Abstract: The present invention relates to a case having a thermal barrier layer for a single cell. The composite case comprises a substrate and a double-layer structure coating on the substrate, wherein the double-layer structure coating includes an inner layer containing an aerogel material which has a ultra-low thermal conductivity, and an outer layer containing a barrier material which may prevent an electrolyte solvent from permeating into the inner layer. According to the present invention, the composite case can preserve cases in a prismatic or pouch cell from melting when cell goes to thermal runaway.

Abstract: The present invention provides a flexible battery, including an electrochemical cell layer and a wrapping layer that wraps the electrochemical cell layer. The flexible battery further includes an energy absorbing layer. The energy absorbing layer is located between the wrapping layer and upper and lower surfaces, which are opposite to each other, of the electrochemical cell layer. The energy absorbing layer includes a plurality of supporting parts that protrude outward from the upper or lower surface of the electrochemical cell layer. The plurality of supporting parts are mainly made of a foam material or rubber. For the energy absorbing layer, a lower-modulus buffering layer or an empty part may be further disposed between the electrochemical cell layer and the wrapping layer, to complement a wavy surface of the supporting part to form a flat surface.

Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Abstract: Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.

Abstract: The present application relates to the field of electronic product heat dissipation component and in particular, relates to a graphene thermally conductive gasket edge-wrapped process and an edge-wrapped graphene thermally conductive gasket. The process steps are: coating a layer of adhesive on the first layer of graphene film, placing the second layer of graphene film on the first layer of graphene film, repeating stacking to the target height, obtaining a graphene film block, punching a plurality of through holes penetrating two surfaces of the graphene film block; threading the carbon fiber through the through holes after coating an adhesive on the surface thereof; slicing along the direction parallel to the thickness direction of the graphene film, to obtain the graphene thermally conductive gasket with a specified thickness; and coating a layer of glue on the peripheral sides of the graphene thermally conductive gasket to form an edge-wrapped layer.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

Abstract: One example of a flexible battery includes an electrochemical cell layer and a wrapping layer that wraps the electrochemical cell layer. The flexible battery further includes an energy absorbing layer. The energy absorbing layer is located between the wrapping layer and upper and lower surfaces, which are opposite to each other, of the electrochemical cell layer. The energy absorbing layer includes a plurality of supporting parts that protrude outward from the upper or lower surface of the electrochemical cell layer. The plurality of supporting parts are mainly made of a foam material or rubber. For the energy absorbing layer, a lower-modulus buffering layer or an empty part may be further disposed between the electrochemical cell layer and the wrapping layer, to complement a wavy surface of the supporting part to form a flat surface, so as to meet diversified requirements of a wearable device.

Abstract: A battery module includes a jumper electrode connector a neighbor electrode connector, and batteries. The jumper electrode connector is configured for the electrical connection between the batteries arranged at intervals, and the neighbor is configured for the electrical connection between the adjacent batteries, thereby realizing the connection relationship of the batteries in the battery module. The jumper electrode connector is formed with a notch in a first direction and toward an outside of the battery module, and the neighbor electrode connector is arranged in the notch.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

Abstract: A reinforcement device for correcting alignment of a wok ear rammed earth wall includes: a wok ear reinforcing structure including a strip-shaped fixing plate, of which side fixing plates are spaced apart on each of both sides, and an end of each of the side fixing plates is provided with a first connecting ring; a rammed earth wall reinforcing structure including triangular fixing frames, side leg support columns, and a main support column. The triangular fixing frames on both sides of the wok ear respectively extend to form L-shaped connecting bars symmetric to each other, the ends are correspondingly welded together to form a surrounding integral structure. A second connecting rings and the first connecting rings are welded by rigid connecting plates. The original appearance of the wok ear rammed earth wall can be ensured with less destruction, improvements of structural strength, stability, and anti-falling ability.

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Abstract: A thin-film white LED chip includes a transparent substrate, a first transparent electrode, an emissive structure, a second transparent electrode, and a first phosphorescent/fluorescent layer respectively arranged in sequence. The emissive structure includes an emissive layer, an electron injection layer and a hole injection layer respectively formed at both sides of the emissive layer, and a total thickness of the electron injection layer and the second transparent electrode (in an inverted structure) or a total thickness of the hole injection layer and the second transparent electrode (in a conventional structure) is smaller than a length of one emission wavelength of the emissive layer. The evanescent wave generated by total internal reflection can penetrate into and be absorbed by the first phosphorescent/fluorescent layer to further emit light, thereby the overall external quantum efficiency of the LED chip is improved.

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Abstract: A method of forming an interconnect structure for semiconductor devices is described. The method comprises depositing an etch stop layer on a substrate by physical vapor deposition followed by in situ deposition of a metal layer on the etch stop layer. The in situ deposition comprises flowing a plasma processing gas into the chamber and exciting the plasma processing gas into a plasma to deposit the metal layer on the etch stop layer on the substrate. The substrate is continuously under vacuum and is not exposed to ambient air during the deposition processes.

Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.