Abstract: A connecting mechanism which is adjustable in respect of length and which retains its proper fastening function in various orientations connects a first body with a second body and includes a connecting piece, a bolt, and a nut. The connecting piece includes a circular bowl-shaped receiving groove which is open at a lower opening. The connecting flange is fastened to the first body via a threaded screw. The bolt has a spheroidal connecting head and a threaded connecting pole extending from the connecting head and protruding from the lower opening of the receiving groove to connect to and fasten the second body.

Abstract: According to embodiments provide a method for forming dielectric films using physical vapor deposition chamber. Particularly, a pasting process may be performed to apply a conductive coating over inner surfaces of the physical vapor deposition chamber. The pasting process may be performed under adjusted process parameters, such as increased spacing and/or increased chamber pressure. The adjusted parameters allow the conductive coating to be formed more efficiently and effectively.

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

Abstract: Devices are provided comprising conductive or semiconductive layers comprising compositions comprising aqueous dispersions of polythiophenes having homopolymers or co-polymers of Formula I(a) or Formula I(b) and at least one colloid-forming polymeric acid. Methods of making such compositions and using them in organic electronic devices are further provided.

Abstract: Compositions are provided comprising a continuous liquid aqueous medium having dispersed therein a polydioxythiophene and at least one colloid-forming fluorinated polymeric acid. Films from invention compositions are useful as buffer layers in organic electronic devices, including electroluminescent devices, such as, for example, organic light emitting diodes (OLED) displays.

Abstract: The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer.

Abstract: A “Name Disambiguator” provides various techniques for implementing an interactive framework for resolving or disambiguating entity names (associated with objects such as publications) for entity searches where two or more same or similar names may refer to different entities. More specifically, the Name Disambiguator uses a combination of user input and automatic models to address the disambiguation problem. In various embodiments, the Name Disambiguator uses a two part process, including: 1) a global SVM trained from large sets of documents or objects in a simulated interactive mode, and 2) further personalization of local SVM models (associated with individual names or groups of names such as, for example, a group of coauthors) derived from the global SVM model. The result of this process is that large sets of documents or objects are rapidly and accurately condensed or clustered into ordered sets by that are organized by entity names.

Abstract: A liquid crystal lens cell set includes a plurality of liquid crystal lenses overlapping to each other. Each of the liquid crystal lenses is supported between a pair of flat layers. One of the layers supports a planar electrode made of ITO. The other electrode, also formed of ITO, is supported in the center of the opposing substrate and projects toward the center of the liquid crystal layer. A power supply creates a potential difference between the electrodes and imposes a non-uniform electric field on the liquid crystal modules which aligns them in which a way as to act as a lens. By varying voltage between the electrodes the focal length of the lens may be controlled. A central electrode may be in the form of a beam or of a pointed tip. An electrode having a central hole may be associated with the central electrode or the planar electrode.

Abstract: A compressor may include a shell and a housing fixed within the shell. A compression mechanism may be supported by the housing and may include an orbiting scroll member and a non-orbiting scroll member that are meshingly engaged to form a series of compression pockets. A retaining assembly may include an axial retention member and a rotational retention member, each of which is engaged with the non-orbiting scroll member to limit axial translation and rotation of the non-orbiting scroll member relative to the housing.

Abstract: A “Name Disambiguator” provides various techniques for implementing an interactive framework for resolving or disambiguating entity names (associated with objects such as publications) for entity searches where two or more same or similar names may refer to different entities. More specifically, the Name Disambiguator uses a combination of user input and automatic models to address the disambiguation problem. In various embodiments, the Name Disambiguator uses a two part process, including: 1) a global SVM trained from large sets of documents or objects in a simulated interactive mode, and 2) further personalization of local SVM models (associated with individual names or groups of names such as, for example, a group of coauthors) derived from the global SVM model. The result of this process is that large sets of documents or objects are rapidly and accurately condensed or clustered into ordered sets by that are organized by entity names.

Abstract: A liquid crystal lens cell set includes a plurality of liquid crystal lenses overlapping to each other. Each of the liquid crystal lenses is supported between a pair of flat layers. One of the layers supports a planar electrode made of ITO. The other electrode, also formed of ITO, is supported in the center of the opposing substrate and projects toward the center of the liquid crystal layer. A power supply creates a potential difference between the electrodes and imposes a non-uniform electric field on the liquid crystal modules which aligns them in which a way as to act as a lens. By varying voltage between the electrodes the focal length of the lens may be controlled. A central electrode may be in the form of a beam or of a pointed tip. An electrode having a central hole may be associated with the central electrode or the planar electrode.

Abstract: Magnetrons for use in physical vapor deposition (PVD) chambers and methods of use thereof are provided herein. In some embodiments, an apparatus may include a support member having an axis of rotation; a plurality of first magnets coupled to the support member on a first side of the axis of rotation and having a first polarity oriented in a first direction perpendicular to the support member; and a second magnet coupled to the support member on a second side of the axis of rotation opposite the first side and having a second polarity oriented in a second direction opposite the first direction. In some embodiments, the apparatus is capable of forming a magnetic field including one or more magnetic nulls that modulate local plasma uniformity in a physical vapor deposition (PVD) chamber.

Abstract: Methods and apparatus for depositing thin films having high thickness uniformity and low resistivity are provided herein. In some embodiments, a magnetron assembly includes a shunt plate, the shunt plate rotatable about an axis, an inner closed loop magnetic pole coupled to the shunt plate, and an outer closed loop magnetic pole coupled the shunt plate, wherein an unbalance ratio of a magnetic field strength of the outer closed loop magnetic pole to a magnetic field strength of the inner closed loop magnetic pole is less than about 1. In some embodiments, the ratio is about 0.57. In some embodiments, the shunt plate and the outer close loop magnetic pole have a cardioid shape. A method utilizing RF and DC power in combination with the inventive magnetron assembly is also disclosed.

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer.

Abstract: The present application discloses a system for trapping flying insects, a first chemical lure such as lactic acid, a salt of lactic acid, or combinations thereof, and a second chemical lure comprising a source of ammonia. The lures may be employed in particular geometric shapes contained in specifically designed housing to ensure an effective release rate over extended periods of time.

Abstract: The automated social networking graph mining and visualization technique described herein mines social connections and allows creation of a social networking graph from general (not necessarily social-application specific) Web pages. The technique uses the distances between a person's/entity's name and related people's/entities names on one or more Web pages to determine connections between people/entities and the strengths of the connections. In one embodiment, the technique lays out these connections, and then clusters them, in a 2-D layout of a social networking graph that represents the Web connection strengths among the related people's or entities' names, by using a force-directed model.

Abstract: A compressor may include a shell, first and second scroll members, a partition and a first annular seal. The partition may be fixed to the shell and may overly the first scroll member. The partition may include first and second sides having a second discharge opening passing therethrough and being in communication with the first discharge opening. The first side may include a protrusion extending toward the first scroll member and generally surrounding the second discharge opening. The first annular seal may sealingly engage the partition and may be displaceable radially inward to a position abutting the protrusion to limit a radially inward travel of the first annular seal.

Abstract: Described is a technology for understanding entities of a webpage, e.g., to label the entities on the webpage. An iterative and bidirectional framework processes a webpage, including a text understanding component (e.g., extended Semi-CRF model) that provides text segmentation features to a structure understanding component (e.g., extended HCRF model). The structure understanding component uses the text segmentation features and visual layout features of the webpage to identify a structure (e.g., labeled block). The text understanding component in turn uses the labeled block to further understand the text. The process continues iteratively until a similarity criterion is met, at which time the entities may be labeled. Also described is the use of multiple mentions of a set of text in the webpage to help in labeling an entity.

Abstract: An organic electronic device to emit or receive radiation includes a cathode, a first layer including a salt, a second layer including an active organic material, and an anode. A method to manufacture an organic electronic device to emit or receive radiation includes depositing a cathode, depositing a first layer including a salt adjacent the cathode, depositing a second layer including an active organic material adjacent the first layer, and depositing an anode adjacent the second layer. An organic electronic device for emitting or receiving radiation includes a cathode, a first layer including a salt, a second layer including an active organic material, and an anode, the anode being adapted to transmit a significant portion of the radiation to or from the second layer.