Abstract: A method of fabricating an electronic chip on a wafer in which a first mask at a predetermined lower resolution is developed on the wafer and then etched under a first set of conditions for a predetermined period to achieve a mask that is below the resolution limit of current lithography. The etched mask is then used as a hard mask for etching material on a lower layer.

Abstract: A method (and structure formed thereby) of forming a metal silicide contact on a non-planar silicon containing region having controlled consumption of the silicon containing region, includes forming a blanket metal layer over the silicon containing region, forming a silicon layer over the metal layer, etching anisotropically and selectively with respect to the metal the silicon layer, reacting the metal with silicon at a first temperature to form a metal silicon alloy, etching unreacted portions of the metal layer, annealing at a second temperature to form an alloy of metal-Si2, and selectively etching the unreacted silicon layer.

Abstract: A process for making abrupt, e.g. <20 nm/decade, PN junctions and haloes in, e.g., CMOSFETs having gate lengths of, e.g. <50 nm, uses a mask, e.g., sidewall spacers, during ion implantation of gate, source, and drain regions. The mask is removed after source-drain activation by annealing and source and drain extension regions are then implanted. Then the extension regions are activated. Thereafter halo regions are implanted and activated preferably using spike annealing to prevent their diffusion. The process can also be used to make diodes, bipolar transistors, etc. The activation annealing steps can be combined into a single step near the end of the process.

Abstract: A method of forming a notched gate structure having substantially vertical sidewalls and a sub-0.05 &mgr;m electrical critical dimension is provided. The method includes forming a conductive layer on an insulating layer; forming a mask on the conductive layer so as to at least protect a portion of the conductive layer; anisotropically etching the conductive layer not protected by the mask so as to thin the conductive layer to a predetermined thickness and to form a conductive feature underlying the mask, the conductive feature having substantially vertical sidewalls; forming a passivating layer at least on the substantially vertical sidewalls; and isotropically etching remaining conductive layer not protected by the mask to remove the predetermined thickness thereby exposing a lower portion of said conductive feature not containing the passivating layer, while simultaneously removing notched regions in the lower portion of the conductive feature.

Abstract: Media for growth enhancement and resuscitation of mycobacteria (such as Mycobacterium tuberculosis, Mycobacterium paratuberculosis, and Mycobacterium leprae) are provided. The media comprise isolated cell extract, early-stationary-phase or stationary phase supernatant, or a substantially purified component thereof such as a protein, a peptide fragment of the protein, or a phospholipid. The protein is Rv1147c and the phospholipid or a component of a phospholipid. Diagnostic methods and kits utilizing the media are also provided, as well as treatment methods utilizing spent culture supernatant and cell extracts, or components thereof.

Abstract: A patterned buried insulator is formed beneath the source and drain by forming a mask over the body area and implanting a dose of n or p type ions in the areas where the source and drains will be formed, then etching the STI and etching out the implanted area. A light oxidation is followed by a conformal oxide deposition in the STI and also in the etched area, thereby forming the buried oxide only where desired.

Abstract: A method of developing a configuration for encoding a data glyph block such that the data capacity of the data glyph block is maximized or made optimal. The method of forming an encoded configuration for a data glyph block containing one or more occlusions includes performing one or more of cut off of one or more occlusions, enlargement of one or more occlusions and merger of two or more occlusions, and encoding the cut off, enlarged or merged occlusions with synchronization lines, and encoding any remaining occlusions by error correction, thereby forming the encoded configuration. A method of embedding a data glyph block containing occlusions into an image by halftone rendering of glyph marks, again preferably with the data glyph block having maximal or optimal data capacity, is also set forth.

Abstract: A method for conditioning the inside walls of a process chamber is described incorporating a selected process gas such as Br, Br2, HBr, Cl2, HCl, F2, SiFx, and NF3, a pressure controller, and a timer for soaking the chamber. The invention overcomes the problem of running dummy product wafers to condition the chamber.

Abstract: The present invention includes a charge pump circuit to raise a voltage including a voltage source to generate the voltage to be raised, a pair of switches to switch the voltage to a capacitor with the first pair of switches operating during different periods of time and a second pair of switches to switch additional voltage to the capacitor with the second pair of switches operating during different periods of time.

Abstract: A process for making abrupt, e.g. <20 nm/decade, PN junctions and haloes in, e.g., CMOSFETs having gate lengths of, e.g. <50 nm, uses a mask, e.g., sidewall spacers, during ion implantation of gate, source, and drain regions. The mask is removed after source-drain activation by annealing and source and drain extension regions are then implanted. Then the extension regions are activated. Thereafter halo regions are implanted and activated preferably using spike annealing to prevent their diffusion. The process can also be used to make diodes, bipolar transistors, etc. The activation annealing steps can be combined into a single step near the end of the process.

Abstract: A patterned buried insulator is formed beneath the source and drain by forming a mask over the body area and implanting a dose of n or p type ions in the areas where the source and drains will be formed, then etching the STI and etching out the implanted area. A light oxidation is followed by a conformal oxide deposition in the STI and also in the etched area, thereby forming the buried oxide only where desired.

Abstract: A method for changing the surface termination of a perovskite substrate surface, an example of which is the conversion of B-site terminations of a single-crystal STO substrate to A-site terminations. The method generally comprises the steps of etching the substrate surface by applying a reactive plasma thereto in the presence of fluorine or another halogen, and then annealing the substrate at a temperature sufficient to regenerate a long range order of the surface, i.e., the surface termination contributes to a better long range order in a film epitaxially grown on the surface. More particularly, the resulting substrate surfaces predominantly contains A-site surface terminations, i.e., SrO for STO (100) substrates. As a result, disadvantages associated with B-site terminated perovskite substrate surfaces are avoided. A suitable etching treatment is a low power oxygen ashing in the presence of low halogen levels.

Abstract: The present invention provides for optimal extraction conditions for extracting yellow mustard gum from yellow mustard bran to provide for high yield. The four variables examined were extraction temperature, pH, water:solid ratio and extraction time. Of these variables, temperature and pH had a much greater influence on the yield and rheological properties of the extracted gum compared to water/solid ratio and extraction time. Optimum extraction conditions were temperatures between 50-70° C., pH 7-10, water/solid ratio of 40:1-60:1 and extraction time of 2-2.5 hr. The yield of gum obtained under the optimum extraction conditions was 30% of bran weight. The extracted gum exhibited maximum shear thinning flow behaviours. It can be incorporated into cosmetic products and skin lotions.

Abstract: A nucleotide sequence encoding a katG/lacZ fusion protein is useful for assaying the enzymatic activity of the katG gene product. A process of selecting a compound that is toxic against an isoniazid-resistant mycobaterial strain comprises incubating a catalase peroxidase enzyme with an isoniazid to produce a compound that restores isoniazid susceptability to the isoniazid-resistant mycobaterial strain.

Abstract: In a dual-damascene processes for multi level interconnection a method for forming trenches and vias in the inter-insulation is accomplished without etching out the inter-insulation layer. A thick sacrificial layer is first deposited and reversed etched to form sacrificial pillars 64 forming the vias and sacrificial bridges 72 forming the trenches. The sacrificial layer can be any material (insulator, semiconductor, or metal), provided it can be easily patterned and selectively removed later over the inter insulator layer. Thereafter a low-k inter-insulation layer is deposited around the sacrificial pillars and bridges. It is these sacrificial pillars and bridges that are etched away leaving behind vias and trenches in the inter-insulation layer. An advantage of the invention is that it replaces a difficult RIE process of vias and trenches with a much easier RIE of sacrificial pillars and bridges.

Abstract: sigF is a gene that controls M. tuberculosis latency. A diagnostic test for latent tuberculosis involves detecting M. tuberculosis sigF in clinical specimens. Two genes orfX and orfY regulate sigF expression and sigF activity. M. tuberculosis sigF, orfX, and orfY are used in screening methods for potential therapeutic agents which regulate the growth of M. tuberculosis.

Abstract: The present invention is a replacement for petroleum jelly as a base for products suitable for application to the skin. It is comprised of vegetable oil and silica. The vegetable oil is preferably a canola oil and more preferably a high oleic acid/low linolenic acid canola oil. The silica is preferably untreated fumed silica powder. The vegetable oil is preferably present in the range of 50-90% and most preferably 80%. The silica is present in the range of 5-15% and most preferably 10%. Other ingredients which may be added include vitamin E, margarine or butter, starch, and sunscreen. The base of the present invention has a significantly higher melting temperature than petroleum jelly.

Abstract: Multi-drug resistant strains of Mycobacterium tuberculosis represent a considerable threat to public health worldwide. Resistance to isoniazid (INH), a key component of anti-tuberculosis regimens, is often associated with loss of catalase activity and virulence. The katG gene, encoding HPI catalase-peroxidase, mediates INH-sensitivity and that the high level resistance encountered clinically may be due to deletions, insertions or point mutations which reduce or eliminate the expression of the catalase gene in the chromosomal region encompassing katG. INH-resistant strains of Mycobacterium tuberculosis are detected by nucleic acid hybridization with a unique nucleic acid sequence or by amplification techniques.

Abstract: A process for the detection of resistance to an antibiotic in a mycobacterium comprises detecting a mutation in a gene selected from the group consisting of the katG gene or fragment thereof, the rpoB gene or fragment thereof, and the rpsI gene or fragment thereof. The process is useful for detecting in vitro the presence of nucleic acids of a Mycobacterium tuberculosis resistant to isoniazid.

Abstract: Disclosed are methods, probes, primers and kits for identifying pyrazinamide-resistant mycobacteria. These methods can be used to distinguish M. bovis from M. tuberculosis, as well as to identify additional pyrazinamide-resistant mycobacteria. Also disclosed are methods for treating mycobacterial infections by expressing a pncA gene in mycobacteria that infect a mammal, and treating the mammal with pyrazinamide. The invention derives from the discovery of that the molecular basis for pyrazinamide resistance is an alteration in the pncA gene of mycobacteria. The detection of such an alteration is an indicator of PZA-resistant mycobacteria.