Patents by Inventor Yong Cao

Yong Cao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11313034
    Abstract: In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: April 26, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Weimin Zeng, Yong Cao, Daniel Lee Diehl, Huixiong Dai, Khoi Phan, Christopher Ngai, Rongjun Wang, Xianmin Tang
  • Patent number: 11257677
    Abstract: A method of forming an interconnect structure for semiconductor devices is described. The method comprises depositing an etch stop layer on a substrate by physical vapor deposition followed by in situ deposition of a metal layer on the etch stop layer. The in situ deposition comprises flowing a plasma processing gas into the chamber and exciting the plasma processing gas into a plasma to deposit the metal layer on the etch stop layer on the substrate. The substrate is continuously under vacuum and is not exposed to ambient air during the deposition processes.
    Type: Grant
    Filed: January 24, 2020
    Date of Patent: February 22, 2022
    Assignee: Applied Materials, Inc.
    Inventors: He Ren, Hao Jiang, Mehul Naik, Wenting Hou, Jianxin Lei, Chen Gong, Yong Cao
  • Publication number: 20220052248
    Abstract: A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Application
    Filed: February 17, 2021
    Publication date: February 17, 2022
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • Publication number: 20220013707
    Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.
    Type: Application
    Filed: February 17, 2021
    Publication date: January 13, 2022
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • Publication number: 20220013708
    Abstract: A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.
    Type: Application
    Filed: February 17, 2021
    Publication date: January 13, 2022
    Inventors: Zihao Yang, Mingwei Zhu, Shriram Mangipudi, Mohammad Kamruzzaman Chowdhury, Shane Lavan, Zhebo Chen, Yong Cao, Nag B. Patibandla
  • Publication number: 20210399377
    Abstract: A battery module includes a jumper electrode connector a neighbor electrode connector, and batteries. The jumper electrode connector is configured for the electrical connection between the batteries arranged at intervals, and the neighbor is configured for the electrical connection between the adjacent batteries, thereby realizing the connection relationship of the batteries in the battery module. The jumper electrode connector is formed with a notch in a first direction and toward an outside of the battery module, and the neighbor electrode connector is arranged in the notch.
    Type: Application
    Filed: January 4, 2021
    Publication date: December 23, 2021
    Applicants: CHINA LITHIUM BATTERY TECHNOLOGY CO., LIMITED, CALB Technology Co., Ltd.
    Inventors: Xiaoyuan Du, Keqiang Cheng, Yong Cao, Qixin Guo
  • Publication number: 20210399388
    Abstract: The disclosure discloses a battery module. The electrical connection between a first electrode of a first battery and a second electrode of a second battery can be realized by setting a jumper electrode connector, thereby facilitating realization of connection relationship of multiple batteries. Moreover, an insulating structure is provided between the jumper electrode connector and the battery. Also, the jumper electrode connector includes a first through hole, the orthographic projection of the first through hole and the orthographic projection of the explosion-proof valve at least partially overlap each other, and the orthographic projection of the first through hole overlaps the orthographic projection of the insulating structure.
    Type: Application
    Filed: December 30, 2020
    Publication date: December 23, 2021
    Applicants: CALB Technology Co., Ltd., CHINA LITHIUM BATTERY TECHNOLOGY CO., LIMITED
    Inventors: Keqiang Cheng, Xiaoyuan Du, Yong Cao
  • Patent number: 11186676
    Abstract: Provided are a polymer containing S,S-dioxide-dibenzothiophene in backbone chain with content-adjustable triarylamine end groups, and a preparation method and an application thereof. Triarylamines hole-transport small molecules are introduced into the polymer end group, and a content of the triarylamine end groups can be adjusted by controlling a polymer molecular weight, so that the polymer has better electron-transport and hole-transport capabilities, and charge carrier transport can be balanced, so that more exciton recombination takes place effectively, thus improving the luminous efficiency and stability of the polymer. The polymer is prepared by a Suzuki polymerization reaction and does not require synthesis of new monomers. The polymer material is used for preparing highly effective and stable monolayer devices, and is dissolved directly in an organic solvent, then spin-coated, ink-jet printed, or printed to form a film.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: November 30, 2021
    Assignee: SOUTH CHINA UNIVERSITY OF TECHNOLOGY
    Inventors: Ting Guo, Feng Peng, Lei Ying, Wei Yang, Junbiao Peng, Yong Cao
  • Publication number: 20210328449
    Abstract: In a method of charging a battery, a charging control device obtains a battery parameter that includes an electrode parameter of the battery and one or more of a structure parameter, a manufacturing process parameter, an electrical parameter, an electrolyte parameter, a diaphragm parameter, and a thermophysical parameter of the battery. The charging control device inputs the battery parameter input into a battery model represented by an ordinary differential equation to obtain a safe charging boundary value of the battery in n cycles, where n is greater than or equal to 2 and less than or equal to N, N is a cycle life of the battery, and the n cycles refer to n cycles selected from 0 to N cycles. The safe charging boundary value is a maximum charging current in which no lithium plating occurs on the battery in different states of charge SOCs and at different temperatures.
    Type: Application
    Filed: June 24, 2021
    Publication date: October 21, 2021
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Liangyu Li, Juan Li, Pinghua Wang, Yong Cao, Yangxing Li
  • Publication number: 20210311303
    Abstract: An eyeball tracking system is provided, which includes: an illumination light source, configured to transmit an illumination light ray to a beam scanner; the beam scanner, configured to project the illumination light ray onto an entrance pupil optical apparatus; the entrance pupil optical apparatus, configured to reflect, reproduce, or refract the illumination light ray, so that the reflected, reproduced, or refracted illumination light ray illuminates an eyeball; a photoelectric detector, configured to: collect a receive optical power value of an eyeball reflection light ray, and send the receive optical power value to a controller; and the controller, configured to: receive the receive optical power value sent by the photoelectric detector, determine, based on the receive optical power value, an optical power reference value, and determine a current gaze direction of the eyeball based on the optical power reference value.
    Type: Application
    Filed: June 17, 2021
    Publication date: October 7, 2021
    Inventors: Zhenlin XIE, Yong CAO, Patricia LEICHLITER
  • Publication number: 20210288224
    Abstract: A thin-film white LED chip includes a transparent substrate, a first transparent electrode, an emissive structure, a second transparent electrode, and a first phosphorescent/fluorescent layer respectively arranged in sequence. The emissive structure includes an emissive layer, an electron injection layer and a hole injection layer respectively formed at both sides of the emissive layer, and a total thickness of the electron injection layer and the second transparent electrode (in an inverted structure) or a total thickness of the hole injection layer and the second transparent electrode (in a conventional structure) is smaller than a length of one emission wavelength of the emissive layer. The evanescent wave generated by total internal reflection can penetrate into and be absorbed by the first phosphorescent/fluorescent layer to further emit light, thereby the overall external quantum efficiency of the LED chip is improved.
    Type: Application
    Filed: May 26, 2021
    Publication date: September 16, 2021
    Inventors: Ziming Chen, Xuanli Ye, Zhenchao Li, Yong Cao
  • Patent number: 11105879
    Abstract: A time-domain segmented calibration method for a characteristic impedance of a time-domain reflectometer is provided. The method first segments the measured characteristic impedance value according to the reflection coefficients ?, determines several boundary points with the reflection coefficients, and divides the range of the measured impedance according to the impedance values corresponding to the reflection coefficients of the boundary points, and then select a typical impedance value in the range as a reference impedance for calibration. The TDR instrument performs characteristic impedance calibration for each typical reference impedance value one by one, and stores them as calibration parameters of different groups. With respect to different impedance value ranges, the selection ranges of the calibration and measurement areas of TDR are different. When the measurement is performed, the 50? calibration parameter is used as the default reference for calculation.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: August 31, 2021
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Yong Cao, Hong Wen, Yang Tu
  • Publication number: 20210233770
    Abstract: A method of forming an interconnect structure for semiconductor devices is described. The method comprises depositing an etch stop layer on a substrate by physical vapor deposition followed by in situ deposition of a metal layer on the etch stop layer. The in situ deposition comprises flowing a plasma processing gas into the chamber and exciting the plasma processing gas into a plasma to deposit the metal layer on the etch stop layer on the substrate. The substrate is continuously under vacuum and is not exposed to ambient air during the deposition processes.
    Type: Application
    Filed: January 24, 2020
    Publication date: July 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: He Ren, Hao Jiang, Mehul Naik, Wenting Hou, Jianxin Lei, Chen Gong, Yong Cao
  • Patent number: 11067795
    Abstract: An eyeball tracking system is provided, which includes: an illumination light source, configured to transmit an illumination light ray to a beam scanner; the beam scanner, configured to project the illumination light ray onto an entrance pupil optical apparatus; the entrance pupil optical apparatus, configured to reflect, reproduce, or refract the illumination light ray, so that the reflected, reproduced, or refracted illumination light ray illuminates an eyeball; a photoelectric detector, configured to: collect a receive optical power value of an eyeball reflection light ray, and send the receive optical power value to a controller; and the controller, configured to: receive the receive optical power value sent by the photoelectric detector, determine, based on the receive optical power value, an optical power reference value, and determine a current gaze direction of the eyeball based on the optical power reference value.
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: July 20, 2021
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Zhenlin Xie, Yong Cao, Patricia Leichliter
  • Patent number: 11056325
    Abstract: A movable substrate support with a top surface for holding a substrate, when present, is used in conjunction with a cover ring that is stationary to adjust for a shadow effect to control substrate edge uniformity during deposition processes. The cover ring is held stationary by an electrically isolated spacer that engages with a grounded shield in the process volume of a semiconductor process chamber. A controller adjusts the substrate support in response to deposition material on a top surface of the cover ring to maintain the shadow effect and substrate edge uniformity.
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: July 6, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Thanh X. Nguyen, Alexander Jansen, Yana Cheng, Randal Schmieding, Yong Cao, Xianmin Tang, William Johanson
  • Publication number: 20210123156
    Abstract: Embodiments described herein include a method for depositing a material layer on a substrate while controlling a bow of the substrate and a surface roughness of the material layer. A bias applied to the substrate while the material layer is deposited is adjusted to control the bow of the substrate. A bombardment process is performed on the material layer to improve the surface roughness of the material layer. The bias and bombardment process improve a uniformity of the material layer and reduce an occurrence of the material layer cracking due to the bow of the substrate.
    Type: Application
    Filed: September 10, 2020
    Publication date: April 29, 2021
    Inventors: Zihao YANG, Mingwei ZHU, Nag B. PATIBANDLA, Yong CAO, Shumao ZHANG, Zhebo CHEN, Jean LU, Daniel Lee DIEHL, Xianmin TANG
  • Patent number: 10991579
    Abstract: The present disclosure generally relates to tin oxide films prepared by physical vapor deposition using a doped tin target. The semiconductor film may include tin and oxygen, and may be formed in a PVD chamber including a silicon doped tin target. Additionally, the semiconductor film may be smooth compared to similarly formed films without a doped target. The semiconductor film may be deposited by applying an electrical bias to a sputtering silicon doped tin target including the silicon in an amount of 0.5 to 5% by atomic weight of the total target. The semiconductor film has a smooth surface morphology compared to similarly formed tin oxide films formed without a doped target.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: April 27, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Weimin Zeng, Yong Cao
  • Publication number: 20210111361
    Abstract: Disclosed are a semi-transparent solar cell device and an application. The cell device comprises a cathode, a hole transport layer, a photoactivity layer, an electron transport layer and an anode, wherein the photoactivity layer absorbs near-infrared and infrared light with a wavelength range greater than 780 nm. The cell device fully utilizes light energy in different bands, thus increasing the light energy utilization rate. By combining a semi-transparent solar cell and a heat-insulating film, not only can the cell device be used for generating power as a photovoltaic cell, but the device can also be attached to glass of a car or of an exterior wall of a building to be used as the heat-insulating film because of having excellent heat insulation performance itself. The cell device solves the problems of high visible light transmittance, high photoelectric conversion efficiency, heat insulation, ultraviolet protection, etc.
    Type: Application
    Filed: November 28, 2017
    Publication date: April 15, 2021
    Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY
    Inventors: Hin Lap YIP, Chen SUN, Ruoxi XIA, Fei HUANG, Yong CAO
  • Publication number: 20210091599
    Abstract: A wireless charging apparatus includes a receive end coil, a switch selection circuit, a plurality of charging circuits, and a receive end controller. An input end of the switch selection circuit is connected to an output end of the receive end coil, and an output end of the switch selection circuit is connected to an input end of each of the charging circuits.
    Type: Application
    Filed: December 7, 2020
    Publication date: March 25, 2021
    Inventors: Qitang Liu, Ce Liu, Weiliang Shu, Yanding Liu, Pinghua Wang, Yong Cao
  • Patent number: D933176
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: October 12, 2021
    Assignee: Shanghai VacDrain Vacuum Drainage Equipment Co., Ltd.
    Inventor: Yong Cao