Abstract: A method of attaching an elastic protective film on an object is provided. Firstly, the object is provided. Then, an adhesive layer is installed on the object. Then, the elastic protective film is provided. Then, a buffering element is provided. Then, a piercing element is provided. A side of the piercing element facing the buffering element includes plural needle-like structures. Then, the piercing element and the buffering element are pressed on the elastic protective film, the adhesive layer and the object along a first direction. Consequently, the buffering element and the elastic protective film are pierced by the plural needle-like structures. Then, the piercing element and the buffering element are removed along a second direction, wherein the second direction is opposite to the first direction.

Abstract: A keyboard device includes plural keys, a frame member and an elastic protective film. The frame member includes an outer frame and plural perforations. The keys are disposed within the outer frame. The outer frame has a first surface and a second surface opposed to the first surface. The plural perforations are in communication with the first surface and the second surface. The elastic protective film is fixed on the first surface of the frame member. The plural keys and the plural perforations are covered by the elastic protective film.

Abstract: A pixel array substrate, including a substrate, multiple conductors, a pixel driving circuit, a first pad, and a second pad, is provided. The substrate has a first surface, a second surface, and multiple through holes. The through holes extend from the first surface to the second surface. The conductors are respectively disposed in the through holes. The pixel driving circuit is disposed on the first surface of the substrate. The first pad and the second pad are disposed on the second surface of the substrate. The conductors include a first conductor, a second conductor, and a first dummy conductor. The first conductor is electrically connected to the pixel driving circuit and the first pad. The second conductor is electrically connected to the pixel driving circuit and the second pad. The first dummy conductor is overlapped with and electrically isolated from the pixel driving circuit.

Abstract: Multi-stage content addressable memory devices are described. Some embodiments relate to memory devices including a plurality of rows of memory cells, multiple match lines and multiple pre-charge circuits. A first row of the plurality of rows includes a first segment and a second segment. The first segment may include a first subset of the memory cells of the first row and the second segment may include a second subset of the memory cells of the first row. The first match line is coupled to the memory cells of the first subset, and the second match line is coupled to the memory cells of the second subset. The first pre-charge circuit is configured to pre-charge the first match line to a first pre-charge voltage, and the second pre-charge circuit is configured to pre-charge the second match line to a second pre-charge voltage different from (e.g., greater than) the first pre-charge voltage.

Abstract: A method for fabricating buried word line of a dynamic random access memory (DRAM) includes the steps of: forming a trench in a substrate; forming a first conductive layer in the trench; forming a second conductive layer on the first conductive layer, in which the second conductive layer above the substrate and the second conductive layer below the substrate comprise different thickness; and forming a third conductive layer on the second conductive layer to fill the trench.

Abstract: A power converter is provided. The power converter includes a housing, a heat dissipation module, and a first circuit board. The housing forms a receiving space, wherein the housing includes a first housing port and a second housing port. The heat dissipation module is detachably connected to the housing, and disposed in the receiving space. The heat dissipation module includes an inner path that communicates the first housing port with the second housing port. Working fluid enters the inner path via the first housing port. The working fluid leaves the inner path via the second housing port. The first circuit board includes a first circuit board body and a first heat source, wherein the first heat source is disposed on the first circuit board body, and the first heat source is thermally connected to the inner path of the heat dissipation module.

Abstract: A method for fabricating buried word line of a dynamic random access memory (DRAM) includes the steps of: forming a trench in a substrate; forming a first conductive layer in the trench; forming a second conductive layer on the first conductive layer, in which the second conductive layer above the substrate and the second conductive layer below the substrate comprise different thickness; and forming a third conductive layer on the second conductive layer to fill the trench.

Abstract: A fabricating method of a semiconductive element includes providing a substrate, wherein an amorphous silicon layer covers the substrate. Then, a titanium nitride layer is provided to cover and contact the amorphous silicon layer. Later, a titanium layer is formed to cover the titanium nitride layer. Finally, a thermal process is performed to transform the titanium nitride layer into a nitrogen-containing titanium silicide layer.

Abstract: A method of manufacturing a semiconductor device for preventing row hammering issue in DRAM cell, including the steps of providing a substrate, forming a trench in the substrate, forming a gate dielectric conformally on the trench, forming an n-type work function metal layer conformally on the substrate and the gate dielectric, forming a titanium nitride layer conformally on the n-type work function metal layer, and filling a buried word line in the trench.

Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.

Abstract: A backup battery system includes a charging-discharging module and a battery module. The charging-discharging module includes a first connector and a first engaging member. The battery module is detachably connected to the charging-discharging module and includes a second connector corresponding to the first connector and a second engaging member corresponding to the first engaging member. When the battery module is connected to the charging-discharging module, the first connector is joined with the second connector and the first engaging member is fixed to the second engaging member.

Abstract: A key structure includes a keycap, a base plate and a wing-type supporting element. When the keycap is depressed in response to an external force, a first frame and a second frame of the wing-type supporting element are pushed by each other through protrusion structures and rotating shafts. Consequently, the first frame and the second frame can be swung relative to the base plate.

Abstract: A keyboard device includes plural key structures. Each key structure includes a plate assembly, a keycap, a connecting member and a buffering element. The plate assembly has a hollow region. The keycap is located over the plate assembly. The connecting member is connected between the keycap and the plate assembly. The keycap is connected with the connecting member through at least one hook of the keycap. The keycap is movable upwardly or downwardly relative to the plate assembly through the connecting member. The buffering element is installed on the plate assembly. The buffering element is extended in a direction toward the keycap and penetrated through the hollow region of the plate assembly. While the keycap is moved downwardly and the at least one hook of the keycap is contacted with the buffering element, there is the gap between the keycap and the plate assembly.

Abstract: A low-height key structure includes a keycap, a supporting plate, a connecting element, a circuit board and an elastic element. The circuit board is disposed on the supporting plate. A switch element is installed on the circuit board. The connecting element is connected with the keycap and the supporting plate. The keycap is movable upwardly or downwardly relative to the supporting plate through the connecting element. The elastic element is arranged between the keycap and the circuit board. The elastic element includes a contacting part and an elastic support part, which are connected with each other. The contacting part includes a bowl-shaped concave structure. A raised structure is protruded from a middle region of a bottom side of the bowl-shaped concave structure. A top surface of the raised structure is at a level lower than or equal to a top surface of the contacting part.

Abstract: A method of forming a semiconductor structure includes providing a material layer having a recess formed therein. A first tungsten metal layer is formed at a first temperature and fills the recess. An anneal process at a second temperature is then performed, wherein the second temperature is higher than the first temperature.

Abstract: A display apparatus includes a first substrate, a second substrate, a display medium, a pixel structure, a read-out transistor, a first insulating layer, a light-sensing structure, and a color filter pattern. The display medium is disposed between the first substrate and the second substrate. The pixel structure is disposed between the display medium and the first substrate. The read-out transistor has a semiconductor pattern and a control terminal. The light-sensing structure is disposed between the second substrate and the display medium, and is electrically connected to the read-out transistor. The first insulating layer is disposed between the semiconductor pattern and the control terminal of the read-out transistor. The color filter pattern is disposed between the second substrate and the display medium. The first insulating layer has an opening located outside the light-sensing structure, and the color filter pattern fills the opening of the first insulating layer.

Abstract: A system and method of emulating radio device includes a multi-radio unit, a multi-radio unit controller and an under-test radio system. The multi-radio unit includes multiple radio circuits, in which the radio circuits are configured to generate multiple radio emulated signals. The multi-radio unit controller coupled to the multi-radio unit is configured to generate multiple control signals to the multi-radio unit, in which the control signals are configured to control the radio emulated signals sent by the multi-radio unit. The under-test radio system is configured to receive the radio emulated signals generated by the multi-radio unit, and configured to generate multiple data corresponding to the radio emulated signals.

Abstract: Multi-stage content addressable memory devices are described. Some embodiments relate to memory devices including a plurality of rows of memory cells, multiple match lines and multiple pre-charge circuits. A first row of the plurality of rows includes a first segment and a second segment. The first segment may include a first subset of the memory cells of the first row and the second segment may include a second subset of the memory cells of the first row. The first match line is coupled to the memory cells of the first subset, and the second match line is coupled to the memory cells of the second subset. The first pre-charge circuit is configured to pre-charge the first match line to a first pre-charge voltage, and the second pre-charge circuit is configured to pre-charge the second match line to a second pre-charge voltage different from (e.g., greater than) the first pre-charge voltage.

Abstract: A method of forming a semiconductor memory device includes the following steps. First of all, a substrate is provided, and a plurality of gates is formed in the substrate, along a first direction. Next, a semiconductor layer is formed on the substrate, covering the gates, and a plug is then in the semiconductor layer, between two of the gates. Then, a deposition process is performed to from a stacked structure on the semiconductor layer. Finally, the stacked structure is patterned to form a plurality of bit lines, with one of the bit lines directly in contact with the plug.

Abstract: A display device includes a pixel array substrate, a sensing element substrate, and a display medium layer. The display medium layer is disposed between the pixel array substrate and the sensing element substrate. The sensing element substrate includes a substrate, a switch element, an insulation layer, an electrically conductive layer, a signal line, a sensing layer, and an electrode layer. The switch element is disposed on the substrate. The insulation layer covers the switch element. The electrically conductive layer is disposed on the insulation layer. The signal line is electrically connected to the electrically conductive layer. The sensing layer covers a top surface of the electrically conductive layer, a first side of the electrically conductive layer, and a second side of the electrically conductive layer. The electrode layer covers the sensing layer. The electrode layer is electrically connected to the switching element.