Abstract: In solid freeform fabrication processes that make use of a removable support material, pre-calculation of the amount of support material needed for a build is difficult (inaccurate or slow) because the digital data for generating the support material is often not generated until the build is in progress. A method is proposed that has been shown to generate rapid and accurate estimates of the amount of both build and support material needed before a build begins, to accurately predict before a build begins when replenishment materials are needed, and to track material consumptions over time.

Abstract: Configurable electronic circuits comprise arrays of cross-points of one layer of metal/semiconductive nanoscale lines crossed by a second layer of metal/semiconductive nanoscale lines, with a configurable layer between the lines. Methods are provided for altering the thickness and/or resistance of the configurable layer by oxidation or reduction methods, employing a solid material as the configurable layer. Specifically a method is provided for configuring nanoscale devices in a crossbar array of configurable devices comprising arrays of cross-points of a first layer of nanoscale lines comprising a first metal or a first semiconductor material crossed by a second layer of nanoscale lines comprising a second metal or a second semiconductor material.

Abstract: A method for forming first and second linear structures of a first composition that meet at right angles, there being a gap at the point at which the structures meet. The linear structures are constructed on an etchable crystalline layer having the first composition. First and second self-aligned nanowires of a second composition are grown on this layer and used as masks for etching the layer. The self-aligned nanowires are constructed from a material that has an asymmetric lattice mismatch with respect to the crystalline layer. The gap is sufficiently small to allow one of the structures to act as the gate of a transistor and the other to form the source and drain of the transistor. The gap can be filled with electrically switchable materials thereby converting the transistor to a memory cell.

Abstract: Various nanoscale logic gates are disclosed. An alternating current (“AC”) source is superimposed on a direct-current (“DC”), largely resistor-based nanoscale logic circuit in order to provide distinguishable, AC current or voltage logical output signals despite potentially narrow DC-voltage or DC-current ranges produced by the resistor-based nanoscale logic circuit. AC-enhanced AND, OR, NAND, and NOR nanoscale logic gates are provided as four specific embodiments of the present invention.

Abstract: An animated flute includes an animated air bag at one end of a pipe. The air bag has an air passage connected to the pipe and an air outlet. When air is blown into the air bag through the air passage, the air bag is inflated and the animated figure can be seen clearly.

Abstract: An optical sensor is provided, comprising (a) a silicon nanowire of finite length having an electrical contact pad at each end thereof; and (b) a plurality of self-assembled molecules on a surface of the silicon nanowire, the molecules serving to modulate electrical conductivity of the silicon nanowire by either a reversible change in dipole moment of the molecules or by a reversible molecule-assisted electron/energy transfer from the molecules onto the silicon nanowire. Further, a method of making the optical sensor is provided. The concept of molecular self-assembly is applied in attaching functional molecules onto silicon nanowire surfaces, and the requirement of molecule modification (hydroxy group in molecules) is minimal from the point view of synthetic difficulty and compatibility. Self-assembly will produce well-ordered ultra-thin films with strong chemical bonding on a surface that cannot be easily achieved by other conventional methods.

Abstract: A method and mold for creating nanoscale patterns in an ion-selective polymer membrane is provided, in which a mold comprising a substrate and a molding layer having at least one protruding feature is imprinted on the ion-selective polymer membrane, thereby creating a recessed feature in the membrane. Protruding features having nanoscale dimensions can be created, e.g., by using self-assembled nanostructures as a shadow mask for etching a molding layer. In one embodiment, an imprinted ion selective polymer membrane, suitable for use as a solid electrolyte, is adapted for use in an electrochemical device or fuel cell by adding a metal catalyst to one portion of the membrane to serve as a catalytic electrode.

Abstract: A low defect gallium nitride based semiconductor, and method for its production, is disclosed. A first gallium nitride based semiconductor layer overlying a substrate of a dissimilar material is grown. A trench is formed in the first gallium nitride based semiconductor layer. A material is deposited on a surface of the first gallium nitride based semiconductor layer to prevent a second gallium nitride based semiconductor layer, of a material different from the first gallium nitride based semiconductor layer, from nucleating thereon. The bottom surface of the trench is of a material such that the second gallium nitride based semiconductor layer will not nucleate thereon. The second gallium nitride based semiconductor material is grown, extending from at least one of the side walls of the trench, the second gallium nitride based semiconductor material having fewer defects than the first gallium nitride based semiconductor layer.

Abstract: A process of fabricating a molecular electronic device that preserves the integrity of the active molecular layer of the electronic device during processing is described. In one aspect, a passivation layer is provided to protect a molecular layer from degradation during patterning of the top wire layer. A molecular electronic device structure and a memory system that are formed from this fabrication process are described.

Abstract: An optical sensor is provided, comprising (a) a silicon nanowire of finite length having an electrical contact pad at each end thereof; and (b) a plurality of self-assembled molecules on a surface of the silicon nanowire, the molecules serving to modulate electrical conductivity of the silicon nanowire by either a reversible change in dipole moment of the molecules or by a reversible molecule-assisted electron/energy transfer from the molecules onto the silicon nanowire. Further, a method of making the optical sensor is provided. The concept of molecular self-assembly is applied in attaching functional molecules onto silicon nanowire surfaces, and the requirement of molecule modification (hydroxy group in molecules) is minimal from the point view of synthetic difficulty and compatibility. Self-assembly will produce well-ordered ultra-thin films with strong chemical bonding on a surface that cannot be easily achieved by other conventional methods.

Abstract: A uniform pressing apparatus used in nanoimprint lithographic process is proposed, including a housing having a first flange; a first carrier unit for carrying an imprint mold and having at least one second flange freely attaches to the first flange; a second carrier unit for carrying a substrate; at least one uniform pressing unit mounted on a imprint force transmission path; and a power source driving at least one of the housing and the second carrier unit to allow a contact to be formed between the mold and the moldable layer. Therefore, the nanoimprint lithographic process is achieved with good parallelism between the substrate and the mold and with uniform pressure distribution.

Abstract: A parallelism adjustment device applicable to nano-imprint lithography has an imprint unit, a carrier unit, a parallelism adjustment mechanism, and a driving source. The imprint unit has a first molding plate and an imprinting mold mounted on the first molding plate. The carrier unit has a second molding plate and a substrate mounted on the second molding plate. The parallelism adjustment mechanism has an enclosed resilient film and a fluid filled therein, and is coupled to at least one of the first and second molding plates. The driving source drives at least one of the imprint unit and the carrier unit to form contact between the mold and the moldable layer. The parallelism adjustment device is pressed via the contact to adjust parallelism for the imprint mold and the substrate and uniformly distributes the pressure between the mold and the substrate, making the molding quality of nano-imprint lithography significantly improved.

Abstract: A method is provided for printing electronic and opto-electronic circuits. The method comprises: (a) providing a substrate; (b) providing a film-forming precursor species; (c) forming a substantially uniform and continuous film of the film-forming precursor species on at least one side of the substrate, the film having a first electrical conductivity; and (d) altering portions of the film with at least one conductivity-altering species to form regions having a second electrical conductivity that is different than the first electrical conductivity, the regions thereby providing circuit elements. The method employs very simple and continuous processes, which make the time to produce a batch of circuits very short and leads to very inexpensive products, such as electronic memories (write once or rewriteable), electronically addressable displays, and generally any circuit for which organic electronics or opto-electronics are acceptable.

Abstract: An electric field activated molecular system, preferably bi-stable, configured within an electric field generated by a pair of electrodes is provided for use, e.g., as electronic ink or other visual displays. The molecular system has an electric field induced band gap change that occurs via a change (reversible or irreversible) of the extent of the electron conjugation via chemical bonding change to change the band gap, wherein in a first state, there is substantial conjugation throughout the molecular system, resulting in a relatively smaller band gap, and wherein in a second state, the substantial conjugation is destroyed, resulting in a relatively larger band gap. The changing of substantial conjugation may be accomplished in one of the following ways: (1) charge separation or recombination accompanied by increasing or decreasing electron localization in the molecule; or (2) change of substantial conjugation via charge separation or recombination and&pgr;-bond breaking or making.

Abstract: A gated nanoscale switch operates as a resonant tunneling device. A conductive channel is formed of a pair of conductive molecular wires and a conductive nanoparticle. Each molecular wire is bound, at one end, to the conductive nanoparticle and, at the opposed end, to one of a pair of electrodes. The structure is located upon a dielectric layer that overlies a conductive substrate. The device may be arranged to operate as a switch with the conductive substrate acting as a gate electrode. Alternatively, the device may be employed to measure the electrical (current versus voltage) characteristics of the molecular wires.

Abstract: Self-organized, or self-assembled, nanowires of a first composition may be used as an etching mask for fabrication of nanowires of a second composition. The method for forming such nanowires comprises: (a) providing an etchable layer of the second composition and having a buried insulating layer beneath a major surface thereof; (b) growing self-assembled nanowires on the surface of the etchable layer; and (c) etching the etchable layer anisotropically down to the insulating layer, using the self-assembled nanowires as a mask. The self-assembled nanowires may be removed or left. In either event, nanowires of the second composition are formed. The method enables the formation of one-dimensional crystalline nanowires with widths and heights at the nanometer scale, and lengths at the micrometer scale, which are aligned along certain crystallographic directions with high crystal quality.

Abstract: The method of manufacturing a handle grip of a tool comprises the steps of: 1. to position a mandrel of a manufacturing machine and to inject plastic material to form an inner layer; 2. to release the positioning to leave positioning holes on the shaped inner layer, the inner layer then is processed by second time injection to completely envelop the inner layer with plastic and shape a middle layer; and 3. the middle layer being processed by third time injection to partially envelop the middle layer with plastic to thereby form an external layer with the middle layer partially exposed, and the handle grip of the tool with two colors in firm combining state being completed. On the handle grip made by these steps, the holes formed after taking off the mandrel of the manufacturing machine are holes for combining the stem of the tool; hence the holes made are not subjected to twisting and deformation, and is convenient for combining with the stem.

Abstract: An optical sensor is provided, comprising (a) a silicon nanowire of finite length having an electrical contact pad at each end thereof; and (b) a plurality of self-assembled molecules on a surface of the silicon nanowire, the molecules serving to modulate electrical conductivity of the silicon nanowire by either a reversible change in dipole moment of the molecules or by a reversible molecule-assisted electron/energy transfer from the molecules onto the silicon nanowire. Further, a method of making the optical sensor is provided. The concept of molecular self-assembly is applied in attaching functional molecules onto silicon nanowire surfaces, and the requirement of molecule modification (hydroxy group in molecules) is minimal from the point view of synthetic difficulty and compatibility. Self-assembly will produce well-ordered ultra-thin films with strong chemical bonding on a surface that cannot be easily achieved by other conventional methods.

Abstract: A method of forming features on substrates by imprinting is provided. The method comprises: (a) forming a polymer solution comprising at least one polymer dissolved in at least one polymerizable monomer; and (b) depositing the polymer solution on a substrate to form a liquid film thereon; and then either: (c) curing the liquid film by causing the monomer(s) to polymerize and optionally cross-linking the polymer(s) to thereby form a polymer film, the polymer film having a glass transition temperature (Tg); and imprinting the polymer film with a mold having a desired pattern to form a corresponding negative pattern in the polymer film, or (d) imprinting the liquid film with the mold and curing it to form the polymer film. The temperature of imprinting is as little as 10° C. above the Tg, or even less if the film is in the liquid state. The pressure of the imprinting can be within the range of 100 to 500 psi.

Abstract: A method for forming first and second linear structures of a first composition that meet at right angles, there being a gap at the point at which the structures meet. The linear structures are constructed on an etchable crystalline layer having the first composition. First and second self-aligned nanowires of a second composition are grown on this layer and used as masks for etching the layer. The self-aligned nanowires are constructed from a material that has an asymmetric lattice mismatch with respect to the crystalline layer. The gap is sufficiently small to allow one of the structures to act as the gate of a transistor and the other to form the source and drain of the transistor. The gap can be filled with electrically switchable materials thereby converting the transistor to a memory cell.