Abstract: One variation of a method for autonomously scanning and processing a part includes: accessing a part model representing a part positioned in a work zone adjacent a robotic system; retrieving a sanding head translation speed; retrieving a toolpath for execution on the part defining positions, orientations, and target forces applied by the sanding head to the part. The method includes traversing the sanding head along the toolpath, at the sanding head translation speed; reading a sequence of applied forces from a force sensor coupled to the sanding head at positions along the toolpath; and deviating from the toolpath to maintain the set of applied forces within a threshold difference of a sequence of target forces along the toolpath. In one variation of the method, the robotic system executes a toolpath at a duration less than target duration by selectively varying target force and sanding head translation speed across the part.

Abstract: A method includes: accessing a toolpath and processing parameters—including a target force and feed rate—assigned to a region of a workpiece; and accessing a wear model representing abrasive degradation of a sanding pad arranged on a sanding head. The method also includes, during a processing cycle: accessing force values output by a force sensor 199 coupled to the sanding head; navigating the sanding head across the workpiece region according to the toolpath and, based on the force values deviating the sanding head from the toolpath to maintain forces of the sanding head on the workpiece region proximal the target force; accessing contact characteristics representing contact between the sanding pad and the workpiece; estimating abrasive degradation of the sanding pad based on the wear model and the sequence of contact characteristics; and modifying the set of processing parameters based on the abrasive degradation.

Abstract: A method of forming a semiconductor memory device includes the following steps. First of all, a substrate is provided, and a plurality of gates is formed in the substrate, along a first direction. Next, a semiconductor layer is formed on the substrate, covering the gates, and a plug is then in the semiconductor layer, between two of the gates. Then, a deposition process is performed to from a stacked structure on the semiconductor layer. Finally, the stacked structure is patterned to form a plurality of bit lines, with one of the bit lines directly in contact with the plug.

Abstract: Recovering a private key for a decentralized application transaction is described. Reset information corresponding to a user is sent. An access token that corresponds to the user is received. The access token is sent. A credential to enable the first computing environment to access a third party security service to decrypt encrypted private key information is received. A request for the encrypted private key information is sent. The encrypted private key information is received. The credential and the encrypted private key information is sent. The decrypted private key information is received.

Abstract: A monitor wafer is provided. The monitor wafer includes a substrate and a cleaning layer. The cleaning layer is disposed on a bottom surface of the substrate. The cleaning layer is configured to remove particles from the substrate and/or a processing tool.

Abstract: A display panel includes a substrate, first, second, and third data lines, scan lines, a first active device, a second active device, and pixel electrodes. The first and the third data lines have a first polarity. The second data line has a second polarity. The first polarity is different from the second polarity. A source electrode of the first active device disposed between the first data line and the second data line is electrically connected to the first data line. An extension region of the semiconductor pattern of the first active device extends toward and overlaps the second data line. A source electrode of the second active device disposed between the second data line and the third data line is electrically connected to the second data line. An extension region of the semiconductor pattern of the second active device extends toward and overlaps the third data line.

Abstract: One variation of a method for autonomously scanning and processing a part includes: accessing a part model representing a part positioned in a work zone adjacent a robotic system; retrieving a sanding head translation speed; retrieving a toolpath for execution on the part defining positions, orientations, and target forces applied by the sanding head to the part. The method includes traversing the sanding head along the toolpath, at the sanding head translation speed; reading a sequence of applied forces from a force sensor coupled to the sanding head at positions along the toolpath; and deviating from the toolpath to maintain the set of applied forces within a threshold difference of a sequence of target forces along the toolpath. In one variation of the method, the robotic system executes a toolpath at a duration less than target duration by selectively varying target force and sanding head translation speed across the part.

Abstract: A method includes: accessing a toolpath and processing parameters—including a target force and feed rate—assigned to a region of a workpiece; and accessing a wear model representing abrasive degradation of a sanding pad arranged on a sanding head. The method also includes, during a processing cycle: accessing force values output by a force sensor 199 coupled to the sanding head; navigating the sanding head across the workpiece region according to the toolpath and, based on the force values deviating the sanding head from the toolpath to maintain forces of the sanding head on the workpiece region proximal the target force; accessing contact characteristics representing contact between the sanding pad and the workpiece; estimating abrasive degradation of the sanding pad based on the wear model and the sequence of contact characteristics; and modifying the set of processing parameters based on the abrasive degradation.

Abstract: A power converter is provided. The power converter includes a housing, a heat dissipation module, and a first circuit board. The housing forms a receiving space, wherein the housing includes a first housing port and a second housing port. The heat dissipation module is detachably connected to the housing, and disposed in the receiving space. The heat dissipation module includes an inner path that communicates the first housing port with the second housing port. Working fluid enters the inner path via the first housing port. The working fluid leaves the inner path via the second housing port. The first circuit board includes a first circuit board body and a first heat source, wherein the first heat source is disposed on the first circuit board body, and the first heat source is thermally connected to the inner path of the heat dissipation module.

Abstract: A wireless node device includes a neural network module, a wireless network communication circuit, and a control circuit. The neural network module has a plurality of trained parameters. The control circuit is coupled to the neural network module and the wireless network communication circuit. The control circuit obtains, from the wireless network communication circuit, a plurality of current state data corresponding to a plurality of time points, and loads the neural network module to obtain estimated network data based on the current state data. The control circuit controls the wireless network communication circuit according to the estimated network data.

Abstract: A method of forming a semiconductor memory device includes the following steps. First of all, a substrate is provided, and a plurality of gates is formed in the substrate, along a first direction. Next, a semiconductor layer is formed on the substrate, covering the gates, and a plug is then in the semiconductor layer, between two of the gates. Then, a deposition process is performed to from a stacked structure on the semiconductor layer. Finally, the stacked structure is patterned to form a plurality of bit lines, with one of the bit lines directly in contact with the plug.

Abstract: This disclosure relates to techniques for performing encryption and decryption operations and that provide fully non-custodial data management, i.e., where end-users have control over their data—rather than a third party. Specifically, the techniques disclosed herein are configured to allow end-users to have the ability to recover and/or maintain access to data stored on third-party systems—even if one or more third-party entities storing the data are no longer in compliance with a predetermined set of operational criteria. In other implementations, novel split private key generation techniques are disclosed, wherein a newly-generated private key may be split into at least three shards, e.g., an authentication service provider shard, a shard for another entity, and a “recovery” shard. In still other implementations, an iFrame may decrypt separate shards of a private key using a delegated key management system (DKMS) and then use the reconstructed private key to sign a digital transaction.

Abstract: An electronic device, including an active device substrate, an insulation film, a vertical wire, and an anisotropic conductive adhesive, is provided. The active device substrate includes a substrate, a first wire, and a second wire. The first wire is configured on a first surface of the substrate, the second wire is configured on a second surface of the substrate, and a side surface connects the first surface to the second surface that is opposite to the first surface. The insulation film is configured on the side surface of the substrate. The vertical wire is configured on a surface of the insulation film and is located between the insulation film and the side surface of the substrate. The anisotropic conductive adhesive is configured between the vertical wire and the side surface of the substrate and electrically connects the vertical wire to the first wire and the second wire.

Abstract: A method of forming a semiconductor memory device includes the following steps. First of all, a substrate is provided, and a plurality of gates is formed in the substrate, along a first direction. Next, a semiconductor layer is formed on the substrate, covering the gates, and a plug is then in the semiconductor layer, between two of the gates. Then, a deposition process is performed to from a stacked structure on the semiconductor layer. Finally, the stacked structure is patterned to form a plurality of bit lines, with one of the bit lines directly in contact with the plug.

Abstract: A method for fabricating buried word line of a dynamic random access memory (DRAM) includes the steps of: forming a trench in a substrate; forming a first conductive layer in the trench; forming a second conductive layer on the first conductive layer, in which the second conductive layer above the substrate and the second conductive layer below the substrate comprise different thickness; and forming a third conductive layer on the second conductive layer to fill the trench.

Abstract: A mechanism for building decentralized computer applications that execute on a distributed computing system. The present technology works within a web browser, client application, or other software and provides access to decentralized computer applications through the browser. The present technology is non-custodial, wherein a public-private key pair, which represents user identity, is created on a client machine and then directly encrypted by a third-party platform without relying on one centralized computing system.

Abstract: This disclosure relates to techniques for performing encryption and decryption operations and that provide fully non-custodial data management, i.e., where end-users have control over their data—rather than a third party. Specifically, the techniques disclosed herein are configured to allow end-users to have the ability to recover and/or maintain access to data stored on third-party systems—even if one or more third-party entities storing the data are no longer in compliance with a predetermined set of operational criteria. In other implementations, novel split private key generation techniques are disclosed, wherein a newly-generated private key may be split into at least three shards, e.g., an authentication service provider shard, a shard for another entity, and a “recovery” shard. In still other implementations, an iFrame may decrypt separate shards of a private key using a delegated key management system (DKMS) and then use the reconstructed private key to sign a digital transaction.

Abstract: A method of forming a semiconductor memory device includes the following steps. First of all, a substrate is provided, and a plurality of gates is formed in the substrate, along a first direction. Next, a semiconductor layer is formed on the substrate, covering the gates, and a plug is then in the semiconductor layer, between two of the gates. Then, a deposition process is performed to from a stacked structure on the semiconductor layer. Finally, the stacked structure is patterned to form a plurality of bit lines, with one of the bit lines directly in contact with the plug.

Abstract: A monitor wafer is provided. The monitor wafer includes a substrate and a cleaning layer. The cleaning layer is disposed on a bottom surface of the substrate. The cleaning layer is configured to remove particles from the substrate and/or a processing tool.

Abstract: A display panel includes a substrate, first, second, and third data lines, scan lines, a first active device, a second active device, and pixel electrodes. The first and the third data lines have a first polarity. The second data line has a second polarity. The first polarity is different from the second polarity. A source electrode of the first active device disposed between the first data line and the second data line is electrically connected to the first data line. An extension region of the semiconductor pattern of the first active device extends toward and overlaps the second data line. A source electrode of the second active device disposed between the second data line and the third data line is electrically connected to the second data line. An extension region of the semiconductor pattern of the second active device extends toward and overlaps the third data line.