Abstract: A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.

Abstract: Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.

Abstract: Disclosed herein are rapid cycle pressure swing adsorption (PSA) process for separating O2 from N2 and/or Ar. The processes use a carbon molecular sieve (CMS) adsorbent having an O2/N2 and/or O2/Ar kinetic selectivity of at least 5 and an O2 adsorption rate (1/s) of at least 0.2000 as determined by linear driving force model at 1 atma and 86° F.

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.

Abstract: A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.

Abstract: Methods for forming a film stack comprising a hardmask layer and etching such hardmask layer to form features in the film stack are provided. The methods described herein facilitate profile and dimension control of features through a proper profile management scheme formed in the film stack. In one or more embodiments, a method for etching a hardmask layer includes forming a hardmask layer on a substrate, where the hardmask layer contains a metal-containing material containing a metal element having an atomic number greater than 28, supplying an etching gas mixture to the substrate, and etching the hardmask layer exposed by a photoresist layer.

Abstract: A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.

Abstract: A battery protection apparatus power protection apparatus is configured to protect an electrochemical cell connected to a load, and includes a protection IC, a switching transistor group, and a sampling resistor. The protection IC includes two power input terminals respectively connected to positive and negative electrodes of the electrochemical cell, and an operational amplifier, where the operational amplifier includes a positive input pin, a negative input pin, and an output pin. The switching transistor group is connected between the negative electrode of the electrochemical cell and the load, and is configured to control turn-on and turn-off of a charge and discharge circuit of the electrochemical cell. The sampling detection resistor Rs is serially connected between the sampling circuit detection terminal and the output pin, where the main circuit detection terminal is connected to the positive input pin, and the sampling circuit detection terminal is connected to the negative input pin.

Abstract: A power protection apparatus includes a protection integrated circuit (IC), a switch transistor group, and a sampling resistor. The protection IC is respectively connected to a positive electrode and a negative electrode of the cell and includes a mirror current input port, a mirror current output port, an operational amplifier, a voltage regulation switch transistor, and a charge-discharge protection circuit. The operational amplifier includes a positive input pin, a negative input pin, and an output pin. The switch transistor group is connected between the positive electrode of the cell and the load and is configured to turn on or turn off a charge-discharge loop of the cell, and the at least one control circuit is connected to the at least one charge-discharge protection circuit of the protection IC and is configured to receive a control signal of the protection IC to control the switch transistor group to be turned off to implement abnormity protection of the cell.

Abstract: In some embodiments, a method of forming an interconnect structure includes selectively depositing a barrier layer atop a substrate having one or more exposed metal surfaces and one or more exposed dielectric surfaces, wherein a thickness of the barrier layer atop the one or more exposed metal surfaces is greater than the thickness of the barrier layer atop the one or more exposed dielectric surfaces. In some embodiments, a method of forming an interconnect structure includes depositing an etch stop layer comprising aluminum atop a substrate via a physical vapor deposition process; and depositing a barrier layer atop the etch stop layer via a chemical vapor deposition process, wherein the substrate is transferred from a physical vapor deposition chamber after depositing the etch stop layer to a chemical vapor deposition chamber without exposing the substrate to atmosphere.

Abstract: Methods and apparatus for reducing arcing of a silicon oxide layer in a film stack are provided. In some embodiments a method for reducing arcing of a silicon oxide layer in a film stack includes: depositing a silicon oxide layer having a top surface atop a low-k dielectric layer, wherein the silicon oxide layer and low-k dielectric layer are disposed upon a substrate and within a film stack; contacting the silicon oxide layer with argon plasma in an amount sufficient to clean the silicon oxide layer; and depositing a nitride layer atop the silicon oxide layer.

Abstract: An eyeball tracking system is provided, which includes: an illumination light source, configured to transmit an illumination light ray to a beam scanner; the beam scanner, configured to project the illumination light ray onto an entrance pupil optical apparatus; the entrance pupil optical apparatus, configured to reflect, reproduce, or refract the illumination light ray, so that the reflected, reproduced, or refracted illumination light ray illuminates an eyeball; a photoelectric detector, configured to: collect a receive optical power value of an eyeball reflection light ray, and send the receive optical power value to a controller; and the controller, configured to: receive the receive optical power value sent by the photoelectric detector, determine, based on the receive optical power value, an optical power reference value, and determine a current gaze direction of the eyeball based on the optical power reference value.

Abstract: Methods are disclosed for depositing a thin film of compound material on a substrate. In some embodiments, a method of depositing a layer of compound material on a substrate include: flowing a reactive gas into a plasma processing chamber having a substrate to be sputter deposited disposed therein in opposition to a sputter target comprising a metal; exciting the reactive gas into a reactive gas plasma to react with the sputter target and to form a first layer of compound material thereon; flowing an inert gas into the plasma processing chamber; and exciting the inert gas into a plasma to sputter a second layer of the compound material onto the substrate directly from the first layer of compound material. The cycles of target poisoning and sputtering may be repeated until a compound material layer of appropriate thickness has been formed on the substrate.

Abstract: The present invention provides a flexible battery, including an electrochemical cell layer and a wrapping layer that wraps the electrochemical cell layer. The flexible battery further includes an energy absorbing layer. The energy absorbing layer is located between the wrapping layer and upper and lower surfaces, which are opposite to each other, of the electrochemical cell layer. The energy absorbing layer includes a plurality of supporting parts that protrude outward from the upper or lower surface of the electrochemical cell layer. The plurality of supporting parts are mainly made of a foam material or rubber. For the energy absorbing layer, a lower-modulus buffering layer or an empty part may be further disposed between the electrochemical cell layer and the wrapping layer, to complement a wavy surface of the supporting part to form a flat surface, so as to meet diversified requirements of a wearable device.

Abstract: Provided are a polymer containing S,S-dioxide-dibenzothiophene in backbone chain with content-adjustable triarylamine end groups, and a preparation method and an application thereof. Triarylamines hole-transport small molecules are introduced into the polymer end group, and a content of the triarylamine end groups can be adjusted by controlling a polymer molecular weight, so that the polymer has better electron-transport and hole-transport capabilities, and charge carrier transport can be balanced, so that more exciton recombination takes place effectively, thus improving the luminous efficiency and stability of the polymer. The polymer is prepared by a Suzuki polymerization reaction and does not require synthesis of new monomers. The polymer material is used for preparing highly effective and stable monolayer devices, and is dissolved directly in an organic solvent, then spin-coated, ink-jet printed, or printed to form a film.

Abstract: Methods and apparatus for simulating arcing that can occur during substrate fabrication is provided. In some embodiments, the method includes: loading a bare silicon substrate that has been pretreated with at least one of polybutylene terephthalate (PBT) or a film into a testing environment, performing a physical vapor deposition (PVD) process on the bare silicon substrate, and determining arcing occurrences on the bare silicon substrate caused during the PVD process.

Abstract: Disclosed herein are rapid cycle pressure swing adsorption (PSA) process for separating O2 from N2 and/or Ar. The processes use a carbon molecular sieve (CMS) adsorbent having an O2/N2 and/or O2/Ar kinetic selectivity of at least 5 and an O2 adsorption rate (1/s) of at least 0.2000 as determined by linear driving force model at 1 atma and 86° F.

Abstract: Embodiments of a process chamber are provided herein. In some embodiments, a process chamber includes a chamber body having an interior volume, a substrate support disposed in the interior volume, a target disposed within the interior volume and opposing the substrate support, a process shield disposed in the interior volume and having an upper portion surrounding the target and a lower portion surrounding the substrate support, the upper portion having an inner diameter that is greater than an outer diameter of the target to define a gap between the process shield and the target, and a gas inlet to provide a gas to the interior volume through the gap or across a front opening of the gap to substantially prevent particles from the interior volume from entering the gap during use.

Abstract: The present disclosure provides an interconnect formed on a substrate and methods for forming the interconnect on the substrate. In one embodiment, the method for forming an interconnect on a substrate includes depositing a barrier layer on the substrate, depositing a transition layer on the barrier layer, and depositing an etch-stop layer on the transition layer, wherein the transition layer shares a common element with the barrier layer, and wherein the transition layer shares a common element with the etch-stop layer.