Abstract: A control chip coupled to a sensing circuit and including a first memory, an accessing circuit, a second memory, and a processing circuit is provided. The first memory includes a first storage area and a second storage area. The first storage area stores sensing data provided by the sensing circuit. The second storage area stores processing parameters. The accessing circuit reads continuous data of the first storage area according to a first access command to generate first read data and reads at least one processing parameter of the second storage area according to a second access command to generate second read data. The second memory stores the first and second read data. The processing circuit reads the second memory and processes the first read data according to the second read data to generate first processed data. The processing circuit stores the first processed data in the second memory.

Abstract: A transgenic rice plant containing in its genome a recombinant DNA construct that includes a first nucleic acid having a sequence of a first Golden 2-like transcription factor (GLK) gene operably linked to its natural promoter and 5? untranslated region (5?UTR), and a second nucleic acid having a sequence of a second GLK gene operably linked to its natural promoter and 5?UTR, the second GLK gene being distinct from the first GLK gene. The first GLK gene and the second GLK gene are both from a C4 plant and the transgenic rice plant exhibits a 65-106% increase in shoot biomass and a 50-95% increase in grain yield, as compared to an untransformed wild-type rice plant. Also provided is a method for producing the transgenic rice plant and a recombinant DNA construct that can be used in the method.

Abstract: The present disclosure provides methods and systems for separating one or more target analytes from a fluid sample. The systems may comprise a microfluidic device. The microfluidic device may comprise a fluidic channel having an array of obstacles disposed therein. The array of obstacles may be oriented at an angle greater than 0° relative to a direction of a fluid flow in the fluidic channel. The array of obstacles may be configured to separate the target analytes from the fluid upon flow of the fluid through the fluidic channel. The methods of the present disclosure may comprise separating target analytes from a fluid using a microfluidic device comprising obstacles disposed in a fluidic channel of the device. The target analytes may be separated with a high efficiency, sensitivity and/or specificity. Also disclosed herein are devices, methods, and systems for separating one or more biological particles from a fluid sample. The devices may comprise a substrate with a fluidic channel disposed therein.

Abstract: A transgenic rice plant containing in its genome a recombinant DNA construct that includes a first nucleic acid having a sequence of a first Golden 2-like transcription factor (GLK) gene operably linked to its natural promoter and 5? untranslated region (5?UTR), and a second nucleic acid having a sequence of a second GLK gene operably linked to its natural promoter and 5?UTR, the second GLK gene being distinct from the first GLK gene. The first GLK gene and the second GLK gene are both from a C4 plant and the transgenic rice plant exhibits a 65-106% increase in shoot biomass and a 50-95% increase in grain yield, as compared to an untransformed wild-type rice plant. Also provided is a method for producing the transgenic rice plant and a recombinant DNA construct that can be used in the method.

Abstract: Disclosed herein are devices, methods, and systems for separating one or more biological particles from a fluid sample. The devices may comprise a substrate with a fluidic channel disposed therein. The fluidic channel has disposed therein an array of obstacles with a vertical spacing. The vertical spacing may be configured to separate one or more particles from a fluid stream when the stream flows through the fluidic channel. The devices, methods, and systems may be able to separate various types of biological particles at a high efficiency, sensitivity, and/or specificity.

Abstract: Embodiments of the technology described herein, make unknown material-maps in a Physically Based Rendering (PBR) asset usable through an identification process that relies, at least in part, on image analysis. In addition, when a desired material-map type is completely missing from a PBR asset the technology described herein may generate a suitable synthetic material map for use in rendering. In one aspect, the correct map type is assigned using a machine classifier, such as a convolutional neural network, which analyzes image content of the unknown material map and produce a classification. The technology described herein also correlates material maps into material definitions using a combination of the material-map type and similarity analysis. The technology described herein may generate synthetic maps to be used in place of the missing material maps. The synthetic maps may be generated using a Generative Adversarial Network (GAN).

Abstract: A system includes first electronic devices and a digital signature carrier. Each of the first electronic devices has a network identifier distinct from another. The digital signature carrier is configured for recording a connective information list. The connective information list includes the network identifiers of all of the first electronic devices. A second electronic device includes a digital signature reader. The second electronic device is configured to read the digital signature carrier by the digital signature reader, extract the connective information list comprising the network identifiers and pair the second electronic device with each of the first electronic devices according to the network identifiers.

Abstract: A capacitive touch system and a sensing method thereof are disclosed. The capacitive touch system includes a touch panel including a plurality of driving electrodes and a plurality of sensing electrodes; a touch control chip; and an external device configured to transmit data to the touch control chip. In a position detection mode, the touch control chip drives the driving electrodes, reads a sensing signal from the sensing electrodes, and determines a position of a touch according to the sensing signal. In a data receiving mode, the touch control chip receives the data transmitted by the external device after a time delay period. In the capacitive touch system and the sensing method thereof, the position detection mode and the data receiving mode can be sequentially performed by delaying the time period.

Abstract: A capacitive touch system and a sensing method thereof are disclosed. The capacitive touch system includes a touch panel; a touch control chip; and an active pen which includes a receiving part, a transmitting part, a control unit, and a pressure sensing element. The control unit controls the transmitting unit to output a pen driving signal according to a pen sensing signal. The pressure sensing element detects a pen pressure signal. The control unit outputs a voltage signal in responsive to the pen pressure signal after a time delay period. In the capacitive touch system and the sensing method thereof, the active pan is not required to be paired with the touch panel.

Abstract: The present disclosure provides a trench power semiconductor component and a method of making the same. The trench power semiconductor component includes a substrate, an epitaxial layer, and a trench gate structure. The epitaxial layer is disposed on the substrate, the epitaxial layer having at least one trench formed therein. The trench gate structure is located in the at least one trench. The trench gate structure includes a bottom insulating layer covering a lower inner wall of the at least one trench, a shielding electrode located in the lower half part of the at least one trench, a gate electrode disposed on the shielding electrode, an inter-electrode dielectric layer disposed between the gate electrode and the shielding electrode, an upper insulating layer covering an upper inner wall of the at least one trench, and a protection structure including a first wall portion and a second wall portion.

Abstract: The present disclosure provides a trench power semiconductor component and a method of making the same. The trench power semiconductor component includes a substrate, an epitaxial layer, and a trench gate structure. The epitaxial layer is disposed on the substrate, the epitaxial layer having at least one trench formed therein. The trench gate structure is located in the at least one trench. The trench gate structure includes a bottom insulating layer covering a lower inner wall of the at least one trench, a shielding electrode located in the lower half part of the at least one trench, a gate electrode disposed on the shielding electrode, an inter-electrode dielectric layer disposed between the gate electrode and the shielding electrode, an upper insulating layer covering an upper inner wall of the at least one trench, and a protection structure including a first wall portion and a second wall portion.

Abstract: A manufacturing method of a trench power semiconductor device is provided. The manufacturing method includes the steps of forming a protective layer on an epitaxial layer and forming a trench gate structure in a trench formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate disposed on the shielding electrode and an inter-electrode dielectric layer disposed therebetween. The step of forming the trench gate structure includes forming an insulating layer covering an inner surface of the trench; and before the step of forming the inter-electrode dielectric layer, forming an initial spacing layer, the spacing layer including a first sidewall portion and a second sidewall portion, both of which include bottom end portions spaced apart from each other and extending portions protruding from the protective layer.

Abstract: The present disclosure provides a trench power semiconductor component and a method of making the same. The trench power semiconductor component includes a substrate, an epitaxial layer, and a trench gate structure. The epitaxial layer is disposed on the substrate, the epitaxial layer having at least one trench formed therein. The trench gate structure is located in the at least one trench. The trench gate structure includes a bottom insulating layer covering a lower inner wall of the at least one trench, a shielding electrode located in the lower half part of the at least one trench, a gate electrode disposed on the shielding electrode, an inter-electrode dielectric layer disposed between the gate electrode and the shielding electrode, an upper insulating layer covering an upper inner wall of the at least one trench, and a protection structure including a first wall portion and a second side wall portion.

Abstract: The present disclosure provides a trench power semiconductor component and a manufacturing method thereof. The trench gate structure of the trench power semiconductor component is located in the at least one cell trench that is formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate electrode disposed above the shielding electrode, an insulating layer, an intermediate dielectric layer, and an inner dielectric layer. The insulating layer covers the inner wall surface of the cell trench. The intermediate dielectric layer interposed between the shielding electrode and the insulating layer has a bottom opening. The inner dielectric layer interposed between the shielding electrode and the intermediate dielectric layer is made of a material different from that of the intermediate dielectric layer, and fills the bottom opening so that the space of the cell trench beneath the shielding electrode is filled with the same material.

Abstract: An electronic apparatus wearable for a user and a display control method thereof are provided. The electronic apparatus includes an interactive display device, a supplementary input device and a processor device. The interactive display device displays a user interface. The processor device coupled to the interactive display device and the supplementary input device detects a clockwise movement and a counter-clockwise movement performed on the supplementary input device, wherein the clockwise movement and the counter-clockwise movement are associated with a function under an operation mode of the electronic apparatus. When one of the clockwise movement and the counter-clockwise movement is detected, the processor device correspondingly performs is the function. When the function is an interface rotation function, the processor device rotates the user interface on the interactive display device in accordance with the detected clockwise movement and the detected counter-clockwise movement.

Abstract: A capacitive touch system and a sensing method thereof are disclosed. The capacitive touch system includes a touch panel including a plurality of driving electrodes and a plurality of sensing electrodes; a touch control chip; and an external device configured to transmit data to the touch control chip. In a position detection mode, the touch control chip drives the driving electrodes, reads a sensing signal from the sensing electrodes, and determines a position of a touch according to the sensing signal. In a data receiving mode, the touch control chip receives the data transmitted by the external device after a time delay period. In the capacitive touch system and the sensing method thereof, the position detection mode and the data receiving mode can be sequentially performed by delaying the time period.

Abstract: A method for manufacturing a semiconductor device includes the following steps. An epitaxial layer is formed on a substrate. Then, a body is formed in an upper portion of the epitaxial layer. A first dielectric layer, a second dielectric layer, and a third dielectric layer are sequentially formed on the epitaxial layer. The third dielectric layer forms a second trench, and the second trench is located in the first trench. A shield layer is formed in the second trench. The upper portion of the third dielectric layer is removed, such that the upper portion of the shield layer protrudes from the third dielectric layer. A fourth dielectric layer is formed to cover the upper portion of the shield layer. A gate is formed on the third dielectric layer. A source is formed in the epitaxial layer surrounding the gate.

Abstract: A capacitive touch system and a sensing method thereof are disclosed. The capacitive touch system includes a touch panel; a touch control chip; and an active pen which includes a receiving part, a transmitting part, a control unit, and a pressure sensing element. The control unit controls the transmitting unit to output a pen driving signal according to a pen sensing signal. The pressure sensing element detects a pen pressure signal. The control unit outputs a voltage signal in responsive to the pen pressure signal after a time delay period. In the capacitive touch system and the sensing method thereof, the active pan is not required to be paired with the touch panel.

Abstract: The present disclosure provides a trench power semiconductor component and a method of making the same. The trench power semiconductor component includes a substrate, an epitaxial layer, and a trench gate structure. The epitaxial layer is disposed on the substrate, the epitaxial layer having at least one trench formed therein. The trench gate structure is located in the at least one trench. The trench gate structure includes a bottom insulating layer covering a lower inner wall of the at least one trench, a shielding electrode located in the lower half part of the at least one trench, a gate electrode disposed on the shielding electrode, an inter-electrode dielectric layer disposed between the gate electrode and the shielding electrode, an upper insulating layer covering an upper inner wall of the at least one trench, and a protection structure including a first wall portion and a second side wall portion.

Abstract: A manufacturing method of a trench power semiconductor device is provided. The manufacturing method includes the steps of forming a protective layer on an epitaxial layer and forming a trench gate structure in a trench formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate disposed on the shielding electrode and an inter-electrode dielectric layer disposed therebetween. The step of forming the trench gate structure includes forming an insulating layer covering an inner surface of the trench; and before the step of forming the inter-electrode dielectric layer, forming an initial spacing layer, the spacing layer including a first sidewall portion and a second sidewall portion, both of which include bottom end portions spaced apart from each other and extending portions protruding from the protective layer.