Abstract: An optical cross-connect switch for routing light signals between N input optical fibers and M output optical fibers. The switch includes an NxM array of optical switching elements, each optical switching element routing a light signal from one of the input optical fibers to one of the output optical fibers. Each optical switching element includes a layer of a switching material, first and second transparent electrodes overlying the layer of switching material, and a layer of hydrogen reservoir material adjacent to the layer of switching material. The switching material has first and second states. The switching material is transparent to the light signals in the first state, and the switching material reflects the light signals in the second state. The state of the switching material is determined by the concentration of hydrogen in the material.

Abstract: A method for forming a platen useful for forming nanoscale wires for device applications comprises: (a) providing a substrate having a major surface; (b) forming a plurality of alternating layers of two dissimilar materials on the substrate to form a stack having a major surface parallel to that of the substrate; (c) cleaving the stack normal to its major surface to expose the plurality of alternating layers; and (d) etching the exposed plurality of alternating layers to a chosen depth using an etchant that etches one material at a different rate than the other material to thereby provide the surface with extensive strips of indentations and form the platen useful for molding masters for nano-imprinting technology. The pattern of the platen is then imprinted into a substrate comprising a softer material to form a negative of the pattern, which is then used in further processing to form nanowires.

Abstract: Di-N-substituted piperazine or 1,4 di-substituted piperadine compounds in accordance with formula I (including all isomers, salts, esters, and solvates) wherein R, R1, R2, R3, R4, R21, R27, R28, X, Y, and Z are as defined herein are muscarinic antagonists useful for treating cognitive disorders such as Alheimer's disease. Pharmaceutical compositions and methods of preparation are also disclosed. Also disclosed are synergistic combinations of compounds of the above formula or other compounds capable of enhancing acetylcholine release with acetylcholinesterase inhibitors.

Abstract: An optical element having a variable index of refraction. The optical element utilizes a layer of a transparent dielectric material having an index of refraction determined by the concentration of hydrogen in the dielectric material. A layer of a hydrogen reservoir medium that includes a material that acts as a source or a sink for hydrogen is placed adjacent to the transparent dielectric layer. The reservoir medium accepts hydrogen from the transparent layer in response to a first electric field being applied across the transparent layer and reservoir layer and donates hydrogen to the transparent layer in response to a second electric field being applied across the transparent layer and the reservoir layer. The electric fields are generated by applying appropriate potentials across first and second electrodes that sandwich the dielectric and reservoir layers. The preferred reservoir material is KOH.

Abstract: A method for growing a crystalline layer that includes a first material on a growth surface of a crystalline substrate of a second material, wherein the first material and the second material have different lattice constants. A buried layer is generated in the substrate such that the buried layer isolates a layer of the substrate that includes the growth surface from the remainder of the substrate. The second material is then deposited on the growth surface at a growth temperature. The isolated layer of the substrate has a thickness that is less than the thickness at which defects are caused in the crystalline lattice of the first material by the second material crystallizing thereon. The buried layer is sufficiently malleable at the growth temperature to allow the deformation of the lattice of the isolated layer without deforming the remainder of the substrate. The present invention may be utilized for growing III-V semiconducting material layers on silicon substrates.

Abstract: A laser having a first layer of a III-V semiconducting material of a first semiconductor type on which a mask having an opening therein is deposited. A second layer of a III-V semiconducting material of the first semiconductor type is grown from the portion of the first layer underlying the opening in the mask and extends over the mask. A first cladding layer of a III-V semiconducting material of the first semiconductor type is grown over the second layer so as to cover the second layer. The active layer that generates light upon the recombination of holes and electrons therein is grown over the first cladding layer. A second cladding layer of a III-V semiconducting material is grown over the active layer, the second cladding layer including a III-V semiconducting material of the opposite semiconductor type from the first layer. A third layer of a III-V semiconducting material is grown over the second cladding layer.

Abstract: A method for growing a crystalline layer that includes a first material on a growth surface of a crystalline substrate of a second material, wherein the first material and the second material have different lattice constants. A buried layer is generated in the substrate such that the buried layer isolates a layer of the substrate that includes the growth surface from the remainder of the substrate. The first material is then deposited on the growth surface at a growth temperature. The isolated layer of the substrate has a thickness that is less than the thickness at which defects are caused in the crystalline lattice of the second material by the first material crystallizing thereon. The buried layer is sufficiently malleable at the growth temperature to allow the deformation of the lattice of the isolated layer without deforming the remainder of the substrate. The present invention may be utilized for growing III-V semiconducting material layers on silicon substrates.

Abstract: A method for detaching an epitaxial layer from one substrate and transferring it to another substrate allows an epitaxially grown material layer to be easily detached from a first substrate that has good epitaxial growth properties and transferred to another substrate having better cleaving, electrical or other properties than the first substrate. A mask is applied to a portion of a surface of the first epitaxial layer and a second epitaxial layer is grown over the first epitaxial layer and the mask. A trench is formed in the second epitaxial layer to expose the mask and a second substrate is bonded to the second epitaxial layer. An etchant is introduced through the trench and etches away the mask, thus releasing the second epitaxial layer from the first substrate and the first epitaxial layer. Thus, the second epitaxial layer has been released from the first substrate and transferred to the second substrate without performing operations that would impair the optical properties of the epitaxial material.

Abstract: An improved method for growing a first layer on a second layer in which the first and second layers have different thermal indices of expansion and/or a mismatch of the lattice constants and the deposition being carried out at a temperature above ambient. The first layer includes a material that decomposes upon beating above a decomposition temperature. One of the first and second layers absorbs light in a first frequency range and the other of the first and second layers is transparent to the light in the first frequency range. In the method of the present invention, the one of the first and second layers that absorbs light in the first frequency range is exposed to light in the first frequency range by passing the light through the other of the first and second layers. This exposure heats the first layer to a temperature above the decomposition temperature at the interface of the first and second layers after the first layer has been deposited on the second layer.

Abstract: An electrical contact that comprises a layer of a p-type gallium nitride material, a metal layer, and an intermediate layer of a material different from the gallium nitride material and the metal layer. The intermediate layer is sandwiched between the layer of p-type gallium nitride material and the metal layer. The material of the intermediate layer may be a Group III-V semiconductor that has high band-gap energy, lower than that of the p-type gallium nitride material. The intermediate layer may alternatively include layers of different Group III-V semiconductors. The layers of the different Group III-V semiconductors are arranged in order of their band-gap energies, with the Group III-V semiconductor having the highest band-gap energy next to the layer of the p-type gallium nitride material, and the Group III-V semiconductor having the lowest band-gap energy next to the metal layer. As a further alternative, the material of the intermediate layer may be a metal nitride.

Abstract: A position detector is provided for use on a spin-drying machine employed in integrated circuit (IC) fabrication to detect whether the spin-drying machine has shifted in position during operation. If the spin-drying machine is positioned incorrectly, the position detector is capable of stopping the operation of robot arms used to grab and position wafers on the spin-drying machine so that the robot arms will not be damaged or crash into the wafers on the spin-drying machine due to the incorrect positioning of the spin-drying machine. The position detector is designed for use on a spin-drying machine having a spinning unit, a fixed platform surrounding the spinning unit, and at least one robot arm mounted on the fixed unit. The position detector comprises a pair of emitters mounted on the spinning unit and a pair of oppositely arranged receivers on the fixed platform.

Abstract: A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocation defect density where it is grown over the buried reflector making it suitable for high quality optical light emitting devices, and the embedded reflector eliminates the need for developing an additional reflector.

Abstract: Di-N-substituted piperazine or 1,4 di-substituted piperadine compounds in accordance with formula I (including all isomers, salts, esters, and solvates) ##STR1## wherein R, R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.21, R.sup.27, R.sup.28, X, Y, and Z are as defined herein are muscarinic antagonists useful for treating cognitive disorders such as Alzheimer's disease. Pharmaceutical compositions and methods of preparation are also disclosed. Also disclosed are synergistic combinations of compounds of the above formula with acetylcholinesterase inhibitors.

Abstract: A hybrid method is described that allows for the combination of both source-compiled and source-interpreted code in the execution of computer programs. While traditional practice has dictated otherwise, code does not need to be either solely interpreted or solely compiled.

Abstract: Di-N-substituted piperazine or 1,4 di-substituted piperadine compounds in accordance with formula I (including all isomers, salts, esters, and solvates) ##STR1## wherein R, R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.21, R.sup.27, R.sup.28, X, Y, and Z are as defined herein are muscarinic antagonists useful for treating cognitive disorders such as Alzheimer's disease. Pharmaceutical compositions and methods of preparation are also disclosed. Also disclosed are synergistic combinations of compounds of the above formula or other compounds capable of enhancing acetylcholine release with acetylcholinesterase inhibitors.

Abstract: A method for providing an epitaxial layer of a first material over a substrate comprising a second material having a lattice constant different from that of the first material. In the method of the present invention, a first layer of the first material is grown on the substrate. A portion of the first layer is treated to render that portion amorphous. The amorphous portion is then annealed at a temperature above the recrystallization point of the amorphous portion, but below the melting point of the crystallized portion of the first layer thereby recrystallizing the amorphous portion of the first layer. The first layer may rendered amorphous by ion implantation. The method may be used to generate GaN layers on sapphire having fewer dislocations than GaN layers generated by conventional deposition techniques.

Abstract: Di-N-substituted piperazine or 1,4 di-substituted piperadine compounds in accordance with formula I (including all isomers, salts, esters, and solvates) ##STR1## wherein R, R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.21, R.sup.27, R.sup.28, X, Y, and Z are as defined herein are muscarinic antagonists useful for treating cognitive disorders such as Alzheimer's disease. Pharmaceutical compositions and methods of preparation are also disclosed. Also disclosed are synergistic combinations of compounds of the above formula with acetylcholinesterase inhibitors.

Abstract: Di-N-substituted piperazine or 1,4 di-substituted piperadine compounds of formula I ##STR1## wherein one of Y and Z is N and the other is N, CH, or C-alkyl;X is --O--, --SO.sub.0-2 --, amino, substituted amino, --CO--, --CH.sub.2 --, mono or di-substituted methylene, --CS--, --CONR.sup.20 --, --NR.sup.20 --SO.sub.2 --, --NR.sup.20 CO--, --SO.sub.2 NR.sup.20 --, --CH.dbd.CH--, --C.tbd.C-- or --NHC(O)NH--;R is optionally substituted phenyl, aryl or cycloalkyl, or other substituents as defined in the specification;R.sup.1 and R.sup.21 are H, CN or optionally substituted alkyl, or other substituents as defined in the specification;R.sup.2 is optionally substituted cycloalkyl or piperidyl, or other substituents as defined in the specification; andR.sup.3, R.sup.4, R.sup.5, R.sup.20, R.sup.27 and R.sup.