH, Hou Wei LIN
  • Publication number: 20190319107
    Abstract: A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.
    Type: Application
    Filed: May 22, 2018
    Publication date: October 17, 2019
    Inventors: Chun-Chieh Chiu, Pin-Hong Chen, Yi-Wei Chen, Tsun-Min Cheng, Chih-Chien Liu, Tzu-Chieh Chen, Chih-Chieh Tsai, Kai-Jiun Chang, Yi-An Huang, Chia-Chen Wu, Tzu-Hao Liu
  • Publication number: 20190318933
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.
    Type: Application
    Filed: May 22, 2018
    Publication date: October 17, 2019
    Inventors: Tzu-Hao Liu, Yi-Wei Chen, Tsun-Min Cheng, Kai-Jiun Chang, Chia-Chen Wu, Yi-An Huang, Po-Chih Wu, Pin-Hong Chen, Chun-Chieh Chiu, Tzu-Chieh Chen, Chih-Chien Liu, Chih-Chieh Tsai, Ji-Min Lin
  • Publication number: 20190320345
    Abstract: A auxiliary Bluetooth circuit of a multi-member Bluetooth device includes: a Bluetooth communication circuit; a data transmission circuit; and a control circuit arranged to operably control the data transmission circuit to communicate data with a main Bluetooth circuit of the multi-member Bluetooth device, and arranged to utilize the Bluetooth communication circuit to sniff packets transmitted from the remote Bluetooth device during the period in which the main Bluetooth circuit conducts packet transmission with the remote Bluetooth device. When the auxiliary Bluetooth circuit missed packets transmitted from the remote Bluetooth device, the data transmission circuit is further arranged to operably receive the missed packets from the main Bluetooth circuit.
    Type: Application
    Filed: April 11, 2019
    Publication date: October 17, 2019
    Applicant: Realtek Semiconductor Corp.
    Inventors: Yi-Cheng CHEN, Kuan-Chung HUANG, Chin-Wen WANG, Pei-Yuan HSIEH, Hou Wei LIN
  • Publication number: 20190319031
    Abstract: The present invention provides a bit line gate structure comprising a substrate, an amorphous silicon layer disposed on the substrate, a first doped region located in the amorphous silicon layer, a titanium silicon nitride (TiSiN) layer, located in the amorphous silicon layer, and a second doped region located in the TiSiN layer, the first doped region contacts the second doped region directly.
    Type: Application
    Filed: May 6, 2018
    Publication date: October 17, 2019
    Inventors: Pin-Hong Chen, Yi-Wei Chen, Chun-Chieh Chiu, Chih-Chieh Tsai, Tzu-Chieh Chen, Chih-Chien Liu