Abstract: The present invention relates to a power supply circuit for driving at least one light emitting diode (LED). The power supply circuit comprises: an input unit, an active power factor corrector, a converter, an output unit and a feedback unit. The input unit is utilized to receive power signal from a power source, and the output unit is utilized to receive power transferred from the converter for driving at least one LED. The feedback unit couples to a node between the converter and the output unit, and delivers the power signal, from the converter to the output unit, back to the active power factor corrector. The active power factor corrector monitors the power signal based on the power signal from the feedback unit for stabilizing the outputting power from the output unit and thereby driving the LED.

Abstract: Control methods for a cell phone are provided upon occurrence of a particular event, which receive a contact-related information from a touch screen of the cell phone, analyze the contact-related information to identify the contact position, the number of contact objects, or a gesture, to determine a further step to deal with the particular event. The particular event may include receipt of a call, sounding of an alarm of the cell phone, displaying of a short message on the touch screen, receipt of an interrupting call, or a standby mode of the cell phone.

Abstract: A navigation system includes a touch screen for receiving a touch input and displaying a navigation map, mode-switching means for issuing a mode-switching command to switch the navigation system into an input mode, a memory for storing a database, and a controller to recognize a handwriting input or a gesture input to acquire an input information, search the database for a facility information corresponding to the input information, and show facilities represented by the facility information in the navigation map.

Abstract: A power semiconductor structure with schottky diode is provided. In the step of forming the gate structure, a separated first polysilicon structure is also formed on the silicon substrate. Then, the silicon substrate is implanted with dopants by using the first polysilicon structure as a mask to form a body and a source region. Afterward, a dielectric layer is deposited on the silicon substrate and an open penetrating the dielectric layer and the first polysilicon structure is formed so as to expose the source region and the drain region below the body. The depth of the open is smaller than the greatest depth of the body. Then, a metal layer is filled into the open to electrically connect to the source region and the drain region.

Abstract: A fabrication method of a trenched power semiconductor device with source trench is provided. Firstly, at least two gate trenches are formed in a base. Then, a dielectric layer and a polysilicon structure are sequentially formed in the gate trench. Afterward, at least a source trench is formed between the neighboring gate trenches. Next, the dielectric layer and a second polysilicon structure are sequentially formed in the source trench. The second polysilicon structure is located in a lower portion of the source trench. Then, the exposed portion of the dielectric layer in the source trench is removed to expose a source region and a body region. Finally, a conductive structure is filled into the source trench to electrically connect the second polysilicon structure, the body region, and the source region.

Abstract: A power semiconductor structure with schottky diode is provided. In the step of forming the gate structure, a separated first polysilicon structure is also formed on the silicon substrate. Then, the silicon substrate is implanted with dopants by using the first polysilicon structure as a mask to form a body and a source region. Afterward, a dielectric layer is deposited on the silicon substrate and an open penetrating the dielectric layer and the first polysilicon structure is formed so as to expose the source region and the drain region below the body. The depth of the open is smaller than the greatest depth of the body. Then, a metal layer is filled into the open to electrically connect to the source region and the drain region.

Abstract: A fabrication method of a self-aligned power semiconductor structure is provided. Firstly, a trenched polysilicon gate is formed in a silicon substrate. Then, a self-aligned polysilicon extending structure is formed on the trenched polysilicon gate. A width of the self-aligned polysilicon extending structure is smaller than that of the trenched polysilicon gate. Thereafter, the self-aligned polysilicon extending structure is oxidized to form a silicon oxide protruding structure on the trenched polysilicon gate. Then, a first spacer is formed on a sidewall of the silicon oxide protruding structure to define a source contact window.

Abstract: A computing device for performing functions of multi-touch finger gesture is disclosed. The computing device includes a receiver to receive at least one of a first input from a first object or a second input from at least two second objects, a look-up-table (LUT) module to store a second set of functions associated with the at least two second objects, and a mapping module to map one type of the first input from the first object to a corresponding one of the second set of functions. The computing device is configured to perform a corresponding one of the second set of functions based on the type of the first input.

Abstract: A fabrication method of a trenched metal-oxide-semiconductor device is provided. Firstly, an epitaxial layer is formed on a substrate. Then, a plurality of gate trenches is formed in the epitaxial layer. Afterward, a spacer is formed on the sidewall of the trench gates. The spacer is utilized as a mask to selectively implant oxygen ion into the bottom of the gate trenches so as to form a bottom oxide layer on the bottom of the gate trenches to reduce capacitance between gate and drain.

Abstract: A power semiconductor structure with schottky diode is provided. In the step of forming the gate structure, a separated first polysilicon structure is also formed on the silicon substrate. Then, the silicon substrate is implanted with dopants by using the first polysilicon structure as a mask to form a body and a source region. Afterward, a dielectric layer is deposited on the silicon substrate and an open penetrating the dielectric layer and the first polysilicon structure is formed so as to expose the source region and the drain region below the body. The depth of the open is smaller than the greatest depth of the body. Then, a metal layer is filled into the open to electrically connect to the source region and the drain region.

Abstract: A fabrication method of a self-aligned power semiconductor structure is provided. Firstly, a trenched polysilicon gate is formed in a silicon substrate. Then, a self-aligned polysilicon extending structure is formed on the trenched polysilicon gate. A width of the self-aligned polysilicon extending structure is smaller than that of the trenched polysilicon gate. Thereafter, the self-aligned polysilicon extending structure is oxidized to form a silicon oxide protruding structure on the trenched polysilicon gate. Then, a first spacer is formed on a sidewall of the silicon oxide protruding structure to define a source contact window.

Abstract: A fabrication method of a trenched metal-oxide-semiconductor device is provided. Firstly, an epitaxial layer is formed on a substrate. Then, a plurality of gate trenches is formed in the epitaxial layer. Afterward, a spacer is formed on the sidewall of the trench gates. The spacer is utilized as a mask to selectively implant oxygen ion into the bottom of the gate trenches so as to form a bottom oxide layer on the bottom of the gate trenches to reduce capacitance between gate and drain.

Abstract: A fabrication method of a trenched power semiconductor structure with a schottky diode is provided. Firstly, a drain region is formed in a substrate. Next, at least two gate structures are formed above the drain region, and then, a body and at least a source region are formed between the two adjacent gate structures. Thereafter, a first dielectric structure is formed on the gate structure to shield the gate structure. Then, a contact window is formed in the body and has side surface thereof adjacent to the source region to expose the source region. Afterward, a second dielectric structure is formed in the contact window. Next, by using the second dielectric structure as an etching mask, the body is etched to form a narrow trench extending to the drain region below the body. Finally, a metal layer is filled into the contact window and the narrow trench.

Abstract: The invention relates to a rail-type solar tracking system with a focusing function. The invention includes a plurality of support elements, a Fresnel lens, a rail platform, a load bearing platform and a pushing device. The system moves a solar cell on the load bearing platform to a focus position where sunlight is focused by the Fresnel lens to collect solar energy. Hence, the invention collects solar energy without moving heavy lens so as to reduce power consumption and improve the electric power generating efficiency of the solar cell.

Abstract: A fabrication method of a trenched metal-oxide-semiconductor device is provided. Firstly, an epitaxial layer is formed on a substrate. Then, a plurality of gate trenches is formed in the epitaxial layer. Afterward, a spacer is formed on the sidewall of the trench gates. The spacer is utilized as a mask to selectively implant oxygen ion into the bottom of the gate trenches so as to form a bottom oxide layer on the bottom of the gate trenches to reduce capacitance between gate and drain.

Abstract: Control methods for a cell phone are provided upon occurrence of a particular event, which receive a contact-related information from a touch screen of the cell phone, analyze the contact-related information to identify the contact position, the number of contact objects, or a gesture, to determine a further step to deal with the particular event. The particular event may include receipt of a call, sounding of an alarm of the cell phone, displaying of a short message on the touch screen, receipt of an interrupting call, or a standby mode of the cell phone.

Abstract: A depth calculating method is provided for calculating corresponding depth data in response to frame data, which includes macroblocks. The depth calculating method includes the following steps. First, a type of video is decided according to a video content. A motion vector is obtained from decompressed video information and is modified according to a shot change detection and camera motion data. Then, multiple pieces of macroblock motion parallax data respectively corresponding to the macroblocks are found according to motion vector data of the modified macroblocks. Thereafter, the depth data corresponding to the frame data is calculated according to the pieces of macroblock motion parallax data, variance data, contrast data and texture gradient data.

Abstract: A fabrication method of a trenched metal-oxide-semiconductor device is provided. Firstly, an epitaxial layer is formed on a substrate. Then, a plurality of gate trenches is formed in the epitaxial layer. Afterward, a spacer is formed on the sidewall of the trench gates. The spacer is utilized as a mask to selectively implant oxygen ion into the bottom of the gate trenches so as to form a bottom oxide layer on the bottom of the gate trenches to reduce capacitance between gate and drain.

Abstract: A navigation system includes a touch screen for receiving a touch input and displaying a navigation map, mode-switching means for issuing a mode-switching command to switch the navigation system into an input mode, a memory for storing a database, and a controller to recognize a handwriting input or a gesture input to acquire an input information, search the database for a facility information corresponding to the input information, and show facilities represented by the facility information in the navigation map.

Abstract: The invention relates to a rail-type solar tracking system with a focusing function. The invention includes a plurality of support elements, a Fresnel lens, a rail platform, a load bearing platform and a pushing device. The system moves a solar cell on the load bearing platform to a focus position where sunlight is focused by the Fresnel lens to collect solar energy. Hence, the invention collects solar energy without moving heavy lens so as to reduce power consumption and improve the electric power generating efficiency of the solar cell.