Abstract: A touch display system includes a touch panel; a touch control chip configured to transmit a driving signal to the touch panel; an active pen configured to transmit a signal based on the driving signal of the touch control chip, the signal including two signal segments that are called a position signal and an ID signal, the touch control chip resolving the signal transmitted by the active pen to obtain an ID data carried by the ID signal and inquiring a property of the active pen corresponding to the ID data; and a display panel configured to display traces in accordance with the property of the active pen. Similar to the usage of a traditional marker pen, such an active panel is easily to be used by a user.

Abstract: The present disclosure provides a trench power semiconductor component and a manufacturing method thereof. The trench gate structure of the trench power semiconductor component is located in the at least one cell trench that is formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate electrode disposed above the shielding electrode, an insulating layer, an intermediate dielectric layer, and an inner dielectric layer. The insulating layer covers the inner wall surface of the cell trench. The intermediate dielectric layer interposed between the shielding electrode and the insulating layer has a bottom opening. The inner dielectric layer interposed between the shielding electrode and the intermediate dielectric layer is made of a material different from that of the intermediate dielectric layer, and fills the bottom opening so that the space of the cell trench beneath the shielding electrode is filled with the same material.

Abstract: An interactive game system is provided. The interactive game system includes a head-mounted device (HMD), a game suit, a battery and a ground pad. The HMD executes a virtual reality program and displays video information of the virtual reality program to a user. The game suit is worn by the user and connected to the HMD. The game suit includes wireless sensors. The battery provides power to the HMD. The ground pad includes wireless charging devices arranged in a matrix to provide power. When the wireless charging device detects an approaching wireless sensor, the position information of the wireless charging device is transmitted to the approaching wireless sensor and a signal indicating whether the battery needs to be charged is transmitted to the wireless charging device. If the battery needs to be charged, the wireless charging device charges the battery via the approaching wireless sensor.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes operations below. First, an epitaxial layer is formed on a substrate. Then, a trench is formed in the epitaxial layer. Then, a first dielectric layer and a shield layer are formed in the trench, in which the shield layer is embedded within the first dielectric layer. Then, a spacer layer is formed in the trench and on the first dielectric layer. Finally, a second dielectric layer and a gate are formed in the trench and on the spacer layer, and a source is formed in the epitaxial layer surrounding the trench, in which the gate is embedded within the second dielectric layer, and the source surrounds the gate.

Abstract: A termination structure of a semiconductor device is provided. The semiconductor device includes an active area and a termination area adjacent to the active area, in which the termination area has the termination structure. The termination structure includes a substrate, an epitaxy layer, a dielectric layer, a conductive material layer and a conductive layer. The epitaxy layer is disposed on the substrate and has a voltage-sustaining region. The voltage-sustaining region has trenches parallel to each other. The dielectric layer is disposed in the trenches and on a portion of the epitaxy layer. The conductive material layer is disposed on the dielectric layer in the trenches. The conductive layer covers the trenches, and is in contact with the conductive material layer and a portion of the epitaxy layer, and is electrically connected between the active area and the termination area. A method for manufacturing the termination structure is also provided.

Abstract: An electronic lock in which new passcodes can be added and/or deleted without specifying the user slot to which the new passcode should be assigned. A circuit in the electronic lock determines whether the new passcode to be added is unique compared to existing passcodes stored in memory. If so, the circuit searches for an available user slot for which no authorized passcodes are associated and associates the new passcode with an available user slot.

Abstract: An interactive game system is provided. The interactive game system includes a head-mounted device (HMD), a game suit, a battery and a ground pad. The HMD executes a virtual reality program and displays video information of the virtual reality program to a user. The game suit is worn by the user and connected to the HMD. The game suit includes wireless sensors. The battery provides power to the HMD. The ground pad includes wireless charging devices arranged in a matrix to provide power. When the wireless charging device detects an approaching wireless sensor, the position information of the wireless charging device is transmitted to the approaching wireless sensor and a signal indicating whether the battery needs to be charged is transmitted to the wireless charging device. If the battery needs to be charged, the wireless charging device charges the battery via the approaching wireless sensor.

Abstract: A termination structure of a semiconductor device is provided. The semiconductor device includes an active area and a termination area adjacent to the active area, in which the termination area has the termination structure. The termination structure includes a substrate, an epitaxy layer, a dielectric layer, a conductive material layer and a conductive layer. The epitaxy layer is disposed on the substrate and has a voltage-sustaining region. The voltage-sustaining region has trenches parallel to each other. The dielectric layer is disposed in the trenches and on a portion of the epitaxy layer. The conductive material layer is disposed on the dielectric layer in the trenches. The conductive layer covers the trenches, and is in contact with the conductive material layer and a portion of the epitaxy layer, and is electrically connected between the active area and the termination area. A method for manufacturing the termination structure is also provided.

Abstract: A filter for a hemodialysis apparatus is provided, which includes: a first cover member, a second cover member coupled to the first cover member, and a membrane disposed in a chamber of the first cover member. The membrane has a first membrane layer and two second membrane layers respectively bonded to two opposite sides of the first membrane layer. A plurality of first ridges and second ridges are formed on a side surface of the second cover member, spaced apart from one another and having different widths so as to increase the friction force. The non-directional three-layer structure of the membrane has a high water pressure resistance, greatly reduces the chance of fluid leakage, and avoids erroneous disposition.

Abstract: A method of manufacturing super junction device includes forming a first epitaxial layer on a semiconductor substrate. The first epitaxial layer is patterned to form a trench. The trench has a first sidewall region, a second sidewall region and a bottom region. The bottom region is positioned in between the first and second sidewall regions. A second epitaxial layer is formed on the first sidewall region, the second sidewall region and the bottom region. A portion of the second epitaxial layer on the first sidewall region and the second sidewall region is removed. An oxide layer in contact with the second epitaxial layer is formed. A gate layer in contact with the oxide layer is formed.

Abstract: A termination structure of a semiconductor device is provided. The semiconductor device includes an active area and a termination area adjacent to the active area, in which the termination area has the termination structure. The termination structure includes a substrate, an epitaxy layer, a dielectric layer, a conductive material layer and a conductive layer. The epitaxy layer is disposed on the substrate and has a voltage-sustaining region. The voltage-sustaining region has trenches parallel to each other. The dielectric layer is disposed in the trenches and on a portion of the epitaxy layer. The conductive material layer is disposed on the dielectric layer in the trenches. The conductive layer covers the trenches, and is in contact with the conductive material layer and a portion of the epitaxy layer, and is electrically connected between the active area and the termination area. A method for manufacturing the termination structure is also provided.

Abstract: An electronic apparatus wearable for a user and a display control method thereof are provided. The electronic apparatus includes an interactive display device, a supplementary input device and a processor device. The interactive display device displays a user interface. The processor device coupled to the interactive display device and the supplementary input device detects a clockwise movement and a counter-clockwise movement performed on the supplementary input device, wherein the clockwise movement and the counter-clockwise movement are associated with a function under an operation mode of the electronic apparatus. When one of the clockwise movement and the counter-clockwise movement is detected, the processor device correspondingly performs is the function. When the function is an interface rotation function, the processor device rotates the user interface on the interactive display device in accordance with the detected clockwise movement and the detected counter-clockwise movement.

Abstract: A system includes first electronic devices and a digital signature carrier. Each of the first electronic devices has a network identifier distinct from another. The digital signature carrier is configured for recording a connective information list. The connective information list includes the network identifiers of all of the first electronic devices. A second electronic device includes a digital signature reader. The second electronic device is configured to read the digital signature carrier by the digital signature reader, extract the connective information list comprising the network identifiers and pair the second electronic device with each of the first electronic devices according to the network identifiers.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes operations below. First, an epitaxial layer is formed on a substrate. Then, a trench is formed in the epitaxial layer. Then, a first dielectric layer and a shield layer are formed in the trench, in which the shield layer is embedded within the first dielectric layer. Then, a spacer layer is formed in the trench and on the first dielectric layer. Finally, a second dielectric layer and a gate are formed in the trench and on the spacer layer, and a source is formed in the epitaxial layer surrounding the trench, in which the gate is embedded within the second dielectric layer, and the source surrounds the gate.

Abstract: A method and an apparatus for advising physical condition and a recording medium using the method are provided. In the method, multiple sensing devices are configured for a user to measure data related to the physical condition of the user. The data measured by the sensing devices is collected and integrated to estimate a current physical condition of the user. An advice is concluded at least based on the current physical condition of the user, and prompted for the user.

Abstract: A package structure and a packaging method of wafer level chip scale package are provided. The packaging method includes: providing a carrier, and disposing a plurality of chips on the carrier; forming a plurality of adhesive layers on a surface of the corresponding chips; covering a conductive cover plate, bonding the conductive cover plate with the chips through the adhesive layers, and dividing out a plurality of packaging spaces by the conductive cover plate for disposing the chips respectively; and providing an insulation material to fill the packaging spaces through via holes on the conductive cover plate to form a first insulation structure; finally, removing the carrier.

Abstract: A trenched power semiconductor device with enhanced breakdown voltage is provided. The trenched power semiconductor device has a first trench penetrating the body region located between two neighboring gate trenches. A polysilicon structure with a conductivity type identical to that of the body region is located in a lower portion of the first trench and spaced from the body region with a predetermined distance. A dielectric structure is located on the polysilicon structure and at least extended to the body region. Source regions are located in an upper portion of the body region. A heavily doped region located in the body region is extended to the bottom of the body region. A conductive structure is electrically connected to the heavily doped region and the source region.

Abstract: A termination structure of a semiconductor device is provided. The semiconductor device includes an active area and a termination area adjacent to the active area, in which the termination area has the termination structure. The termination structure includes a substrate, an epitaxy layer, a dielectric layer, a conductive material layer and a conductive layer. The epitaxy layer is disposed on the substrate and has a voltage-sustaining region. The voltage-sustaining region has trenches parallel to each other. The dielectric layer is disposed in the trenches and on a portion of the epitaxy layer. The conductive material layer is disposed on the dielectric layer in the trenches. The conductive layer covers the trenches, and is in contact with the conductive material layer and a portion of the epitaxy layer, and is electrically connected between the active area and the termination area. A method for manufacturing the termination structure is also provided.

Abstract: A distributed antenna in-door locating system has multiple antenna units, a head unit and a locating unit. The head unit is wired connected to the multiple antenna units respectively to assign a RF communication band to each user device. The locating unit is connected to the head unit and has a build-in locating process comprising steps of: (a) reading the assigned RF communication bands, and signal strength of RF signals in the assigned RF communication bands. (b) determining a location of each user device based on the assigned RF communication bands of each antenna unit and the signal strength of RF signals in the assigned RF communication bands. A administrator of the distributed antenna in-door locating system can obtain the location of each user device, and further obtain suitable locations for mounting the multiple antenna units in the area.

Abstract: A package structure and a packaging method of wafer level chip scale package are provided. The packaging method includes: providing a carrier, and disposing a plurality of chips on the carrier; forming a plurality of adhesive layers on a surface of the corresponding chips; covering a conductive cover plate, bonding the conductive cover plate with the chips through the adhesive layers, and dividing out a plurality of packaging spaces by the conductive cover plate for disposing the chips respectively; and providing an insulation material to fill the packaging spaces through via holes on the conductive cover plate to form a first insulation structure; finally, removing the carrier.