Abstract: Firmware updates at an information handling system flash memory device, such as provisioning information stored on a USB device, are securely performed by using a buffer memory and a secured code. An application running on a CPU generates a firmware update and a security code, such as a ciphered hash code based on the firmware update, stores the firmware update and security code in a buffer, and informs a management processor of the update. The management processor analyzes the firmware update to authorize copying of the update from the buffer to the flash memory device. For instance, the management processor creates the security code from the firmware update and compares the created code with the security code stored in the buffer to validate the firmware update.

Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.

Abstract: Methods for forming a metal dielectric etching stop layer onto a substrate with good etching selectivity and low wet etching rate. In one embodiment, a method of sputter depositing a metal dielectric etching stop layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least N2 gas into the processing chamber, applying a RF power to form a plasma from the gas mixture to sputter source material from a target disposed in the processing chamber, maintaining a substrate temperature less than about 320 degrees Celsius, and depositing a metal dielectric etching stop layer onto the substrate from the sputtered source material.

Abstract: Captured data can be transformed and augmented for a particular presentation in a document, such as a note of a notebook application, based on an identified entity for the captured data. The particular presentation of captured data can be provided based on entity detection, extraction, and knowledge base resolution and retrieval. Methods, systems, and services are provided that identify a primary entity of an item input to a notebook application and create an entity object for the primary entity of the item at least from one or more structured representations for content associated with the item. A template for presenting the entity object can be determined according to the primary entity, where the template is selected from a set of templates corresponding to different primary entities such that an arrangement and presentation for one primary entity is different than that of another primary entity.

Abstract: Disclosed are an amine-oxide-group-containing conjugated polymer photoelectric material and application thereof. The amine-oxide-group-containing conjugated polymer photoelectric material consists of conjugated main chains and a side chain containing an amine oxide unit, and is applied in an organic photoelectric device. The material has desirable alcohol/water solubility and photoelectric properties, is suitable for making a multi-layer solution for machining a device, and meanwhile can prevent an adverse effect incurred by freely moving counter ions in a common polyelectrolyte to the device. The material may be used as a cathode interface modification layer applied in organic photoelectric devices such as light-emitting and photovoltaic devices, so as to improve performance of the devices.

Abstract: A liquid crystal lens includes a liquid crystal layer and at least two driving electrode plates. The liquid crystal layer is arranged between the driving electrode plates. Each of the driving electrode plates includes a transparent substrate, a circuit layer, an insulating layer, an electrode layer, at least a conducting pillar and an alignment layer. The transparent substrate has a surface, and the circuit layer is atop the surface. The conducting pillar is arranged in the insulating layer and connected to the electrode layer and the circuit layer. The alignment layer contacts the liquid layer. The electrode layer is interposed between the alignment layer and the insulating layer. The electrode layer in at least one of the driving electrode plates includes at least two ring-shaped electrodes.

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Abstract: Embodiments of apparatus for physical vapor deposition are provided. In some embodiments, a target assembly for use in a substrate processing system to process a substrate includes a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a first side bonded to the target supporting surface, wherein a diameter of the target is greater than the first diameter of the target supporting surface.

Abstract: Compositions are provided comprising a continuous liquid aqueous medium having dispersed therein a polydioxythiophene and at least one colloid-forming fluorinated polymeric acid. Films from invention compositions are useful as buffer layers in organic electronic devices, including electroluminescent devices, such as, for example, organic light emitting diodes (OLED) displays.

Abstract: A connecting mechanism which is adjustable in respect of length and which retains its proper fastening function in various orientations connects a first body with a second body and includes a connecting piece, a bolt, and a nut. The connecting piece includes a circular bowl-shaped receiving groove which is open at a lower opening. The connecting flange is fastened to the first body via a threaded screw. The bolt has a spheroidal connecting head and a threaded connecting pole extending from the connecting head and protruding from the lower opening of the receiving groove to connect to and fasten the second body.

Abstract: According to embodiments provide a method for forming dielectric films using physical vapor deposition chamber. Particularly, a pasting process may be performed to apply a conductive coating over inner surfaces of the physical vapor deposition chamber. The pasting process may be performed under adjusted process parameters, such as increased spacing and/or increased chamber pressure. The adjusted parameters allow the conductive coating to be formed more efficiently and effectively.

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

Abstract: Devices are provided comprising conductive or semiconductive layers comprising compositions comprising aqueous dispersions of polythiophenes having homopolymers or co-polymers of Formula I(a) or Formula I(b) and at least one colloid-forming polymeric acid. Methods of making such compositions and using them in organic electronic devices are further provided.

Abstract: Compositions are provided comprising a continuous liquid aqueous medium having dispersed therein a polydioxythiophene and at least one colloid-forming fluorinated polymeric acid. Films from invention compositions are useful as buffer layers in organic electronic devices, including electroluminescent devices, such as, for example, organic light emitting diodes (OLED) displays.

Abstract: The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer.

Abstract: A “Name Disambiguator” provides various techniques for implementing an interactive framework for resolving or disambiguating entity names (associated with objects such as publications) for entity searches where two or more same or similar names may refer to different entities. More specifically, the Name Disambiguator uses a combination of user input and automatic models to address the disambiguation problem. In various embodiments, the Name Disambiguator uses a two part process, including: 1) a global SVM trained from large sets of documents or objects in a simulated interactive mode, and 2) further personalization of local SVM models (associated with individual names or groups of names such as, for example, a group of coauthors) derived from the global SVM model. The result of this process is that large sets of documents or objects are rapidly and accurately condensed or clustered into ordered sets by that are organized by entity names.

Abstract: A liquid crystal lens cell set includes a plurality of liquid crystal lenses overlapping to each other. Each of the liquid crystal lenses is supported between a pair of flat layers. One of the layers supports a planar electrode made of ITO. The other electrode, also formed of ITO, is supported in the center of the opposing substrate and projects toward the center of the liquid crystal layer. A power supply creates a potential difference between the electrodes and imposes a non-uniform electric field on the liquid crystal modules which aligns them in which a way as to act as a lens. By varying voltage between the electrodes the focal length of the lens may be controlled. A central electrode may be in the form of a beam or of a pointed tip. An electrode having a central hole may be associated with the central electrode or the planar electrode.

Abstract: A compressor may include a shell and a housing fixed within the shell. A compression mechanism may be supported by the housing and may include an orbiting scroll member and a non-orbiting scroll member that are meshingly engaged to form a series of compression pockets. A retaining assembly may include an axial retention member and a rotational retention member, each of which is engaged with the non-orbiting scroll member to limit axial translation and rotation of the non-orbiting scroll member relative to the housing.