Abstract: Laser-personalizable security articles include a multi-layer security document and an optically transparent processing tape. The multi-layer security document includes an optically transparent cover layer, a composite image and an imagable layer adjacent to the cover layer. The first surface of the cover layer is at least partially a microstructured surface, where the microstructured surface forms microlenses or a lenticular surface. The composite image is made by a collection of complete or partial images viewed through the microstructured surface of the cover layer. The composite image is located on or within the second surface of the cover layer. The imagable layer is a laser. The optically transparent processing tape sufficiently wets out on the misconstructured surface to render the microstructured surface invisible to a writing laser.

Abstract: A method for anisotropically etching a feature in a Cu-containing layer includes providing a substrate having a Cu-containing layer and a patterned etch mask formed on the Cu-containing layer such that on exposed Cu-containing layer is exposed to processing through the patterned etch mask, passivating a first surface of the exposed Cu-containing layer, and inhibiting passivation of a second surface of the Cu-containing layer. A Cu compound is formed on said second surface of the Cu-containing layer, and the Cu compound is removed from the second surface of the Cu-containing layer to anisotropically etch a feature in the Cu-containing layer.

Abstract: The present invention relate to a bus network having a safety gate of a substantial safety isolation type. The bus network comprises a first region, a second region, and signal isolators. The first region has disposed therein a first bus and has distributed therein one or more first processing devices, one or more first transceivers, one or more first controllers, and one or more gateways. The second region has disposed therein a second bus and has distributed therein one or more second processing devices and one or more second transceivers. The signal isolators are disposed between the first region and the second region. An isolation device driving terminal and an output terminal on one side of the signal isolator are respectively connected to a transmitting terminal and a receiving terminal of a second controller.

Abstract: A method for producing a substantially spherical metal powder is described. A particulate source metal includes a primary particulate and has an average starting particle size. The particulate source metal is optionally ball milled and mixed with a binder in a solvent to form a slurry. The slurry is granulated to form substantially spherical granules, wherein each granule comprises an agglomeration of particulate source metal in the binder. The granules are debinded at a debinding temperature to remove the binder from the granules forming debinded granules. The debinded granules are at least partially sintered at a sintering temperature such that particles within each granule fuse together to form partially or fully sintered solid granules. The granules can then be optionally recovered to form a substantially spherical metal powder.

Abstract: Methods and apparatus for forming FinFET structures are provided. Selective etching and deposition processes described herein may provide for FinFET manufacturing without the utilization of multiple patterning processes. Embodiments described herein also provide for fin material manufacturing methods for transitioning from silicon to III-V materials while maintaining acceptable crystal lattice orientations of the various materials utilized. Further embodiments provide etching apparatus which may be utilized to perform the methods described herein.

Abstract: Embodiments of the present disclosure provide methods for forming nanowire structures with desired materials for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of forming nanowire structures on a substrate includes forming a multi-material layer on a substrate, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the substrate further comprising a patterned hardmask layer disposed on the multi-material layer, etching the multi-material layer through openings defined by the patterned hardmask layer to expose sidewalls of the first and the second layer of the multi-material layer, and laterally and selectively etching the second layer from the substrate.

Abstract: A method for determining whether to allow performance of an inter-radio access technology (IRAT) transition is provided. The method can include a wireless communication device determining a realized quality of service (QoS) for packet switched data traffic on a first radio access technology (RAT); determining whether the realized QoS satisfies a threshold QoS; suspending IRAT transition to a second RAT in an instance in which it is determined that the realized QoS satisfies the threshold QoS; and allowing IRAT transition to the second RAT in an instance in which it is determined that the realized QoS does not satisfy the threshold QoS.

Abstract: The present invention generally relates to a novel method for the characterization and quantification of involatile macromolecules in hydrocarbon samples of crude oil. More particularly, the method utilizes pyrolysis/gas chromatography/mass spectrometry (PY/GC/MS, PY/GC/MS/MS or PY/GC/triple quad MS) to detect and quantify polymeric asphaltene inhibitors in crude oil.

Abstract: The present invention is an adhesive composition for stabilizing an electrical conductor. The adhesive composition includes a base polymer and an additive to interfere with photo-oxidation of metals. When the adhesive composition is in contact with the electrical conductor, the electrical conductor has less than about a 20% change in electrical resistance over a period of about 500 hours of light exposure.

Abstract: Methods implemented in an electronic device are disclosed for checkpoint and rollback recovery in a SDN system. The method utilizes message identifiers to indicate an order of consistent states of forwarding tables of a plurality of network elements of the SDN system. The SDN controller of the SDN system receives a request to recover the network to a previous state, and identifies a consistent state of forwarding table for each of the plurality of network elements utilizing the message identifiers associated the consistent states, where the identified consistent states represent the previous state of the network without the identified consistent states being captured at the same time at the plurality of network elements. The SDN controller indicates the identified consistent state for each of the plurality of the network elements to a corresponding network element, where the corresponding network element makes its forwarding table consistent with the identified consistent state.

Abstract: The present invention provides array substrate, manufacturing method thereof, and display device, relating to manufacturing technology field of liquid crystal display. The array substrate of the present invention includes: a base substrate, on which a plurality of gate lines and a plurality of data lines are provided; shielding electrodes, which are provided above and electrically insulated from the data lines, and the shielding electrodes at least partially cover the data lines; first electrodes, which are provided in the same layer as the shielding electrodes and are electrically insulated from the shielding electrodes; second electrodes, which are provided above and electrically insulated from the first electrodes, wherein, the shielding electrodes are applied with a shielding voltage signal, the second electrodes are applied with a stable voltage signal, and no electric field or weak electric filed is formed between the shielding electrodes and the second electrodes.

Abstract: A semiconductor device is formed by first providing a dual gate semiconductor device structure having FET pair precursors, which includes an nFET precursor and a pFET precursor, wherein each of the nFET precursor and the pFET precursor includes a dummy gate structure. At least one protective layer is deposited across the FET pair precursors, leaving the dummy gate structures exposed. The dummy gate structure is removed from one of the nFET precursor and the pFET precursor to create therein one of an nFET gate hole and a pFET gate hole, respectively. A fill is deposited into the formed one of the nFET gate hole and the pFET gate.

Abstract: A method is implemented by a computing device in communication with a network having a plurality of switches. The method performs path correctness testing where the path defines a service chain associated with a flow of data. The method configures the plurality of switches using a flow control protocol. The method includes the steps of selecting a switch from the path to configure path correctness testing, sending a configuration request to the selected switch to instate at least one rule for testing path correctness, receiving copies of flow packets from at least one switch in the path, and comparing the copies of flow packets with a service chain configuration of the flow to confirm path correctness.

Abstract: Methods implemented in an electronic device are disclosed for dynamically collecting traffic flow in a SDN system. For each of a plurality of sets of traffic flows, the method causes a monitor to be configured to collect traffic statistics. The monitors are instructed to collect traffic statistics, and the traffic statistics are received. For each monitor, the method determines if the received traffic statistics are within a set of acceptable limits or not, wherein the set of acceptable limits includes one or more of an upper bound and a lower bound. For each of the sets of traffic flows of which the received traffic statistics were determined outside of the acceptable limits, the method causes a change of increase or decrease of collection of the traffic statistics of the traffic flows.

Abstract: Disclosed are a paging method, apparatus, and system, used for solving the problems in the prior art of long time lapse and low paging reception reliability in terminals when using an extended DRX cycle to carry out monitoring. The method in the embodiments of this invention comprises: a terminal performs paging reception in an extended paging location within each extended paging cycle; and within at least one extended paging cycle, the terminal performs paging retransmission reception in at least one specific paging location other than the extended paging location. As the terminal performs paging reception at least twice within at least one extended paging cycle, the embodiments of the present invention may improve terminal power-saving and also ensure the time lapse and reliability of paging reception, thereby achieving the aims of assuring user experience and improving system performance.

Abstract: A display substrate, a preparing method thereof, and a display device are disclosed; the display substrate comprises a display region, a non-display region, and a transparent support enhancement layer, the support enhancement layer is disposed at least in a region corresponding to the display region. The display substrate is not easy to be damaged by pressure, and can efficiently avoid a phenomenon of display defects of a display device.

Abstract: An etching method comprises etching an oxide layer with a first dc bias of a plasma chamber, removing a photoresist layer with a second dc bias of the plasma chamber and etching through a liner film with a third dc bias of the plasma chamber. In order to reduce the copper deposition on the wall of the plasma chamber, the third dc bias is set to be less than the first and second dc bias.

Abstract: An embodiment integrated circuit device and a method of making the same. The embodiment integrated circuit includes a substrate supporting a source with a first doping type and a drain with a second doping type on opposing sides of a channel region in the substrate, and a pocket disposed in the channel region, the pocket having the second doping type and spaced apart from the drain between about 2 nm and about 15 nm. In an embodiment, the pocket has a depth of between about 1 nanometer to about 30 nanometers.

Abstract: A contact structure includes a permanent antireflection coating formed on a substrate having contact pads. A patterned dielectric layer is formed on the antireflective coating. The patterned dielectric layer and the permanent antireflective coating form openings. The openings correspond with locations of the contact pads. Contact structures are formed in the openings to make electrical contact with the contacts pads such that the patterned dielectric layer and the permanent antireflective coating each have a conductively filled region forming the contact structures.

Abstract: A CAN bus explosion proof node structure is disclosed which includes a physical parameter sensor, a physical parameter measurement circuit, a master controller, a data storage module, a communication interface module, and a power voltage and current limiting module. The master controller performs service processing of the digital signals, compares them with respective threshold levels to determine whether dangerous situations occur for the explosion proof node, and sends out an alarm when dangerous situations occur for the explosion proof node. The power voltage and current limiting module limits a maximum open circuit voltage and a maximum short circuit current of input power so that explosive gas and dust will not ignite when the nodes are in normal operation or experience failures.