Abstract: Disclosed are a calibration device, a calibration system and a calibration method. The calibration device includes a camera configured to capture image information, a laser sensor configured to capture image information, a laser sensor configured to detect distance information, and a calibration module configured to perform a calibration of the camera and the laser sensor by obtaining a relation between the image information and the distance information, wherein the calibration module includes a plane member disposed to intersect a scanning surface of the laser sensor such that an intersection line is generated, and disposed within a capturing range by the camera so as to be captured by the camera, and a controller configured to perform coordinate conversions with respect to the image information and the distance information based on a ratio between one side of the plane member and the intersection line, and based on a plane member image included in the image information.

Abstract: A cutting insert for an indexable drill according to the present disclosure may be used for external cutting or internal cutting depending on a position and a direction in which the cutting insert is installed even though a single type of cutting insert is provided. In addition, the cutting insert for an indexable drill according to the present disclosure has a section of the internal cutting edge which is involved in a cutting process or a section of the internal cutting edge which is not involved in the cutting process, which are clearly distinguished from each other, and as a result, the cutting insert may be rotated and mounted, and reversed and mounted on a drill body, such that maximum eight corners may be used to perform a cutting process.

Abstract: Disclosed is an alpha alumina (?-Al2O3) thin film comprising the lower layer formed on the base material made from cemented carbide; and the ?-Al2O3 thin film layer formed on the lower layer, wherein when the ?-Al2O3 thin film layer is divided, from the total thickness (T) thereof, into a D1 layer which is from an interface layer to 0.15T, a D2 layer which is from 0.15T to 0.4T, and a D3 layer which is from 0.4T to 1T, an S1 (D3 layer grain size/D1 layer grain size) is 2-5.5 and an S2 (D2 layer grain size/D1 layer grain size) is 1.5-4.

Abstract: A technical object is to provide an insert capable of preventing escaping of the insert from an assembly of the insert and a tool holder. To this purpose, the insert includes an insert body, and a holder fastening portion provided in the insert body to be fastened to the tool holder, in which the holder fastening portion includes one or more fastening holes formed through the insert body from an upper surface to a lower surface, and one or more locking holes formed by being recessed in a lower surface periphery of the insert body.

Abstract: In a medical phantom using a plurality of unit blocks related to an example of the present invention, the plurality of unit blocks includes a first unit block of a hexahedron shape with an empty interior; and a second unit block of a hexahedron shape with an empty interior, having a plurality of ridges formed on a top and a plurality of furrows formed on a bottom to be combined with the plurality of ridges, and the medical phantom is determined according to a combination form of the first unit block and the second unit block.

Abstract: A technical object of the present disclosure is to provide an insert, which can maintain rigidity thereof regardless of a clearance angle of a clearance surface that forms a circular cutting edge. To this end, the insert according to the present disclosure includes a circular upper surface, a circular lower surface, and a clearance surface portion connecting the upper surface and the lower surface. The clearance surface portion is divided into first and second clearance surfaces along a circumference thereof, by a first wave line that forms a waveform of valleys facing the lower surface and mounts facing the upper surface.

Abstract: The present disclosure relates to a cutting insert and an indexable drill. The cutting insert and the indexable drill according to the present disclosure are configured such that when the cutting insert is mounted on the indexable drill, the cutting insert is easily inserted into the indexable drill at the initial time, and strong coupling force is implemented between the indexable drill and the cutting insert at a point of time at which the cutting insert is completely mounted. In addition, the cutting insert, according to the present disclosure, has excellent rigidity, when compared to cutting inserts in the related art that perform identical/similar cutting processing, since a portion, which is weak in rigidity, is provided as a thick portion.

Abstract: A semiconductor memory apparatus may include a write driver, a data sensing section, and a programming control section. The write driver may write an input data into a memory cell in response to a write signal. The data sensing section may generate a comparison flag signal by comparing an output data outputted from the memory cell with a reference voltage in response to a verification read signal. The programming control section may generate the write signal for an initial write operation and the verification read signal as soon as the comparison flag signal is enabled.

Abstract: The present invention relates to a method of preparing a vinyl chloride polymer, and more precisely, a method of preparing a vinyl chloride polymer having excellent processability by raising a final polymerization temperature up to 5˜20° C. from an first polymerization temperature.

Abstract: Provided is a hard film for a cutting tool formed on a surface of a base material, the hard film being comprised of a nano multi-layered structure formed by sequentially stacking a thin layer A, a thin layer B, a thin layer C and a thin layer D or being comprised of a structure formed by repeatedly stacking the nano multi-layered structure at least twice, wherein the thin layer A is comprised of TixAl1-xN (0.5?x?0.7); the thin layer B is comprised of Al1-y-zTiyMezN (0.4?y?0.7, 0<z?0.1 where Me is at least one of Si, Cr, and Nb); the thin layer C is comprised of AlaTi1-aN (0.5?a?0.7); and the thin layer D is comprised of AlbCr1-bN (0.5?b?0.7).

Abstract: A touch controller includes a touch data generator that is connected to a plurality of sensing lines, the touch data generator sensing a change in capacitance of a sensing unit connected to each of the sensing lines and generating touch data by processing the sensing signal corresponding to the result of sensing; and a signal processor that controls a timing of generating the touch data by receiving at least one piece of timing information for driving a display panel from a timing controller, and then providing either the timing information or a signal generated from the timing information as a control signal to the touch data generator.

Abstract: A touch controller includes a touch data generator that is connected to a plurality of sensing lines, the touch data generator sensing a change in capacitance of a sensing unit connected to each of the sensing lines and generating touch data by processing the sensing signal corresponding to the result of sensing; and a signal processor that controls a timing of generating the touch data by receiving at least one piece of timing information for driving a display panel from a timing controller, and then providing either the timing information or a signal generated from the timing information as a control signal to the touch data generator.

Abstract: Provided is a hard film formed on a surface of a base material, the hard film being comprised of a nano multi-layered structure formed by stacking a thin layer A, a thin layer B a thin layer C in order of thin layers A-B-A-C from the base material or being comprised of a structure formed by repeatedly stacking the nano multi-layered structure at least twice, wherein the thin layer A is comprised of Ti1-xAlxN (0.3?x?0.7); the thin layer B is comprised of Al1-yCryN (0.3?y?0.7); and the thin layer C is comprised of MeN (where Me is any one of Nb, V, and Cr).

Abstract: A system on chip includes a plurality of function blocks configured to perform predetermined functions, respectively, a clock control unit configured to generate a plurality of operating clock signals that are provided to the plurality of function blocks, respectively, a clock monitor configured to monitor frequencies of the operating clock signals to generate an interrupt signal, and a processor configured to control the frequencies of the operating clock signals based on the interrupt signal. The clock monitor includes a selector configured to select one of the operating clock signals to provide a selected clock signal, a frequency detector configured to detect a frequency of the selected clock signal to provide a detection frequency, and an interrupt generator configured to generate the interrupt signal based on the detection frequency, where the interrupt signal indicates a frequency abnormality of the operating clock signal corresponding to the selected clock signal.

Abstract: Disclosed is a hard coating film formed on a hard base material such as cemented carbide. The hard coating film has a nanoscale multilayered structure to have improved oxidation resistance and wear resistance. The hard coating film is a hard coating film formed on the base material. The first layer is composed of a TiAl nitride having a composition of Ti1-aAla (0.3?a?0.7), and the second layer has a nanoscale multilayered structure or a structure in which the nanoscale multilayered structure is repeatedly laminated at least two times, the nanoscale multilayered structure including a thin layer A composed of an AlTiSi nitride, a thin layer B, a thin layer C composed of a AlCr nitride, and a thin layer D having thicknesses of 3 nm to 20 nm. The thin film B and the thin film D are composed of a TiAl nitride.

Abstract: A digital to analog converter may include a reference voltage generation unit that generates a reference voltage and a plurality of unit conversion units connected through an output node. The plurality of unit conversion units may set a voltage level of the output node in response to digital codes and the reference voltage.

Abstract: A clock control device and method are provided. The clock control device includes a stable time controller which receives an operational condition and generates an expiration counting value based on the operational condition; a stable time counter which receives the expiration counting value and activates a clock gating enable signal after a count value of the stable time counter is equal to the expiration counting value; a clock gating cell which transmits a clock signal after receiving the clock gating enable signal; and an oscillator which generates an oscillator clock signal and transmits the oscillator clock signal to the clock gating cell and the stable time counter.

Abstract: Disclosed are a vinyl chloride based nanocomposite composition and a method of preparing the vinyl chloride based nanocomposite. According to the present invention, a method of preparing a straight vinyl chloride based nanocomposite having a nanomaterial uniformly dispersed therein, by using the vinyl chloride based nanocomposite composition when a vinyl chloride monomer is suspension polymerized in the presence of a protective colloidal agent and a polymerization initiator after preparing a water dispersion suspension using the vinyl chloride based nanocomposite composition based on a hydrophilic composition is provided.

Abstract: A semiconductor memory apparatus may include a write driver, a data sensing section, and a programming control section. The write driver may write an input data into a memory cell in response to a write signal. The data sensing section may generate a comparison flag signal by comparing an output data outputted from the memory cell with a reference voltage in response to a verification read signal. The programming control section may generate the write signal for an initial write operation and the verification read signal in response to a write command, and generate the write signal for a following write operation as soon as the comparison flag signal is at a predetermined level.

Abstract: A semiconductor memory apparatus may include a read/write circuit unit configured to receive an external voltage, to read data from a memory cell array, and to generate a pre-read signal, while an internal voltage is generated during a test mode, and a controller configured to selectively drive a write circuit unit in response to the pre-read signal.