Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Abstract: The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.

Abstract: Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula ROXNY, wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer, and having the formula R?OXNY, wherein the second layer has a second refractive index different from the first refractive index, and wherein R and R? are each one of a metal or a dielectric material. In some embodiments, a method of forming a light wave separation lattice includes depositing a first layer having a predetermined desired refractive index atop a substrate by a physical vapor deposition process; and depositing a second layer, different from the first layer, atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index.

Abstract: A crystal lens includes a liquid crystal layer, a pair of alignment layers, a first electrode set, and a second electrode set. The alignment layers are positioned on different sides of the liquid crystal layer. The first and second electrode sets are positioned on different alignment layers. The first electrode set includes a first transparent insulating layer and a first electrode layer. The first electrode set attaches to one of the alignment layers. The second electrode set includes a second transparent insulating layer, a second electrode layer, and a dielectric film. The second electrode layer includes a hole-patterned electrode. The dielectric film attaches to the first transparent insulating layer. The hole-patterned electrode exposes the dielectric film. In addition, an external power supply provides a driving voltage to the hole-patterned electrode and the first electrode layer, so that the liquid crystal molecules inside the liquid crystal layer drive rotation.

Abstract: Disclosed are an amine-oxide-group-containing conjugated polymer photoelectric material and application thereof. The amine-oxide-group-containing conjugated polymer photoelectric material consists of conjugated main chains and a side chain containing an amine oxide unit, and is applied in an organic photoelectric device. The material has desirable alcohol/water solubility and photoelectric properties, is suitable for making a multi-layer solution for machining a device, and meanwhile can prevent an adverse effect incurred by freely moving counter ions in a common polyelectrolyte to the device. The material may be used as a cathode interface modification layer applied in organic photoelectric devices such as light-emitting and photovoltaic devices, so as to improve performance of the devices.

Abstract: Firmware updates at an information handling system flash memory device, such as provisioning information stored on a USB device, are securely performed by using a buffer memory and a secured code. An application running on a CPU generates a firmware update and a security code, such as a ciphered hash code based on the firmware update, stores the firmware update and security code in a buffer, and informs a management processor of the update. The management processor analyzes the firmware update to authorize copying of the update from the buffer to the flash memory device. For instance, the management processor creates the security code from the firmware update and compares the created code with the security code stored in the buffer to validate the firmware update.

Abstract: An optical zoom structure includes an amplifying set, a focusing set, and an image display region. The amplifying set resembles the diverging optical effect and includes a first fixed focal set and a first liquid crystal lens. The focusing set resembles a converging optical effect and includes a second fixed focal set and a second liquid crystal lens. The first liquid crystal lens and the second fixed focal set are disposed between the first fixed focal set and the second liquid crystal lens. The first distance is from the first fixed focal set to the first liquid crystal lens. The second distance is from the first liquid crystal lens to the second fixed focal set. The third distance is from the second fixed focal set to the second liquid crystal lens. The fourth distance is from the second first liquid crystal lens to the image display region.

Abstract: Methods for forming a passivation protection structure on a metal line layer formed in an insulating material in an interconnection structure are provided. In one embodiment, a method for forming passivation protection on a metal line in an interconnection structure for semiconductor devices includes selectively forming a metal capping layer on a metal line bounded by a dielectric bulk insulating layer in an interconnection structure formed on a substrate in a processing chamber incorporated in a multi-chamber processing system, in-situ forming a barrier layer on the substrate in the processing chamber; wherein the barrier layer is a metal dielectric layer, and forming a dielectric capping layer on the barrier layer in the multi-chamber processing system.

Abstract: An interconnect structure for use in semiconductor devices and a method for fabricating the same is described. The method includes positioning a substrate in a vacuum processing chamber. The substrate has an exposed copper surface and an exposed low-k dielectric surface. A metal layer is formed over the copper surface but not over the low-k dielectric surface. A metal-based dielectric layer is formed over the metal layer and the low-k dielectric layer.

Abstract: Described is a technology for understanding entities of a webpage, e.g., to label the entities on the webpage. An iterative and bidirectional framework processes a webpage, including a text understanding component (e.g., extended Semi-CRF model) that provides text segmentation features to a structure understanding component (e.g., extended HCRF model). The structure understanding component uses the text segmentation features and visual layout features of the webpage to identify a structure (e.g., labeled block). The text understanding component in turn uses the labeled block to further understand the text. The process continues iteratively until a similarity criterion is met, at which time the entities may be labeled. Also described is the use of multiple mentions of a set of text in the webpage to help in labeling an entity.

Abstract: Firmware updates at an information handling system flash memory device, such as provisioning information stored on a USB device, are securely performed by using a buffer memory and a secured code. An application running on a CPU generates a firmware update and a security code, such as a ciphered hash code based on the firmware update, stores the firmware update and security code in a buffer, and informs a management processor of the update. The management processor analyzes the firmware update to authorize copying of the update from the buffer to the flash memory device. For instance, the management processor creates the security code from the firmware update and compares the created code with the security code stored in the buffer to validate the firmware update.

Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.

Abstract: Methods for forming a metal dielectric etching stop layer onto a substrate with good etching selectivity and low wet etching rate. In one embodiment, a method of sputter depositing a metal dielectric etching stop layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least N2 gas into the processing chamber, applying a RF power to form a plasma from the gas mixture to sputter source material from a target disposed in the processing chamber, maintaining a substrate temperature less than about 320 degrees Celsius, and depositing a metal dielectric etching stop layer onto the substrate from the sputtered source material.

Abstract: Captured data can be transformed and augmented for a particular presentation in a document, such as a note of a notebook application, based on an identified entity for the captured data. The particular presentation of captured data can be provided based on entity detection, extraction, and knowledge base resolution and retrieval. Methods, systems, and services are provided that identify a primary entity of an item input to a notebook application and create an entity object for the primary entity of the item at least from one or more structured representations for content associated with the item. A template for presenting the entity object can be determined according to the primary entity, where the template is selected from a set of templates corresponding to different primary entities such that an arrangement and presentation for one primary entity is different than that of another primary entity.

Abstract: Disclosed are an amine-oxide-group-containing conjugated polymer photoelectric material and application thereof. The amine-oxide-group-containing conjugated polymer photoelectric material consists of conjugated main chains and a side chain containing an amine oxide unit, and is applied in an organic photoelectric device. The material has desirable alcohol/water solubility and photoelectric properties, is suitable for making a multi-layer solution for machining a device, and meanwhile can prevent an adverse effect incurred by freely moving counter ions in a common polyelectrolyte to the device. The material may be used as a cathode interface modification layer applied in organic photoelectric devices such as light-emitting and photovoltaic devices, so as to improve performance of the devices.

Abstract: A liquid crystal lens includes a liquid crystal layer and at least two driving electrode plates. The liquid crystal layer is arranged between the driving electrode plates. Each of the driving electrode plates includes a transparent substrate, a circuit layer, an insulating layer, an electrode layer, at least a conducting pillar and an alignment layer. The transparent substrate has a surface, and the circuit layer is atop the surface. The conducting pillar is arranged in the insulating layer and connected to the electrode layer and the circuit layer. The alignment layer contacts the liquid layer. The electrode layer is interposed between the alignment layer and the insulating layer. The electrode layer in at least one of the driving electrode plates includes at least two ring-shaped electrodes.

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Abstract: Embodiments of apparatus for physical vapor deposition are provided. In some embodiments, a target assembly for use in a substrate processing system to process a substrate includes a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a first side bonded to the target supporting surface, wherein a diameter of the target is greater than the first diameter of the target supporting surface.

Abstract: Compositions are provided comprising a continuous liquid aqueous medium having dispersed therein a polydioxythiophene and at least one colloid-forming fluorinated polymeric acid. Films from invention compositions are useful as buffer layers in organic electronic devices, including electroluminescent devices, such as, for example, organic light emitting diodes (OLED) displays.