Abstract: A shipping container connector includes a first latch unit, a second latch unit and a pulling rope unit. The first latch unit has a first body member, a first latch portion. The first body member has two side walls cooperatively defining a mounting space. One of the side walls has a threading hole. The second latch unit is disposed in the mounting space, and includes a second body member, and a spring member. The pulling rope unit extends through the threading hole, and has an end fixed to the second latch unit, and an opposite end disposed outside of the threading hole. When the pulling rope unit is pulled, the second latch unit is driven to move relative to the first latch unit from a locked position to a released position, where the spring member accumulates a biasing force for biasing the second latch unit towards the locked position.

Abstract: Semiconductor processing systems and methods for increased etch selectivity and rate are provided. Methods include etching a target material of a semiconductor substrate by flowing one or more plasma precursors through a microwave applicator into a remote plasma region of a semiconductor processing chamber. Generating a remote plasma within the remote plasma region at a microwave frequency, where the generated remote plasma comprises a density of greater than 1×1010 per cm3, an ion energy of less than or about 50 eV, or a combination thereof. Flowing the plasma effluents into a processing region of the semiconductor processing chamber. The microwave applicator includes a resonator body and a plate, where the resonator body is formed from or coated with a first dielectric material and the plate is formed from or coated with a second dielectric material.

Abstract: An antigen-binding protein constructs (e.g., bispecific antibodies or antigen-binding fragments thereof), wherein the antigen-binding protein constructs specifically bind to two different antigens (e.g., CTLA4 and OX40).

Abstract: An electronic device includes a processor arranged to execute an application, a platform and a middleware. The application is configured to execute operations of: providing at least one acceptable quality and at least one priority of the at least one profile parameter. The platform is configured to execute an operation of: providing platform information in response to a demand request. The middleware is configured to execute operations of: receiving the at least one acceptable quality and the at least one priority from the application; receiving the platform information from the platform; performing a self-adaptive algorithm according to the platform information to generate a result; adjusting the at least one profile parameter according to the result, the at least one acceptable quality and the at least one priority; and transmitting an adjustment notification to the platform, after adjusting the at least one profile parameter.

Abstract: A semiconductor package includes: a die having a conductive pad at a first side of the die; and a redistribution structure over the first side of the die and electrically coupled to the die. The redistribution structure includes: a first dielectric layer including a first dielectric material; a first via in the first dielectric layer, where the first via is electrically coupled to the conductive pad of the die; and a first dielectric structure embedded in the first dielectric layer, where the first dielectric structure includes a second dielectric material different from the first dielectric material, where the first dielectric structure laterally surrounds the first via and contacts sidewalls of the first via.

Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. The second driving signal includes a resonant pulse having a resonant pulse width and a ZVS pulse during the DCM operation. The resonant pulse is configured to demagnetize the transformer. The resonant pulse has a first minimum resonant period for a first level of the output load and a second minimum resonant period for a second level of the output load. The first level is higher than the second level and the second minimum resonant period is shorter than the first minimum resonant period.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor having a semiconductor substrate comprising a front-side surface opposite a back-side surface. A plurality of photodetectors is disposed in the semiconductor substrate. An isolation structure extends into the back-side surface of the semiconductor substrate and is disposed between adjacent photodetectors. The isolation structure includes a metal core, a conductive liner disposed between the semiconductor substrate and the metal core, and a first dielectric liner disposed between the conductive liner and the semiconductor substrate. The metal core comprises a first metal material and the conductive liner comprises the first metal material and a second metal material different from the first metal material.

Abstract: An electronic device according to an embodiment of the disclosure may receive an advertising frame transmitted by an external electronic device through the communication circuit through ultra-wideband (UWB) communication, may receive at least one frame among the advertising frames in a first decision period, may determine whether the number of times an angle based on the at least one frame received in the first decision period is within a specified angle range satisfies a specified condition, and may determine whether the electronic device points to the external electronic device according to whether the specified condition is satisfied.

Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. During a DCM (discontinuous conduction mode) operation, the second driving signal includes a resonant pulse for demagnetizing the transformer and a ZVS (zero voltage switching) pulse for achieving ZVS of the first transistor. The resonant pulse is skipped when the output voltage is lower than a low-voltage threshold.

Abstract: A resonant asymmetrical half-bridge flyback power converter includes: a first transistor and a second transistor switching a transformer coupled to a capacitor for generating an output power; a voltage divider coupled to an auxiliary winding of the transformer; a differential sensing circuit which includes a first terminal and a second terminal coupled to the voltage divider to sense an auxiliary signal generated by the auxiliary winding for generating a peak signal and a demagnetization-time signal; and a PWM control circuit configured to generate a first PWM signal and a second PWM signal in accordance with the peak signal and the demagnetization-time signal, for controlling the first transistor and the second transistor respectively; wherein a period of an enabling state of the demagnetization-time signal is correlated to the output power level; wherein the peak signal is related to a quasi-resonance of the transformer after the transformer is demagnetized.

Abstract: Aspects of the present disclosure provide techniques for multiplexing high priority uplink control information (UCI) and low priority UCI on a physical uplink control channel (PUCCH). A method includes determining a total number of resource blocks to transmit encoded UCI bits based on a quantized payload size of a second one or more encoded UCI bits of a second priority and a non-quantized payload size of a first one or more encoded UCI bits of a first priority. The method generally includes mapping the second one or more encoded UCI bits to a first number of resource elements associated with the quantized payload size and the first one or more encoded UCI bits to a second number of REs and transmitting the encoded UCI bits in a PUCCH in accordance with the mapping.

Abstract: A method for detecting a borehole caving based on cuttings and elements logging data includes: integrating real-time elements logging data and real-time cuttings return data of a target well, and historical elements logging data and stratum evaluation data of an adjacent well; calculating a root mean square deviation (RMSD) ? of a relative content of each element of the target well and the adjacent well and a real-time cuttings return ratio; setting a threshold ? of the RMSD ? of the relative content of each element and a threshold range (a,b) of the real-time cuttings return ratio; and establishing an intelligent stratum identification model based on a support vector machine (SVM) for real-time determination of a horizon from which current cuttings are returned. The method can achieve effective borehole caving detection, such that on-site personnel can deal with borehole caving in time and prevent it from developing into a complicated drilling accident.

Abstract: An electronic device includes an ultra-wide band (UWB) circuit, and at least one processor comprising a controller of UWB circuit. The at least one processor is configured to transmit, through UWB circuit operating in a first mode, a first signal for a first field in a first frame, transmit, through UWB circuit operating in the first mode, a second signal including designated information for a second field in the first frame, receive, through UWB circuit operating in the first mode, a first reflected signal related to the first signal and a second reflected signal related to the second signal, respectively, caused by an external object, according to a state of the designated information identified from the second reflected signal, obtain information on the external object based on the first reflected signal or transmit a second frame through UWB circuit operating in a second mode.

Abstract: A valve includes a valve body, a valve plate, and an actuation mechanism, wherein the valve body includes two plates parallel to each other and symmetrical and on which medium access holes are correspondingly opened; sealing rings a are symmetrically provided on inner surfaces of the two plates, and the medium access holes on the two plates are completely located within circumferentially closed holes of the sealing rings a; the valve plate has a smooth surface and is tightly sandwiched between the sealing rings a when the valve is closed; a fastening structure is installed on the two plates of the valve body and clamps the two plates and/or the sealing rings a around radial peripheries of the sealing rings a; and at least a part of the fastening structure can adjust its clamping degree in a direction perpendicular to a surface of the valve body.

Abstract: Embodiments of the present disclosure provide a stacking edge interconnect chiplet. In one embodiment, a semiconductor device is provided. The semiconductor device includes a first integrated circuit die comprising a first device layer having a first side and a second side opposite the first side, a first interconnect structure disposed on the first side of the first device layer, and a second interconnect structure disposed on the second side of the first device layer. The semiconductor device also includes a power line extending through the first device layer and in contact with the first interconnect structure and the second interconnect structure, and a second integrated circuit die disposed over the first integrated circuit die, the second integrated circuit die comprising a third interconnect structure in contact with the second interconnect structure of the first integrated circuit die.

Abstract: Changing a lighting mode for a human interface device is described herein. A first lighting mode can be initiated for a human interface device. Keys on the human interface device can be selected over a period of time at a frequency that is within a defined range. A second lighting mode for the human interface device can be identified based in part on the frequency being within the defined range. The first lighting mode and the second lighting mode can define a lighting scheme for light sources in the human interface device that reflect a user mood. The first lighting mode can be switched to the second lighting mode.

Abstract: A semiconductor device including a substrate, a magnetic core and a conductor coil is provided. The magnetic core is disposed on the substrate, and formed by sub-layers of different materials stacked alternatively on one another. The conductor coil is disposed on the substrate, wherein the magnetic core partially extends to a level between an upper surface of the conductor coil and a bottom surface of the conductor coil.

Abstract: The technology discloses training a classifier to label webpages with categories, extracting from a training database with thousands of webpages tentatively labeled with ground truth categories, dataset A and dataset B; training a classifier using A; and applying it to webpages in B to assign a webpage a label and a classification score. Also disclosed is cleaning B, removing webpages based on evaluation of a decision confidence metric derived from the score assigned for the webpage; and training a second classifier using cleaned B, with second classifier weights initialized independent of trained first classifier weights; and applying the second classifier to webpages in A to assign a webpage the label, score, and decision confidence matrix, and cleaning A, removing webpages from A based on the decision confidence metric. Then combining cleaned A and cleaned B into a combined clean dataset, and training the third classifier using the combined clean dataset.

Abstract: Disclosed herein are methods for forming opening ends within semiconductor structures. In some embodiments, a method may include providing an opening formed in a layer of a semiconductor device, wherein the opening comprises a set of sidewalls opposite one another, and first and second end walls connected to the sidewalls, wherein each of the first and second end walls defines a tip end and a set of curved sections extending between the tip end and the set of sidewall. The method may further include performing an ion etch to the opening by delivering an ion beam at a non-zero angle relative to a plane defined by the layer of the semiconductor device, wherein the ion etch comprises a lean-gas chemistry, and wherein the ion etch causes the layer of the semiconductor device to be removed faster along the set of curved sections than along the set of sidewalls.

Abstract: Exemplary semiconductor processing methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a boron-containing precursor into the substrate processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-silicon-containing layer on a substrate in the substrate processing region of the semiconductor processing chamber. The boron-and-silicon-containing layer may be characterized by an increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer opposite the first surface. A flow rate of the boron-containing precursor may be increased during the deposition of the boron-and-silicon-containing layer.